DIODE OAR Search Results

Contextual Info: PHILIPS CBL1 Double diode output pentode Duodiode-penthode de sortie Doppeldiode-Endpentode Heating : indirect by A.C. or D.C.; series supply Chauffage: indirect par C.A. ou C.C.; alimentation en série Heizung : indirekt durch Wechsel­ oder Gleichstrom;

Contextual Info: Tem ic BA982.BA983 Semiconductors Silicon Planar Diodes Features • Low differential forward resistance • Low diode capacitance • High reverse impedance • Quadra M elf package Applications Band switching in VH F-tuners Absolute Maximum Ratings Tj = 25 °C

MR1-1600

Abstract: MR1-1200 MR1-1400 rectifier diode 20 amp 1200 volt
Contextual Info: MR1-1200 SILICON MR1-1400 MR1-1600 HIGH VOLTAGE LEAD MOUNTED SILICON RECTIFIERS A XIA L LEAD SILICON RECTIFIERS 1200,1400,1600, VOLTS 1 AMPERE . . . designed fo r television "da m p e r" diode service and other high voltage industrial/consum er applications.

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

RJSE1R8090B-R

Contextual Info: Si3400/Si3401ISO-EVB I S O L A T E D E VALU A TION B OARD F OR T H E Si3400 AND Si3401 1. Description The Si3400 and Si3401 isolated evaluation boards Si3400ISO-EVB Rev 1.3 and Si3401ISO-EVB Rev 1.3 are reference designs for power supplies in Power over Ethernet (PoE) Powered Device (PD) applications. The Si3400

Contextual Info: Si 3 4 6 0 - EVB Si3460 E VALUATION B OARD U SER ’ S G U I D E 1. Introduction This document is intended to be used in conjunction with the Si3460 data sheet for designers interested in: An Pl No ea t se Re C com on si me de n r S de i3 d f 46 or 2 N

transistor array

Abstract: DARLINGTON TRANSISTOR ARRAY "Darlington Transistor" npn darlington array transistor ta8435 Darlington transistor DIP-16 CPP-25 DIP16
Contextual Info: A4 Application Unipolar Stepping motor driver Bipolar Hawftch Bipolar 1 chip for micfocaeeen» 71 Type No. TD62064AP/AF TD62064BP-1/BF TD62164AP/AF TD62164BP/BF TD62083AP TD62084AP TD62107P TD62107BP TD62707AP TD62308AP/AF TD62308BP-1 TD62308BF TD62318AP/AF

Contextual Info: MOTOROLA O rder this docum ent by M TB50P03HDL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB50P03HDL HDTMOS E-FET™ High Energy Power FET D2PAK for Surface Mount Motorola Preferred Device TM OS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS on = 0.025 OHM

2sc9018

Abstract: Si4827-DEMO
Contextual Info: Si4827-DEMO Si4827 D EMO B OARD U SER ’ S G UIDE 1. Features ATDD analog tune and digital display FM/AM/SW radio Worldwide FM band support from 64 MHz to 109 MHz with 5 default sub-bands: FM1 87—108 MHz (Demo Board Default) 86.5—109 MHz

Contextual Info: PWM/PFM STEP-DOWN COMBINATION REGULATOR/CONTROLLER TC120 PWM/PFM STEP-DOWN COMBINATION REGULATOR/CONTROLLER FEATURES GENERAL DESCRIPTION • TC120 is a 300 KHz PFM/PWM step-down Buck DC/ DC regulator/controller combination for use in systems operating from two or more cells, or in line-powered applications. It uses PWM as the primary modulation scheme, but

Contextual Info: FDS9933A Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified M O SFETsare produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored to m inimize the

BATERY protection

Abstract: FDY3000NZ SC89
Contextual Info: January 2007 FDY3000NZ tm DualN-Channel2.5V Specified PowerTrench“ MOSFET GeneralDescription Features Thi s Dual N-Channel MOSFET has been desi gned usi ng Fai rchi l d Semi conductor’ s advanced Power Trench process to opti mi ze the RDS ON @ VGS = 2.5v.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA653TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm FEATURES 4.0 V drive available Low on-state resistance RDS(on)1 = 165 mΩ MAX. (VGS = −10 V, ID = −1.5 A) RDS(on)2 = 267 mΩ MAX. (VGS = −4.5 V, ID = −1.5 A)

IN5817 schottky diode symbol

Abstract: IN5817 diode Samsung Tantalum Capacitor TC1201 pin configuration transistor 2N2222 tc120x in5817 2N2222 NPN Transistor features A 673 C2 transistor 595D
Contextual Info: TC120 PWM/PFM Step-Down Combination Regulator/Controller FEATURES GENERAL DESCRIPTION • TC120 is a 300 KHz PFM/PWM step-down Buck DC/DC regulator/controller combination for use in systems operating from two or more cells, or in line-powered applications. It uses PWM as the primary modulation scheme, but

LM1205N

Abstract: 116816 crt 7 pin monitor circuit diagram rs9 ccd crt monitor circuit diagram differential pair cascode differential pair cascode darlington TRANSISTOR C 6090 LM1205 LM1207
Contextual Info: a t i o n a l S e m i c o n d u c t o r & LM1205/LM 1207 130 MHz/85 MHz RGB Video Amplifier System with Blanking General Description The L M 12 0 5 /L M 1207 is a very high frequency video am plifi­ er system intended fo r use in high resolution RGB m onitor

Ha 100b

Abstract: BUK452-100A BUK452-100B T0220AB buk452
Contextual Info: Philips Components BUK452-100A BUK452-100B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: I S OC OM COMPONE NTS LTD 75C D • 4flabS10 □□□□Gt.a T I S ■ ISO_ T-41-83 H24A1 H24A2 Optically Coupled Isolators FEATURES ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise noted • 4500 V Isolation • 2mm (min.) Internal Separation • 4 Pin Dual-In-Line Package

1N4148

Abstract: LMV331 MMBTA06LT1 SMH4811
Contextual Info: SMH4811 Distributed Power Hot-Swap Controller Preliminary Programmable Circuit Breaker Function – Programmable Over-current Filter – Programmable Quick-Trip Circuit Breaker Values • 2.5V and 5.0V reference outputs – Easy Expansion of External Monitor Functions

Contextual Info: bq24620 SLUS893A – MARCH 2010 – REVISED OCTOBER 2011 www.ti.com Stand-Alone Synchronous Switch-Mode Lithium Phosphate Battery Charger With Low Iq Check for Samples: bq24620 FEATURES APPLICATIONS • • • • • • • • • • • LODRV PACKAGE

2x1N4148

Abstract: SMH4803 POWER MOSFET SMH4803A
Contextual Info: SMH4803 Distributed Power Hot-Swap Controller Preliminary Programmable Circuit Breaker Function – Programmable Over-current Filter – Programmable Quick-Trip Circuit Breaker Values – Programmable Circuit Breaker Mode • Duty-Cycle Mode • FEATURES

Contextual Info: MOTOROLA O rder this docum ent by M TB52N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB52N06V TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance

Contextual Info: 19-0225; Rev 1; 7/94 5V /3.3V /3V or Adjustable, High-Efficiency, Low IQ, Step-Down DC-DC Controllers These devices use m iniature external com ponents. Their high switching frequency up to 300kHz allows for less than 9mm diameter surface-mount inductors.

P3410

Contextual Info: a Preliminary Technical Data FEATURES All-In-One Synchronous Buck Driver OnePWMSignalGeneratesBoth Drives Anti-Cross-Conduction Protection Circuitry ProgrammableTransition Delay Synchronous Override Control Undervoltage Lockout Programmable Overvoltage Shutdown

esr meter circuit diagram

Abstract: Motorola 6502 marking SH SOT23 mosfet sot23-5 package marking EM a737
Contextual Info: Semiconductor, Inc. TC105 PFM/PWM STEP-DOWN DC/DC CONTROLLER FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The TC105 is a step-down Buck switching controller that furnishes output currents of up to 1A (max) while delivering a typical efficiency of 92%. The TC105 normally