DIODE S 360 Search Results

NX5304

Abstract: NX5306 NX6306 NX6306GH NX6306GK NX6306SH NX6306SK inGaAs
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor

Contextual Info: i / 3 y h * - JVJT S H 'Î-K —K ïS'n.—JU Diode Module Schottky Barrier Diode OUTLINE DIMENSIONS D360SC6M 60V 360A l> US V f ► s jc ô '/ jv ^ u > *§ k S R S Ü »DC/DC H C x T .^ Ü f ê É I l f i : « * r s t f i < f i ÿ v>) RATINGS a Item s Absolute Maximum Ratings

Contextual Info: Si G E C P L E S S E Y NOVEMBERS SEM IC OND UCT OR S DS4180-4.0 DNB64 RECTIFIER DIODE APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. KEY PARAMETERS V RRM 3600V 2530A 'fs m 27000A I F a v , ■ Welding. ■ Battery Chargers.

hz nec

Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8503BG-CC NX8503CG-CC 10 gb laser diode
Contextual Info: DATA SHEET LASER DIODE NX8503BG-CC,NX8503CG-CC 1 550 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 156 Mb/s, 622 Mb/s DESCRIPTION The NX8503BG-CC and NX8503CG-CC are 1 550 nm Multiple Quantum Well MQW structured Distributed FeedBack (DFB) laser diode coaxial modules with single mode fiber.

Contextual Info: î / a y h * - A'UT7S H 'Î-K —KïS'n.—Jb Diode Module Schottky Barrier Diode OUTLINE DIMENSIONS D360SC4M 40V 360A l> US V f ► sjcô '/jv^u > *§ kS R S Ü »DC/DC H C x T .^ ÜfêÉIlfi:«* r s tfi< f i ÿ v>) RATINGS Absolute Maximum Ratings a Item

10 gb laser diode

Abstract: NX8566LE NX8560MC Series bfy 421
Contextual Info: DATA SHEET LASER DIODE NX8564/8565/8566LE Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 360 km, 600 km, 240 km APPLICATIONS DESCRIPTION The NX8564/8565/8566LE Series is an Electro-Absorption EA modulator

NX8567SA

Abstract: NX8560MC Series NX8560LJ NX8560MC NX8560MCS NX8560SJ NX8567SAM NX8567SAS 4 channel mini filter DWDM
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8567SA Series EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 240 km, 360 km, 600 km APPLICATIONS DESCRIPTION The NX8567SA Series is an Electro-Absorption EA modulator and

NX7300BA-CC

Abstract: NX7300CH-CC NX7301BA-CC NX7301CA-CC NX7302BA-CC NX7302CA-CC STM-16
Contextual Info: DATA SHEET LASER DIODE NX7302BA-CC,NX7302CA-CC 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR 622 Mb/s DESCRIPTION The NX7302BA-CC and NX7302CA-CC are 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode coaxial modules with single mode fiber.

NX7300BA-CC

Abstract: NX7300CH-CC NX7301BA-CC NX7301CH-CC NX7303BA-CC NX7303CH-CC STM-16
Contextual Info: DATA SHEET LASER DIODE NX7303BA-CC,NX7303CH-CC 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR 156 Mb/s DESCRIPTION The NX7303BA-CC and NX7303CH-CC are 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode coaxial modules with single mode fiber.

TOSA MQW Laser diode SFP

Abstract: TOSA PX10160E TOSA for SFP NX7312UA-AZ NX7313UA-AZ NX7314UA-AZ NX7315UA-AZ NX8311UD NX8311UD-AZ
Contextual Info: LASER DIODE NX8311UD 1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8311UD is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package

Contextual Info: n - n x V 'C X - Y Super Fast Recovery Diode Axial Diode O U T L IN E D IM E N S IO N S D1NF60 Unit • mm Package I AX057 S 600V 0.8A hLO lid 2 0 m in • i& M X I 4 2.6± 2 0 m in ±0.1 • t r r 400 ns • 5 m m \d " j a i- m -N - tt S roianty •S R S ÎÜ

Contextual Info: Schottky Barrier Diode Twin Diode m w m OUTLINE DF30SC4M 40V 30A Feature • SMD • SMD • P rrsm7 K 5 V v i S ’ Œ • P rrsm Rating • High lo Rating'Small-PKG Main Use • DC/DC n y jt — p • m m .r-k .o A m s s • is m .tf- fz r ju m g • •

TOSA MQW Laser diode SFP

Abstract: NEC TOSA TOSA TOSA for SFP NX7312UA NX7313UA NX7314UA NX8310UA NX8312UD STM-16
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8312UD 1 310 nm FOR SHORT HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8312UD is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical sub-assembly) with InGaAs monitor PIN-PD in a receptacle type package designed for

10 gb laser diode

Abstract: NX8560LJ NX8560MC NX8560MC-BC NX8560MC-CC NX8560MCS NX8560MCS-BC NX8560MCS-CC NX8560SJ stm 64 laser diode
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8560MC Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE WITH DRIVER FOR 10 Gb/s APPLICATIONS DESCRIPTION The NX8560MC Series is an Electro-Absorption EA modulator integrated, 1 550 nm Multiple Quantum Well (MQW) structured Distributed

Si3853DV

Contextual Info: Si3853DV New Product Vishay Siliconix P-Channel 20-V D-S MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.200 @ VGS = –4.5 V "1.8 0.340 @ VGS = –2.5 V "1.3 SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (v) Diode Forward Voltage

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: APT58M50JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 500V RDSon = 65mΩ Max @ Tj = 25°C ID = 58A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode - Zero reverse recovery

Contextual Info: su GEC P L E S S E Y JANUARY 1996 S E M I C O N D U C T O R S DS4141-3.3 ESM4120 FAST RECOVERY DIODE KEY PARAMETERS v 1000V RRM 334A |f AV 4000A ’fsm 15|iC Qr APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■ Inverters And Choppers. ■ Welding.

Si7160DP

Abstract: 74954 si7160 A4466
Contextual Info: Si7160DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0087 at VGS = 10 V 20 0.010 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 21 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 S 2 S 3 APPLICATIONS G 4 • Notebook

Contextual Info: OSHÏBA LA S E R /FB R O P TIC Gl D • T7 2SE D ü lbD ññ S «TO SL - T -4 T -Q 7 TOSHIBA LASER DIODE TOLD 360 Features • • • • • Wavelength 1.55/im Coaxial Package (Hermetically Sealed) Suitable for High Bit Rate Modulation Single-mode Fiber Pigtail

IRF7523D1

Contextual Info: PD- 91647C IRF7523D1 FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = 30V

marking code SM 96 diode

Abstract: IRF7501
Contextual Info: PD -95437 IRF7526D1PbF l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint Lead-Free Description FETKY TM MOSFET & Schottky Diode A A S G 1 8 K 2 7 K 3 6 4 5

NDL7911P

Abstract: NDL7911PD477 NDL7911PD485 NDL7911PD493 NDL7911PD501 NDL7911PD509 NDL7911PD517 NDL7911PD525 NDL7911PD533
Contextual Info: 1550 nm OPTICAL FIBER COMM. EA MODULATOR INTEGRATED MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s D-WDM NDL7911P ULTRALONG-REACH APPLICATIONS 360 km SERIES FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR The NDL7911P Series is an EA modulator integrated 1550 nm

OZ 9936

Abstract: st smd diode marking code "LE" DIODE smd marking Ak I2102 AB marking code smd diode marking code EA SMD smd D207 smd diode marking JC Diode 1600V To 220 smd code diode 20a
Contextual Info: Bulletin I2102 rev. C 05/00 SAFEIR Series 20ETS.S INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300A Description/Features VRRM 800 to 1600V The 20ETS.S rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation