DIODE OCE Search Results

zener diode RD2.2S

Abstract: RD2.0HS rd2.2m nec 10f RD16MW str 450 a RD4.3HS NEC Zener diode RD3.0M RD3.0HS RD51P
Contextual Info: Diode Zener Diode • Zener Diode Quick Reference 1/2 Vz (V) P (W) TYP. 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 Package 0.2 0.15 RD4.7UJ RD5.1UJ

FMXA-1106S

Abstract: XA1106 Diode XA1106 FMX-G26S sanken lot number B105 CF35 SANKEN power supply SANKEN smps
Contextual Info: Ultrafast Recovery Diode FMXA-1106S •General Description November, 2005 ■Package-TO220F-2Pin Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a fast recovery diode

XA1106

Abstract: Diode XA1106 FMXG26 FMX-G26S FMXA-1106S sanken lot number B105 Sanken marking SANKEN power supply
Contextual Info: Ultrafast Recovery Diode FMXA-1106S •General Description November, 2005 ■Package-TO220F-2Pin Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a fast recovery diode

MPEN-230AF

Abstract: sanken sanken power transistor CF35
Contextual Info: Schottky Barrier Diode MPEN-230AF December. 2005 •General Description ■Package-TO-262 High Voltage Schottky Barrier Diode 100V . The low leakage current and low VF have been achieved by using the optimum barrier metal. ■Applications • DC-DC converters

diode B105

Abstract: Sanken catalogue MPEN-230AF
Contextual Info: Schottky Barrier Diode MPEN-230AF December. 2005 •General Description ■Package-TO-262 High Voltage Schottky Barrier Diode 100V . The low leakage current and low VF have been achieved by using the optimum barrier metal. ■Applications • DC-DC converters

d0109

Abstract: sanken power transistor FMEN-210A 210A
Contextual Info: Schottky Barrier Diode FMEN-210A March, 2006 •General Description ■Package-TO220F FMEN-210A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications • DC-DC converters

Contextual Info: Schottky Barrier Diode FMEN-220A March, 2006 General Description Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications DC-DC converters

FME-220B

Abstract: sanken power transistor CF35 FME220 sanken
Contextual Info: Schottky Barrier Diode FME-220B April. 2007 •General Description ■Package-TO220F FME-220B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters

FMEN-210A

Abstract: FMEN210
Contextual Info: Schottky Barrier Diode FMEN-210A March, 2006 •General Description ■Package-TO220F FMEN-210A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications • DC-DC converters

FME-210B

Abstract: CF35 210B
Contextual Info: Schottky Barrier Diode FME-210B April. 2007 •General Description ■Package-TO220F FME-210B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters

FMEN-220A

Contextual Info: Schottky Barrier Diode FMEN-220A March, 2006 •General Description ■Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ● DC-DC converters

Contextual Info: Schottky Barrier Diode FMEN-210A March, 2006 General Description Package-TO220F FMEN-210A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications • DC-DC converters

FME-210B

Abstract: sanken CF35 Sanken catalog
Contextual Info: Schottky Barrier Diode FME-210B April. 2007 •General Description ■Package-TO220F FME-210B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters

sanken power transistor

Abstract: CF35 FMEN-220A sanken DSA0016518 Sanken catalog "Sanken Rectifiers"
Contextual Info: Schottky Barrier Diode FMEN-220A March, 2006 •General Description ■Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ● DC-DC converters

Contextual Info: Schottky Barrier Diode MPEN-230AF General Description December. 2005 Package-TO-262 High Voltage Schottky Barrier Diode 100V . The low leakage current and low VF have been achieved by using the optimum barrier metal. Applications • DC-DC converters • AC adapter

smd diode 74a

Abstract: IEC1000-4-2 uPD72011 SC-76 SC-78 smd diode 2d smd diode 6D smd lg diode PD7201 SC5915
Contextual Info: E.S.D NOISE CLIPPING DIODE SERIES November 1998 E.S.D NOISE CLIPPING DIODES The absorption device for Electrostatic Discharge and Surge NNCD is the diode developed for the absorption device for ESD Electrostatic Discharge and surge. Recently, necessity of complying with the EMC (Electromagnetic Compatibility) regulation

Diode XA1106

Abstract: XA1106
Contextual Info: Ultrafast Recovery Diode FMXA-1106S General Description November, 2005 Package-TO220F-2Pin Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a fast recovery diode FRD for a continuous-current-mode PFC circuit.

74F1056

Abstract: 74F1056SC C1995 M16A b50 diode
Contextual Info: 74F1056 8-Bit Schottky Barrier Diode Array General Description Features The ’F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines This device is designed to suppress negative transients caused by line reflections switching

74F1056

Abstract: M16A 74F1056SC
Contextual Info: 74F1056 8-Bit Schottky Barrier Diode Array General Description The ’F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines. This device is designed to suppress negative transients caused by line reflections, switching

10ghz optical modulator driver

Abstract: 10Gb/s laser driver FTM1141GF STM-64 10 gb laser diode thermistor 503
Contextual Info: Driver Integrated 10Gb/s MI-DFB LD Module FTM1141GF FEATURES • Driver integrated 10Gb/s MI-DFB module for 800ps/nm optical transmission • MI-DFB-LD Modulator Integrated DFB Laser Diode is included • Modulator driver IC is included • Built-in optical isolator, PIN-Photo diode for monitor, thermistor

10 gb laser diode

Abstract: 10ghz optical modulator driver
Contextual Info: Driver Integrated 10Gb/s MI-DFB LD Module FTM1141GF FEATURES • Driver integrated 10Gb/s MI-DFB module for 800ps/nm optical transmission • MI-DFB-LD Modulator Integrated DFB Laser Diode is included • Modulator driver IC is included • Built-in optical isolator, PIN-Photo diode for monitor, thermistor

10ghz optical modulator driver

Abstract: FTM1141GF-C nrz optical modulator 10Gb/s laser driver stm-64 dfb TEC Driver STM-64 10 gb laser diode Integrated Modulator and Driver Module
Contextual Info: Driver Integrated 10Gb/s MI-DFB LD Module FTM1141GF-C FEATURES • Driver integrated 10Gb/s MI-DFB module for 1600ps/nm optical transmission • MI-DFB-LD Modulator Integrated DFB Laser Diode is installed • Modulator driver IC is installed • Built-in optical isolator, PIN-Photo diode for monitor, thermistor

PIN DIODES OFFER HIGH POWER HF BAND SWITCHING

Abstract: depth sounder sonar doppler sonar motion DOPPLER marine sonar Microwave PIN diode sonar 500 long range acoustic device PIN DIODE
Contextual Info: Summer 2000 Sonar Solutions: Same PIN Diode Switches used for MRI Applications Provide Alternative to Relays Overview SONAR the real-time imaging of submerged objects in the deep ocean is a technology enjoying explosive growth. Well over thirty firms worldwide are engaged in the

MTD3010PN

Contextual Info: Photo Diode MTD3010PN Features High Reliability in Demanding Environments Optical Grade Glass Lens Narrow Angular Response Applications Edge Sensing Smoke Detectors Fiber Optics Optical Communication Optical Switch o Maximum Ratings Ta=25 C Characteristic