NX6306GK Search Results

NX5304

Abstract: NX5306 NX6306 NX6306GH NX6306GK NX6306SH NX6306SK inGaAs
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This

NX5304

Abstract: NX5306 NX6306 NX6306GH NX6306GK NX6306SH NX6306SK
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This

NX6306

Abstract: NX6306GH NX6306GK NX6306SH NX6306SK
Contextual Info: PRELIMINARY DATASHEET NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE NX6306 SERIES FOR 155 Mb/s and 622 Mb/s APPLICATIONS DESCRIPTION NEC's NX6306 Series is a 1 310 nm Multiple Quantum Well NX6306S Series MQW structured Distributed Feed-Back (DFB) laser diode

NX6306

Abstract: NX6306GH NX6306GI NX6306GJ NX6306GK NX6306SH NX6306SI LD chip
Contextual Info: PRELIMINARY DATASHEET NEC's 1310 nm InGaAsP MQW DFB NX6306 LASER DIODE IN CAN PACKAGE Series FOR 155 Mb/s AND 622 Mb/s APPLICATIONS FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: ITH = 10 mA @ TC = 25°C • HIGH SPEED: