DIODE MDD 310 Search Results

D6 type diode

Abstract: D626 D635 ixys mdd D617 d632 72 diode D620 diode mdd 310 MDO 26
Contextual Info: Rectifier Diode Modules Contents Package style V rrm/V oRm V Type Page MDO 26 D6-2 MDD 44 D6-5 S Diode Modules 1999 IXYS All rights reserved MDD 56 D6-8 MDD 72 D6-11 MDD 95 D6-14 MDD 142 D6-17 MDD 172 D6-20 MDD 220 D6-23 MDD 250 D6-26 MDD 255 D6-29 MDD 310

MDD 500-12N1

Abstract: 142-12N1 26-16N1B 172-14N1 72-08N1 172-18N1 500-14N1 MDD 500-14N1 56-18N1 56-14N1B
Contextual Info: , Diode Modules Single and Double lFAV = 36-500 A Type ^th JC *FSM p mQ 0.8 6.0 K/W K/W 1.0 0.2 MDD MDD MDD MDD MDD 26-08N1B 26-12N1B 26-14N1B 26-16N1B 26-18N1B 800 1200 1400 1600 1800 36 MDD MDD MDD MDD MDD 44-08N1B 44-12N1B 44-14N1B 44-16N1B 44-18N1B 800

2x520

Contextual Info: MDD 312 IFRMS = 2x 520 A IFAVM = 2x 310 A VRRM = 1200-2200 V High Power Diode Modules VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Type 3 MDD 312-12N1 MDD 312-14N1 MDD 312-16N1 MDD 312-18N1 MDD 312-20N1 MDD 312-22N1 Test Conditions

Contextual Info: MDD 310 IFRMS = 2x 480 A IFAVM = 2x 305 A VRRM = 800-2200 V High Power Diode Modules 3 VRSM VRRM V V 900 1300 1500 1700 2100 2300 800 1200 1400 1600 2000 2200 3 Type 1 2 2 1 MDD 310-08N1 MDD 310-12N1 MDD 310-14N1 MDD 310-16N1 MDD 310-20N1 MDD 310-22N1 Symbol

diode mdd 310

Contextual Info: MDD 310 IFRMS = 2x 480 A IFAVM = 2x 305 A VRRM = 800-2200 V High Power Diode Modules 3 VRSM VRRM V V 900 1300 1500 1700 2100 2300 800 1200 1400 1600 2000 2200 3 Type 1 2 2 1 MDD 310-08N1 MDD 310-12N1 MDD 310-14N1 MDD 310-16N1 MDD 310-20N1 MDD 310-22N1 Symbol

527000

Abstract: MDD312
Contextual Info: MDD 312 IFRMS = 2x 520 A IFAVM = 2x 310 A VRRM = 1200-2200 V High Power Diode Modules VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Type 3 MDD 312-12N1 MDD 312-14N1 MDD 312-16N1 MDD 312-18N1 MDD 312-20N1 MDD 312-22N1 Test Conditions

Contextual Info: MDD 312 IFRMS = 2x520 A IFAVM = 2x310 A VRRM = 1200-2200 V High Power Diode Modules VRSM V VRRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 3 2 3 2 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 Symbol

312-22N1

Abstract: MDD312
Contextual Info: MDD 312 IFRMS = 2x520 A IFAVM = 2x310 A VRRM = 1200-2200 V High Power Diode Modules VRSM V VRRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 3 2 3 2 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 Symbol

MDD312

Contextual Info: MDD 312 IFRMS = 2x520 A IFAVM = 2x310 A VRRM = 1200-2200 V High Power Diode Modules VRSM VDSM V VRRM VDRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 3 2 3 2 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1

Contextual Info: MDD 310 IFRMS = 2x 480 A IFAVM = 2x 305 A VRRM = 800-1600 V High Power Diode Modules 3 VRSM VRRM V V 900 1300 1500 1700 800 1200 1400 1600 3 Type 1 2 2 1 MDD 310-08N1 MDD 310-12N1 MDD 310-14N1 MDD 310-16N1 Symbol IFRMS IFAVM Test Conditions TVJ = TVJM TC = 100°C; 180° sine

220-14N1

Abstract: 172-16N1 220-12n1 220-08N1 220-16n1 250-08N1 172-08N1 MDD 172-08N1 TO-240AA 4404n
Contextual Info: Diode Modules •f lFAV = 36-305 A Type *F * v S E 72 873 (M) ► New !► MOD 26-18N1B * MDD 28-16N1B 1800 1600 1400 MD026-12N1B MDD 26-08N1B 1200 ► MDD 44-18N1B* MDD 44-16N1B • MDD 44-14N1B *iwc 36 100 60 650 Ru>cie par chip per chip 4S*C 10 RIS

ixys MDD 26 - 14

Abstract: MDD 500-22N1 MDO 220-14N1 ixys MDD 172 12 DIODE 22-35 L M5 DIODE 22-35 L ixys MDD 26 14 MDD 500-12N1 ixys MDD 172 16 IXYS MCC 310
Contextual Info: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 1 MDA 72 D8 - 11 36 l l l l l MDD 26 D8 - 2 64 l l l l l MDD 44 D8 - 5 l l l l l MDD 56 D8 - 8 l l l l l MDD 72 D8 - 11 120 l l l l l l l

MDD 500-22N1

Abstract: ixys MDD 26 - 14 ixys MDD 172 12 B2U 250 S2MD 2235nm ixys MCC 700 IXYS MCC 550 mcc 550 ixys MDD 500-12N1
Contextual Info: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 4 1999 IXYS All rights reserved MDD 26 D6-2 ● ● ● ● ● MDD 44 D6-5 95 ● ● ● ● ● MDD 56 D6-8 ● ● ● ● ●

Contextual Info: MDD 312 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C; VR = 0 2 E72873 Maximum Ratings 520 310 A A t = 10 ms 50 Hz t = 8.3 ms (60 Hz)

312-22N1

Contextual Info: MDD 312 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C; VR = 0 2 E72873 Maximum Ratings 520 310 A A t = 10 ms 50 Hz t = 8.3 ms (60 Hz)

brass terminal bridge rectifier

Abstract: diode mdd 310
Contextual Info: High Power Diode Modules MDD 310 IFRMS = 2 x 480 A IFAVM = 2 x 305 A VRRM = 800 - 1600 V 3 VRSM VRRM V V 3 Type 1 2 2 1 900 1300 1500 1700 800 1200 1400 1600 Symbol IFRMS IFAVM Test Conditions TVJ = TVJM TC = 100°C; 180° sine IFSM TVJ = 45°C; VR = 0 TVJ = TVJM

mdd 42

Abstract: diode mdd 42 MD0500 MDD142-08N1 172-14N1 MDD72-12N1B MDD5 PAGE-42 MDD72 MDD72-08N1B
Contextual Info: Diode Modules, Single and Double f ‘ 1 FAV = 36-500 A MDO Type FSM New 45°C 10 ms A MDD26-08N1B MDD26-12N1B MDD26-14N1B MDD 26-16N1B MDD26-18N1B 100 60 800 1200 1400 1600 1800 36 800 59 100 100 1150 100 150 1400 p 650 m iî °C 6.0 150 K/W 1.0 0.2 24 Fig. 24 TO-240 AA

MDD 42-12-N1

Contextual Info: a s e a BRO üJN/ABB s e m i c o n Netz-Dioden-Module A3 D I GDMfl3Dfl □ □ □ D l ñ S T jp» •= 1 J - Diode Modules for mains frequency Daten pro D iode/data per diode /le s caractéristiques se rapportent à 1 diode I frms V rhm Ifavm l2t 10 ms

MDD72-18N1B

Abstract: MD0500 14N1B MDD44-16N1B MDD 500-14N1 mdd26-16 16N1B mdd56-08n1b MDD250
Contextual Info: Diode Modules, ’ TA V ¡4- - - - - - - - h rî — Î- f, r| — 4— 4- Single and Dual I 1-N- ' Ì MDO 36-560 A Type A MDA 72-08N1B MDA 72-14N1B MDA 72-16N1B MDD26-08N1B MDD26-12N1B MDD26-14N1B MDD26-16N1B MDD26-18N1B MDD44-08N1B MDD44-12N1B

MDD 500-22N1

Abstract: MDO 500-12N1 500-22N1 255-16N1 26-14N1B 500-20N1 MDD 172-14N1
Contextual Info: Diode Modules, J - L 1 » 1-N— 11 I L w 1 Single and Dual -J MDO lFAV= 36-560 A v Type I FAV @ T'C V A X 800 1200 1400 1600 1800 800 1200 1400 1600 1800 800 1200 1400 1600 1800 800 1200 1400 1600 1800_

Contextual Info: DIXYS MDD310 IFRMS High Power Diode Modules ^ FAVM 2 x 480 A 2 x 305 A vRRM 800 -1600 V Type 800 1200 1400 1600 900 1300 1500 1700 Maximum Ratings A 480 A 305 Symbol Test Conditions Urms Uavm TVJ — Tc = 100°C; 180° sine ^FSM TVJ = 45°C; VR= 0 t = 10 ms 50 Hz , sine

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

ixys MDD 172 12

Abstract: motor IG 2200 19 IXYs MCO ixys mco 255 MCC132 MCC161 MCC162 MCC170 MCC72 MCC16
Contextual Info: MCO 600 ITRMS = 928 A ITAV = 600 A VRRM = 2000-2200 V High Power Single Thyristor Module Preliminary data VRRM VDRM V V 2100 2300 2000 2200 3 Type 5 4 3 2 2 Test Conditions ITRMS ITAV TVJ = TVJM TC = 85°C; 180° sine ITSM TVJ = 45°C VR = 0 Maximum Ratings

MCC255

Abstract: motor IG 2200 19 THYRISTOR MODULE IXYS MCC 310 MCC95 MCC132 MCC161 MCC162 MCC170 MCC72 MCC94
Contextual Info: MCO 600 ITRMS = 928 A ITAV = 600 A VRRM = 2000-2200 V High Power Single Thyristor Module Preliminary data VRRM VDRM V V 2100 2300 2000 2200 3 Type 5 4 3 2 2 Test Conditions ITRMS ITAV TVJ = TVJM TC = 85°C; 180° sine ITSM TVJ = 45°C VR = 0 Maximum Ratings