DIODE SMD 10 25 Search Results

B & R Automation

Contextual Info: Super Fast Recovery Diode Single Diode m fm DF10L60 OUTLINE Unit-mm Weight 1.5g Typ Package : STO-220 10.2 6 0 0 V 10 A Feature • SM D • SMD • High Voltage • trr=50ns 1 r a lî E E • trr=50ns 4.7 Main Use - PFC • PFC(Power Factor Correction)

SMD 20A

Abstract: 2SK3404
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3404 TO-263 +0.1 1.27-0.1 Features 4.5-V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 25 nC TYP. ID = 40 A, VDD = 24 V, VGS = 10 V Built-in gate protection diode

mosfet 45a 200v

Abstract: 2SK3712
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3712 TO-252 Features High voltage: VDSS = 250 V Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low Ciss: Ciss = 450 pF TYP. VDS = 10 V, ID = 0 A Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max +0.15 5.55-0.15

df20lc30

Contextual Info: □ - □ 3 . m n?â Surface Mount Super Fast Recovery Diode Twin Diode O UTLINE D IM E N S IO N S DF20LC30 U nit • mm Package I STO-220 10 9 ±0-9 M 300V 2 0 A >SMD m s 'i'x > trr3 0 n s >SRSÜ >DC/DC > 7 5 ^ * -f-J b (2)@ <D >^BsOAw0 ,^ K H s . FA

10SC4

Contextual Info: Schottky Barrier Diode Twin Diode l ^ t l l OUTLINE Package : E-pack DE10SC4 Unit: mm Weight 0.326tf Typ 4 0 V 10 A Feature G6 • SM D • SMD • P rrsm 7 ' K 5 > î / x (SSE • Prrsm Rating Type wo I H igh lo R a tin g -S m a ll-P K G 10SC4 p -/Hü»XM

2SK3467

Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3467 TO-263 +0.1 1.27-0.1 Features 4.5 V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 55 nC TYP. ID = 80 A, VDD = 16 V, VGS = 10 V Built-in gate protection diode

Contextual Info: Transistors MOSFET IC SMD Type Product specification 2SK3355 TO-263 +0.1 1.27-0.1 RDS on 2 = 8.8m MAX. (VGS = 4 V, ID = 42 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss: Ciss = 9800 pF TYP. 5.60 MAX. (VGS = 10 V, ID = 42 A) Built-in gate protection diode

NS-106

Abstract: 2SK3354 NS 106
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3354 TO-263 +0.1 1.27-0.1 RDS on 2 = 12 m MAX. (VGS = 4 V, ID = 42 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss: Ciss = 6300 pF TYP. 5.60 MAX. (VGS = 10 V, ID = 42 A) Built-in gate protection diode +0.2 4.57-0.2

DIODE marking A2

Abstract: smd A2 smd diode A2 smd diode 1301 marking AU smd transistor marking A2 BAT18 A2 diode BAT18-05 diode smd A2 BAT18-06
Contextual Info: Diodes SMD Type Silicon RF Switching Diode BAT18;BAT18-04 BAT18-05;BAT18-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Features Low-loss VHF/UHF switch above 10 MHz +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1

smd diode a5

Abstract: DIODE a5 marking a5 diode A5 DIODE SMD DIODE MARKING 14 diode marking 14 smd diode 1301 smd diode marking a5 smd marking S21 s21 diode
Contextual Info: Diodes SMD Type General Purpose PIN Diode KAP50-03 BAP50-03 SOD-323 Unit: mm +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Features Low diode capacitance. Low diode forward resistance. +0.1 2.6-0.1 0.375 +0.05 0.1-0.02 0.475 1.0max Absolute Maximum Ratings Ta = 25

SMU30N03-30L

Abstract: q3020 smu30n03 SMD30N03-30L
Contextual Info: Tem ic SMD/SMU30N03-30L S em i co n d u c t or s N-Channel Enhancement-Mode Transistors, Logic Level Product Summary VDS V IDa (A) r DS(on) ( ^ ) 0.030 30 30 TO-251 TO-252 D P o o H r Drain Connected to Tab G D S Top View Ô G D S Top View Order Number:

KRF7509

Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7509 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter

SMD DIODE S4

Abstract: S4 DIODE DIODE marking S4 DIODE S4 smd diode marking s4 smd S4 BBY62 S4 SMD DIODE marking s4 diode marking cd
Contextual Info: Diodes SMD Type UHF variable capacitance double diode BBY62 Unit: mm Features Excellent linearity Small plastic SMD package C28:1.9 pF; ratio: 8.3. Absolute Maximum Ratings Ta = 25 Parameter Symbol continuous reverse voltage Test Condition Min VR continuous forward current

P channel MOSFET 50A

Abstract: KRF7105
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7105 Features Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol

p channel mosfet 100v

Abstract: 100V Single p-Channel MOSFET KRF7350 n-channel 100v 100A 100V Single P-Channel HEXFET MOSFET P-channel MOSFET VGS -25V 15a 50v p-channel mosfet Dual N P-Channel 100V 100v P-Channel MOSFET P-channel MOSFET 50V, 10 A rds
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7350 Features Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit VDS 100 -100 V ID 2.1 -1.5 Continuous Drain Current Ta = 70

06n03la

Abstract: 06n03la datasheet, download IPD06N03LA IPU06N03LA JESD22 P-TO252-3-11
Contextual Info: IPD06N03LA IPU06N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target application V DS 25 V R DS on),max (SMD version) 5.7 mΩ ID 50 A • N-channel • Logic level

04N03LA

Abstract: SMD MARKING CODE transistor TO262-3-1 IPB04N03LA IPI04N03LA IPP04N03LA d55a1
Contextual Info: IPB04N03LA IPI04N03LA, IPP04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 3.9 mΩ ID 80 A • Logic level • Excellent gate charge x R DS(on) product (FOM)

smd 1C

Abstract: S2659 25040A smd diode 1c
Contextual Info: IC IC SMD Type 40V N-Channel PowerTrench MOSFET KDS4470 Features 12.5 A, 40 V. RDS ON = 9m @ VGS = 10 V Low gate charge (45 nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25

06n03la

Abstract: 06n03la datasheet, download 06N03 06N03LA equivalent 06n03l IPD06N03LA IPU06N03LA IPS06N03LA IPF06N03LA P-TO252-3-11
Contextual Info: OptiMOS 2 Power-Transistor IPD06N03LA IPF06N03LA IPS06N03LA IPU06N03LA Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.7 mΩ ID 50 A • N-channel, logic level

05n03l

Abstract: 05N03 s4141 05N03LA Q67042-S4141 SMD MARKING CODE transistor IPB05N03LA IPI05N03LA IPP05N03LA
Contextual Info: IPB05N03LA IPI05N03LA, IPP05N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target application V DS 25 V R DS on),max (SMD version) 4.6 mΩ ID 80 A • N-channel - Logic level

smd 1C

Contextual Info: Transistors IC SMD Type Complementary PowerTrench Half-Bridge MOSFET KDS4501H Features N-Channel 9.3 A, 30 V RDS ON = 18m RDS(ON) = 23m @ VGS = 10 V @ VGS =4.5V P-Channel -5.6 A, -20 V RDS(ON) = 46 m RDS(ON) = 63 m @ VGS =- 4.5 V @ VGS =-2.5V Absolute Maximum Ratings Ta = 25

smd diode 46A

Abstract: equivalent smd mosfet IRF7205 IC MOSFET QG KRF7205 ld smd transistor smd mosfet
Contextual Info: MOSFET IC SMD Type HEXFET Power MOSFET KRF7205 IRF7205 Features Adavanced Process Technology Ultra Low On-Resistance P-Channel MOSFET Surface Mount Dynamic dv/dt Rating Fast Switching Absolute Maximum Ratings Ta = 25 Symbol Rating Continuous Drain Current, VGS @ 10V @ TA = 25

Contextual Info: IC IC SMD Type Switching KP8M9 Features Low on-resistance. Built-in G-S Protection Diode. Small and Surface Mount Package. Power switching, DC / DC converter. Absolute Maximum Ratings Ta = 25 Symbol N-Channel P-Channel Unit Drain-source voltage Parameter VDSS

2028A

Contextual Info: IC IC SMD Type Switching KP8M7 Features Low on-resistance. Built-in G-S Protection Diode. Small and Surface Mount Package. Power switching, DC / DC converter. Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit Drain-source voltage VDSS