DIODE SS 3 Search Results

Thyristor ys

Contextual Info: SKN 140F THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Fast Recovery Rectifier Diode SKN 140F SKR 140F OB$; OBB; O <=SS <USS <YSS O <=SS <USS <YSS CPB;$ Q =RS G L%&T4%9% ,&'9 0+ *+81489+95 +F)(&14+8N CPGO Q <US G L548H <VSA <SSS 3WA :* Q <SS XIN $>? <USP<= $>B <USP<=

Contextual Info: SKN 141F THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Fast Recovery Rectifier Diode SKN 141F SKR 141F OB$; OBB; O <=SS <USS <YSS O <=SS <USS <YSS CPB;$ Q =RS G L%&T4%9% ,&'9 0+ *+81489+95 +F)(&14+8N CPGO Q <US G L548H <VSA <SSS 3WA :* Q <SS XIN $>? <U<P<= $>B <U<P<=

Contextual Info: SKN 136F THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode OB$; OBB; O WSS <SSS O WSS <SSS CPB;$ Q =RS G L%&T4%9% ,&'9 0+ *+81489+95 +F)(&14+8N CPGO Q <UV G L548H <WSA <SSS 3XA :* Q <SS YIN $>? <URPSW $>B <URPSW $>? <URP<S $>B <URP<S <=SS <=SS $>? <URP<= Symbol Conditions

Contextual Info: SKN 135F THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode OB$; OBB; O WSS <SSS O WSS <SSS CPB;$ Q =RS G L%&T4%9% ,&'9 0+ *+81489+95 +F)(&14+8N CPGO Q <UV G L548H <WSA <SSS 3XA :* Q <SS YIN $>? <UVPSW $>B <UVPSW $>? <UVP<S $>B <UVP<S <=SS <=SS $>? <UVP<= Symbol Conditions

marking code SS

Abstract: RB751S-40
Contextual Info: RB751S-40 PLANAR SCHOTTKY BARRIER DIODE High Speed Switching For Detection PINNING Features PIN • Small surface mounting type • Low reverse current and low forward voltage • High reliability DESCRIPTION 1 Cathode 2 Anode 2 1 SS Top View Marking Code: "SS"

marking code SS

Abstract: "MARKING CODE SS" RB751S-40
Contextual Info: RB751S-40 PLANAR SCHOTTKY BARRIER DIODE High Speed Switching For Detection PINNING Features PIN • Small surface mounting type • Low reverse current and low forward voltage • High reliability DESCRIPTION 1 Cathode 2 Anode 2 1 SS Top View Marking Code: "SS"

diode Z47

Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
Contextual Info: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352

Contextual Info: SKKT 27, SKKT 27B, SKKH 27 THYRISTOR SEMIPACK 1 Thyristor / Diode Modules NOMP NOOP= NDOP QJOPM R BS I G1&321.1 K&0.% +- 5- '2).-.* -7%(&'2-)H N YSS UASS UBSS UTSS N VSS UCSS U]SS U@SS QJIN R CT I G*2)> UVSW J5 R VC XEH MZZJ CT[SV? MZZJ CT¥SV? MZZ$ CT[SV?

DIODE REA

Contextual Info: DIODE ARRAY D 1 C S 2 0 F e a tu re s 9"4 $r — Y — is 3 / ' f 77*3 v — K • 3 i > t L tz ? -f ? -— K 7 w >r -Y T " f a 'Ü S f f if iL 31^3 x F Ä'^ipKclüfiST-i 4 J: 7 3 X è-iâ^L i l f c . ►D IC Ss are diode arrays con sist of three g la ss passivated diodes sim ilar to 1N4003.

5s70

Abstract: 1N3604 F100 tl1507
Contextual Info: 1 IM 3604 Silicon planar diode The silicon planar diode 1 N 3 6 0 4 in the gla ss package 51 A 2 D IN 41 8 8 0 D O -7 is designed for use as high-speed sw itching diode as well as for general sw itching applications. The planar technique results in short reverse recovery time, small

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30ASH-06 HIGH-SPEED SWITCHING USE FS30ASH-06 ' 2.5V DRIVE . ' V ' rDS ON (MAX) . d ss ' Id . ' Integrated Fast Recovery Diode (TYP.) .60V . 30mi2 .30A 65ns APPLICATION M otor control, Lamp control, Solenoid control

Contextual Info: MITSUBISHI Neh POWER MOSFET FS2ASJ-3 HIGH-SPEED SWITCHING USE FS2ASJ-3 # t ' 4 V D R IV E ' V . .150V ' rDS ON (MAX) . .0.75Í2 ' Id . .2 A ' Integrated Fast Recovery Diode (TYP.) d ss 65ns APPLICATION

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10ASH-03 HIGH-SPEED SWITCHING USE FS10ASH-03 ' 2.5V DRIVE . ' V ' rDS ON (MAX) . d ss ' Id . ' Integrated Fast Recovery Diode (TYR) .30V . 92mi2 .10A 35ns APPLICATION M otor control, Lamp control, Solenoid control

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10ASJ-03 HIGH-SPEED SWITCHING USE FS10ASJ-03 ' 4V DRIVE . ' V ' rDS ON (MAX) . d ss ' Id . ' Integrated Fast Recovery Diode (TYP.) .30V . 75mi2 .10A 35ns APPLICATION M otor control, Lamp control, Solenoid control

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5KMJ-06 HIGH-SPEED SWITCHING USE FS5KMJ-06 + 4 * ' 4V DRIVE ' V d ss .60V . . 0.14£2 . 5A ' Id . ' Integrated Fast Recovery Diode TYP. .45ns V is o .

saia

Abstract: ESJA98 ESJA98-06 ESJA98-08
Contextual Info: E S J 9 A 8 6 k v , 8 k v t K ± ' i Kw i 3? ' f k •W B'+sS : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJA98I*, fcl ESJA98 is high reliability resin molded type high seepd hig voltage diode in small size package which is sealed multilayed mesa type silicon chip by epoxy resin.

Contextual Info: PD- 91789 International IO R Rectifier PRELIMINARY IR F 7 3 2 4 D 1 FETKY MOSFET / Schottky Diode Co-packaged H EXFET Power M O SFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO -8 Footprint V d ss = -2 0 V R ü S o n = o . 1 8 £ 2

AK116

Abstract: DSD433
Contextual Info: ALLEGRO MICROSYSTEMS INC 1 3 T> • 0S0433fi DODBTTfl b ■ ALGR T-91-01 PROCESS YIA Process YIA Power Diode P ro c e ss Y IA is a silicon epitaxial N on P diode d e sig n e d for high-power applications. It ca n operate with a forward current of up to 5 A .

diode m1l

Abstract: M1L marking MA781
Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA781 Silicon epitaxial planer type Unit : mm 0.28±0.05 1608 type SS-Mini type diode ● Surface mounting, enabling high-density mounting ● Fast t rr (reverse recovery time), optimum for high-frequency rectifi- 1 3

Contextual Info: ALLEGRO MICROSYSTEMS INC D 05GM33Ô G0G3777 T • ALGR T-91-01 PROCESS BGA Process BG A Power Schottky Diode P ro ce ss B G A is a silicon Schottky-barrier diode de sig n e d for high-power applications. It can operate with forward currents of up to 3 A and has a typical

Contextual Info: MITSUBISHI Neh POWER MOSFET FS70KMH-03 HIGH-SPEED SWITCHING USE FS70KMH-03 • 2.5V DRIVE • VD SS . • rDS ON (MAX) • ' ID I • Integrated Fast Recovery Diode (TYP.) • V is o .

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5ASJ-2 HIGH-SPEED SWITCHING USE FS5ASJ-2 ' 4 V D R IV E ' V . .100V ' rDS ON (MAX) . .0.4Í2 ' Id . .5A ' Integrated Fast Recovery Diode (TYP.) d ss 80ns APPLICATION

DIODE T50

Abstract: MMBD7000 mmbd1201 MA670
Contextual Info: MMBD7000 & Discrete POW ER & Signal Technologies National Semiconductor’ MMBD7000 High Conductance Ultra Fast Diode Sourced from P roce ss 1P. Se e MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol ta^scum essotnemisenoted Parameter Units

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5AS-2 HIGH-SPEED SWITCHING USE FS5AS-2 ' 10V DRIVE ' V ' rDS ON (MAX) . d ss .1 o o v . 0.47Í2 . ' Id . ' Integrated Fast Recovery Diode (TYP.) . 5 A 80ns APPLICATION