philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1n8211n821a1n8231n823a+161n8251n825a1n8271n827a1n8291n829aphilips diode ph 33dph c5v1philips diode ph 33mphilips diode ph 33jph 33dph33dph33g33g ph diodeph 33gphilips diode ph 37m
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1n58171n8211n58181n821a+111n5819marking a4t sot23a1t sot233ft sot23ph c5v1transistor t04 sot23a4t sot23transistor marking codes a4psot23 marking a1ta6t sot23marking z2p
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1n58171n8211n58181n821a+111n5819philips diode ph 33dphilips diode ph 33jphilips diode ph 33mdiode c18 ph33g ph diodec18 pha6t sot23c33phph 33gt2d diode
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1n58171n8211n58181n821a+111n5819marking a4t sot23ph c5v1t2d 79 diodec18 ph diodet2d diodetransistor marking codes a4p3ft sot23a1t sot23a4t sot23transistor t04 sot23
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Contextual Info: Comchip Low Profile SMD Bridge Rectifiers SMD Diode Specialist CGRHD101-G Thru. CGRHD107-G Reverse Voltage: 50 to 1000 Volts Forward Current: 1.0 A RoHS Device Features MDLS - Surge overload ratings to 35 amperes peak. 0.063 1.60 0.055(1.40) 0.035 (0.90)
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cgrhd101-gcgrhd107-ge321971ul94-v0+5cgrhd102-gcgrhd103-gcgrhd104-gcgrhd105-gcgrhd106-g
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Contextual Info: Comchip Low Profile SMD Bridge Rectifiers SMD Diode Specialist CGRHD101-G Thru. CGRHD107-G Reverse Voltage: 50 to 1000 Volts Forward Current: 1.0 A RoHS Device Features MDLS - Surge overload ratings to 35 amperes peak. 0.063 1.60 0.055(1.40) 0.035 (0.90)
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cgrhd101-gcgrhd107-ge321971ul94-v0+5cgrhd102-gcgrhd103-gcgrhd104-gcgrhd105-gcgrhd106-g
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smd marking code 8A
Contextual Info: Comchip General Purpose Rectifiers SMD Diode Specialist CGR860T-G Reverse Voltage: 600 V Forward Current: 8.0 A RoHS Device Features TO-220AC -Soft recovery characteristic. 0.108 2.75 -Low forward voltage. -Low recovery loss. 0.413(10.50) 0.374( 9.50) 0.153(3.90)
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cgr860t-go-220ac50eristicsqw-bg020+28fr060tsmd marking code 8a
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CGR860T-G
Abstract: General Purpose Rectifier
Contextual Info: Comchip General Purpose Rectifiers SMD Diode Specialist CGR860T-G Reverse Voltage: 600 V Forward Current: 8.0 A RoHS Device Features TO-220AC -Soft recovery characteristic. 0.108 2.75 -Low forward voltage. -Low recovery loss. 0.413(10.50) 0.374( 9.50) 0.153(3.90)
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cgr860t-go-220acqw-bg0208fr060t+1general purpose rectifier
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CW laser diode 808 nm
Abstract: cg85 laser 850 SPL CG94 YB device marking Code CG94 Q62702-P1617 Q62702-P358 808 semiconductor SPLCG81
Contextual Info: Laser Diode on Submount 1.0 W cw Class 4 Laser Product SPL CGxx (SFH 4804x2) Features • Efficient radiation source for cw and pulsed operation • Reliable InGa(Al)As strained quantum-well material • Single emitting area 200 µm x 1 µm • Small C-type copper submount for OEM designs
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4804x2q62702-p358q62702-p1617cw laser diode 808 nm+7cg85laser 850spl cg94yb device marking codecg94808 semiconductorsplcg81
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MARKING CODE YAG
Abstract: cg85 CW laser diode 808 nm max and min mode 808 dx
Contextual Info: SIEMENS Laser Diode on Submount 1.0 W cw Class 4 Laser Product SPL CGxx (SFH 4804x2) Features • Efficient radiation source for cw and pulsed operation • Reliable fnGa(AI)As strained quantum-well material • Single emitting area 200 yum x 1 jjm • Small C-type copper submount for OEM designs
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4804x2q62702-p358q62702-p1617marking code yag+3cg85cw laser diode 808 nmmax and min mode 808 dx
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Contextual Info: STTH2003CT/CG/CF HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS I f a v 2 x 10 A V rrm 300 V Tj (max) 175 °C V f (max) 1V trr (max) 35 ns d 2p a k STTH2003CG FEATURES AND BENEFITS • COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE
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stth2003ct/cg/cfstth2003cgt0-220abisowatt220ab+2stth2003ctstth2003cf
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STTH2003CG
Abstract: STTH2003CT diode MARKING CODE CG
Contextual Info: STTH2003CT/CG HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS IF AV A1 K 2 x 10 A VRRM 300 V VF (max) 1V trr (max) 35 ns A2 K FEATURES AND BENEFITS A1 COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE ULTRAFAST, SOFT AND NOISE-FREE
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stth2003ct/cgo-220abstth2003ctstth2003cg+1diode marking code cg
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CG94
Abstract: Q62702-P1617 Q62702-P358
Contextual Info: Laser Diode on Submount 2.0 W cw Laser Diode in offener Bauform 2.0 W cw SPL CGxx Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur
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gsoy6600cg94q62702-p1617q62702-p358 |
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Amplifier Micro-X "marking code" D
Abstract: MMIC Amplifier Micro-X marking D micro-X Package MARKING CODE C Amplifier Micro-X c5 marking code marking d "micro x" CGY41 MMIC marking CODE c4 Micro-X marking D d marking "Micro-X"
Contextual Info: CGY41 HiRel L- and S-Band GaAs General Purpose Amplifier • HiRel Discrete and Microwave Semiconductor • Single-stage monolithic microwave IC MMIC-amplifier • Application range: 100 MHz to 3 GHz 4 3 1 2 • Gain: 9.5 dB typ. @ 1.8 GHz • Low noise figure: 2.7 dB typ. @ 1.8 GHz
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cgy41qs9000amplifier micro-x "marking code" dmmic amplifier micro-x marking d+7micro-x package marking code camplifier micro-xc5 marking codemarking d "micro xmmic marking code c4micro-x marking dd marking "micro-x
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SPL CG94
Abstract: CW laser diode 808 nm 039 opto
Contextual Info: Laser Diode on Submount 2.0 W cw Laser Diode in offener Bauform 2.0 W cw SPL CGxx Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur
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gso06600spl cg94cw laser diode 808 nm039 opto |
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CG94
Abstract: Q62702-P1617 Q62702-P358 Q62702-P3494
Contextual Info: Laser Diode on Submount 2.0 W cw Laser Diode in offener Bauform 2.0 W cw SPL CGxx Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur
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gsoy6600cg94q62702-p1617q62702-p358+1q62702-p3494
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igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and
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igbt welding machine schemeikw40n120h3aircon l1smd diode schottky code marking sj+6transistor marking code 12w sot-2324v application with ice3ar0680jzinduction cooker fault findingipw65r041igw40n60h3spw55n80c3
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MOSFET IRFB 630
Abstract: IRFB 630 93804B MOSFET IRFB 630 Datasheet transistor IRF 630 AN1001 IRF1010 IRFB41N15D IRFIB41N15D IRFS41N15D
Contextual Info: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See
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93804birfb41n15dirfib41n15dirfs41n15d+10irfsl41n15dan1001o-220abo-220o-262mosfet irfb 630irfb 630mosfet irfb 630 datasheettransistor irf 630irf1010
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IRFB 630
Abstract: MOSFET IRFB 630 Datasheet MOSFET IRFB 630 transistor IRF 630 120V DC to DC Converter 10A TO-220 FULLPAK Package AN1001 IRF1010 IRFB41N15D IRFIB41N15D
Contextual Info: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See
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93804birfb41n15dirfib41n15dirfs41n15d+12irfsl41n15dan1001o-220abo-220o-262irfb 630mosfet irfb 630 datasheetmosfet irfb 630transistor irf 630120v dc to dc converter 10ato-220 fullpak packageirf1010
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IRFB 630
Contextual Info: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See
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93804birfb41n15dirfib41n15dirfs41n15d+6irfsl41n15dan1001o-220abo-220o-262irfb 630
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STTH
Abstract: STTH2003CF STTH2003CG STTH2003CT
Contextual Info: STTH2003CT/CG/CF HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 300 V Tj (max) 175 °C VF (max) 1V trr (max) 35 ns A1 K K A2 A1 A2 D2PAK STTH2003CG FEATURES AND BENEFITS COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE
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stth2003ct/cg/cfstth2003cgo-220abstth2003ct+3isowatt220abstth2003cfstth
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STTH2003CF
Abstract: STTH2003CG STTH2003CG-TR STTH2003CT
Contextual Info: STTH2003CT/CG/CF HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 300 V Tj (max) 175 °C VF (max) 1V trr (max) 35 ns A1 K K A2 A2 A1 D2PAK STTH2003CG FEATURES AND BENEFITS COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE
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stth2003ct/cg/cfstth2003cgo-220abisowatt220ab+3stth2003ctstth2003cfstth2003cg-tr
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STTH2003CF
Abstract: STTH2003CG STTH2003CG-TR STTH2003CR STTH2003CT diode MARKING CODE CG
Contextual Info: STTH2003CT/CG/CF/CR HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS A1 IF AV 2 x 10 A VRRM 300 V Tj (max) 175 °C VF (max) 1V trr (max) 35 ns K A2 K A2 FEATURES AND BENEFITS • ■ A2 K A1 A1 D2PAK STTH2003CG COMBINES HIGHEST RECOVERY AND
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stth2003ct/cg/cf/crstth2003cgstth2003cro-220ab+6isowatt220abstth2003ctisowatt220acsstth2003cfstth2003cg-trdiode marking code cg
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STTH2003CF
Abstract: STTH2003CG STTH2003CG-TR STTH2003CR STTH2003CT diode MARKING CODE CG
Contextual Info: STTH2003CT/CG/CF/CR HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS A1 IF AV 2 x 10 A VRRM 300 V Tj (max) 175 °C VF (max) 1V trr (max) 35 ns K A2 K A2 FEATURES AND BENEFITS • ■ A2 A1 COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE
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stth2003ct/cg/cf/crstth2003cgstth2003cro-220ab+6isowatt220abstth2003ctisowatt220abcsstth2003cfstth2003cg-trdiode marking code cg
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