DIODE MARKING BF Search Results

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

BAW101

Abstract: BFP181
Contextual Info: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 " ! ,  ,  Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage

sot143 marking code u1s

Abstract: BFP181 BGX50A E6327
Contextual Info: BGX50A. Silicon Switching Diode Array
Bridge configuration
High-speed switching diode chip BGX50A 4 3 D 3 D 4 D 2 D 1 1 2 Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter

6050

Contextual Info: SIEMENS Silicon Switching Diode SMBD 6050 • For high-speed switching applications Type Marking Ordering Code tape and reel SMBD 6050 s5A Q68000-A8439 Pin Configuration Package1) SOT-23 < i^ i s o-o ^ ' EHA07002 Maximum Ratings Parameter

Contextual Info: SIEMENS Silicon PIN Diode BA 596 Preliminary Data • Current-controlled RF resistor for switching and attenuating applications. • Frequency range above 1 MHz • Designed for low IM distortion Type Marking Ordering Code tape and reel BA 596 white P Q62702-A954

DIODE marking code SJ

Abstract: ERC06 Diode RJ 4A PEI CF 30 FR A536
Contextual Info: E R C 6 i s a : Outline Drawings FAST RECOVERY DIODE Features •*^-T : Marking Most suitable for color T .V . damper. J> 7 — 3 — K : flf C o lo r code : Blue High voltage by mesa design. . <T3> High reliability Abridged type name $ 7 J* V o lta g e cla ss

BF1108_BF1108R

Abstract: BF1108_1108R_3 MARKING CODE CGK BF1108 BF1108R
Contextual Info: BF1108; BF1108R Silicon RF switches Rev. 04 — 29 May 2008 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The

Contextual Info: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 3 — 14 November 2014 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are

NDF06N60ZG

Abstract: 221D-01 NDF06N60Z TF-738
Contextual Info: NDF06N60Z N-Channel Power MOSFET 600 V, 1.2 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS @ TJmax

Contextual Info: NDF06N60Z N-Channel Power MOSFET 600 V, 1.2 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS @ TJmax

BFP420F

Contextual Info: BFP420F NPN Silicon RF Transistor* • For high gain low noise amplifiers 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

BFP405F

Abstract: BFP420F
Contextual Info: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

BF1108

Abstract: BF1108R DIODE marking S4 69 CIC 9102
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1108; BF1108R Silicon RF-switches Product specification Supersedes data of 1999 May 17 1999 Aug 19 Philips Semiconductors Product specification Silicon RF-switches BF1108; BF1108R FEATURES • Specially designed for low loss RF-switching

Contextual Info: IRF634B N-Channel BFET MOSFET 250 V, 8.1 A, 450 mΩ Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

NDF05N50ZG

Abstract: NDF05N50 5n50zg NDD05N50 50ZG NDD05N50Z-1G NDD05N50ZT4G
Contextual Info: NDF05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.5 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Contextual Info: NDF04N60Z, NDD04N60Z N-Channel Power MOSFET 600 V, 2.0 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

Contextual Info: IRF644B N-Channel BFET MOSFET 250 V, 14 A, 280 mΩ Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

Contextual Info: fc.bSB'm DDEMBD? bfifi • APX Philips Semiconductors Product specification N AHER PHILIPS/DISCRETE b7E D Schottky barrier diodes BAS70-07 QUICK REFERENCE DATA FEATURES • Low leakage current SYMBOL • Low turn-on and high breakdown voltage Vr continuous reverse voltage

NDF04N60ZG

Abstract: 4N60ZG 60ZG NDD04N60ZT4G ndf04n6 NDD04N60ZT NDF04N60ZH to220 3 lead plastic 369D
Contextual Info: NDF04N60Z, NDD04N60Z N-Channel Power MOSFET 600 V, 2.0 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

Contextual Info: • bbS3T31 □ D 3 S l cifi flSl HIAPX N APIER PHILIPS/D ISCR ETE | BFR101A BFR101B b?E J> _ ^ N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel silicon junction field-effect transistor, designed primarily for use as a source

4N 50ZG

Abstract: 50ZG ndd04n50zt4g BFR 965 369AA
Contextual Info: NDD04N50Z N-Channel Power MOSFET 500 V, 2.7 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS RDS on (MAX) @ 1.5 A

Contextual Info: NDD03N80Z N-Channel Power MOSFET 800 V, 4.5 W Features • • • • ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V BR DSS RDS(ON) MAX 800 V 4.5 W @ 10 V

ndd03n50

Abstract: nchannel marking code 3n BFR 965 50ZG
Contextual Info: NDD03N50Z N-Channel Power MOSFET 500 V, 3.3 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS RDS on (MAX) @ 1.15 A

Contextual Info: International 4Ö55M5E 0D1474Q bflT • INR »¡»Rectifier HEXFET Power MOSFET • • • • • • • PD-9.902 IRF640S INTERNATIONAL RECTIFIER bSE » Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching