DIODE S1B Search Results

Contextual Info: PIN DIODE MODULES PIN diode switches - SPST SPST Electrical characteristics @ 25° C Model Direct Reverse Bias Bias S1B502 SRB502 S1D502 SRD502 S1B2004 SRB2004 S1D2004 SRD2004 S1B4008 SRB4008 S1D4008 SRD4008 Bias requirements: Direct bias: Frequency range

RB160-40

Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Contextual Info: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148

Contextual Info: LTC4359 Ideal Diode Controller with Reverse Input Protection FEATURES n n n n n n n DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode Wide Operating Voltage Range: 4V to 80V Reverse Input Protection to – 40V Low 9µA Shutdown current

s2e diode

Abstract: BH204 DIODE S2E
Contextual Info: PIN DIODE MODULES PIN diode switches - High Power SP3T HIGH POWER SP3T Electrical characteristics @ 25° C Characteristics at 25°C Frequency range Test conditions N/A Type Case 1 SH92103 SH93103 BH204 BH204 Loss Isolation Input power L I Pin 400 MHz 200 MHz

FDS3732

Abstract: 3b transistor
Contextual Info: LTC4359 Ideal Diode Controller with Reverse Input Protection FEATURES DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown Current n Low 150 A Operating Current

LTC4359CMS8

Contextual Info: LTC4359 Ideal Diode Controller with Reverse Input Protection Features Description Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown Current n Low 150 A Operating Current

IN751a

Abstract: 3b transistor IN759A LTC4363 IN751 FDS3732 solar voltage regulator 24v 48v 150A mosfet switch BSC011N03LS block diagram 12V solar charge controller
Contextual Info: LTC4359 Ideal Diode Controller with Reverse Input Protection Features Description Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown current n Low 150 A Operating Current

GE-SPCO Statte rower component Malvern

Abstract: ge 142 6rt2 A880 6rt217
Contextual Info: S3E D GE-SPCO • 3Ö7MSÖM GGOGIMS ^ 7 ^ « Û E S P A880 Statte row er Component tm eràtion M aívenuPA USA 'V- of-Z.3 77mm RECTIFIER DIODE 4500 V L2900A- The A880 rectifier diode features a nominal 77mm silicon junction diameter design, manufactured by

DIODE S4 29

Contextual Info: £•< K/Diodes J [ — K i^p p + S ^p p —R i l / L i s t of Diode E quivalent Products f f ^ t t i ; o t ' T £ ± l C - S S L T i ' & ' i ' i I £ 4 ' £ U ST<T>?\ <£< <r'{iJ5CQ±, c?i'„ The characteristics of the equivalent products do not always agree with those of the diode products. Therefore, be

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

S1m diode

Abstract: diode s1m Taiwan SemiConductor S1M diode S1J s1m taiwan semiconductor S1J Diode S1A-35 s1m4
Contextual Info: S1A – S1M WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Power Loss

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

FE16B

Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —

1000C

Abstract: 2600C
Contextual Info: S1A thru S1M SERIES CHENG- YI SURFACE MOUNT RECTIFIER ELECTRONIC VOLTAGE RANGE 50 TO 1000 Volts CURRENT 1.0 Amperes SMB/DO-214AA FEATURES For surface mounted applications High tempreature metallurgically bonded-no compression contacts as found in other diode-constructed rectifiers

AN7254

Abstract: AN7260 ITF86116SQT ITF86116SQT2 TB370
Contextual Info: ITF86116SQT Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 5 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models

IRF540N

Abstract: MOSFET IRF540n huf76639p3 HRF3205 equivalent HUF75623P3 ITF87056DQT huf75339 RF1K49093 HRF3205 HRFZ44N
Contextual Info: Power MOSFET SPICE and Thermal Models TM Features • • • • • • • Sub Circuit Approach Full Operating Temperature Range Accurate Gate Charge Modeling BVDSS Modeling at Low and High Currents Package Inductances Gate Source Resistance Third Quadrant Diode Operation

Contextual Info: S1A – S1M 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction       Ideally Suited for Automatic Assembly Low Forward Voltage Drop Surge Overload Rating to 60A Peak

Contextual Info: ITF86116SQT TM Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.3 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode

Contextual Info: S1A THRU S1M SURFACE MOUNT RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES l l l l l l l SMB/DO-214AA For surface mounted applications High temperature metallurgically bonded-no compression contacts as found in other diode-constructed rectifiers

S1m diode

Abstract: JEDEC DO-214AA 100 Amp current 1000 volt diode diode S1G diode s1g sma DO-214AA diode JEDEC DO-214AA diode
Contextual Info: S1A THRU S1M SURFACE MOUNT RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES SMA/DO-214AA l For surface mounted applications l High temperature metallurgically bonded-no compression contacts as found in other diode-constructed rectifiers l Glass passivated junction

AN7254

Abstract: AN7260 ITF86116SQT ITF86116SQT2 TB370 MO-153AA
Contextual Info: ITF86116SQT Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.3 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models

S1m diode

Contextual Info: S1A – S1M WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features  Glass Passivated Die Construction       Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Power Loss

AN7254

Abstract: AN7260 ITF86116SQT ITF86116SQT2 TB370 86116
Contextual Info: ITF86116SQT Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.2 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models