DIODE OAS Search Results

5s70

Abstract: 1N3604 F100 tl1507
Contextual Info: 1 IM 3604 Silicon planar diode The silicon planar diode 1 N 3 6 0 4 in the gla ss package 51 A 2 D IN 41 8 8 0 D O -7 is designed for use as high-speed sw itching diode as well as for general sw itching applications. The planar technique results in short reverse recovery time, small

TC124A

Contextual Info: U î k 7 P - p ; * # < 7 | - - k y -O M ü tipe Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS S F 10L C 20U 200V 10A • f iy - i'x • trr3 5 n s •5 S ± :? J1 Æ -Jb h ' • S Ê liiK E S K V 'K E E •SR Bâü m y u - T U 'f i i mmm. oAs assa

Contextual Info: A dvanced P o w er Te c h n o l o g y 1 - Cathode 2 -Anode Back of Case - Cathode APT15D40K 400V 15A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters

Contextual Info: MITSUBISHI Neh POWER MOSFET FS1OASJ-3 HIGH-SPEED SWITCHING USE FS1 OASJ-3 ' 4V DRIVE ' V d s s . ' rDS ON (MAX) . ' Id . ' Integrated Fast Recovery Diode (TYP.) .150V . 160mi2 . 10A 90ns APPLICATION

Contextual Info: MITSUBISHI Neh POWER MOSFET FS1OAS-2 HIGH-SPEED SWITCHING USE FS1 OAS-2 * * ' 10V DRIVE ' V d s s . . 1oov ' rDS ON (MAX) . . 0.23Í2 ' Id . . 10A ' Integrated Fast Recovery Diode (TYP.) 100ns APPLICATION

SHINDENGEN DIODE

Contextual Info: S U Â T /W ^ Surface Mounting Device ÿ 3 7 h — Schottky Barrier Diode K Diode Array mïïrta m S1ZAS6 OUTLINE DIMENSIONS Case : 1Z Unii : mm Weight O.Lïp $ Ç> 12 a AA 60V 1.2A D @ (3 - HI T- i1 •S M D IV pe No. : ~ : — : + : - CD Mal* code

904nm

Abstract: GaAs 904nm LD67 LD61 LD60 LP-23C 904nm laser diode
Contextual Info: r LASER DIODE INC 15E D I SBÖSTÖS QDGGMSS E | a •a a I T -H I “ OS' _LD-60 SERIES_ LASER DIODE, INC. SINGLE HETEROJUNCTION GaAs LASER DIODES FEATURES High Efficiency at Low Drive Currents P Up to 20 Watts Peak Power Output P Operation to 75° C for Selected Devices

Contextual Info: Schottky Barrier Diode Twin Diode mtmm SG30SC6M o u t lin e Unit : mm Package : FTO-220G 60V 30A nybà J# 0 t| Feature Tj=150°C • Tj=150°C • Full Molded • High lo Rating-Small-PKG Main Use • Switching Regulator • DC/DC D y J t - 9 • DC/DC Converter

Contextual Info: MITSUBISHI Neh POWER MOSFET F S 1 O A S J -2 HIGH-SPEED SWITCHING USE FS1 OASJ-2 ' 4V DRIVE ' V d s s . ' rDS ON (MAX) . ' Id . ' Integrated Fast Recovery Diode (TYP.) . 100V . 0.190 .10A 95ns APPLICATION

Contextual Info: Surface Mounting Device y b V T & ' f Schottky Barrier Diode # — F y - o m WÆ Twin Diode OUTLINE DIMENSIONS DF40SC3L Case : STO-220 10.2 = 02 n , 30V 40A Type No. ta tte r 2.4 ±0-a 40SC3L •SM D • T j 150TC Ü r n • Ê V f = 0 .4 5 V # P 0 .1 ±fil

Contextual Info: MITSUBISHI Neh POWER MOSFET FS1OASH-2 HIGH-SPEED SWITCHING USE FS1 OASH-2 ♦ f ' 2.5V DRIVE ' V . . 1oov ' rDS ON (MAX) . . 0.21 Q. ' Id . . 10A ' Integrated Fast Recovery Diode (TYP.) d ss 95ns A P P LIC A TIO N

smd diode schottky code marking 2F

Abstract: DG1N15A smd diode 5H J532 DIODE MARKING 9Y 1N711
Contextual Info: Schottky Barrier Diode Single Diode m tm DG 1 N 15A Weight 0.011 g Typ 3.5 CD r Feature a 1Ultra-small SMD • i2j®sy=0.8mm 1Ultra-thin PKG=0.8mm • < S I r = 0 .0 5 m A 1Low Ir = 0 .0 5 itiA L»[c_ <. Lì m (?) I |N 7 1 1 • ^JvS S M D • Unit-m m

Contextual Info: '> 3 7 v o w Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS D5SC4M Case : ITO-220 40V 5A • T j 15 0 t: • P rrsm •7 J L Æ -J b K •S R S S •D C /D C □ » { - ; ? •mm. y - A , oa«§§ •aa, m x-sjim s • ü Ê tè ü RATINGS • Îê fc fU ^ Æ fê

FtZ MARKING CODE

Abstract: D25SC6M D25SC6MR
Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE D25SC6MR Unit :m m P a c k a g e : IT O -3 P W eight 4.3k T y p 15 60V 25A 5.5 n-yt-m XW ) D a te code Feature • Tj=i5(rc • Tj=150°C • P r r s m P K t? • P rrsm R ating • ttU K S B • High lo Rating • 7 J I Æ - J L/K

s1P SOT23

Abstract: S1p MARKING BBY31 MARKING S1P SOT23 DIODE marking CODE 28 "Variable Capacitance Diode" VARIABLE CAPACITANCE DIODE
Contextual Info: b3E J> m _ bbSB'lEM GQ7427M 72Ö « S I C 3 NAPC/PHILIPS BBY31 J SEniCOND FOR D E T A IL E D IN F O R M A T IO N SEE T H E L A TE S T ISSUE OF H A N D B O O K SC01 OR D A T A S H E E T VARIABLE CAPACITANCE DIODE S ilicon planar variable capacitance diode in a m icro m in ia tu re envelope. It is intended fo r e le ctro n ic

Contextual Info: s e MIKRO n zurück V rsm V rrm dv/ Itrms (maximum value for continuous operation V drm dt)cr 75 A V V V/|xs 500 400 500 SEMIPACK 1 Thyristor / Diode Modules Itav (sin. 180; T oase = 68 °C) 48 A - - SKKH 41/04 D - 700 600 500 SKKT 41/06 D SKKT 42/06 D

SMP1300

Abstract: P1321 MP-130 P-1302 P1302 mp132
Contextual Info: ESAlpha Plastic Packaged Surface Mount PIN Diodes SMP1300 Series Features n Industry Standard Outlines SOD-323 * SOT-23 SOT-143 Designed for High Performance Switches & Attenuators Single and Dual Diode Configurations Maximum Ratings Low Inductance Designs for Microwave

Contextual Info: SEMIKRON zurück V rsm V rrm dv/ Itrms (maximum value for continuous operation V drm dt)cr 125 A V V V/|xs 700 600 500 SKKT 71/06 D 900 800 SEMIPACK 1 Thyristor / Diode Modules Itav (sin. 180; T oase = 78 °C) 80 A - - SKKH 72/06 D 500 SKKT 71/08 D SKKT 72/08 D1> SKKH 71/08 D

Contextual Info: PD- 9.1577A International Rectifier IGR IRG4PH40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc=10MS, V c c = 720V , T j = 125°C,

CNX48 U

Contextual Info: N AUER PHILIPS/DISCRETE 5SE D bbS3T31 QDa01fl3 1 CNX48 T - V - g f OPTOCOUPLER Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line D IL envelope. Features

BUK657-500C

Contextual Info: bbS3T31 0030710 T • 5SE D N AUER PHILIPS/DISCRETE PowerMOS transistor Fast Recovery Diode FET BUK657-500A BUK657-500B BUK657-500C T -3 < M 3 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.

Contextual Info: DAF 811 A /K . DAF 814 A/K Fast Switching Diode Arrays Schnelle Dioden Sätze Nominal power dissipation Verlustleistung 1-1 1.2 W Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Glasgehäuse 100.400 V 24 x 3 x 5.1 [mm] Weight approx.

Contextual Info: *u% o UNITRQDE UC1625 UC2625 UC3625 Brushless DC Motor Controller DESCRIPTION FEATURES Drives Power MOSFETs or Power Darlingtons Directly 50V Open Collector High-Side Drivers Latched Soft Start High-speed Current-Sense Amplifier with Ideal Diode The UC1625 and UC3625 motor controller ICs integrate most of

Contextual Info: SCHOTTKY BARRIER DIODE C20T06Q C20T06Q-11A 22A/60V GCQ20A06 FCQ20A06 FEATURES o 1SQUARE-PA k I TO-263AB SMD Packaged in 24mm Tape and Reel : C20T06Q O Tabless TO-220: C20T06Q-11A o T0-220AB : GCQ20A06 o T0-220AB Fully Molded Isolation : FCQ20A06 o Dual Diodes - Cathode