6N10 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N10Z Power MOSFET 6.5 Amps, 100 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N10Z is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.

V/AA3R

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N10 Power MOSFET 6.5 Amps, 100 Volts N-CHANNEL POWER MOSFET  1 DESCRIPTION SOT-223 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.

Contextual Info: □IXYS Advanced Technical Information HiPerFET Power MOSFETs Q Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C 1000 V v DGR Td = 25°C to 150°C; RGS = 1 M£i 1000 V V GS Continuous ±20 V V GSM Transient

6N60E

Abstract: 10N100E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 6N100E 16N40E
Contextual Info: ir TMOS TM OS Power MOSFETs Plastic Packages — TO-247 TO-247 CASE 340F-03 MTW PREFIX — Isolateci TO-218 Table 4 — N-Channel TO-247 VDss (Volts) Min RDS(on) I d (Ohms) (Amps) Max Device 1000 800 600 2 3 M TW 6N100E Table 5 — N- and P-Channel Isolated TO-218

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM

6N100Q

Abstract: IXFT6N100Q
Contextual Info: HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q VDSS IXFT 6N100Q ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Q Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25

6N10G-AA3-R

Abstract: 6n10g
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N10 Preliminary Power MOSFET 6 Amps, 100 Volts N-CHANNEL POWER MOSFET „ 1 DESCRIPTION SOT-223 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N10 Power MOSFET 6.5 Amps, 100 Volts N-CHANNEL POWER MOSFET  1 DESCRIPTION TO-252 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.

IXFH6N100Q

Contextual Info: DIXYS AdvancedTechnical Information HiPerFET Power MOSFETs Q Class IXFH 6N100Q IXFT 6N100Q Voss V oo „ DS on Test Conditions Maximum Ratings T j =25°C to150°C 1000 V T j = 25°C to 150°C; Ros = 1 M fl 1000 V Continuous ±20 V V os« Transient ±30

Contextual Info: HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q VDSS IXFT 6N100Q ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

6N90

Abstract: N100
Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 6N90 900 V VDGR T J = 25°C to 150°C; RGS = 1 MW 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 6 A IDM TC = 25°C, pulse width limited by TJM

D6N0502

Abstract: D6N102-3 Si1023 D6N1023 D6N101 3-24VDC
Contextual Info: U ^ A d c Ü ^ D ( D V D C 'J U - d c £ i D 6N 0 5 0 2 D 6N102-3 6N101 « m » n m a* NO. iUl i L - - C SA : - TÜ V - : • * m \ n D6N0502 D 6N I0 2 -3 D6NI0I M íé V dc 90 120 180 V dc *i II 2.0 2.0 LO A dc *2 II 1 .2 1 .2 1 .0 A dc S ai

6N90

Abstract: IXFH6N100
Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 6N90 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 6 A IDM TC = 25°C, pulse width limited by TJM

6N90

Abstract: N100 6n10 6n100
Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Symbol Test Conditions VDSS T J = 25°C to 150°C 6N90 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 6 A IDM T C = 25°C, pulse width limited by T JM

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N10 Power MOSFET 6 Amps, 100 Volts N-CHANNEL POWER MOSFET „ 1 DESCRIPTION SOT-223 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.

6N100F

Abstract: transistor ixfh application note 125OC ixfh6n100f
Contextual Info: Power MOSFETs F-Class: MegaHertz Switching IXFH 6N100F VDSS IXFT 6N100F ID25 RDS on = 1000 V = 6A = 1.9 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings

Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 6N90 900 V VDGR T J = 25°C to 150°C; RGS = 1 MW 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 6 A IDM TC = 25°C, pulse width limited by TJM

6n10

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N10 Preliminary Power MOSFET 6 Amps, 100 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.

Contextual Info: MOTOROLA O rder this docum ent by M TW 6N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet 6N100E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 W ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 1000 VOLTS

h6n100

Abstract: h6n90
Contextual Info: n ix Y S HiPerFET Power MOSFETs IXFH /IXFM 6N90 IXFH / IXFM 6N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family V DSS ^D25 900 V 1000 V 6A 6A p DS on 1.8 Q 2.0 £2 yo 69 Symbol Test Conditions Maximum Ratings v DSS T j =25°C to 150°C

6N100F

Contextual Info: Advanced Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFH 6N100F VDSS IXFT 6N100F ID25 RDS on = 1000 V = 6A = 1.9 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr TO-247 AD (IXFH)

MOSFET 6N100

Abstract: 6n90 equivalent 6N90 transistor ixfh application note D-68623
Contextual Info: IXFH 6N90 IXFM 6N90 IXFH 6N100 IXFM 6N100 VDSS HiPerFETTM Power MOSFET IXFH/FM 6N90 900 V IXFH/FM 6N100 1000 V ID25 RDS on trr 1.8 Ω 250 ns 2.0 Ω 250 ns 6A 6A N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions

n type connector male

Abstract: 18N10W-20 6N10W-06F
Contextual Info: ATTENUATORS Type N, up to 18 GHz, 10 Watts SPECIFICATIONS: Models: XXN10W-XX, XXN10W-XXF & XXN10W-XXM Electrical: DC - 18 GHz 6, & 18 GHz 0 - 10, 12, 20, 30 & 40 dB Frequency Range Standard Freq. Values Standard dB Values* In 1 dB Increments Attenuation Accuracy