DIODE SS 3 Search Results

Thyristor ys

Contextual Info: SKN 140F THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Fast Recovery Rectifier Diode SKN 140F SKR 140F OB$; OBB; O <=SS <USS <YSS O <=SS <USS <YSS CPB;$ Q =RS G L%&T4%9% ,&'9 0+ *+81489+95 +F)(&14+8N CPGO Q <US G L548H <VSA <SSS 3WA :* Q <SS XIN $>? <USP<= $>B <USP<=

Contextual Info: SKN 141F THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Fast Recovery Rectifier Diode SKN 141F SKR 141F OB$; OBB; O <=SS <USS <YSS O <=SS <USS <YSS CPB;$ Q =RS G L%&T4%9% ,&'9 0+ *+81489+95 +F)(&14+8N CPGO Q <US G L548H <VSA <SSS 3WA :* Q <SS XIN $>? <U<P<= $>B <U<P<=

Contextual Info: SKN 136F THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode OB$; OBB; O WSS <SSS O WSS <SSS CPB;$ Q =RS G L%&T4%9% ,&'9 0+ *+81489+95 +F)(&14+8N CPGO Q <UV G L548H <WSA <SSS 3XA :* Q <SS YIN $>? <URPSW $>B <URPSW $>? <URP<S $>B <URP<S <=SS <=SS $>? <URP<= Symbol Conditions

Contextual Info: SKN 135F THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode OB$; OBB; O WSS <SSS O WSS <SSS CPB;$ Q =RS G L%&T4%9% ,&'9 0+ *+81489+95 +F)(&14+8N CPGO Q <UV G L548H <WSA <SSS 3XA :* Q <SS YIN $>? <UVPSW $>B <UVPSW $>? <UVP<S $>B <UVP<S <=SS <=SS $>? <UVP<= Symbol Conditions

diode Z47

Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
Contextual Info: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352

Contextual Info: SKKT 27, SKKT 27B, SKKH 27 THYRISTOR SEMIPACK 1 Thyristor / Diode Modules NOMP NOOP= NDOP QJOPM R BS I G1&321.1 K&0.% +- 5- '2).-.* -7%(&'2-)H N YSS UASS UBSS UTSS N VSS UCSS U]SS U@SS QJIN R CT I G*2)> UVSW J5 R VC XEH MZZJ CT[SV? MZZJ CT¥SV? MZZ$ CT[SV?

5s70

Abstract: 1N3604 F100 tl1507
Contextual Info: 1 IM 3604 Silicon planar diode The silicon planar diode 1 N 3 6 0 4 in the gla ss package 51 A 2 D IN 41 8 8 0 D O -7 is designed for use as high-speed sw itching diode as well as for general sw itching applications. The planar technique results in short reverse recovery time, small

saia

Abstract: ESJA98 ESJA98-06 ESJA98-08
Contextual Info: E S J 9 A 8 6 k v , 8 k v t K ± ' i Kw i 3? ' f k •W B'+sS : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJA98I*, fcl ESJA98 is high reliability resin molded type high seepd hig voltage diode in small size package which is sealed multilayed mesa type silicon chip by epoxy resin.

Contextual Info: PD- 91789 International IO R Rectifier PRELIMINARY IR F 7 3 2 4 D 1 FETKY MOSFET / Schottky Diode Co-packaged H EXFET Power M O SFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO -8 Footprint V d ss = -2 0 V R ü S o n = o . 1 8 £ 2

DIODE T50

Abstract: MMBD7000 mmbd1201 MA670
Contextual Info: MMBD7000 & Discrete POW ER & Signal Technologies National Semiconductor’ MMBD7000 High Conductance Ultra Fast Diode Sourced from P roce ss 1P. Se e MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol ta^scum essotnemisenoted Parameter Units

h965

Abstract: in962 zener diode CH965 h985 in746 CH748 CH746 H983 CH749 CH747
Contextual Info: Electrical characteristics at 2 5 ° C u nle ss oth erw ise specified. VOLTAGE REGULATOR PLANAR DIODE CHIPS MICROSEMI TYPE NO. Note 1 & 5 CH4370 CH4371 CH4372 NOMINAL ZENER VOLTAGE Vz @ IZT (Note 2) VOLTS 2.4 2.7 3.0 ZENER MAXIMUM ZENER TEST CURRENT IMPEDANCE

Contextual Info: Formosa MS MICRO-MELF Switching Diode MCL4148 Silicon epitaxial planar type Features MICRO-MELF Small surface mounting type High reliability .078 2.0 .070(1.8) High speed ( trr < 4 ns ) SOLDERABLE ENDS .019(.48) .011(.28) .0 (1 53 G .35 la ) ss .063(1.6)

Contextual Info: Super Fast Recovery Diode y -r> ? e Twin Diode OUTLINE DIMENSIONS D8LD40 400V 8A VSLJJX • trr5 0 n s 07Jl>:E -JO h-' •SR SS 'jv • mm. OA, asm •»«, * & •Æ fëSi fa RATINGS Absolute Maximum Ratings m Item Symbol mt&s Storage Temperature Operating Junction Temperature

1N3062

Contextual Info: Silicon Switching Diode 1N3062 I b 0-35 Glass Package Applications Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. D O -35 G la ss P ackage Features Lead Dia. 0.018-0.022" ► Six sigma quality

Contextual Info: N E C Electronics inc 30e d • m 2 ?s ss ooaTbil 1 m r-M -I-T3 r ^ U . / P H O T O D IO D E /_ PH309 PLASTIC MOLDED PIN PHOTO DIODE DESCRIPTION PA C KA G E DIMENSIONS PH309 is a photo diode with PIN structure. It has a wide in millimeters photo-receiving area and high speed response enabling applica­

1ZB36

Abstract: DIODE 1zb36 1ZB36 zener zener 150v 1w 120V 1W Zener Diode 3Z27 DIODE 1ZB20 zener zener diode 6.2v 1w ZENER 68V 1W 1Z150
Contextual Info: POWER ZENER Diode -> Power Dissipation F2.L3 Zener Voltage «- 1W Pacakae DO-41 SS DO-15 3W 5W DO-15L DO-201 AD _ 6.2V 1Z6.2 6.8V 7.5V 1Z6.8, 1Z6.8A 1ZB6.8 1Z7.5, 1Z7.5A 1ZB7.5 8.2V 1Z8.2, 1Z8.2A 1ZB8.2 9.1V 1Z9.1, 1Z9.1A 1ZB9.1 10V 1Z10, 1Z10A 1ZB10 11V 1Z11, 1Z11A

BAV19

Abstract: BAV20 BAV21 FDH400
Contextual Info: BAV19 / BAV20 / BAV21 Discrete POWER & Signal Technologies National Semiconductor' BAV19 / 20 / 21 DO-35 High Voltage General Purpose Diode Sourced from Proce ss 1J. N S C alternate for B A V 1 9 & BAV20: FDH400. Absolute Maximum Ratings* Symbol W lv TA = 25°C unless otherwise noted

diode OA-79

Abstract: germanium diode OA79 OA79 OA79 diode reverse circuit 0A79 oa79 diode 0A79 diode Diode germanium oa 2-OA79 DIODE OA79
Contextual Info: 0A79 2-O A79 G E R M A N IU M DIODE Germanium diode in all g la ss construction for use in a .m . detector circu its. Type 2-OA79 consist* of 2 diodes OA79 selected lo r operation in a ratio detector circuit. MECHANICAL DATA Dimensions in mm not tlnntd The white band indicates

XX 1190

Abstract: cd 1191 XX1110 intensifier XX1111 XX1190 XX1191 diode IN 45 30 kv diode 1200XX
Contextual Info: Image intensifier tubes Single stage Type X X 1110 XX1111 XX 1190 X X 1191 XX 1200 XX 1201 Configuration Tetrode Tetrode D iode D iode Diode D iode Focusing m ethod electrostatic Input face plate Fiber optics, flat 38 25 25 18 18 G la ss Fiber optics G lass

S-Mini

Abstract: SSMini s-mini 2-pin package
Contextual Info: New Low VF Schottky Barrier Diode Series ! Overview Low VF Schottky Barrier Diodes is ideal for the power source of personal computers and portable equipment. With extensive package configurations that range from SS Mini-type to New Mini Power-type packages, these diodes

Contextual Info: l“- K 3 Phase Bridge Diode 71"—K^E5/zl—; U Diode Module • O U T L IN E D IM E N S IO N S S30VTD/S30VTAD 800V 30A * .SigC A W o < >J - K J g + l l M A X X j « 1 . 6 r ' i - o sS? S30VTA type has solid wire lead terminals. (11MAXX ^ 1 ,6) ■ R A T IN G S

SMD diode JB

Abstract: marking JB SCHOTTKY BARRIER DIODE Package Marking I60 DF30SC4M lupx SHINDENGEN DIODE
Contextual Info: Schottky Barrier Diode Twin Diode mnm DF30SC4M o u t lin e 40V 30A Feature • SM D • SM D • PR RSM • P r r s m Rating • / jv s fc fc œ s s » • High lo R ating-Sm all-R KG • D C /D C • Sw itching Regulator • D C /D C Converter Main Use • m m . y - h . O A m ss

MINI3PIN

Abstract: MA4ZD14
Contextual Info: New Low V F Schottky Barrier Diode Series • Overview This series of low Schottky barrier diodes is ideal for the power source of personal computers and portable equipment. With extensive package configurations that range from SS Mini-type to New Mini Power-type

Contextual Info: HSS81-Silicon Epitaxial Planar Diode for High Voltage Switching Features Outline • High reverse voltage. VR=150V • Suitable for 5mm pitch high speed automatical insertion. • S m all g la ss p ack age (M H D ) en a b les easy