DIODE NI Search Results

"Schottky Diode"

Abstract: 1N5822 data sheet
Contextual Info: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0055A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0055A Type：1N5822 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag

schottky barrier diode b22

Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

schottky diode

Contextual Info: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0060A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0060A Type：SB340 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag

Schottky Diode 40V 2A

Abstract: "Schottky Diode"
Contextual Info: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0045A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0045A Type：SB240 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag

SK-0028A

Abstract: Schottky diode Die IR SK-002 1n5819 die schottky diode
Contextual Info: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0028A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0028A Type：1N5819 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag

Contextual Info: HYBRID I.C.S "Hi-Net" n ic R ic o n Diode Arrays High-speed switching diode arrays and high voltage-withstand diode arrays are of NICHICON's standard series. They are combined to be conveniently used for both binary and decimal systems. High-speed series is ideal for computer peripherals, control boards and general

Thyristor ABB ys 150

Contextual Info: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

9315b

Abstract: SLD201V SLD201V3
Contextual Info: SLD201U-3/V-3 SONY« 50mW High Power Laser Diode Package Outline Description SLD201 U -3/V-3 is a gain-guided highpower laser diode fabricated by MOCVD. U nit: mm SLD201U-3 Features • Low noise S /N = 8 0 dB Typ. at 5 mW. Structure GaAIAs double-hetero visible laser diode.

6098-0126

Abstract: 6098-0 diode c02 D0D82345-32010D D0D82345-20060C MT Series 6098-0061 6098-0022 6098-0017 6098-0129
Contextual Info: MT SERIES 090/WITH BUILT-IN DIODE Small connector incorporating large capacity diode of high reliability and excellent heat radiation for the applications C-10 requiring rectifying function. Structure Diode Connector M Connector F Housing F Connector M with built-in chip diode

TEMPERATURE CONTROLLER with pid

Abstract: temperature control using pid controller PT-1000 sensor RTD PT-100 blue Laser-Diode PT1000 thermistor DB15F lm335 equivalent PT-100 RTD 3 wire sensor rosemount pt 100 temperature sensor
Contextual Info: www.thinkSRS.com Laser Diode Controller LDC501  Laser diode controller with integrated temperature controller LDC501 Laser Diode Controller Laser Diode Controller • 500 mA low-noise current source · Low drift <10 ppm/°C · 1.1 MHz modulation · CC & CP mode dynamic switching

ad130

Abstract: D1103 d1105 MMAD1109 AD1107
Contextual Info: MOTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA M onolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching

diode 2500A

Contextual Info: Technische Information / Technical Information Schnelle beschaltungslose Diode Fast Hard Drive Diode D 931 SH 65T SH Features: • Speziell entwickelt für beschaltungslosen Betrieb • Specially designed for snubberless operation • Niedrige Verluste, weiches Ausschalten

integrated circuits equivalents list

Abstract: digital phase shifters HPND-0002 hydrofluoric acid HPND0002 HSMP3810 5965-9143E eutectic
Contextual Info: HPND-0002 Small Signal RF PIN Diode Chips for Hybrid Integrated Circuits Data Sheet Description Features These PIN/NIP diode chips are specifically designed for hybrid applications requiring thermosonic or thermocompression bonding techniques. The top metallization

IDG 600

Abstract: M61880FP 20P2N-A M61880
Contextual Info: M61880FP Laser Diode Driver/Controller REJ03F0068-0100Z Rev.1.0 Sep.19.2003 Description The M61880FP is a laser diode driver/controller that performs drive and laser power control of a type of semiconductor laser diode in which the semiconductor laser diode anode and monitoring photodiode cathode are connected to the stem.

hp 3080 diode

Contextual Info: Small Signal RF PIN Diode Chips for Hybrid Integrated Circuits Technical Data HPND-0001 HPND-0002 Features Description • Thermocompression/ Thermosonically Bondable These PIN/NIP diode chips are specifically designed for hybrid applications requiring thermosonic or thermocompression

DIODE D2

Abstract: diode bandfilter Diode d3 schema foto diode DE diode
Contextual Info: I * DRIEVOU DIGE DIODE De EÀB 1 is een drievoudige diode, voor gebruik in de bekende drie-dioden schakeling, die een ideale weergaye bevordert. Zij bestaat uit een gem eenschappelijke kathode, w aarom heen drie diodeplaatjes zijn aangebracht. Diode d3 w ordt gebruikt voor de detectie, diode d1 zorgt voor de regelspanning

Contextual Info: CD41_99B, CS41_99B CN41_99B, CC41_99B POW-R-BLOKTM Dual & Single Diode Isolated Module 100 Amperes / Up to 1800 Volts Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING Powerex Dual Diode & Single Diode

CD41

Abstract: CD411699B CN4-19
Contextual Info: CD41_99B, CS41_99B CN41_99B, CC41_99B POW-R-BLOKTM Dual & Single Diode Isolated Module 100 Amperes / Up to 1800 Volts Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING Powerex Dual Diode & Single Diode

CD61

Abstract: CS61 powerex cd61
Contextual Info: CD61_16B, CS61_16B CN61_16B, CC61_16B POW-R-BLOKTM Dual & Single Diode Isolated Module 160 Amperes / Up to 2200 Volts Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING Powerex Dual Diode & Single Diode

powerex pow-r-blok

Abstract: powerex cd61
Contextual Info: CD61_16B, CS61_16B CN61_16B, CC61_16B POW-R-BLOKTM Dual & Single Diode Isolated Module 160 Amperes / Up to 2200 Volts Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING Powerex Dual Diode & Single Diode

MA4E2038

Abstract: handling of beam lead diodes police radar detector M541
Contextual Info: Millimeter Wave GaAs Beam Lead Schottky Barrier Diode MA4E2038 MA4E2038 Millimeter Wave GaAs Beam Lead Schottky Barrier Diode 1,2 Package Outlines Features • • • • • Low Series Resistance Low Capacitance High Cut off Frequency Silicon Nitride Passivation

URU100120

Abstract: RURU100120
Contextual Info: RURU100120 Data Sheet January 2000 File Number 3545.3 100A, 1200V Ultrafast Diode Features The RURU100120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial

RURU50100

Contextual Info: RURU50100 Data Sheet January 2002 50A, 1000V Ultrafast Diode Features The RURU50100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: RURG80100 Data Sheet January 2002 80A, 1000V Ultrafast Diode Features The RURG80100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.