DIODE N10 Search Results

10N100U1

Abstract: N100A ixgh 1500
Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ

ixgh 1500

Abstract: 17N100U1 17N100AU1 AC motor speed control 17n10
Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ

17n100a

Abstract: NC2030 17N100AU1
Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

N10G

Abstract: t12n10g NTD12N10G t12 n10g NTD12N10 369D NTD12N10T4 NTD12N10T4G transistor N10G
Contextual Info: NTD12N10 Preferred Device Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature

Contextual Info: Ordering number:EN4667 PNP Epitaxial Planar Silicon Transistors 2SB1527 Compact Motor Driver Applications Features Package Dimensions • Low saturation voltage. · Contains a diode between collector and emitter. · Contains a bias resistor between base and emitter.

sot-363 MARKING n10 diode

Abstract: IMN11 SOT-363 marking n10 transistor marking N1 IMN10 IMP11 UMN11N UMP11N marking N11 diode UMN1N
Contextual Info: FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / UMN1N / UMP1N / UMN11N / UMP11N Diodes Switching diode FMN1 / FMP1 / IMN10 / IMN11 / IMP11 UMN1N / UMP1N / UMN11N / UMP11N zExternal dimensions Units : mm FMN1 / FMP1 UMN1N / UMP1N +0.1 −0.06 (All leads have the same dimensions.)

TSOP-66

Abstract: TSOP-6 Marking
Contextual Info: WIMN10 Surface Mount Switching Multi-Chip Diode Array MULTI-CHIP DIODES 100m AMPERES P b Lead Pb -Free 80 VOLTS Features: * Ultra High Speed Switching * Ultra-Small Surface Mount Package * For General Purpose Switching Applications * High Conductance Power Dissipation

Contextual Info: ITF86116SQT TM Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.3 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode

LT1009CZ

Abstract: LM136 LT1009 NCV1009 NCV1009D NCV1009DR2 NCV1009Z N3 smd 2492 smd resistor
Contextual Info: NCV1009 2.5 Volt Reference The NCV1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on-chip trimming which minimizes voltage tolerance and

DIODE smd marking N7

Abstract: CS1009 CS1009GD8 CS1009GDR8 CS1009GZ3 LM136 LM136Z LT1009 LT1009CZ
Contextual Info: CS1009 2.5 Volt Reference The CS1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on–chip trimming which minimizes voltage tolerance and temperature

n15 to-92

Abstract: LT1009CZ NCV1009 NCV1009Z LM136 LT1009
Contextual Info: NCV1009 2.5 Volt Reference The NCV1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on-chip trimming which minimizes voltage tolerance and

zener n7

Abstract: DIODE smd marking N7 LM136 LM136Z LT1009 LT1009CZ NCV1009 NCV1009D NCV1009Z
Contextual Info: NCV1009 2.5 Volt Reference The NCV1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on−chip trimming which minimizes voltage tolerance and

RLZ22B

Abstract: RLZ22b zener diode brown brown green zener diode
Contextual Info: RLZ22B Diodes Zener diode RLZ22B zApplications Voltage regulation zExternal dimensions Unit : mm (第１色帯) CATHODE BAND (1st COLOR BAND) (2nd COLOR BAND) (第２色帯) (3rd(第３色帯) COLOR BAND) 0.4 0.4 φ1.4±0.1 zFeatures 1) Grass seald envelope. (LLDS)

GCS9030

Abstract: STD8N10L 066AA 100VDS
Contextual Info: rz Z ^ 7/ S C S -T H O M S O N IKJDra IILIOT©raDSl STD8 N10L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V dss STD8N10L 100 V RDS on < 0.33 Id n % 8A • . . . . . . . TYPICAL R[)S(on) = 0.25 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

InGaAs apd photodiode

Abstract: QTH-030-01-L-D-A GR-253 OC48 V23816-N1018-C342 V23816-N1018-L342 InGaAs APD 28 pin samtec connector QSH ingaas apd preamp receiver -20 1.25 TX laser
Contextual Info: V23816-N1018-C342/L342 * 3.3 V, 4-Line LVDS Parallel 2.5 GBd Transponder OC-48 SONET/SDH Long Reach (LR-2) up to 80 km Preliminary Dimensions in mm [inches] 1) V23816-N1018-L342 A 1) First protopypes will have 76.2 mm [3.0 inch] max. length. All 4 mounting holes will be on the same position for drop

QTH-030-01-L-D-A

Abstract: L322 GR-253 OC48 V23816-N1018-C322 V23816-N1018-L322 LVDS connector 20 pins QTH-030-01
Contextual Info: V23816-N1018-C322/L322 * 3.3 V, 4-Line LVDS Parallel 2.5 GBd Transponder OC-48 SONET/SDH Intermediate Reach (IR-1) up to 15 km Preliminary Dimensions in mm [inches] V23816-N1018-L322 • • • • • • Laser bias monitor RX power monitor output Loopback operating modes

GR-253

Abstract: OC48 QTH-030-01-L-D-A V23816-N1018-C312 V23816-N1018-L312 samtec connector QSH
Contextual Info: V23816-N1018-C312/L312 * 3.3 V, 4-Line LVDS Parallel 2.5 GBd Transponder OC-48 SONET/SDH Short Reach (SR) up to 2 km Preliminary Dimensions in mm [inches] V23816-N1018-L312 • • • • • • Laser bias monitor RX power monitor output Loopback operating modes

75N10

Contextual Info: VDSS MegaMOSTMFET IXTH/IXTM 67 N10 IXTH/IXTM 75 N10 100 V 100 V ID25 RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 100 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 100 V

5N100

Abstract: 5N100A N100 1000v5a 2NA250
Contextual Info: VDSS Standard Power MOSFET ID25 IXTH/IXTM 5 N100 1000 V IXTH/IXTM 5 N100A 1000 V 5A 5A RDS on 2.4 Ω 2.0 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1000

6N90

Abstract: N100 6n10 6n100
Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Symbol Test Conditions VDSS T J = 25°C to 150°C 6N90 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 6 A IDM T C = 25°C, pulse width limited by T JM

10N100

Abstract: 12n100 N100
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 1000 V 1000 V Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C

75N10

Abstract: 67N10
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 100 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 67N10 75N10

Contextual Info: J □IXYS p VDSS ^D 25 IXTH/IXTM 67 N10 100 V IXTH/IXTM 75 N10 100 V M e g a M O S F E T 67 A 75 A D S on 25 m£2 20 mß N-Channel Enhancement Mode Symbol Test Conditions V DSS T j = 25°C to 150°C 100 V vDGR T j = 25 °C to 150°C; RGS = 1 Mi2 100 V

IXGH20N60U1

Abstract: IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB
Contextual Info: Mb E D • MböbEEb 0000^20 7 H I X Y 'PS !-! S I X Y S CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Book NO.91750A October 1991 "U1" Series IGBTs IGBTs with Interna! Fast Recovery Rectifier Features High Voltage IGBT and Anti-Parallel in One Package