FMEN210 Search Results

FMPG2F

Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179

Contextual Info: 4-4 Schottky Barrier Diodes Low IR “E Series” ●Surface-Mount V RM V 40 IF (AV) (A) Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (mA) V R=VRM max IR(H) (mA) VR=V RM

fn651

Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

d0109

Abstract: sanken power transistor FMEN-210A 210A
Contextual Info: Schottky Barrier Diode FMEN-210A March, 2006 •General Description ■Package-TO220F FMEN-210A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications • DC-DC converters

en210b

Contextual Info: SANKEN ELECTRIC CO., LTD. FMEN-210B 1. Scope The present specifications shall apply to an FMEN-210B. 2. Outline Type Silicon Schottky Barrier Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 081121

thermistor type R53

Contextual Info: Off-Line PWM Controllers with Integrated Power MOSFET STR-W6000S Series General Descriptions Package The STR-W6000S series are power ICs for switching power supplies, incorporating a MOSFET and a current mode PWM controller IC. The low standby power is accomplished by the

SD MOSFET DRIVE DATASHEET 4468 8 PIN

Abstract: SK 18752 ctx12s fgt313 18752 SANKEN sla6805m fn651 sla6101 SK 18751 str20012
Contextual Info: 半导体产品总目录 Sanken Electric Co., Ltd. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan 电话：81-3-3986-6164 传真：81-3-3986-8637 海外销售办事处 亚洲 新加坡 Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 189720

Contextual Info: Schottky Barrier Diode FMEN-210A March, 2006 •General Description ■Package-TO220F FMEN-210A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications • DC-DC converters

13005 A

Abstract: SPJ 13005
Contextual Info: 4-4 Schottky Barrier Diodes Low IR “E Series” ●Surface-Mount V RM V 40 IF (AV) (A) Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (mA) V R=VRM max IR(H) (mA) VR=V RM

rjp 6065

Abstract: RJP 3045 ACS758 tda 7304 sla6805m OHD 3- 105M SLA6805MP tda 3640 pin diode tda 1053 ACS758LCB
Contextual Info: Bulletin No O03JF0 （Jan.,2010） 半導体総合カタログ I C トランジ スタ サ イリスタ ダ イオ ード サンケン電気株式会社 http://www.sanken-ele.co.jp 注意 ● 本書に記載されている内容は改良などにより予告なく変更することがありますので、最新の情報

CTX12S

Abstract: SLA4038 fn651 SLA4037 sla1004 CTB-34D SAP17N 2SC5586 2SK1343 CTPG2F
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.2.4 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102

FMN-1106S

Abstract: rvb 602 diode ry2a FMN 2206 RBV-3006 ry2a zener diode reference guide RU20x RK1X fmx4202s
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Ordering Information & Standard Packing Quantities . 194 Taping Specifications . 196

fgt313

Abstract: transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a
Contextual Info: Part Number Index Part No. Category Description Page Part No. Category Description Page 2SA1186 Transistor Audio and General Purpose LAPT 156 2SC4024 Transistor DC-DC Converter and General Purpose 158 2SA1215 Transistor Audio and General Purpose (LAPT) 156

strw6053

Abstract: STR-W6053 strw6052 strw6053s mosfet Switch Mode Power Supplies ac dc pc123 STRW-6052s STRW6052s STR-W6052 STRW-6053 STR-W6053S
Contextual Info: Application Information STR-W6000S Series PWM Off-Line Switching Regulator ICs General Description The STR-W6000S series are power ICs for switching power supplies, incorporating a power MOSFET and a current mode PWM controller IC in one package. To achieve low

SSC9512

Abstract: STR-W6750 B1560 equivalent STRW6252 str3a100 sanken audio modules 24v dc soft start motor control diagram DARLINGTON TRANSISTOR ARRAY strw6053 inverter 12v to 220 ac mosfet based
Contextual Info: Bulletin No O03EH0 （Mar, 2013） Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China

Schottky Barrier Diodes

Abstract: FMEN-210B FMEN-2308
Contextual Info: 4-4 Schottky Barrier Diodes Low IR “E Series” ●Surface-Mount VRM V IF (AV) (A) Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) Tstg (°C) VF (V) max IF (A) IR (mA) VR=VRM max IR(H) (mA) VR=VRM max

transistor BU 102S

Abstract: fgt313 stp 10n40 SLA4052 BU 102S c4381 high voltage 3-phase motor driver ic RELAY sz - 2103 12V C5100 MOSFET SLA5096
Contextual Info: SEMICONDUCTORS GENERAL CATALOG 2010 Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China

FMEN-210B

Abstract: FME-2106 FME-24H FMEN-210A FMEN-220A FMEN-220B MPEN-230AF FMEN-230A
Contextual Info: 4-4 Schottky Barrier Diodes Low IR “E Series” ●Surface-Mount VRM V IF (AV) (A) Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) Tstg (°C) VF (V) max IF (A) IR (mA) VR=VRM max IR(H) (mA) VR=VRM max

Contextual Info: Quasi-Resonant Controllers with Integrated Power MOSFET STR-Y6700 Series General Descriptions Package The STR-Y6700 series are power ICs for switching power supplies, incorporating a MOSFET and a quasi-resonant controller IC. Including an auto standby function in the controller,

str3a100

Abstract: thermistor type R53
Contextual Info: Off-Line PWM Controllers with Integrated Power MOSFET STR3A100 Series General Descriptions Package The STR3A100 series are power ICs for switching power supplies, incorporating a MOSFET and a current mode PWM controller IC. The low standby power is accomplished by the

fmen-210b

Abstract: FMEN-220B FMEN-2308 FMEN-2208 FMEN2208
Contextual Info: 4-4 Schottky Barrier Diodes Low IR “E Series” ●Surface-Mount VRM V IF (AV) (A) Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) Tstg (°C) VF (V) max IF (A) IR (mA) VR=VRM max IR(H) (mA) VR=VRM max

Contextual Info: 4-4 Schottky Barrier Diodes Low IR “E Series” ●Surface-Mount V RM V 40 IF (AV) (A) Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (mA) V R=VRM max IR(H) (mA) VR=V RM

fmen-210b

Contextual Info: 4-4 Schottky Barrier Diodes Low IR “E Series” ●Surface-Mount VRM V IF (AV) (A) Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) Tstg (°C) VF (V) max IF (A) IR (mA) VR=VRM max IR(H) (mA) VR=VRM max