DIODE SS16 Search Results

SR506 Diode

Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
Contextual Info: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41

RB160-40

Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Contextual Info: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148

2510W

Abstract: RS1M diode
Contextual Info: Email: info@kingtronics.com Web: www.kingtronics.com Tel: +86 769 81188110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Bridge Rectifier List UL ISO Manufacturer since 1990 Diode Recitifer M7 DO-214AC (1A 1000V)SMA Bridge Rectifier ABS2-ABS6; ABS8; ABS10

diode MARKING CODE SS16

Abstract: 403D SS16 Diode SS16T3
Contextual Info: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

SS16 Diode

Abstract: SS16 DIODE schottky marking code ss16 SS16 MARKING
Contextual Info: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

SS16 DIODE

Abstract: 403D SS16
Contextual Info: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

403D

Abstract: SS16 SS16T3
Contextual Info: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

SS16 DIODE schottky

Abstract: SS16 Diode 1ss16 SMA CASE 403D-02 403D SS16 diode MARKING CODE SS16
Contextual Info: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

"Power Diode"

Abstract: marking code ss16 SS16 DIODE schottky 403D SS16 SS16T3 SS16T3G
Contextual Info: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

SS16T3G

Abstract: SBRA8160
Contextual Info: SS16T3G, SBRA8160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: SS16T3G, SBRA8160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

DI108S

Abstract: SK5100 CP2506 sb5200 SB840
Contextual Info: Diode & Rectifiers Diode & Rectifiers MERITEK RoHS TABLE OF CONTENT • PLASTIC PASSIVATED JUNCTION RECTIFIER o General Purpose

Quality Technologies optocouplers

Abstract: B613 IC 1296 QT OPTOELECTRONICS MOC8030 MOC8050 PONT DIODE 0884 qt
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS Preliminary NO BASE CONNECTION MOC8030 MOC8050 DESCRIPTION PACKAGE DIMENSIONS The MOC8030 and MOC8050 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Contextual Info: SURFACE MOUNT: Super Fast Recovery Schottky & Bridge Rectifiers SUPER FAST RECOVERY DIODE Part CrossMax.Average Peak Peak Fwd Surge Max Forward Max. Reverse Max Reverse Package Number Reference Rect. Current Inverse Current @ 8.3ms Voltage @ Ta 25 C Current @ 25 C Recovery Time

br 123 s

Abstract: BAS54A BR3005 MS15N50 sod-23 BAS54C
Contextual Info: Bruckewell Technology Corp., Ltd. Your Best Partner Discrete Semiconductor Product Catalogue 2015 version Diode/ Rectifier MOSFET TVS/ ESD Protector Comp pany Profile P e Bru uckewell teechnology corp. c registe ered in Dela aware, USA A and total capital

SS14 DIODE schottky

Abstract: diode SS12 sma SS14T3 diode ss12 SS14 DIODE SS14 DIODE schottky G SS18-T3 S100 SS13 SS15
Contextual Info: SS12 – S100 WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Power Loss, High Efficiency Surge Overload Rating to 30A Peak For Use in Low Voltage Application

AN2051

Abstract: EEEHA2A220P LM5050-2 SS16T3G LM5050-2EVAL 600w schematic diagram switching power supply power supply schematic 60v AN-2051
Contextual Info: LM5050-2EVAL Evaluation Board LM5050-2EVAL Evaluation Board National Semiconductor Application Note 2051 Donald P. Jones November 1, 2010 Introduction The LM5050-2 evaluation board is designed to demonstrate the capabilities of the LM5050-2 OR-ing Diode Controller. It

LL5817

Abstract: smd ss12 DIODE SS34 LL5818 LL5819 SS13 SS14 SS15 SS16 SS19
Contextual Info: SURFACE MOUNT: Super Fast Recovery Schottky & Bridge Rectifiers SUPER FAST RECOVERY DIODE Part CrossMax.Average Peak Peak Fwd Surge Max Forward Max. Reverse Max Reverse Package Number Reference Rect. Current Inverse Current @ 8.3ms Voltage @ Ta 25 C Current @ 25 C Recovery Time

DIODE SOT-23 PACKAGE

Abstract: dbs107 mmbd2836 Bridge rectifier DF08 s1g 28 diode BAS21 DL4148 LL4148 LL4448 MMBD1402
Contextual Info: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package

ss12

Contextual Info: SS12 – S100 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 30A Peak

Contextual Info: SS12 – S100 WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features  Schottky Barrier Chip       Ideally Suited for Automatic Assembly B Low Power Loss, High Efficiency Surge Overload Rating to 30A Peak For Use in Low Voltage Application

Contextual Info: User's Guide SNVA483B – October 2011 – Revised May 2013 AN-2148 LM5051MAEVAL Evaluation Board 1 Introduction The LM5051 evaluation board is designed to demonstrate the capabilities of the LM5051 OR-ing diode controller. One low-side N-channel power MOSFET is used per channel. The LM5051 evaluation board