DIODE MARKING JA Search Results
DIODE MARKING JA Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
|
||
| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
|
||
| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
|
||
| 9936/BCA | Rochester Electronics LLC | 9936 - Hex Inverter - Dual marked (M38510/03003BCA) |
|
||
| 54AC86/SDA-R | Rochester Electronics LLC | 54AC86/SDA-R - Dual marked (M38510R75202SDA) |
|
DIODE MARKING JA Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
BAS19
Abstract: BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR
|
Original |
bas19lt1bas20lt1bas21lt1bas19+4 | |
BAS19LT1
Abstract: sot-23 MARKING CODE JS BAS19 BAS20 BAS20LT1 BAS21 BAS21LT1 SOT23 Marking JX marking 556c
|
Original |
bas19lt1bas20lt1bas21lt1bas19+6 | |
marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
|
Original |
1n58171n8211n58181n821a+11 | |
philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
|
Original |
1n8211n821a1n8231n823a+16 | |
philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
|
Original |
1n58171n8211n58181n821a+11 | |
marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
|
Original |
1n58171n8211n58181n821a+11 | |
diode sod-123 marking code 120
Abstract: marking H1
|
Original |
400mwod-123tcbav19wtcbav20w+3 | |
diode sod-123 marking code 120
Abstract: SOD-123 marking code H3
|
Original |
400mwod-123tcbav19wtcbav20w+3 | |
Collmer SC
Abstract: 0003B55 marking WM diode
|
OCR Scan |
sc015-60003b55sc0150q03b5b+2 | |
LBAL99WT1GContextual Info: LESHAN RADIO COMPANY, LTD. LBAL99WT1G Switching Diode • We declare that the material of product 3 compliance with RoHS requirements. 1 2 DEVICE MARKING ORDERING INFORMATION . Device Marking LBAL99WT1G JF 3000 Tape & Reel JF 10000 Tape & Reel LBAL99WT1G SC-70 |
Original |
lbal99wt1gsc-70 | |
1N4148WSContextual Info: Diode Silicon Epitaxial Switching Diode Feature: • Fast Switching Diode. Marking 1N4148WS= A2 with cathode band. Absolute Maximum Ratings Description Symbol Value Continuous Reverse Voltage VR 75 VRRM 100 *IF AV 150 Surge Forward Current t <1s and Tj = 25°C |
Original |
1n4148ws | |
diode marking 74
Abstract: BAV74 Q62702-A693 DIODE BAV JS v
|
Original |
q62702-a693ot-23diode marking 74bav74+1 | |
|
Contextual Info: SC016 1.0A (200V to 600V / 1.0A ) Outline drawings GENERAL USE RECTIFIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35 ±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Marking Surface-mount device High reliability BB Applications Type name Abridged |
Original |
sc016sc016-2sc016-4sc016-6 | |
reco relayContextual Info: SC016 1.0A (200V to 600V / 1.0A ) Outline drawings GENERAL USE RECTIFIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35 ±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Marking Surface-mount device High reliability BB Applications Type name Abridged |
Original |
sc016sc016-2sc016-4sc016-6+1 | |
|
|
|||
diode code aeContextual Info: Central" CLL2003 Semiconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL2003 type isasilicon switching diode manufactured by the epitaxialplanar process, designed for applications requiring high voltage capability. Marking Code: Cathode band. |
OCR Scan |
cll2003100ha100ma200ma+2 | |
|
Contextual Info: SC016 1.0A (200V to 600V / 1.0A ) Outline drawings GENERAL USE RECTIFIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35 ±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Marking Surface-mount device High reliability BB Applications Type name Abridged |
Original |
sc016sc016-2sc016-4sc016-6 | |
DIODE g6
Abstract: LBAV74LT1
|
Original |
lbav74lt1236abdiode g6 | |
A2 DIODE SMD CODE MARKING
Abstract: PMBD353 SMD marking CODE 4F pj-25 diode
|
Original |
m3d088pmbd353sca73613514/04/pp8+3 | |
philips bav23s
Abstract: MARKING L31 SMD BAV23S L31 l31 sot23 SMD L31 BAV23S Philips smd code marking sot23 marking L31 PHILIPS
|
Original |
m3d088bav23ssca73613514/05/pp8+7 | |
|
Contextual Info: SIEMENS Silicon Switching Diode Array BGX 50 A • Bridge configuration • High-speed switch diode chip Type Marking Ordering Code tape and reel BGX 50 A U1s Q62702-G38 Pin Configuration Package1) SOT-143 4 OU00007 Maximum Ratings per Diode Parameter Symbol |
OCR Scan |
q62702-g38ot-143ou00007fl235bd5+3 | |
|
Contextual Info: SC017 1.0A (200V to 400V / 1.0A ) Outline drawings GENERAL USE RECTIFIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Marking ESD-proof Surface-mount device High reliability BH Applications Type name Abridged |
Original |
sc017sc017-2sc017-4 | |
|
Contextual Info: SC321 1.0A ( 200V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability HB Applications Code |
Original |
sc321sc321-2 | |
marking code HB
Abstract: Mark 10A
|
Original |
sc321sc321-2marking code hbmark 10a | |
ED marking code diode
Abstract: SC321-2 SC321 marking HB
|
Original |
sc321sc321-2ed marking code diodemarking hb | |