DIODE MARKING 1.0/50 71 Search Results

IRFH5207

Abstract: N-Channel 40V MOSFET
Contextual Info: PD -96298A IRFH5207PbF HEXFET Power MOSFET VDS 75 V RDS on max 9.6 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω 71 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

marking 43a

Abstract: marking code 43a IRFH5207TR2PBF IRFH5207TRPBF AN-1154 IRFH5207
Contextual Info: PD -96298 IRFH5207PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 75 V 9.6 mΩ Qg (typical) RG (typical) 39 nC 1.7 Ω ID 71 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

Contextual Info: PD -96298A IRFH5207PbF HEXFET Power MOSFET VDS 75 V RDS on max 9.6 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω 71 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

Contextual Info: IRFH5207PbF HEXFET Power MOSFET VDS 75 V RDS on max 9.6 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω 71 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications

FDPF10N50FT

Abstract: fdpf10n50
Contextual Info: FDPF10N50FT N-Channel UniFETTM FRFET MOSFET 500 V, 9 A, 850 m Features Description • RDS on = 710 m (Typ.) @ VGS = 10 V, ID = 4.5 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology.

Contextual Info: FDPF10N50FT N-Channel UniFETTM FRFET MOSFET 500 V, 9 A, 850 m Features Description • RDS on = 710 m (Typ.) @ VGS = 10 V, ID = 4.5 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology.

MIXD50W650TED

Contextual Info: MIXD50W650TED Six-Pack Trench XPT IGBT VCES = 650 V IC25 = 71 A VCE sat typ. = 1.55 V Part name (Marking on product) MIXD50W650TED 17 1 5 9 2 6 10 18 3 4 23, 24 21, 22 19, 20 E72873 Pin configuration see outlines. iv NTC e 15, 16 25, 26 7 11 8 12 13, 14 a

marking code JD SMD

Abstract: smd marking JD mmbd715 smd marking code 3D MMBD706W smd diode je smd marking code je MMBD717W MMBD715W SCHOTTKY MARKING cd S0D-323
Contextual Info: Formosa MS SMD Schottky Barrier Diode MMBD706W / 715W / 717W List List. 1 Package outline. 2

IRLR014N

Abstract: IRLR024N IRLU024N AN-994 IRFR120 IRFU120
Contextual Info: 2002-03-06 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-186-15 IRLR014N HEXFET D-Pak PD- 94350 IRLR/U014N HEXFET Power MOSFET Logic-Level Gate Drive Surface Mount IRLR024N

Microwave PIN diode

Abstract: N0627 1sv85 8542A 1SV36 ND6361-3F ND6371-5E T07 marking 1SV26 MARKING 8542a
Contextual Info: 'T - O l- lS N E C / 1SE CALIFORNIA NEC D H b457414 0001=147 1 MICROWAVE SILICON PIN DIODE ND6000 SERIES FEATURES ABSOLUTE MAXIMUM RATINGS • LOW, MEDIUM, & LONG LIFETIMES SYMBOLS PARAMETERS Vr Reverse Voltage ND6261,71, 81, ND6361, 71 ND6461, 71 ND6481, ND6651. 61

Contextual Info: Schottky Barrier Diode Twin Diode W tm SF5SC4 OUTLINE fk 40V Feature • Tj=150°C • Tj= 150°C • PR RSM T ’A ' i ^ V Î ' I ' K i E • • 71 [ Æ -J U K • Full M o ld e d • I Ê S I f f i2 k V « | I • D ie le ctric S tren g th 2 k V Rating

B0540W

Abstract: B0520LW B0520W B0530W
Contextual Info: B0520LW/B0530W/B0540W SCHOTTKY DIODE SOD-123 1.80 .071 1.65(.065) 1.40(.055) 1.55(.061) 3.86(0.152) 3.56(0.145) 2.84(0.112) 3.9(0.154) 2.54(0.100) 3.7(0.146) FEATURES 2.7(0.106) 2.6(0.102) .71(0.028) 0.6(.023) .50(0.020) 0.5(.020) .15(.006) MAX Low forward voltage drop

Microwave PIN diode

Abstract: 1SV36 ND6000 8542A N0627 1SV37 ND6361-3F ND6371-5E d6471
Contextual Info: N E C / 1SE D CALIFORNIA NEC H T-07-IS fc.427414 0001=147 1 MICROWAVE SILICON PIN DIODE ND6000 SERIES FEATURES ABSOLUTE MAXIMUM RATINGS qa - 25°o • LOW, MEDIUM, & LONG LIFETIMES SYMBOLS PARAMETERS Vr Reverse Voltage ND6261, 71, 81, ND6361, 71 ND6461, 71

AN-994

Abstract: IRF3704 IRF3704L IRF3704S IRF3707 IRF3707L IRF3707S
Contextual Info: 2002-02-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-146-89 IRF3707 HEXFET TO-220 PD - 93937A IRF3707 IRF3707S IRF3707L SMPS MOSFET Applications l High Frequency DC-DC Isolated

Contextual Info: FDP8876 N-Channel PowerTrench MOSFET 30V, 71A, 8.5mΩ Features General Descriptions ̈ rDS ON = 8.5mΩ, VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to ̈ rDS(ON) = 10.3mΩ, VGS = 4.5V, ID = 40A improve the overall efficiency of DC/DC converters using

FDP8876

Abstract: 71A marking
Contextual Info: FDP8876 N-Channel PowerTrench MOSFET 30V, 71A, 8.5mΩ General Descriptions Features „ rDS ON = 8.5mΩ, VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to „ rDS(ON) = 10.3mΩ, VGS = 4.5V, ID = 40A improve the overall efficiency of DC/DC converters using

AN-994

Abstract: IRF3706 IRF3706L IRF3706S
Contextual Info: 2002-02-21 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-146-55 IRF3706 HEXFET TO-220 PD - 93936A IRF3706 IRF3706S IRF3706L SMPS MOSFET HEXFET Power MOSFET Applications

AN-994

Abstract: IRF530N IRF530NL IRF530NS
Contextual Info: 2002-02-21 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-149-37 IRF530NS HEXFET D2Pak PD - 91352A IRF530NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology

Contextual Info: FDPF10N50FT N-Channel UniFETTM FRFET MOSFET 500 V, 9 A, 850 mΩ Features Description • RDS on = 710 mΩ (Typ.) @ VGS = 10 V, ID = 4.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

AN-994

Abstract: IRL3303 IRL3303L IRL3303S
Contextual Info: 2002-03-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-179-89 IRL3303S HEXFET D2Pak PD - 9.1323B IRL3303S/L l l l l l l l Logic-Level Gate Drive Advanced Process Technology

AN-994

Abstract: IRF520N IRF520NL IRF520NS
Contextual Info: 2002-02-21 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-148-46 IRF520NS HEXFET D2Pak PD -91340A IRF520NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology

IRLR3410

Abstract: IRLU3410 AN-994 IRL530N
Contextual Info: 2002-03-06 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-187-06 IRLR3410 HEXFET D-Pak PD - 91607B IRLR/U3410 HEXFET Power MOSFET Logic Level Gate Drive l Ultra Low On-Resistance

f8l60

Abstract: f8l60usm SF8L60USM 2kv diode fly wheel diode marking code 58 f8l6
Contextual Info: Super Fast Recovery Diode Single Diode W tm SF8L60USM OUTLINE 60 0V 8A Feature • m s 'ix • • L o w N oise tr r = 2 5 n s • trr= 2 5 n s • 71 [Æ - J U K • Full M o ld e d • « I M E 2kVSEE • D ie le ctric S tre n g th 2kV Main Use • T.'i

AN-994

Abstract: IRLR3303 IRLU3303
Contextual Info: 2002-03-06 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-186-98 IRLR3303 HEXFET D-Pak PD - 91316F IRLR/U3303 HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive