DIODE SMD 10A Search Results

5n fast recovery diodes

Abstract: 30A 45V SCHOTTKY BARRIER RECTIFIER GENERAL SEMICONDUCTOR SMD DIODES smd diode 0.5A fast 600v LOW LOSS FAST RECOVERY DUAL DIODES
Contextual Info: CONTENTS I. II. III. IV. V. SMD RECTIFIER DIODE LIST. SMD PACKAGE OUTLINE DRAWINGS.

DIODE smd marking uh

Abstract: cd4020
Contextual Info: Super Fast Recovery Diode Twin Diode mtm OUTLINE Package : STO-220 DF10LC20U Unit-mm Weight 1.5g Typ 10.2 O'/KB !J(M ) 200V 10A Feature • SMD Type No. • SMD • Low Noise •e y -rx • trr= 3 5 n s Polarity • trr=35ns 4.7 Main Use >DC/DC nytK—S

Contextual Info: Schottky Barrier Diode single Diode m n m DE10P3 o u tlin e Unit: mm Package \ E-pack Weight 0.326k Typ 30 V 10A I 2 I Feature • SMD • SMD • iSffiVF=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-RKG Main Use • Reverse connect protection for

SMD 1Ft

Abstract: DF10L60 TRR50NS smd marking KM diode marking NZ
Contextual Info: Super Fast Recovery Diode wnnm o u t l i n e Single Diode DF10L60 600V 10A Feature • SMD • SMD • High Voltage • trr-50ns • trr-5 0 n s • PFC • PFC Pow er Factor Correction Main Use • Switching Regulator •mm,OA • Fly Wheel • FA • Factory Autom ation

Diode SMD SJ 02

Abstract: *f10sc9 10sc9 Diode SMD SJ 05 Diode type SMD marking SJ Diode SMD SJ MARKING JM DF10SC9 Diode SMD SJ 01 Diode SMD SJ 11
Contextual Info: Schottky Barrier Diode Twin Diode mnm DF10SC9 o u tlin e 90 V 10A Feature • SMD • SMD • PRRSM • P rrsm Rating • /jv s fc fc œ s s » • High lo Rating-Small-RKG Main Use • DC/DC •mm.y-h.OAmss • iBiS.iK—S 'y USSSb • • • • Switching Regulator

j532

Abstract: C3B56 DF10LC30 STO-220
Contextual Info: Super Fast Recovery Diode Twin Diode mtmm DF10LC30 o u t lin e 300V 10A Feature • SMD • e y -rx • SMD • Low Noise • trr-30ns • trr-30ns Main Use • DC/DC D y / K - Ï • S a .O A .B B W • fflte.FA • PDP • Switching Regulator • DC/DC Converter

smd diode marking LM

Abstract: smd diode "marking 77" SMD diode TSA smd diode HB RW marking Diode marking TY
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE10SC3L Unit^mm W eight 0.326g Typ 30 V 10A Feature <SMD • SMD • Tj=150°C •<SV f=0.45V 1Tj=150°C 1 Low Vf=0.45V 1 P rrsm Rating 1 High lo Rating -Small-PKG • P r r s m 7 7A ' 5 > ^ i S IÎE

Scans-00828

Abstract: DE10PC3 SHINDENGEN DIODE 0336g
Contextual Info: Schottky Barrier Diode Twin Diode mnm DE10PC3 o u tlin e E-pack Package Unit I mm Weight 0.326k Typ r r« 30 V 10A œ - Feature • SMD • SMD • î 3 V f=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-RKG 10PC3 n - y W X fW Date code Main Use

smd diode marking U1

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE10PC3 Unit-mm Weight 0.326g Typ 30 V 10A Feature • SMD • SMD • î 2 ® V f =0.4 V • U ltra -L o w V f=0.4V • iJ 'S = À l; jS î § M • High lo R a tin g -S m a ll-P K G Main Use

Contextual Info: Schottky Barrier Diode Twin Diode mwm DE10SC3L o u t lin e E-pack Package Unii I mm Weight 0.326« Typ 30 V 10A Feature • SMD • SMD 1 • (S V f = 0.45V • Low V f=0.45V • P r r s m 7’ K 5 > ì ' i ì ì ì • PnnsM Rating • /Jv3Ü*®3ÎES*

DIODE smd marking Ak

Contextual Info: Super Fast Recovery Diode Twin Diode OUTLINE DF10LC30 U nit‘mm Package : STO-220 Weight lJ>g Typ 102 30 0V 10A Feature • SMD • SMD • e y 'f x • Low Noise • trr= 3 0 n s • trr-3 0 n s 4.7 Main Use • T .'f • D C /D C 3 y i { - 9 • Switching Regulator

l30 diode smd

Abstract: smd diode AE 2F smd diode marking L30
Contextual Info: Schottky Barrier Diode mtmm o u t l i n e Single Diode DE10S3L U nit I mm Package : E-pack W eight 0.326« T y p M 30 V 10A Feature 6.6 • SMD • SMD • V f =0 .4 5 V • Low V f =0 .4 5 V • • P brsm Rating pbrsm i- • • High Io R ating-Sm all-PK G

10LC20U

Abstract: 10LC20 spacification DIODE smd marking MO 10LC2 smd diode marking JC DF10LC20U
Contextual Info: Super Fast Recovery Diode Twin Diode m tm m o u tlin e DF1 0 LC 2 0 U 20 0V 10A Feature • SMD • Low Noise • trr-35ns • SMD • e y -rx • trr-3 5 n s Main Use • D C /D C D y / K - Ï • m m , OA.RBE • a e .F A • • • • Switching Regulator

Contextual Info: Super Fast Recovery Diode Single Diode w nnm o u tlin e DF10L60 P a c k a g e : S T O -2 2 0 60 0V 10A D a le c o d v * ^ U n it'm m Weight 15g T yp 10.2 (£> Control No Feature • SMD • SMD • SBEE • High Voltage • trr=50ns • trr-5 0 n s ¿TV"*

Contextual Info: □ - □ 3 . V 'C X - Y Super Fast Recovery Diode Twin Diode mn?â Surface Mount OUTLINE DIMENSIONS DF10LC20U Unit • mm Package I STO-220 10 9 ± -9- 200V 10A >SMD m s 'i'x > trr35n s >SR SÜ >DC/DC ® > 7 5 ^ * -f-J b 2 @ (D >^BsOAw0,^ K H s . FA RATINGS

SMD diode MARKING 5h

Contextual Info: Single Diode DE10P3 Schottky Barrier Diode mtmm o u t l in e 30 V 10A Feature • SMD 'S M D 1Ultra-Low V f=0.4V • î Sê V f=0.4V 1High lo Rating-Small-RKG Main Use • /îÿxU-JËfêKlt • Reverse connect protection for DC power source • DC O R-output

smd diode a5

Abstract: DG1J2A smd diode marking a5 SMD MARKING CODE vk SHINDENGEN DIODE S71S
Contextual Info: Schottky Barrier Diode single Diode DG1J2A m n m o u t lin e Package G1F 20V 1.5A 3.5 Feature • Ö 'J ^ S M D |S711 • Ultra-small SMD • iS iS S =0.8 mm • I r= 10yA Unit I mm Weight 0.01 1r Typ 7 • Ultla-thin PKG=0.8mm • Low Ir=10a/A Cathode m ark

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE10SC4 Unit-mm Weight 0.326g Typ 40 V 10A Feature • SM D >SMD • Tj=150°C 1Tj=150°C • P r r s m T ’A ' ^ V S ' i f S l i E 1 P r r s m Rating 1 High lo Rating -Small-PKG Main Use

P channel MOSFET 10A

Abstract: SMD 20A logic level n channel MOSFET Transistor Mosfet N-Ch 30V RG60
Contextual Info: IC IC SMD Type Power MOSFET 2 Am, 30 V KMDF2C03HD Features Ultra Low RDS on Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive ? Can Be Driven by Logic ICs Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery

10VTZ

Contextual Info: Schottky Barrier Diode Twin Diode mtm DF10SC6 O UTLINE U n it-m m Package : STO-220 W e igh t 1.5g T y p u^háLÍ°-(M) 10.2 60 V 10A Feature * SMD < SM D ' T j= 1 5 0 °C 1 Tj= 150°C 1P rrs m 1 P rrs m R ating Main Use >X ' f ' y 1S w itc h in g R egulator

tr 30 f 124

Contextual Info: □ - □ 3 . V 'C X - Y Super Fast Recovery Diode Twin Diode mn?â Surface Mount O U T L IN E D IM E N S IO N S DF10LC30 Unit • mm Packag e I STO -220 10 9 ± -9- 300V 10A >SMD m s 'i'x > trr30n s >DC/DC mms oajm^ ® 2 @ (D m ie s f a >PDP R A T IN G S

Contextual Info: MOSFET IC Transistors SMD Type Product specification 2SK3366 TO-252 +0.1 0.80-0.1 Low Ciss: Ciss =730 pF TYP. Built-in gate protection diode 2.3 +0.1 0.60-0.1 3.80 MAX. VGS = 4 V, ID = 10A +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)3 = 43m Unit: mm +0.1 2.30-0.1

Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP Part Number: APT1608SECK Super Bright Orange Features Description z 1.6mmX0.8mm SMT LED, 0.75mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.

Contextual Info: 3.2x1.6mm SMD CHIP LED LAMP Part Number: KPTR-3216SECK Super Bright Orange Features Description z 3.2mmx1.6mm SMT LED,1.05mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.