DIODE MARKING CODE BD Search Results

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Contextual Info: SIEMENS Silicon Variable Capacitance Diode BB640 • For Hyperband TV/VTR tuners, Bd I 1 Type BB640 Pin Configuration Marking Ordering Code tape and reel 1 2 Q62702-B589 C A red S . Package SOD-323 Maximum Ratings Parameter Symbol Values Unit Reverse voltage

Contextual Info: SIEMENS Silicon Variable Capacitance Diode BB640 • For Hyperband TV/VTR tuners, Bd I Type BB 640 Ordering Code tape and reel 1 Q62702-B589 C Pin Configuration Marking 2 A Package red S SOD-323 Maximum Ratings Parameter Symbol Values Unit Reverse voltage

Contextual Info: 32E D • fl23L.32Q 0Qlb57b T H S I P Silicon Tuning Diode ~ T - 0 'i ^ ^ .SIEMENS/ SPCL-. SEMICONDS For Hyperband TV/VTR tuners. Bd I BB 620 _:_ Cathode B B620 Type Ordering code Q62702-B403 Marking red/S Maximum ratings Reverse voltage

620 diode

Abstract: marking bd SOd123 CT28 Q62702-B403 DIODE MARKING CODE BD
Contextual Info: BB 620 Silicon Variable Capacitance Diode ● BB 620 For Hyperband TV/VTR tuners, Bd I Type Marking Ordering Code tape and reel BB 620 red S Q62702-B403 Pin Configuration Package1) SOD-123 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 30

Contextual Info: SIEMENS BAR 63. Silicon PIN Diode • • • • PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz Type BAR BAR BAR BAR 63 63-04 63-05 63-06 Marking Ordering code tape and reel G3 G4

B589

Abstract: diode 640 B589 DIODE Q62702-B589 bd 640 CT28 450KW
Contextual Info: BB 640 Silicon Variable Capacitance Diode ● BB 640 For Hyperband TV/VTR tuners, Bd I Type Ordering Code tape and reel Pin Configuration Marking 1 2 Package BB 640 Q62702-B589 C red S SOD-323 A Maximum Ratings Parameter Symbol Values Unit Reverse voltage

marking bd SOd123

Contextual Info: SIEMENS Silicon Variable Capacitance Diode BB 620 • For Hyperband TV/VTR tuners, Bd I Type Marking Ordering Code tape and reel BB 620 red S Q62702-B403 Pin Configuration i Package1) SOD-123 2 o- -o Q W flO O O l Maximum Ratings Parameter Symbol

Contextual Info: 32E D • aS3b3S0 Q Q lbSS? 7 H S I P Silicon Switching Diode Array SMBD 2837/38 _ SIEMENS/ S P C L i T-O%~03 SEMICONDS • For high-speed switching applications • Common cathode Type Marking Ordering code for versions in bulk Ordering code for versions on 8-mm tape

Contextual Info: SIEM ENS • û2 3S bDS 000^434 'îflO Silicon Variable Capacitance Diode BB 515 • For UHF and VHF TV/VTR tuners • Large capacitance ratio • Low series resistance Type BB 515 Ordering Code tape and reel 1 2 Q62702-B607 C A Pin Configuration Marking

620 tg diode

Contextual Info: Silicon Variable Capacitance Diode BB 620 • For Hyperband TV/VTR tuners, Bd I Type Marking B B red S 6 2 0 Ordering Code tape and reel Pin Configuration Package1) 3 2 o - « - o Q 6 2 7 0 2 -B 4 0 3 S O D - 1 2 3 EHM0001 Maximum Ratings

Contextual Info: BB640. Silicon Variable Capacitance Diode
For Hyperband TV / VTR tuners, Bd l BB640 1 2 Type BB640 Package SOD323 Configuration single LS nH Marking 1.8 red S Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage

diode marking 226

Abstract: marking iNFINEON BAR63-03W sd199
Contextual Info: SD199E6327 Silicon Variable Capacitance Diode • For Hyperband TV / VTR tuners, Bd I • Large capacitance ratio, low series resistance • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 SD199  Type SD199E6327 Package SOD323 Configuration

Contextual Info: bbS3T31 □ 0257clfl 247 H A P X N AUER PHILIPS/DISCRETE PMBD 2837 PMBD 2838 L7E D J V SILICON PLANAR EPITAXIAL HIGH SPEED DIODES The PM BD2837 and 2838 consist of two diodes in a microminiature plastic envelope. The cathodes are commoned and the unit is intended for high speed switching.

k 2837

Abstract: C 2837 PMBD2837 PMBD2838 2838 ir PMBD
Contextual Info: • bbSB^ai 00257=10 247 ■ APX N AUER PHILIPS/DISCRETE PMBD 2837 PMBD 2838 b?E D SILICON PLANAR EPITAXIAL HIGH SPEED DIODES The PM BD 2837 and 283 8 consist of two diodes in a microminiature plastic envelope. The cathodes are commoned and the unit is intended for high speed switching.

TP10N

Contextual Info: £ 7 7 SGS-THOMSON k7#s. BD glSÌ(S ilLI(@T^ liD(ei Application Specific Discretes a q 25 n TSIxxBI TER M IN AL SET INTERFACE PROTECTION AND DIODE BRIDGE MAIN APPLICATION Telecom equipment requiring combined protection against transient overvoltages and

Contextual Info: IXA30RG1200DHGLB tentative XPT IGBT VCES = 1200 V I C25 = 43 A VCE sat = 1.8 V ISOPLUS Surface Mount Power Device Boost Topology XPT IGBT Part number IXA30RG1200DHGLB Backside: isolated 7 BD 9 VDD 1 FWD 3 2 8 Features / Advantages: Applications: Package: SMPD

Contextual Info: IXA40RG1200DHGLB tentative XPT IGBT VCES = 1200 V I C25 = 61 A VCE sat = 1.8 V ISOPLUS Surface Mount Power Device Boost Topology XPT IGBT Part number IXA40RG1200DHGLB Backside: isolated 7 BD 9 VDD 1 FWD 3 2 8 Features / Advantages: Applications: Package: SMPD

IXA20RG1200DHGLB

Abstract: BD-405
Contextual Info: IXA20RG1200DHGLB tentative XPT IGBT VCES = 1200 V I C25 = 32 A VCE sat = 1.8 V ISOPLUS Surface Mount Power Device Boost Topology XPT IGBT Part number IXA20RG1200DHGLB Backside: isolated 7 BD 9 VDD 1 FWD 3 2 8 Features / Advantages: Applications: Package: SMPD

Si5433DC

Abstract: Si5433DC-T1
Contextual Info: Si5433DC Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.040 @ VGS = -4.5 V -6.7 0.052 @ VGS = -2.5 V -5.9 0.072 @ VGS = -1.8 V -5.0 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BD XX Lot Traceability

PMBD7000

Abstract: diode p5C
Contextual Info: •I bbsa^ai ÜDHSÔD? DAT ■ APX N AMER PHILIPS/DISCRETE PMBD 7000 b?E D _ SILICO N PLANAR EPITAXIAL HIGH SPEED DIODES The PM BD7000 consists of two diodes in a microminiature plastic envelope. The diodes are connected in series and the unit is intended for high speed switching.