DIODE SE14 Search Results

SE1470

Abstract: SE1470-002L
Contextual Info: SE1470 AIGaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range (-55°C to +125C)

Contextual Info: SE1450 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTIC 25°C unless otherwise noted PARAMETER Total Power Output SE1450-001, SE1450-001 L SE1450-002, SE1450-002 L SE1450-003, SE1450-003 L SE1450-004, SE1450-004 L Forward Voltage . Reverse Breakdown Voltage

GaAs 1000 nm Infrared Emitting Diode

Abstract: SD1410 SD1420 SD1440 SE1450
Contextual Info: 17 September 1997 SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24¡ nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55¡C to +125¡C) • Mechanically and spectrally matched to SD1420

SE1470

Abstract: SD1410 SD1420 SD1440 SE1470-XXX
Contextual Info: SE1470 AlGaAs Infrared Emitting Diode FEATURES • Compact metal can coaxial package • 24¡ nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range (- 55¡C to +125¡C)

GaAs 1000 nm Infrared Diode,

Abstract: SD1410 SD1420 SD1440 SE1450
Contextual Info: SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24¡ nominal beam angle • 935 nm wavelength • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and

SE1470-002L

Abstract: SE1470-003
Contextual Info: SE1470 AIGaAs Infrared Emitting Diode I FEATURES • Compact metal can coaxial package • 24° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents . Wide operating temperature range (-55°C to +125°C)

GaAs 1000 nm Infrared Diode,

Abstract: SE1450-002L
Contextual Info: SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24° nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and

SE1470

Abstract: SD1410 SD1420 SD1440
Contextual Info: 17 September 1997 SE1470 AlGaAs Infrared Emitting Diode FEATURES • Compact metal can coaxial package • 24¡ nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range (-55¡C to +125¡C)

diode t25 4 j5

Contextual Info: SE1470 AIGaAs Infrared Emitting Diode FEATURES • Compact metal can coaxial package • 24° nominal beam angle » 880 nm wavelength . Higher output power than GaAs at equivalent drive currents • Wide operating temperature range (-55°C to +125°C) . Mechanically and spectrally matched to SD1420

GaAs 1000 nm Infrared Diode,

Abstract: SE1450-002L se1450-003l
Contextual Info: SE1450 GaAs Infrared Emitting Diode FEA TU R ES • Compact, metal can coaxial package • 24° nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SD 1420 photodiode, SD 1440 phototransistor and SD1410

HOA2762

Abstract: HOA2762-001
Contextual Info: HOA2762 Transmissive Sensor DESCRIPTION The HOA2762 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA2762-001, -002 or photodarlington (HOA2762-003) encased in a black thermoplastic housing. Detector switching takes place whenever an

H0A1876

Contextual Info: H0A1876 Transmissive Sensor DESCRIPTION The HOA1876 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1876-001, -002 or photodarlington (HOA1876-003) encased in a white thermoplastic housing. Detector switching takes place whenever an

0.01 K100

Abstract: HOA-1875 HOA1875 PIC metal detector sensor IF HOA1875-001
Contextual Info: HOA1875 Transmissive Sensor DESCRIPTION The HOA1875 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1875-001, -002 or photodarlington (HOA1875-003) encased in a black thermoplastic housing. Detector switching takes place whenever an

H0A1874

Contextual Info: H0A1874 Transmissive Sensor DESCRIPTION The HOA1874 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1874-001, -002, -011, -012 or photodarlington (HOA1874-003, -013) encased in a black thermoplastic housing. Detector switching takes place

HOA2498-001

Contextual Info: HOA2498 Reflective Sensor DESCRIPTION The HOA2498 series consists of an infrared emitting diode and an NPN silicon phototransistor HOA2498-001, -002 or photodarlington (HOA2498-003), encased side-by-side on converging optical axes in a black thermoplastic housing. The

H0A1404

Abstract: HOA1404
Contextual Info: H0A1404 Reflective Sensor DESCRIPTION The HOA1404 series consists of an infrared emitting diode and an NPN silicon phototransistor HOA1404-001 ,-002 or photodarlington (HOA1404-003), encased side-by-side on converging optical axes, in a black thermoplastic housing. The

HOA14

Contextual Info: HOA1404 Reflective Sensor DESCRIPTION The HOA14C4 series consists of an infrared emitting diode and an NPN silicon phototransistor HOA1404-001 ,-002 or photodarlington (HOA1404-003), encased side-by-side on converging optical axes, in a black thermoplastic housing. The

HOA2498

Contextual Info: HOA2498 Reflective Sensor , FEATURES • Choiceol phoblransislor or pholodarlingtn output ' / / ' Wide opera ling temperature range - 55'C lo-MOO'C DESCRIPTION The HOA2498 secies oons&ls ol an inFrared emitting diode -and an NPN silicon phototransislor (H0A24B&- 001, - 002) or photodarington

Contextual Info: HOA2498 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Focused for maximum response • Wide operating temperature range -55°C to+100°C DESCRIPTION The HOA2490 series consists of an infrared emitting diode and an NPN silicon phototransistor

all Metal Detector

Abstract: HQA2862-003 ic for metal detector hoa2862
Contextual Info: HOA2862 Transmissive Sensor D ESCRIPTIO N The HOA2862 series consists of an infrared emitting diode facing an N PN silicon phototransistor HOA2862-001, -002 or photodarlington (HOA2862-003) encased in a black thermoplastic housing. Detector switching takes place whenever an

sd144

Abstract: reflective sensor
Contextual Info: HOA1404 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Focused for maximum response • Wide operating temperature range -55°C to +100°C DESCRIPTION The HOA1404 series consists of an infrared emitting diode and an NPN silicon phototransistor

Contextual Info: HOA2498 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Focused for maximum response • Wide operating temperature range {-55°C to +100°C DESCRIPTION The HOA2498 series consists of an infrared emitting diode and an NPN silicon phototransistor

HOA2762

Abstract: HQA2762 honeywell sensor
Contextual Info: HOA2762 Not recommended for new designs Transmissive Sensor DESCRIPTION The HOA2762 series consists of an infrared emitting diode facing an NPN silicon phototransistor HCJA2762-001, -002 or photodariington (HOA2762-003) encased in a black thermoplastic housing. Detector switching takes place whenever an

OA2498

Contextual Info: HOA2498 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Focused for maximum response • Wide operating temperature range -55°C to +100°C DESCRIPTION The HOA2498 series consists of an infrared emitting diode and an N PN silicon phototransistor