DIODE SCHOTTKY 29 Search Results

diode cross reference

Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE

onsemi 035 Schottky diode

Abstract: diode Marking code t5
Contextual Info: NTGD3147F Power MOSFET and Schottky Diode −20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 Features • • • • • • Fast Switching Low Gate Change Low RDS on Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility

Contextual Info: P D - 917 0 5 International l R Rectifier IRF7322D1 PRELIMINARY FETKY MOSFET/ Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low V F Schottky Rectifier Generation 5 Technology

WLCSP-26 3d

Contextual Info: FDZ3N513ZT Integrated NMOS and Schottky Diode Features General Description ̈ Monolithic NMOS and Schottky Diode The FDZ3N513ZT is a monolithic NMOS/ Schottky combination FETky and is designed and wired to function as a discontinuous conduction mode (DCM) boost LED power train for mobile

4884n

Contextual Info: NTMD4884NF Power MOSFET and Schottky Diode 30 V, 5.7 A, Single N-Channel with 30 V, 2.8 A, Schottky Barrier Diode Features •ăFETKYt Surface Mount Package Saves Board Space •ăIndependent Pin-Out for MOSFET and Schottky Allowing for Design Flexibility

4245

Abstract: SMD M1B BAT56 SMD M1B diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAT56 Schottky barrier diode Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Preliminary specification Schottky barrier diode FEATURES • Low leakage current

IRF7326D2

Abstract: IRF7101
Contextual Info: PD - 93763 IRF7326D2 FETKY MOSFET / Schottky Diode ● ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint 1 8 K

IRF7101

Abstract: IRF7326D2
Contextual Info: PD - 93763 IRF7326D2 FETKY MOSFET / Schottky Diode ● ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint 1 8 K

ed 77A DIODE

Abstract: IRF7322D1
Contextual Info: PD- 91705A IRF7322D1 FETKY MOSFET / Schottky Diode ● ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint 1 8 K

1PS74SB43

Abstract: MARKING OK
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 1PS74SB43 Schottky barrier diode Product specification 1999 Dec 10 Philips Semiconductors Product specification Schottky barrier diode FEATURES 1PS74SB43 PINNING • Ultra fast switching speed PIN DESCRIPTION

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB30 Schottky barrier diode Product specification 2001 Feb 20 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB30 FEATURES PINNING • Very low forward voltage PIN • Very low reverse current

UHF/VHF

Abstract: mavr20
Contextual Info: 5082-2900 SCHOTTKY BARRIER DIODE PACKAGE STYLE 15 DESCRIPTION: The ASI 5082-2900 is a Silicon Small Signal Schottky Diode for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. MAXIMUM RATINGS IF 35 mA VR 20 V PDISS 100 mW @ TA = 25 °C

MARKING CODE 21

Abstract: 1PS59SB21
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D114 1PS59SB21 Schottky barrier diode Product specification Supersedes data of 1998 Jul 28 1999 May 05 Philips Semiconductors Product specification Schottky barrier diode 1PS59SB21 FEATURES DESCRIPTION • Ultra fast switching speed

1PS76SB21

Abstract: "MARKING CODE S1" smd schottky diode marking 72 sod323 diode marking code 74
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D049 1PS76SB21 Schottky barrier diode Product specification Supersedes data of 1998 Jul 16 1999 May 05 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB21 FEATURES DESCRIPTION • Ultra fast switching speed

1PS75SB45

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 1PS75SB45 Schottky barrier double diode Product specification Supersedes data of 1997 Nov 07 1999 Apr 26 Philips Semiconductors Product specification Schottky barrier double diode 1PS75SB45 FEATURES DESCRIPTION • Low forward voltage

PHILIPS CD 245

Abstract: PMEG2005EB "MARKING CODE L5" code L5 smd marking l5
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PMEG2005EB Low VF MEGA Schottky barrier diode Product specification Supersedes data of 2003 Feb 20 2003 Apr 04 Philips Semiconductors Product specification Low VF MEGA Schottky barrier diode FEATURES PMEG2005EB PINNING

smd schottky diode marking s4

Abstract: smd schottky diode s4 33 smd schottky diode s4 48 S4 DIODE schottky smd schottky diode s4 S4 69 DIODE schottky S4 44 DIODE schottky "MARKING CODE S4" smd schottky diode marking 72 smd schottky diode s4 21
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D049 1PS76SB40 Schottky barrier diode Product specification Supersedes data of 1998 Jul 16 1999 Apr 26 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB40 FEATURES DESCRIPTION • Low forward voltage

IRF7521D1

Abstract: 9164
Contextual Info: PD-91646C IRF7521D1 PRELIMINARY FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint A A S G 1 8 K 2 7 K 3 6 4 5 VDSS = 20V

CBTS3253PW

Abstract: JESD22-A114 JESD22-A115 JESD78 CBTS3253 CBTS3253D CBTS3253DB CBTS3253DS CS3253 2b3 diode
Contextual Info: INTEGRATED CIRCUITS CBTS3253 Dual 1-of-4 FET multiplexer/demultiplexer with Schottky diode clamping Product data Philips Semiconductors 2002 Nov 06 Philips Semiconductors Product data Dual 1-of-4 FET multiplexer/demultiplexer with Schottky diode clamping FEATURES

E3p1

Contextual Info: NTMSD3P102R2 FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package Features •ăHigh Efficiency Components in a Single SO-8 Package •ăHigh Density Power MOSFET with Low RDS on , Schottky Diode with Low VF •ăIndependent Pin-Outs for MOSFET and Schottky Die

IRF7524D1

Abstract: IR IL 070 503 11 02 HEXFET SO-8
Contextual Info: PD -91648C IRF7524D1 PRELIMINARY FETKYTM MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint A A S G 1 8 K 2 7 K 3 6 4 5 D VDSS = -20V

10FWJ2C

Abstract: 10FWJ2C48M U10FWJ2C48M TOSHIBA RECTIFIER
Contextual Info: 10FWJ2C48M,U10FWJ2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 10FWJ2C48M,U10FWJ2C48M LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Peak Forward Voltage : VFM≤0.47V

10FWJ2C

Abstract: 10FWJ2C48M U10FWJ2C48M
Contextual Info: 10FWJ2C48M,U10FWJ2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 10FWJ2C48M,U10FWJ2C48M LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Peak Forward Voltage : VFM≤0.47V

SCHOTTKY DIODE SOT-143

Abstract: 040P
Contextual Info: Silicon Schottky Diode Ring Quad Chips MA4E2062 Series MA4E2062 Series Preliminary Specifications Silicon Schottky Diode Ring Quards Features • • • • • • • Package Outlines Small Size Designed for High Volume, Low Cost Closely Matched Junctions