DIODE S2B Search Results

Contextual Info: PoE Ideal Diode Bridge PoE Data Pairs ±VIN1 EN + VOUT LT4321 – EN To PoE PD Controller PoE Spare ±VIN2 Pairs Active Diode Bridge Controller Minimizes Power Loss and Heat in Power over Ethernet Powered Device The LT 4321 ideal diode bridge controller replaces two diode bridge rectifiers with low loss N-channel MOSFET bridges to increase

RB160-40

Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Contextual Info: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148

MI303

Abstract: 1773M 4B2 diode 7L03 db 411 antenna
Contextual Info: bSMTöES 0017732 LTT • ANTENNA SWITCH MI303 PIN DIODE R F POW ER SWITCHING DESCRIPTION The MI303 PIN diode is employing high reliability glass construction, designed for solid state antenna switches in commercial two-way radios. FEA TU RES • Low insertion loss

4321F

Abstract: TG12 LT432
Contextual Info: LT4321 PoE Ideal Diode Bridge Controller Features Description n n n The LT 4321 is a dual ideal diode bridge controller that enables a Power over Ethernet PoE powered device (PD) to receive power in either voltage polarity from RJ-45 data pairs, spare pairs, or both. The LT4321 and

DI108S

Abstract: SK5100 CP2506 sb5200 SB840
Contextual Info: Diode & Rectifiers Diode & Rectifiers MERITEK RoHS TABLE OF CONTENT • PLASTIC PASSIVATED JUNCTION RECTIFIER o General Purpose

Contextual Info: 4bêfc>S2b OOOlbfi^ AMO H I X Y nixYs If i i 700 900 1300 1500 1700 > > > < < < Thyristor Modules Thyristor/Diode Modules 600 800 1200 1400 1600 MCC250 iTAV= 2 x 287 a MCD250 VRRM= 600-1600 V T ype Version 1 Version 1 M CC250*06io1 M CC250-08ÌO1 MCC2S0-121O1

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

S2M diode

Abstract: diode s2m S2A diode
Contextual Info: S2A – S2M WTE POWER SEMICONDUCTORS Pb 2.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 60A Peak Low Power Loss

S2GAT

Contextual Info: S2AA – S2MA WTE POWER SEMICONDUCTORS Pb 2.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 60A Peak Low Power Loss

Contextual Info: S2A THRU S2M SURFACE MOUNT RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes FEATURES SMB/DO-214AA l For surface mounted applications l High temperature metallurgically bonded-no compression contacts as found in other l diode-constructed rectifiers

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

FE16B

Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —

DIODE SOT-23 PACKAGE

Abstract: dbs107 mmbd2836 Bridge rectifier DF08 s1g 28 diode BAS21 DL4148 LL4148 LL4448 MMBD1402
Contextual Info: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package

1100C

Abstract: 2600C
Contextual Info: S2A thru S2M SERIES CHENG- YI SURFACE MOUNT RECTIFIER ELECTRONIC VOLTAGE RANGE 50 TO 1000 Volts CURRENT 2.0 Amperes SMB/DO-214AA FEATURES For surface mounted applications High tempreature metallurgically bonded-no compression contacts as found in other diode-constructed rectifiers

AN7254

Abstract: AN7260 ITF86116SQT ITF86116SQT2 TB370
Contextual Info: ITF86116SQT Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 5 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models

Contextual Info: S2A – S2M 2.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction       Ideally Suited for Automatic Assembly Low Forward Voltage Drop Surge Overload Rating to 60A Peak

Contextual Info: S2AA – S2MA 2.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction       Ideally Suited for Automatic Assembly Low Forward Voltage Drop Surge Overload Rating to 60A Peak

IRF540N

Abstract: MOSFET IRF540n huf76639p3 HRF3205 equivalent HUF75623P3 ITF87056DQT huf75339 RF1K49093 HRF3205 HRFZ44N
Contextual Info: Power MOSFET SPICE and Thermal Models TM Features • • • • • • • Sub Circuit Approach Full Operating Temperature Range Accurate Gate Charge Modeling BVDSS Modeling at Low and High Currents Package Inductances Gate Source Resistance Third Quadrant Diode Operation

Contextual Info: ITF86116SQT TM Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.3 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode

UJT 2N2646

Abstract: 2N2646 pin diagram UJT-2N2646 PIN DIAGRAM DETAILS UJT pin diagram 2N2646 pin diagram of UJT-2N2646 GE Transient Voltage Suppression Manual UJT THEORY AND CHARACTERISTICS 957B MDA2500 pn junction DIODE 1N4001
Contextual Info: TVS/Zener Theory and Design Considerations Handbook HBD854/D Rev. 0, Jun−2005 SCILLC, 2005 Previous Edition © 2001 as Excerpted from DL150/D “All Rights Reserved’’ http://onsemi.com 1 Technical Information, Application Notes and Articles Zener Diode Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

AN7254

Abstract: AN7260 ITF86116SQT ITF86116SQT2 TB370 MO-153AA
Contextual Info: ITF86116SQT Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.3 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models

AN7254

Abstract: AN7260 ITF86116SQT ITF86116SQT2 TB370 86116
Contextual Info: ITF86116SQT Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.2 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models

PK MUR 460

Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,