| BAW101 |  | Central Semiconductor | DUAL, ISOLATED HIGH VOLTAGE SWITCHING DIODES | Original | PDF | 155.06KB | 2 | 
| BAW101 |  | Diodes Incorporated | DUAL SURFACE MOUNT SWITCHING DIODE | Original | PDF | 70.64KB | 4 | 
| BAW101 |  | Infineon Technologies | Silicon Switching Diode | Original | PDF | 436.65KB | 3 | 
| BAW101 |  | Infineon Technologies | Silicon Switching Diode Array with medium-speed diodes | Original | PDF | 30.95KB | 3 | 
| BAW101 |  | Infineon Technologies | High Speed Switching Diodes; Package: PG-SOT143-4; Configuration: Dual; VR (max): 300.0 V; IF (max): 250.0 mA; IR (max): 150.0 nA; trr (max): 1,000.0 ns; | Original | PDF | 58.82KB | 5 | 
| BAW101 |  | Kexin | Silicon Switching Diode Array | Original | PDF | 35.81KB | 2 | 
| BAW101 |  | NXP Semiconductors | BAW101 - High voltage double diode - Cd max.: 2 pF; Configuration: dual isolated ; IF max: 250 mA; IFSM max: 4.5 A; IR max: 150@VR=250V nA; IFRM: 625 mA; trr max: 50 ns; VFmax: 1.1@IF=100mA mV; VR max: 300 V | Original | PDF | 80KB | 9 | 
| BAW101 |  | Philips Semiconductors | BAW101, High voltage double diode | Original | PDF | 61.73KB | 12 | 
| BAW101 |  | Siemens | Silicon Switching Diode Array (Electrically insulated high-voltage medium-speed diodes) | Original | PDF | 62.95KB | 3 | 
| BAW101 |  | Siemens | RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide | Original | PDF | 465.63KB | 37 | 
| BAW101 |  | Siemens | Cross Reference Guide 1998 | Original | PDF | 27.35KB | 7 | 
| BAW101 |  | TY Semiconductor | Silicon Switching Diode Array - SOT-143 | Original | PDF | 91.69KB | 2 | 
| BAW101 |  | Central Semiconductor | DUAL, ISOLATED HIGH VOLTAGE SWITCHING DIODES | Scan | PDF | 63.58KB | 2 | 
| BAW101 |  | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | PDF | 94.92KB | 1 | 
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| BAW101 |  | Siemens | Components for Surface Mounting 1983/4 | Scan | PDF | 48.28KB | 1 | 
| BAW101,215 |  | NXP Semiconductors | High voltage double diode - Cd max.: 2 pF; Configuration: dual isolated ; IF max: 250 mA; IFSM max: 4.5 A; IR max: 150@VR=250V nA; IFRM: 625 mA; trr max: 50 ns; VFmax: 1.1@IF=100mA mV; VR max: 300 V; Package: SOT143B (SOT4); Container: Tape reel smd | Original | PDF | 80.1KB | 9 | 
| BAW101-7 |  | Diodes Incorporated | Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE ARRAY 300V 250MA SOT143 | Original | PDF |  | 4 | 
| BAW101E6327 |  | Infineon Technologies | DIODE SWITCHING 300V 0.25A PG-SOT143-4-1 T/R | Original | PDF | 59.27KB | 5 | 
| BAW101E6327 |  | Infineon Technologies | Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE ARRAY 300V 250MA SOT143 | Original | PDF |  | 5 | 
| BAW101E6327HTSA1 |  | Infineon Technologies | Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY GP 300V 250MA SOT143 | Original | PDF | 62.01KB |  |