zener diode RD2.2S
Abstract: RD2.0HS rd2.2m nec 10f RD16MW str 450 a RD4.3HS NEC Zener diode RD3.0M RD3.0HS RD51P
Contextual Info: Diode Zener Diode • Zener Diode Quick Reference 1/2 Vz (V) P (W) TYP. 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 Package 0.2 0.15 RD4.7UJ RD5.1UJ
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rd10ujrd11ujrd12ujrd13uj+16rd15ujrd16ujrd18ujrd20ujrd22ujrd24ujzener diode rd2.2srd2.0hsrd2.2mnec 10frd16mwstr 450 ard4.3hsnec zener diode rd3.0mrd3.0hsrd51p
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FMXA-1106S
Abstract: XA1106 Diode XA1106 FMX-G26S sanken lot number B105 CF35 SANKEN power supply SANKEN smps
Contextual Info: Ultrafast Recovery Diode FMXA-1106S •General Description November, 2005 ■Package-TO220F-2Pin Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a fast recovery diode
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XA1106
Abstract: Diode XA1106 FMXG26 FMX-G26S FMXA-1106S sanken lot number B105 Sanken marking SANKEN power supply
Contextual Info: Ultrafast Recovery Diode FMXA-1106S •General Description November, 2005 ■Package-TO220F-2Pin Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a fast recovery diode
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fmxa-1106spackage---to220f-2pind01-002ea-051128xa1106+7diode xa1106fmxg26fmx-g26ssanken lot numberb105sanken markingsanken power supply
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MPEN-230AF
Abstract: sanken sanken power transistor CF35
Contextual Info: Schottky Barrier Diode MPEN-230AF December. 2005 •General Description ■Package-TO-262 High Voltage Schottky Barrier Diode 100V . The low leakage current and low VF have been achieved by using the optimum barrier metal. ■Applications • DC-DC converters
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diode B105
Abstract: Sanken catalogue MPEN-230AF
Contextual Info: Schottky Barrier Diode MPEN-230AF December. 2005 •General Description ■Package-TO-262 High Voltage Schottky Barrier Diode 100V . The low leakage current and low VF have been achieved by using the optimum barrier metal. ■Applications • DC-DC converters
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mpen-230afpackage---to-262100vguaranteed01-006ea-051202+2diode b105sanken catalogue
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d0109
Abstract: sanken power transistor FMEN-210A 210A
Contextual Info: Schottky Barrier Diode FMEN-210A March, 2006 •General Description ■Package-TO220F FMEN-210A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications • DC-DC converters
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Contextual Info: Schottky Barrier Diode FMEN-220A March, 2006 General Description Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications DC-DC converters
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FME-220B
Abstract: sanken power transistor CF35 FME220 sanken
Contextual Info: Schottky Barrier Diode FME-220B April. 2007 •General Description ■Package-TO220F FME-220B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters
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FMEN-210A
Abstract: FMEN210
Contextual Info: Schottky Barrier Diode FMEN-210A March, 2006 •General Description ■Package-TO220F FMEN-210A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications • DC-DC converters
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FME-210B
Abstract: CF35 210B
Contextual Info: Schottky Barrier Diode FME-210B April. 2007 •General Description ■Package-TO220F FME-210B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters
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FMEN-220A
Contextual Info: Schottky Barrier Diode FMEN-220A March, 2006 •General Description ■Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ● DC-DC converters
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Contextual Info: Schottky Barrier Diode FMEN-210A March, 2006 General Description Package-TO220F FMEN-210A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications • DC-DC converters
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FME-210B
Abstract: sanken CF35 Sanken catalog
Contextual Info: Schottky Barrier Diode FME-210B April. 2007 •General Description ■Package-TO220F FME-210B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters
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sanken power transistor
Abstract: CF35 FMEN-220A sanken DSA0016518 Sanken catalog "Sanken Rectifiers"
Contextual Info: Schottky Barrier Diode FMEN-220A March, 2006 •General Description ■Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ● DC-DC converters
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Contextual Info: Schottky Barrier Diode MPEN-230AF General Description December. 2005 Package-TO-262 High Voltage Schottky Barrier Diode 100V . The low leakage current and low VF have been achieved by using the optimum barrier metal. Applications • DC-DC converters • AC adapter
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smd diode 74a
Abstract: IEC1000-4-2 uPD72011 SC-76 SC-78 smd diode 2d smd diode 6D smd lg diode PD7201 SC5915
Contextual Info: E.S.D NOISE CLIPPING DIODE SERIES November 1998 E.S.D NOISE CLIPPING DIODES The absorption device for Electrostatic Discharge and Surge NNCD is the diode developed for the absorption device for ESD Electrostatic Discharge and surge. Recently, necessity of complying with the EMC (Electromagnetic Compatibility) regulation
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iec1000-4-2d11663ej4v0pf00smd diode 74aupd72011+7sc-76sc-78smd diode 2dsmd diode 6dsmd lg diodepd7201sc5915
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Diode XA1106
Abstract: XA1106
Contextual Info: Ultrafast Recovery Diode FMXA-1106S General Description November, 2005 Package-TO220F-2Pin Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a fast recovery diode FRD for a continuous-current-mode PFC circuit.
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74F1056
Abstract: 74F1056SC C1995 M16A b50 diode
Contextual Info: 74F1056 8-Bit Schottky Barrier Diode Array General Description Features The ’F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines This device is designed to suppress negative transients caused by line reflections switching
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74F1056
Abstract: M16A 74F1056SC
Contextual Info: 74F1056 8-Bit Schottky Barrier Diode Array General Description The ’F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines. This device is designed to suppress negative transients caused by line reflections, switching
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10ghz optical modulator driver
Abstract: 10Gb/s laser driver FTM1141GF STM-64 10 gb laser diode thermistor 503
Contextual Info: Driver Integrated 10Gb/s MI-DFB LD Module FTM1141GF FEATURES • Driver integrated 10Gb/s MI-DFB module for 800ps/nm optical transmission • MI-DFB-LD Modulator Integrated DFB Laser Diode is included • Modulator driver IC is included • Built-in optical isolator, PIN-Photo diode for monitor, thermistor
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10gb/sftm1141gf800ps/nma4888+510ghz optical modulator driver10gb/s laser driverstm-6410 gb laser diodethermistor 503
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10 gb laser diode
Abstract: 10ghz optical modulator driver
Contextual Info: Driver Integrated 10Gb/s MI-DFB LD Module FTM1141GF FEATURES • Driver integrated 10Gb/s MI-DFB module for 800ps/nm optical transmission • MI-DFB-LD Modulator Integrated DFB Laser Diode is included • Modulator driver IC is included • Built-in optical isolator, PIN-Photo diode for monitor, thermistor
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10gb/sftm1141gf800ps/nmfcsi0103m200+210 gb laser diode10ghz optical modulator driver
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10ghz optical modulator driver
Abstract: FTM1141GF-C nrz optical modulator 10Gb/s laser driver stm-64 dfb TEC Driver STM-64 10 gb laser diode Integrated Modulator and Driver Module
Contextual Info: Driver Integrated 10Gb/s MI-DFB LD Module FTM1141GF-C FEATURES • Driver integrated 10Gb/s MI-DFB module for 1600ps/nm optical transmission • MI-DFB-LD Modulator Integrated DFB Laser Diode is installed • Modulator driver IC is installed • Built-in optical isolator, PIN-Photo diode for monitor, thermistor
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10gb/sftm1141gf-c1600ps/nmals4888+810ghz optical modulator drivernrz optical modulator10gb/s laser driverstm-64 dfbtec driverstm-6410 gb laser diodeintegrated modulator and driver module
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PIN DIODES OFFER HIGH POWER HF BAND SWITCHING
Abstract: depth sounder sonar doppler sonar motion DOPPLER marine sonar Microwave PIN diode sonar 500 long range acoustic device PIN DIODE
Contextual Info: Summer 2000 Sonar Solutions: Same PIN Diode Switches used for MRI Applications Provide Alternative to Relays Overview SONAR the real-time imaging of submerged objects in the deep ocean is a technology enjoying explosive growth. Well over thirty firms worldwide are engaged in the
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pin diodes offer high power hf band switchingdepth soundersonardoppler sonar+6motion dopplermarine sonarmicrowave pin diodesonar 500long range acoustic devicepin diode
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MTD3010PN
Contextual Info: Photo Diode MTD3010PN Features High Reliability in Demanding Environments Optical Grade Glass Lens Narrow Angular Response Applications Edge Sensing Smoke Detectors Fiber Optics Optical Communication Optical Switch o Maximum Ratings Ta=25 C Characteristic
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