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    DIODE OCE Search Results

    DIODE OCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    DIODE OCE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    zener diode RD2.2S

    Abstract: RD2.0HS rd2.2m nec 10f RD16MW str 450 a RD4.3HS NEC Zener diode RD3.0M RD3.0HS RD51P
    Contextual Info: Diode Zener Diode • Zener Diode Quick Reference 1/2 Vz (V) P (W) TYP. 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 Package 0.2 0.15 RD4.7UJ RD5.1UJ


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    rd10ujrd11ujrd12ujrd13uj+16rd15ujrd16ujrd18ujrd20ujrd22ujrd24ujzener diode rd2.2srd2.0hsrd2.2mnec 10frd16mwstr 450 ard4.3hsnec zener diode rd3.0mrd3.0hsrd51p PDF

    FMXA-1106S

    Abstract: XA1106 Diode XA1106 FMX-G26S sanken lot number B105 CF35 SANKEN power supply SANKEN smps
    Contextual Info: Ultrafast Recovery Diode FMXA-1106S •General Description November, 2005 ■Package-TO220F-2Pin Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a fast recovery diode


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    fmxa-1106spackage---to220f-2pind01-002ea-051128xa1106+7diode xa1106fmx-g26ssanken lot numberb105cf35sanken power supplysanken smps PDF

    XA1106

    Abstract: Diode XA1106 FMXG26 FMX-G26S FMXA-1106S sanken lot number B105 Sanken marking SANKEN power supply
    Contextual Info: Ultrafast Recovery Diode FMXA-1106S •General Description November, 2005 ■Package-TO220F-2Pin Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a fast recovery diode


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    fmxa-1106spackage---to220f-2pind01-002ea-051128xa1106+7diode xa1106fmxg26fmx-g26ssanken lot numberb105sanken markingsanken power supply PDF

    MPEN-230AF

    Abstract: sanken sanken power transistor CF35
    Contextual Info: Schottky Barrier Diode MPEN-230AF December. 2005 •General Description ■Package-TO-262 High Voltage Schottky Barrier Diode 100V . The low leakage current and low VF have been achieved by using the optimum barrier metal. ■Applications • DC-DC converters


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    mpen-230afpackage---to-262100vguaranteed01-006ea-051202+3sankensanken power transistorcf35 PDF

    diode B105

    Abstract: Sanken catalogue MPEN-230AF
    Contextual Info: Schottky Barrier Diode MPEN-230AF December. 2005 •General Description ■Package-TO-262 High Voltage Schottky Barrier Diode 100V . The low leakage current and low VF have been achieved by using the optimum barrier metal. ■Applications • DC-DC converters


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    mpen-230afpackage---to-262100vguaranteed01-006ea-051202+2diode b105sanken catalogue PDF

    d0109

    Abstract: sanken power transistor FMEN-210A 210A
    Contextual Info: Schottky Barrier Diode FMEN-210A March, 2006 •General Description ■Package-TO220F FMEN-210A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications • DC-DC converters


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    fmen-210apackage---to220fd01-090ea-060310d0109+2sanken power transistor210a PDF

    Contextual Info: Schottky Barrier Diode FMEN-220A March, 2006 General Description Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications DC-DC converters


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    fmen-220apackage---to220fd01-010ea-060310 PDF

    FME-220B

    Abstract: sanken power transistor CF35 FME220 sanken
    Contextual Info: Schottky Barrier Diode FME-220B April. 2007 •General Description ■Package-TO220F FME-220B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters


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    fme-220bpackage---to220f150vguaranteed01-013ea-070323+4sanken power transistorcf35fme220sanken PDF

    FMEN-210A

    Abstract: FMEN210
    Contextual Info: Schottky Barrier Diode FMEN-210A March, 2006 •General Description ■Package-TO220F FMEN-210A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications • DC-DC converters


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    fmen-210apackage---to220fd01-090ea-060310fmen210 PDF

    FME-210B

    Abstract: CF35 210B
    Contextual Info: Schottky Barrier Diode FME-210B April. 2007 •General Description ■Package-TO220F FME-210B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters


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    fme-210bpackage---to220f150vguaranteed01-012ea-070322+2cf35210b PDF

    FMEN-220A

    Contextual Info: Schottky Barrier Diode FMEN-220A March, 2006 •General Description ■Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ● DC-DC converters


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    fmen-220apackage---to220f0e-01d01-010ea-060310 PDF

    Contextual Info: Schottky Barrier Diode FMEN-210A March, 2006 General Description Package-TO220F FMEN-210A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications • DC-DC converters


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    fmen-210apackage---to220fd01-090ea-060310 PDF

    FME-210B

    Abstract: sanken CF35 Sanken catalog
    Contextual Info: Schottky Barrier Diode FME-210B April. 2007 •General Description ■Package-TO220F FME-210B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters


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    fme-210bpackage---to220f150vguaranteed01-012ea-070322+3sankencf35sanken catalog PDF

    sanken power transistor

    Abstract: CF35 FMEN-220A sanken DSA0016518 Sanken catalog "Sanken Rectifiers"
    Contextual Info: Schottky Barrier Diode FMEN-220A March, 2006 •General Description ■Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ● DC-DC converters


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    fmen-220apackage---to220f0e-01d01-010ea-060310+6sanken power transistorcf35sankendsa0016518sanken catalogsanken rectifiers PDF

    Contextual Info: Schottky Barrier Diode MPEN-230AF General Description December. 2005 Package-TO-262 High Voltage Schottky Barrier Diode 100V . The low leakage current and low VF have been achieved by using the optimum barrier metal. Applications • DC-DC converters • AC adapter


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    mpen-230afpackage---to-262100vguaranteed01-006ea-051202 PDF

    smd diode 74a

    Abstract: IEC1000-4-2 uPD72011 SC-76 SC-78 smd diode 2d smd diode 6D smd lg diode PD7201 SC5915
    Contextual Info: E.S.D NOISE CLIPPING DIODE SERIES November 1998 E.S.D NOISE CLIPPING DIODES The absorption device for Electrostatic Discharge and Surge NNCD is the diode developed for the absorption device for ESD Electrostatic Discharge and surge. Recently, necessity of complying with the EMC (Electromagnetic Compatibility) regulation


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    iec1000-4-2d11663ej4v0pf00smd diode 74aupd72011+7sc-76sc-78smd diode 2dsmd diode 6dsmd lg diodepd7201sc5915 PDF

    Diode XA1106

    Abstract: XA1106
    Contextual Info: Ultrafast Recovery Diode FMXA-1106S General Description November, 2005 Package-TO220F-2Pin Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a fast recovery diode FRD for a continuous-current-mode PFC circuit.


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    fmxa-1106spackage---to220f-2pind01-002ea-051128diode xa1106+1xa1106 PDF

    74F1056

    Abstract: 74F1056SC C1995 M16A b50 diode
    Contextual Info: 74F1056 8-Bit Schottky Barrier Diode Array General Description Features The ’F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines This device is designed to suppress negative transients caused by line reflections switching


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    74f1056f105674f1056sc16-lead+3c1995m16ab50 diode PDF

    74F1056

    Abstract: M16A 74F1056SC
    Contextual Info: 74F1056 8-Bit Schottky Barrier Diode Array General Description The ’F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines. This device is designed to suppress negative transients caused by line reflections, switching


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    74f1056f105674f1056sc16-lead+1m16a PDF

    10ghz optical modulator driver

    Abstract: 10Gb/s laser driver FTM1141GF STM-64 10 gb laser diode thermistor 503
    Contextual Info: Driver Integrated 10Gb/s MI-DFB LD Module FTM1141GF FEATURES • Driver integrated 10Gb/s MI-DFB module for 800ps/nm optical transmission • MI-DFB-LD Modulator Integrated DFB Laser Diode is included • Modulator driver IC is included • Built-in optical isolator, PIN-Photo diode for monitor, thermistor


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    10gb/sftm1141gf800ps/nma4888+510ghz optical modulator driver10gb/s laser driverstm-6410 gb laser diodethermistor 503 PDF

    10 gb laser diode

    Abstract: 10ghz optical modulator driver
    Contextual Info: Driver Integrated 10Gb/s MI-DFB LD Module FTM1141GF FEATURES • Driver integrated 10Gb/s MI-DFB module for 800ps/nm optical transmission • MI-DFB-LD Modulator Integrated DFB Laser Diode is included • Modulator driver IC is included • Built-in optical isolator, PIN-Photo diode for monitor, thermistor


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    10gb/sftm1141gf800ps/nmfcsi0103m200+210 gb laser diode10ghz optical modulator driver PDF

    10ghz optical modulator driver

    Abstract: FTM1141GF-C nrz optical modulator 10Gb/s laser driver stm-64 dfb TEC Driver STM-64 10 gb laser diode Integrated Modulator and Driver Module
    Contextual Info: Driver Integrated 10Gb/s MI-DFB LD Module FTM1141GF-C FEATURES • Driver integrated 10Gb/s MI-DFB module for 1600ps/nm optical transmission • MI-DFB-LD Modulator Integrated DFB Laser Diode is installed • Modulator driver IC is installed • Built-in optical isolator, PIN-Photo diode for monitor, thermistor


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    10gb/sftm1141gf-c1600ps/nmals4888+810ghz optical modulator drivernrz optical modulator10gb/s laser driverstm-64 dfbtec driverstm-6410 gb laser diodeintegrated modulator and driver module PDF

    PIN DIODES OFFER HIGH POWER HF BAND SWITCHING

    Abstract: depth sounder sonar doppler sonar motion DOPPLER marine sonar Microwave PIN diode sonar 500 long range acoustic device PIN DIODE
    Contextual Info: Summer 2000 Sonar Solutions: Same PIN Diode Switches used for MRI Applications Provide Alternative to Relays Overview SONAR the real-time imaging of submerged objects in the deep ocean is a technology enjoying explosive growth. Well over thirty firms worldwide are engaged in the


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    pin diodes offer high power hf band switchingdepth soundersonardoppler sonar+6motion dopplermarine sonarmicrowave pin diodesonar 500long range acoustic devicepin diode PDF

    MTD3010PN

    Contextual Info: Photo Diode MTD3010PN Features High Reliability in Demanding Environments Optical Grade Glass Lens Narrow Angular Response Applications Edge Sensing Smoke Detectors Fiber Optics Optical Communication Optical Switch o Maximum Ratings Ta=25 C Characteristic


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    mtd3010pn PDF