DIODE OAS Search Results

5s70

Abstract: 1N3604 F100 tl1507
Contextual Info: 1 IM 3604 Silicon planar diode The silicon planar diode 1 N 3 6 0 4 in the gla ss package 51 A 2 D IN 41 8 8 0 D O -7 is designed for use as high-speed sw itching diode as well as for general sw itching applications. The planar technique results in short reverse recovery time, small

TC124A

Contextual Info: U î k 7 P - p ; * # < 7 | - - k y -O M ü tipe Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS S F 10L C 20U 200V 10A • f iy - i'x • trr3 5 n s •5 S ± :? J1 Æ -Jb h ' • S Ê liiK E S K V 'K E E •SR Bâü m y u - T U 'f i i mmm. oAs assa

SHINDENGEN DIODE

Contextual Info: S U Â T /W ^ Surface Mounting Device ÿ 3 7 h — Schottky Barrier Diode K Diode Array mïïrta m S1ZAS6 OUTLINE DIMENSIONS Case : 1Z Unii : mm Weight O.Lïp $ Ç> 12 a AA 60V 1.2A D @ (3 - HI T- i1 •S M D IV pe No. : ~ : — : + : - CD Mal* code

Contextual Info: Schottky Barrier Diode Twin Diode mtmm SG30SC6M o u t lin e Unit : mm Package : FTO-220G 60V 30A nybà J# 0 t| Feature Tj=150°C • Tj=150°C • Full Molded • High lo Rating-Small-PKG Main Use • Switching Regulator • DC/DC D y J t - 9 • DC/DC Converter

Contextual Info: Surface Mounting Device y b V T & ' f Schottky Barrier Diode # — F y - o m WÆ Twin Diode OUTLINE DIMENSIONS DF40SC3L Case : STO-220 10.2 = 02 n , 30V 40A Type No. ta tte r 2.4 ±0-a 40SC3L •SM D • T j 150TC Ü r n • Ê V f = 0 .4 5 V # P 0 .1 ±fil

smd diode schottky code marking 2F

Abstract: DG1N15A smd diode 5H J532 DIODE MARKING 9Y 1N711
Contextual Info: Schottky Barrier Diode Single Diode m tm DG 1 N 15A Weight 0.011 g Typ 3.5 CD r Feature a 1Ultra-small SMD • i2j®sy=0.8mm 1Ultra-thin PKG=0.8mm • < S I r = 0 .0 5 m A 1Low Ir = 0 .0 5 itiA L»[c_ <. Lì m (?) I |N 7 1 1 • ^JvS S M D • Unit-m m

Contextual Info: '> 3 7 v o w Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS D5SC4M Case : ITO-220 40V 5A • T j 15 0 t: • P rrsm •7 J L Æ -J b K •S R S S •D C /D C □ » { - ; ? •mm. y - A , oa«§§ •aa, m x-sjim s • ü Ê tè ü RATINGS • Îê fc fU ^ Æ fê

FtZ MARKING CODE

Abstract: D25SC6M D25SC6MR
Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE D25SC6MR Unit :m m P a c k a g e : IT O -3 P W eight 4.3k T y p 15 60V 25A 5.5 n-yt-m XW ) D a te code Feature • Tj=i5(rc • Tj=150°C • P r r s m P K t? • P rrsm R ating • ttU K S B • High lo Rating • 7 J I Æ - J L/K

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

Contextual Info: s e MIKRO n zurück V rsm V rrm dv/ Itrms (maximum value for continuous operation V drm dt)cr 75 A V V V/|xs 500 400 500 SEMIPACK 1 Thyristor / Diode Modules Itav (sin. 180; T oase = 68 °C) 48 A - - SKKH 41/04 D - 700 600 500 SKKT 41/06 D SKKT 42/06 D

SMP1300

Abstract: P1321 MP-130 P-1302 P1302 mp132
Contextual Info: ESAlpha Plastic Packaged Surface Mount PIN Diodes SMP1300 Series Features n Industry Standard Outlines SOD-323 * SOT-23 SOT-143 Designed for High Performance Switches & Attenuators Single and Dual Diode Configurations Maximum Ratings Low Inductance Designs for Microwave

Contextual Info: SEMIKRON zurück V rsm V rrm dv/ Itrms (maximum value for continuous operation V drm dt)cr 125 A V V V/|xs 700 600 500 SKKT 71/06 D 900 800 SEMIPACK 1 Thyristor / Diode Modules Itav (sin. 180; T oase = 78 °C) 80 A - - SKKH 72/06 D 500 SKKT 71/08 D SKKT 72/08 D1> SKKH 71/08 D

Contextual Info: PD- 9.1577A International Rectifier IGR IRG4PH40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc=10MS, V c c = 720V , T j = 125°C,

CNX48 U

Contextual Info: N AUER PHILIPS/DISCRETE 5SE D bbS3T31 QDa01fl3 1 CNX48 T - V - g f OPTOCOUPLER Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line D IL envelope. Features

Contextual Info: DAF 811 A /K . DAF 814 A/K Fast Switching Diode Arrays Schnelle Dioden Sätze Nominal power dissipation Verlustleistung 1-1 1.2 W Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Glasgehäuse 100.400 V 24 x 3 x 5.1 [mm] Weight approx.

Contextual Info: *u% o UNITRQDE UC1625 UC2625 UC3625 Brushless DC Motor Controller DESCRIPTION FEATURES Drives Power MOSFETs or Power Darlingtons Directly 50V Open Collector High-Side Drivers Latched Soft Start High-speed Current-Sense Amplifier with Ideal Diode The UC1625 and UC3625 motor controller ICs integrate most of

Contextual Info: s e M IK R O n zurück SEMIPACK 1 Thyristor / Diode Modules Itrms m axim um va lu e fo r c o n tin u o u s o p e ra tio n (dv/ V rsm V rrm 50 A V drm dt)cr Itav (sin. 180; T oase = 68 °C) V V V/|xs 32 A 500 400 500 700 600 500 SKKT 26/06 D 900 800 1300 1200

MG15D4GM1

Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG15D4GM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The D r ain is Isolated from Case. . U MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . L o w D r a in-Source ON Resistance

t930

Abstract: ERC62-004 T151 T460
Contextual Info: E R C 6 2 '> a y h + - /< y 7 r ^ - 0 4 i o a * - K SCHOTTKY BARRIER DIODE • 4 $ ft : Features • <&vF Low VF Super high speed switching. Connection Diagram High reliability by planer design. : Applications High speed power switching. ■ÆfèfcîNMÉ : Maximum Ratings and Characteristics

ERN04-20

Abstract: ERN04 AA180
Contextual Info: E R N 4 4 o o a : Outline Drawings GENERAL-USE RECTIFIER DIODE J l : : Features • “h D iff u sed -j u n ctio n • iUJSEScttfllja Compression-contact type : A p p lic a tio n s • Si Buttery chargers Brush-less generators • ft* . Electric railway and chemical use rectifiers

Contextual Info: S EM IK R O N zurück V rsm V rrm V drm V V 1300 1200 SKNH 56/12 E 1500 1400 SKNH 56/14 E 1700 1600 SKNH 56/16 E 1900 1800 SKNH 56/18 E SEMIPACK 1 Modules with Thyristor and Free-Wheeling Diode ld P 3/120, Tamb = 45 °C 70 A Symbol Conditions SKNH 56 SKNH 91 1>

DIODE 804

Abstract: m80-1364 16045TV PBYR16045T M3315 pbyr 10-5 PBYR16035TV PBYR16040TV PBYR16045TV MAX900A
Contextual Info: PBYR16035TV PBYR16040TV PBYR16045TV DEVELOPMENT DATA Th!s data sheet contains advance in fo rm a tio n and specifications are subject to change w ith o u t notice. PH IL I P S sbE t> INTERNATIONAL m 711002b p o m a o b oas m phin -T -0 3 -2 .1 SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES

Contextual Info: se MIKRO n zurück Absolute Maximum Ratings Values Symbol Conditions 1 Units V cE S V cG R lc IcM = 20 Toase = 25/80 °C Tease = 25/80 °C; tp = 1 ms R ge V ges Ptot per IGBT, T oase = 25 °C Tj, Tstg) Visol humidity climate AC, 1 min. DIN 40040 DIN IEC 68T.1

semikron skm 75gb

Contextual Info: se MIKRON zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR Units 600 600 100 / 75 2 0 0 /1 5 0 ±20 350 -4 0 . + 125) 150 2500 Rge = 20 Toase = 25/75 °C Tease = 25/75 °C; tp = 1 ms lc IcM V ges per IGBT, T oase = 25 °C Ptot Tj, (Tstg)