DIODE S2J Search Results

RB160-40

Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Contextual Info: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148

DI108S

Abstract: SK5100 CP2506 sb5200 SB840
Contextual Info: Diode & Rectifiers Diode & Rectifiers MERITEK RoHS TABLE OF CONTENT • PLASTIC PASSIVATED JUNCTION RECTIFIER o General Purpose

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

S2M diode

Abstract: diode s2m S2A diode
Contextual Info: S2A – S2M WTE POWER SEMICONDUCTORS Pb 2.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 60A Peak Low Power Loss

S2GAT

Contextual Info: S2AA – S2MA WTE POWER SEMICONDUCTORS Pb 2.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 60A Peak Low Power Loss

Contextual Info: S2A THRU S2M SURFACE MOUNT RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes FEATURES SMB/DO-214AA l For surface mounted applications l High temperature metallurgically bonded-no compression contacts as found in other l diode-constructed rectifiers

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

FE16B

Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —

DIODE SOT-23 PACKAGE

Abstract: dbs107 mmbd2836 Bridge rectifier DF08 s1g 28 diode BAS21 DL4148 LL4148 LL4448 MMBD1402
Contextual Info: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package

Contextual Info: S2A THRU S2M TRANSYS SURFACE MOUNT RECTIFIER ELECTRONICS VOLTAGE - 50 to 1000 Volts LIMITED FEATURES CURRENT - 2.0 Amperes SMB/DO-214AA For surface mounted applications High temperature meta urgica y bonded-no compression contacts as found in other diode-constructed rectifiers

1100C

Abstract: 2600C
Contextual Info: S2A thru S2M SERIES CHENG- YI SURFACE MOUNT RECTIFIER ELECTRONIC VOLTAGE RANGE 50 TO 1000 Volts CURRENT 2.0 Amperes SMB/DO-214AA FEATURES For surface mounted applications High tempreature metallurgically bonded-no compression contacts as found in other diode-constructed rectifiers

Contextual Info: S2A – S2M 2.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction       Ideally Suited for Automatic Assembly Low Forward Voltage Drop Surge Overload Rating to 60A Peak

Contextual Info: S2AA – S2MA 2.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction       Ideally Suited for Automatic Assembly Low Forward Voltage Drop Surge Overload Rating to 60A Peak

Contextual Info: S2AA – S2MA WTE POWER SEMICONDUCTORS Pb 2.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features  Glass Passivated Die Construction       Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 60A Peak Low Power Loss

Contextual Info: S2A – S2M WTE POWER SEMICONDUCTORS Pb 2.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features  Glass Passivated Die Construction       Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 60A Peak Low Power Loss

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

equivalent components of diode 1N5399

Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

transistor 2N5952

Abstract: transistor KSP44 bc558 zener diode reference guide 1n967b schottky 1n5248 KBL BRIDGE RECTIFIER 005 FYPF2004DN BAV99Wt1g BC337
Contextual Info: Small Signal Transistors & Diodes Selection Guide Fairchild Semiconductor, a long-time, leading global supplier of high performance semiconductors, offers a broad range of small signal transistor and diode products—from JFETs, Schottky, and rectifiers, to RF transistors, TRIACs and more. You will not only find the performance that you want, you will also

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

Contextual Info: S2A-M3, S2B-M3, S2D-M3, S2G-M3, S2J-M3, S2K-M3, S2M-M3 www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop

diode s2m

Contextual Info: S2A, S2B, S2D, S2G, S2J, S2K, S2M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current

Contextual Info: S2A-M3, S2B-M3, S2D-M3, S2G-M3, S2J-M3, S2K-M3, S2M-M3 www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated pallet chip junction • Low forward voltage drop

Contextual Info: S2A, S2B, S2D, S2G, S2J, S2K, S2M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • • • • • • • Low profile package Ideal for automated placement Glass passivated chip junction Low forward voltage drop