DIODE SD14 Search Results

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are

ic 4060

Abstract: 512 volt 100 current scr datasheet ic 4060 how to trigger dc volt by using SCR SCR Phase Control IC SD-14 SD-15 SD-16 CM42 CM421255
Contextual Info: CM421255 CM421655 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 SCR/Diode POW-R-BLOK Modules 55 Amperes/1200-1600 Volts Description: Powerex SCR/Diode POW-R-BLOK™ Modules are designed for use in applications requiring Half-Control and

SD140UF150A35

Contextual Info: SENSITRON SEMICONDUCTOR SD140UF150A35 TECHNICAL DATA SHEET DATASHEET 4222, Rev- SILICON ULTRA-FAST RECOVERY EPITAXIAL RECTIFIER DIE Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: •

Contextual Info: SENSITRON SEMICONDUCTOR SD140UF250B40 TECHNICAL DATA DATA SHEET 4978, Rev - SILICON ULTRA-FAST RECOVERY EPITAXIAL RECTIFIER DIE Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • •

GaAs 1000 nm Infrared Emitting Diode

Abstract: SD1410 SD1420 SD1440 SE1450
Contextual Info: 17 September 1997 SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24¡ nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55¡C to +125¡C) • Mechanically and spectrally matched to SD1420

GaAs 1000 nm Infrared Diode,

Abstract: SD1410 SD1420 SD1440 SE1450
Contextual Info: SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24¡ nominal beam angle • 935 nm wavelength • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and

GaAs 1000 nm Infrared Diode,

Abstract: SE1450-002L
Contextual Info: SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24° nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and

diode t25 4 j5

Contextual Info: SE1470 AIGaAs Infrared Emitting Diode FEATURES • Compact metal can coaxial package • 24° nominal beam angle » 880 nm wavelength . Higher output power than GaAs at equivalent drive currents • Wide operating temperature range (-55°C to +125°C) . Mechanically and spectrally matched to SD1420

GaAs 1000 nm Infrared Diode,

Abstract: SE1450-002L se1450-003l
Contextual Info: SE1450 GaAs Infrared Emitting Diode FEA TU R ES • Compact, metal can coaxial package • 24° nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SD 1420 photodiode, SD 1440 phototransistor and SD1410

HOA2762

Abstract: HOA2762-001
Contextual Info: HOA2762 Transmissive Sensor DESCRIPTION The HOA2762 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA2762-001, -002 or photodarlington (HOA2762-003) encased in a black thermoplastic housing. Detector switching takes place whenever an

H0A1876

Contextual Info: H0A1876 Transmissive Sensor DESCRIPTION The HOA1876 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1876-001, -002 or photodarlington (HOA1876-003) encased in a white thermoplastic housing. Detector switching takes place whenever an

0.01 K100

Abstract: HOA-1875 HOA1875 PIC metal detector sensor IF HOA1875-001
Contextual Info: HOA1875 Transmissive Sensor DESCRIPTION The HOA1875 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1875-001, -002 or photodarlington (HOA1875-003) encased in a black thermoplastic housing. Detector switching takes place whenever an

H0A1874

Contextual Info: H0A1874 Transmissive Sensor DESCRIPTION The HOA1874 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1874-001, -002, -011, -012 or photodarlington (HOA1874-003, -013) encased in a black thermoplastic housing. Detector switching takes place

H0A1874

Abstract: HOA1874-002
Contextual Info: H0A1874 Transmissive Sensor DESCRIPTION OUTLINE DIMENSIONS in inches mm The HOA1874 series consists of an infrared emitting diode facing an NPN silicon phototransistor (HOA1874-001, -002, -011, -012) or photodarlington (HOA1874-003, -013) encased in a black thermoplastic

H0A1404

Abstract: HOA1404
Contextual Info: H0A1404 Reflective Sensor DESCRIPTION The HOA1404 series consists of an infrared emitting diode and an NPN silicon phototransistor HOA1404-001 ,-002 or photodarlington (HOA1404-003), encased side-by-side on converging optical axes, in a black thermoplastic housing. The

HOA14

Contextual Info: HOA1404 Reflective Sensor DESCRIPTION The HOA14C4 series consists of an infrared emitting diode and an NPN silicon phototransistor HOA1404-001 ,-002 or photodarlington (HOA1404-003), encased side-by-side on converging optical axes, in a black thermoplastic housing. The

HOA2498

Contextual Info: HOA2498 Reflective Sensor , FEATURES • Choiceol phoblransislor or pholodarlingtn output ' / / ' Wide opera ling temperature range - 55'C lo-MOO'C DESCRIPTION The HOA2498 secies oons&ls ol an inFrared emitting diode -and an NPN silicon phototransislor (H0A24B&- 001, - 002) or photodarington

Zener Diode, NC4V7

Abstract: NC6V8 diode g25 NC10 NC11 NC12 NC13 NC15 NC16 NC18
Contextual Info: ELECTRICAL CHARACTERISTICS b DIODE ELECTRICAL CHARACTERISTICS ZENER DIODES Reference Voltage (Vz) Norn. Min. Max. @ lz Differential Resistance Rz @ lz Temperature Coefficient Sz @ h Dice Type Reverse Current lR @ VR Geometry mA V V V mA Q mA % °c mA ND2V7

br 123 s

Abstract: BAS54A BR3005 MS15N50 sod-23 BAS54C
Contextual Info: Bruckewell Technology Corp., Ltd. Your Best Partner Discrete Semiconductor Product Catalogue 2015 version Diode/ Rectifier MOSFET TVS/ ESD Protector Comp pany Profile P e Bru uckewell teechnology corp. c registe ered in Dela aware, USA A and total capital

SE1470

Abstract: SE1470-002L
Contextual Info: SE1470 AIGaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range (-55°C to +125C)

Contextual Info: HOA2498 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Focused for maximum response • Wide operating temperature range -55°C to+100°C DESCRIPTION The HOA2490 series consists of an infrared emitting diode and an NPN silicon phototransistor

all Metal Detector

Abstract: HQA2862-003 ic for metal detector hoa2862
Contextual Info: HOA2862 Transmissive Sensor D ESCRIPTIO N The HOA2862 series consists of an infrared emitting diode facing an N PN silicon phototransistor HOA2862-001, -002 or photodarlington (HOA2862-003) encased in a black thermoplastic housing. Detector switching takes place whenever an

sd144

Abstract: reflective sensor
Contextual Info: HOA1404 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Focused for maximum response • Wide operating temperature range -55°C to +100°C DESCRIPTION The HOA1404 series consists of an infrared emitting diode and an NPN silicon phototransistor

Contextual Info: HOA2498 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Focused for maximum response • Wide operating temperature range {-55°C to +100°C DESCRIPTION The HOA2498 series consists of an infrared emitting diode and an NPN silicon phototransistor