DIODE OAR Search Results

BCS028N06NS

Abstract: 028N06NS DC1502
Contextual Info: DEMO MANUAL DC1502A LTC4359HDCB 12V/20A Ideal Diode with Reverse Input Protection DESCRIPTION Demonstration circuit 1502A showcases the LTC 4359 ideal diode controller with reverse input protection. The board includes two independent LTC4359 ideal diode circuits, sharing a common ground and operating over a

MMBD201

Abstract: BD201 bd2010 BD301 MMBD2010 318D-03 MMBD101 MMBD2010T1 DIODE WJ SOt23 MMBD3010T1
Contextual Info: MOTOROLA SEMICONDUCTOR — TECHNICAL Order this document bv MMBDIOIOLT1/D DATA MMBDIOIOLTI MMBD2010T~ Switching Diode Pad of the GreenMneTM Portfolio of devices with energy+onsewing traits. This switching diode has the following features: Very Low Leakage s 500 PA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Sw itching Diode BAW156LT1 This switching diode has the following features: Motorola Preferred Device Low Leakage Current Applications Medium Speed Switching Times Available in 8 mm Tape and Reel Use BAW156LT1 to order the 7 inch/3,000 unit reel

2N 3904 transistor

Abstract: lm 3904 3904 transistor
Contextual Info: Semiconductor LM84 Diode Input Digital Temperature Sensor with Two-Wire Interface R egister read back capability General Description The LM84 is a rem ote diode tem perature sensor, Deita-Sigm a analog-to-digital converter, and digital over-tem perature detector with an SM Bus interface. The

Marking J30 SOT23

Abstract: 4014C g0750
Contextual Info: M O TO R O LA O rder this docum ent by MMBD1010LT1/D SEMICONDUCTOR TECHNICAL DATA L G r e e n i n e MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenUne™ Portfolio of devices with energy-conserving traits. This switching diode has the following features:

9962 GH

Abstract: L9932 l9933 9945 A transistor DTL 9930 9936 GN 9962 6H fairchild 9930 integrated circuits data inverter circuit diagram 9936 FD100 diode
Contextual Info: DIODE-TRANSISTOR MICROLOGIC INTEGRATED CIRCUITS A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRODUCT MILITARY TEMPERATURE RANGE: - 5 5 ° C to + 1 2 5 ° C GENERAL DESCRIPTION The Fairchild 9930 series of Diode Transistor Micrologic is a member of the Compatible Current Sinking Logic CCSL family designed for use in

Contextual Info: SEM ICONDUCTOR LL4148 TECHNI CAL DATA SIL IC O N E PIT A X IA L PLAN AR DIODE ULTRA HIGH SPEED SW ITC H IN G A PPLICATION. FEA T U RE S • Fast switching diode I M A X IM U M RA TING Ta=25°C CHARACTERISTIC Maximum Peak Reverse Voltage Reverse Voltage Average Rectified Current

131-G W J 60

Abstract: smd Marking OU smd marking m4 diode smd k9 DIODE mark k9 M2FM3 max5536
Contextual Info: Schottky Barrier Diode wnnw OUTLINE Single Diode M2FM3 U n it t m m Package : M2F W e ig h t 0.072# T y p 1 ) '/ — K 30V 6A v—9 Feature a — w — : • /J ^ S M D • Sm all S M D • V f=0.46V • filR=0.2mA • Low V f =0 .4 6 V • • Reverse connect protection for

9180A

Contextual Info: Ordering number:ENN6273 Schottky Barrier Diode SBS005 30V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Package Dimensions unitimm 1293 [SBS005] Features • Low forward voltage (If.-0.5A, Vp max=0.40V)

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

Contextual Info: MIL-S-19500/46fl ER AMENDMENT 2 AMENDMENT 1 29 March1972 MILITARYSPECIFICATION SEMICONDUCTOR DEVICE DIODE,GALLIUMARSENIDE, MIXER TYPES1N5764,1N5764M,lN5764fviR I Thisamendment formsa partof MILITARYSPECIFICATION MIL-S-19500/460(ER), dated19 November1971,and is approvedby the U.S.ArmyElectronics

1N5825

Abstract: diode 1N5825 N5824 1n6823 1N5824 1N5823 marking Bq sot23 1N5824 ON
Contextual Info: 1N5823,1N5824 1N5825 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5823 and 1N5825 are Motorola Preformi Devices Designer’s Data Sheet SCHOTTKY BARRIER RECTIFIERS Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.

Contextual Info: PHILIPS CBL1 Double diode output pentode Duodiode-penthode de sortie Doppeldiode-Endpentode Heating : indirect by A.C. or D.C.; series supply Chauffage: indirect par C.A. ou C.C.; alimentation en série Heizung : indirekt durch Wechsel­ oder Gleichstrom;

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

Contextual Info: Tem ic BA982.BA983 Semiconductors Silicon Planar Diodes Features • Low differential forward resistance • Low diode capacitance • High reverse impedance • Quadra M elf package Applications Band switching in VH F-tuners Absolute Maximum Ratings Tj = 25 °C

zener diode p6ke250a

Abstract: F6KE F6KE180A Diode P6KE 8A F6KE180 PSKE P6KE10 P6KE15 equivalent P6KE11 P6KE11A
Contextual Info: JGD O P6KE SERIES TRANSIENT VOLTAGE SUPPRESSORS DIODE VOLTAGE RANGE 6.8 to 400 Volts 400 Watts Peak Power DO-15 FEATURES .140 3.6 .104(2.6) DIA. * Plastic package has underwriters laboratory flammability classifications 94V-0 *i500W surge capability at 1ms

MR1-1600

Abstract: MR1-1200 MR1-1400 rectifier diode 20 amp 1200 volt
Contextual Info: MR1-1200 SILICON MR1-1400 MR1-1600 HIGH VOLTAGE LEAD MOUNTED SILICON RECTIFIERS A XIA L LEAD SILICON RECTIFIERS 1200,1400,1600, VOLTS 1 AMPERE . . . designed fo r television "da m p e r" diode service and other high voltage industrial/consum er applications.

BUK657

Abstract: BUK657-500A BUK657-500B BUK657-500C T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE 5SE D ^53^31 QD20710 T PowerMOS transistor Fast Recovery Diode FET BUK657-500A BUK657-500B BUK657-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

RF2312 PCBA

Contextual Info: » • e MICRODEVICES RF2312 LINEAR GENERAL PURPOSE AMPLIFIER Typical Applications • CATV Distribution Amplifiers Laser Diode Driver • Cable Modems Return Channel Amplifier • Broadband Gain Blocks Base Stations Product Description The RF2312 is a general purpose, low cost high linearity

TPS805

Abstract: TLN107A
Contextual Info: TOSHIBA TPS805 TOSHIBA PHOTO IC SILICON EPITAXIAL PLANAR PHOTO IC FOR PHOTO INTERRUPTER TPS805 Unit in mm 4 PHOTOELECTRIC COUNTER POSITION AND ROTATIONAL SPEED SENSOR +0 TPS805 is a photo IC integrating photo diode, amplifier circuit and waveform shaping circuit in 1 chip.

1N430A

Abstract: 1N430B 1N433A HP 4066 1N433B hp 5960 marking BVV 120-SECOND
Contextual Info: MIL-S-1950 0/3 35 EL 28 June 1 9 6 5 MILITARY SPECIFICATION SEMICONDUCTOR DIODE, SILIC O N , VOLTAGE REFERENCE (TEMPERATURE-STABLE) TYPES 1N430A, ÎN 4308 1. SCOPE 1.1 Scope, - This specification covers the detail requirements for silicon, low1. i _ _ j._ 1

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

N313

Abstract: TLP3521 LTML
Contextual Info: TLP3521 GaAs IRED S PHOTO-TRIAC TRIAC DRIVER PROGRAMMABLE CONTROLLERS AC-OUTPUT MODULE SOLID STATE RELAY The TOSHIBA TLP352I crossing consists of a zero voltage turn-on photo-triac optically coupled to a gallium arsenide infrared emitting diode in a 16 lead plastic DIP package.

g118ap

Abstract: G118 diode EE d129 st s466
Contextual Info: W T Siliconix J Q P incorporated 1 Q • ■w Monolithic 6-Channel Enhancement-type MOSFET Switch FEATURES BENEFITS APPLICATIONS • Internal Zener Diode Protects the Gate • • Switching Analog Signals • Multiplexing • Six Switches Per Chip • Designed to Operate with