DIODE S 360 Search Results

NX5304

Abstract: NX5306 NX6306 NX6306GH NX6306GK NX6306SH NX6306SK inGaAs
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor

Contextual Info: i / 3 y h * - JVJT S H 'Î-K —K ïS'n.—JU Diode Module Schottky Barrier Diode OUTLINE DIMENSIONS D360SC6M 60V 360A l> US V f ► s jc ô '/ jv ^ u > *§ k S R S Ü »DC/DC H C x T .^ Ü f ê É I l f i : « * r s t f i < f i ÿ v>) RATINGS a Item s Absolute Maximum Ratings

Contextual Info: Si G E C P L E S S E Y NOVEMBERS SEM IC OND UCT OR S DS4180-4.0 DNB64 RECTIFIER DIODE APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. KEY PARAMETERS V RRM 3600V 2530A 'fs m 27000A I F a v , ■ Welding. ■ Battery Chargers.

Contextual Info: v a y Schottky Barrier Diode Diode Module â D360SC4M OUTLINE DIMENSIONS C a s e : M odules 40V 360A B a a • * s i tyi-jb • ê V f • * S S R B S •D C /D C D V A ’- ÿ • I C x X S 1- • Æ tè ü RATINGS • Î ë fc H t^ A È fë m Absolute Maximum Ratings

Contextual Info: y3y h * A ' U K K iv a - J I/ Schottky Barrier Diode Diode Module OUTLINE DIMENSIONS D360SC7M Case : Modules 70V 360A • ^ s a ty a - jL / • ffiVF • e jc w s u •* S R S S •D C /D C • I C x T . Î '- RATINGS • Îë ftlI^ Ü Ë fë m A bso lu te M axim um Ratings

Contextual Info: S i GEC P L E S S E Y augustes SE M IC OND UC TOR S DS4168-2.3 DS1107SG RECTIFIER DIODE KEY PARAMETERS VRRM 4000V lF AV, 870A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers.

Contextual Info: DATA SHEET LASER DIODE NX6301 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6301 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This NX6301S Series

hz nec

Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8503BG-CC NX8503CG-CC 10 gb laser diode
Contextual Info: DATA SHEET LASER DIODE NX8503BG-CC,NX8503CG-CC 1 550 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 156 Mb/s, 622 Mb/s DESCRIPTION The NX8503BG-CC and NX8503CG-CC are 1 550 nm Multiple Quantum Well MQW structured Distributed FeedBack (DFB) laser diode coaxial modules with single mode fiber.

NX7300BA-CC

Abstract: NX7300CH-CC NX7301BA-CC NX7301CH-CC NX7302BA-CC STM-16 10 gb laser diode nec 2502 4 pin
Contextual Info: DATA SHEET LASER DIODE NX7301BA-CC,NX7301CH-CC 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR 156 Mb/s, 622 Mb/s DESCRIPTION The NX7301BA-CC and NX7301CH-CC are 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode coaxial modules with single mode fiber.

NX7300BA-CC

Abstract: NX7300CH-CC NX7301BA-CC NX7301CA-CC NX7302BA-CC STM-16
Contextual Info: DATA SHEET LASER DIODE NX7301BA-CC,NX7301CA-CC 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR 156 Mb/s, 622 Mb/s DESCRIPTION The NX7301BA-CC and NX7301CA-CC are 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode coaxial modules with single mode fiber.

Contextual Info: Twin Diode Diode Module O U T L IN E D IM E N S IO N S D30VCD 600V 30A • Ë te ft RATING S Absolute Maximum Ratings IS s Item « » a * Storag» Temperatur« Operating Junction Temperature -ö-AäSiS'SfE Maximum Reverse Voltage a * « * Average R ectified Forward Current

Contextual Info: î / a y h * - A'UT7S H 'Î-K —KïS'n.—Jb Diode Module Schottky Barrier Diode OUTLINE DIMENSIONS D360SC4M 40V 360A l> US V f ► sjcô '/jv^u > *§ kS R S Ü »DC/DC H C x T .^ ÜfêÉIlfi:«* r s tfi< f i ÿ v>) RATINGS Absolute Maximum Ratings a Item

NX5501

Abstract: NX5304 NX5306 NX5307 NX6509 NX6509GH NX6509GK STM-16
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6509 Series 1 550 nm FOR 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6509 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are designed for 2.5 Gb/s: STM-16 (L-16.2) application and

Contextual Info: S i GEC PLESSEY augustes SEMI CO NDUC TOR S DS4182-3.3 DS2106SY RECTIFIER DIODE APPLICATIONS KEY PARAMETERS 4000V If,av, 2850A IpsM 62500A VRRM • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers.

Contextual Info: V 3 7 h* 4 r M U T7 # * fs j" — K Schottky Barrier Diode Sf-l1:+— K ï ÿ i - J l / Diode Module OUTLINE DIMENSIONS D360SC6M C a s e : M odules 60V 360A © © 4 |i • f f iV F • e jc iw s u • * S R B ü • D C /D C Z i y H - 9 • IC x T .^ -

Contextual Info: GEC P L E S S E Y w S E M I C O N D U C T O R ja n u a r y im t S DS4181 -3.1 DS1112SG RECTIFIER DIODE APPLICATIONS • KEY PARAMETERS V RRM Rectification. ■ lp Av, Freewheel Diode. 630V »PS« ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers.

GR-468-CORE

Abstract: NX7312UA NX7313UA NX7314UA TOSA
Contextual Info: DATA SHEET LASER DIODE NX7312UA 1 310 nm FOR SHORT HAUL 156 Mb/s AND 622 Mb/s InGaAsP MQW-FP LASER DIODE TOSA DESCRIPTION The NX7312UA is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode TOSA (transmitter optical sub-assembly) with InGaAs monitor PIN-PD in a receptacle type package designed for SFF/SFP

Contextual Info: y a 7 K Schottky Barrier Diode ÿ ' - f i — K i v u — vu Diode Module OUTLINE DIMENSIONS D360SC5M Case : Modules 50V 360A ia a •S V f • * S JS R » S •D C /D C • IC x T .^ - Mfcfèm RATINGS •ifeë&tJI^/Ëfë Absolute Maximum Ratings « Item Storage Temperature

nec. 5.5 473

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.

NX5501

Abstract: NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 NX6508 STM-16
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.

Contextual Info: an GEC P L E S S E Y SEPTEMBER 1996 SEMICONDUCTORS DS4175-1.2 DNB65 RECTIFIER DIODE KEY PARAMETERS VRRM 4500V ' f <a v , 2000A Ifsm 31000A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers.

10 gb laser diode

Abstract: NX8566LE NX8560MC Series bfy 421
Contextual Info: DATA SHEET LASER DIODE NX8564/8565/8566LE Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 360 km, 600 km, 240 km APPLICATIONS DESCRIPTION The NX8564/8565/8566LE Series is an Electro-Absorption EA modulator

Contextual Info: DATA SHEET LASER DIODE NX8564/8565/8566LE Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 360 km, 600 km, 240 km APPLICATIONS DESCRIPTION The NX8564/8565/8566LE Series is an Electro-Absorption EA modulator

STM 125

Contextual Info: DATA SHEET LASER DIODE NX5306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5306 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Gigabit Ethernet and Synchronous Digital Hierarchy