ESJA98 Search Results

ESJA98-08

Abstract: ESJA92-10 ESJA92-12 ESJA98-06
Contextual Info: COLLMER SEMICONDUCTOR INC 34E t • SS3S7‘i2 0001155 M « C O L ^ T-03-O < ^ High voltage silicon rectifier diodes/High speed 8 m A a v g . , up to 12 kV ESJA98-D ESJA92-D Maximum ratings Maximum ratings Type Repetitive peak reverse voltage V rrm Average

saia

Abstract: ESJA98 ESJA98-06 ESJA98-08
Contextual Info: E S J 9 A 8 6 k v , 8 k v t K ± ' i Kw i 3? ' f k •W B'+sS : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJA98I*, fcl ESJA98 is high reliability resin molded type high seepd hig voltage diode in small size package which is sealed multilayed mesa type silicon chip by epoxy resin.

ESJA53

Contextual Info: HIGH VOLTAGE DIODES Part Number V rrm lo VF tir Pkg. Length Pkg. Dia. W ire Dia. KV (mA) (V) (¿¿sec) (A) (In.) (B) (In.) (C) (In.) Resin Package, 6 0 Nanosecond Recovery ESJA98-08 8 8 23.4 .06 .256 .098 .0197 ESJA92-12 12 8 36.0 .06 .394 .118 .0236 .0197

FUJI ESJC04-05

Abstract: ESJC01-12B ESJA82-10 ESJA82-12 ESJA82-14 ESJA83-16 ESJA83-18 ESJA83-20 ESJA88-06 ESJA88-08
Contextual Info: HighVoltage Silicon Rectifiers <§ Part Number Vrbm KV lo (mA) Vf (V) Pkg. L. t rr Pkg. Dia. Wira Dia. (in.) (in.) frisec) (in.) Resin Package, 63 Nanosecond Recovery ESJA98-06 6 8 18.0 .06 .256 .098 ESJA98-08 8 8 23.4 .06 .256 .098 .020 .020 ESJA92-12 12

Contextual Info: HIGH VOLTAGE DIODES Part N um ber V kRM lo Vf ta P kg. Length Pkg. Dia. W ire Dla. K V (m A) (V) (nsec) (A) (In.) (B) (In.) (C) (In.) Resin Package, 60 Nanosecond Recovery ESJA98-08 8 8 23.4 .098 .0197 12 8 36.0 .00 .00 .256 ESJA92-12 .394 .118 .0236 Resin Package, 90 Nanosecond Recovery

ESJA04-02

Contextual Info: HIGH VOLTAGE DIODES Part Number V rrm lo VF ter Pkg. L Pkg. Dia. Wire Dia. K V (mA) (V) (lu ie c ) (In.) (In.) On.) Resin Package, 60 Nanosecond Recovery ESJA98-08 6 8 23.4 .06 .256 .098 .020 ESJA92-12 12 8 36.0 .06 .394 .118 .024 Resin Package, 90 Nanosecond Recovery

ESJC30-08

Abstract: ESJA98-08 ESJA82-10 ESJA82-12 ESJA82-14 ESJA83-16 ESJA83-18 ESJA83-20 ESJA83-24 ESJA88-06
Contextual Info: HIGH VOLTAGE DIODES Part Number | V rrm lo VF t* Pkg. L Pkg. Dia. Wire Dia. KV (mA) (V) (usee) (In.) (In.) (In.) Resin Package, 60 Nanosecond Recovery ESJA98-08 6 8 23.4 .06 .256 .098 .020 ESJA92-12 12 8 36.0 .06 .394 .118 .024 .020 Resin Package, 90 Nanosecond Recovery

ESJA82-10

Abstract: ESJA82-12 ESJA82-14 ESJA83-16 ESJA83-18 ESJA83-20 ESJA88-06 ESJA88-08 ESJA92-12 ESJA98-06
Contextual Info: • High Voltage Silicon Rectifiers <§ Part Number lo V rrm KV Vf (mA) (V) Pkg. Dia. Pkg. L. trr (in.) (in.) frisec) W ire Dia. (in.) Resin Package, 60 Nanosecond Recovery ESJA98-06 6 8 18.0 .06 .256 .098 ESJA98-08 8 8 23.4 .06 .256 .098 .020 .020 ESJA92-12

ESJC30-08

Abstract: ESJA82-10 ESJA82-12 ESJA82-14 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24 ESJA88-06 ESJA88-08
Contextual Info: HIGH VOLTAGE DIODES : Part Number V rrm NJ : K V lo (mA) (§ VF ir P kg . L e n g th P k g . D ia. W ire D ia. (V) (lisec) (A) (In.) (B ) (In.) (C) (In.) Resin Package, 60 Nanosecond Recovery ESJA98-08 8 8 23.4 .06 .256 .098 .0197 ESJA92-12 12 8 36.0 06

ESJA04-02

Contextual Info: High Voltage Diodes Ratings and characteristics U General purpose type Type Maximum rating V rrm kV ESJA04-02 2 ESJA04-03 ESJA57-04 ESJA57-04 ESJA58-06 3 ESJA58-08 ESJA54-06 ESJA54-08 ESJA52-10 ESJA52-12 ESJA52-14 ESJA53-16 3 Therm al rating lo If s m Tc °C

Contextual Info: ESJ A9 8 6 k V 8 , k V : Outline Drawings HIGH VOLTAGE SILICO N DIODE E S JA 9 8 (i, -yT'5:1 l- T iijh L fc E S JA 9 8 is high reliability resin molded type high seepd high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin.

diode ja8

Contextual Info: ESJA88 6kv, 8 k V K * J E S a y - i* - K • «•»■ + * : Outline Drawings HIGH VOLTAGE SILICON DIODE s * iiW t t # ii* - ^ K s * E K * * - f* - K T T o E S JA 8 8 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa

ESJA56-24

Abstract: ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
Contextual Info: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250

ESJA56-24

Abstract: ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
Contextual Info: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

2CL25

Abstract: 2CL77 2CL91 2CL24 2CL70 1A7 Zener SMD LL4001 BA151 HVP320 2CL75
Contextual Info: Diodes Fast Switching Rectifiers LL4148 Vrm=100V;Ifsm=500mA 1N4148B/P T/R (T/B) Vr=100V;Ifm=0.5A MinIMELF(SOD 80) DO 41 General Purpose Rectifiers LL4001 4007 NEW Vrm=50 1000V; Ifsm=1.0A MELF 1N4001 4007(B/P)(T/R)(T/B) Vr=50 1000V; Ifm=1.0A DO 41 1A7 Vr=1200V; Ifm=1.0A

ESJA56-24

Abstract: ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
Contextual Info: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250

ESJA56-24

Abstract: ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
Contextual Info: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 24k 3000 4000

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

ESJA56-24

Abstract: ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
Contextual Info: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250

357B

Abstract: ESJA56-24 ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20
Contextual Info: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250

ERG81-004

Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Contextual Info: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *

3FTA

Abstract: ESJA56-24 ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20
Contextual Info: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250

ESJA56-24

Abstract: ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
Contextual Info: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250