DIODE S3M Search Results

Contextual Info: S3A . S3M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter /4 Surface mount diode Standard silicon rectifier diodes S3A.S3M  4

RB160-40

Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Contextual Info: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148

2510W

Abstract: RS1M diode
Contextual Info: Email: info@kingtronics.com Web: www.kingtronics.com Tel: +86 769 81188110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Bridge Rectifier List UL ISO Manufacturer since 1990 Diode Recitifer M7 DO-214AC (1A 1000V)SMA Bridge Rectifier ABS2-ABS6; ABS8; ABS10

WTE DIODE S3M

Abstract: S3J marking DIODE
Contextual Info: S3A – S3M WTE POWER SEMICONDUCTORS Pb 3.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 100A Peak Low Power Loss

Contextual Info: S3AB – S3MB WTE POWER SEMICONDUCTORS Pb 3.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 100A Peak Low Power Loss

diode s3m

Contextual Info: S3A – S3M 3.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction       Ideally Suited for Automatic Assembly Low Forward Voltage Drop Surge Overload Rating to 100A Peak

Contextual Info: S3AB – S3MB 3.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction       Ideally Suited for Automatic Assembly Low Forward Voltage Drop Surge Overload Rating to 100A Peak

Contextual Info: S3AB – S3MB WTE POWER SEMICONDUCTORS Pb 3.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features  Glass Passivated Die Construction       Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 100A Peak Low Power Loss

Contextual Info: S3A – S3M WTE POWER SEMICONDUCTORS Pb 3.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features  Glass Passivated Die Construction       Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 100A Peak Low Power Loss

DI108S

Abstract: SK5100 CP2506 sb5200 SB840
Contextual Info: Diode & Rectifiers Diode & Rectifiers MERITEK RoHS TABLE OF CONTENT • PLASTIC PASSIVATED JUNCTION RECTIFIER o General Purpose

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

1SS81

Contextual Info: 1SS81-Silicon Epitaxial Planar Diode for High Voltage Switching Features Outline • High reverse voltage. VR=150V • High reliability with glass seal. o 1 1- — ] f -f - — 1 1 .1 1 1 Ordering Information

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

SMD MARKING CODE s4

Abstract: BBY62 sot143 TOP marking 16 "MARKING CODE S4" device marking code S4 S4 SMD Marking Code smd diode code S4 SOT143 package
Contextual Info: Philips Semiconductors Product specification UHF variable capacitance double diode BBY62 FEATURES • Excellent linearity • Small plastic SMD package • C28:1.9 pF; ratio: 8.3. 4 3 4 3 ÆD APPLICATIONS • Electronic tuning in UHF television tuners • vco.

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

FE16B

Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —

DIODE SOT-23 PACKAGE

Abstract: dbs107 mmbd2836 Bridge rectifier DF08 s1g 28 diode BAS21 DL4148 LL4148 LL4448 MMBD1402
Contextual Info: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package

BBY62

Abstract: "MARKING CODE S4"
Contextual Info: Philips Semiconductors Product specification UHF variable capacitance double diode BBY62 FEATURES • Excellent linearity • Small plastic SMD package • C28:1.9 pF; ratio: 8.3. 4 3 4 APPLICATIONS 3 ÉÉ • Electronic tuning in UHF television tuners • VCO.

MBR130T1

Abstract: MBR130T1G MBR130T3 MBR130T3G
Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR130T1

Abstract: MBR130T1G MBR130T3 MBR130T3G S3M-G
Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR130T1

Abstract: MBR130T1G MBR130T3 MBR130T3G
Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Diode marking CODE 5M SOD

Abstract: SOD-123 marking code A1 MBR130T1G Diode SOd-123 marking cu 5M MARKING CODE SCHOTTKY DIODE marking code EE sod-123 marking code DV MBR130T1 MBR130T3 MBR130T3G
Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

PK MUR 460

Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

transistor 1fp

Abstract: 52ga 414n 53m diode
Contextual Info: HÌLS1S1M/S2M/53M MINI MOLD TYPE PHOTO COUPLER • OUTLINE typ. ■ GENERAL DESCRIPTION The NJL5151M series are small package dual-in-line photo couplers, which consist of high power infrared emitting diode and high sensitve Si photo transistor. IL standards (File N o.E8256I)