DIODE M5G Search Results
DIODE M5G Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE M5G Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MMBD7000-V-G www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES • Silicon epitaxial planar diode 3 • Fast switching dual diode, especially suited for automatic insertion • AEC-Q101 qualified 1 • Material categorization: |
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mmbd7000-v-gaec-q101ot-2318/10k+5 | |
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Contextual Info: MMBD7000-G www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES • Silicon epitaxial planar diode 3 • Fast switching dual diode, especially suited for automatic insertion • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade |
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mmbd7000-gaec-q101ot-2318/10k+5 | |
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Contextual Info: MMBD7000-V-G Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode, especially suited for automatic insertion • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC |
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mmbd7000-v-gaec-q1012002/95/ec2002/96/ec+4 | |
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Contextual Info: MMBD7000-V-G Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode, especially suited for automatic insertion • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC |
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mmbd7000-v-gaec-q1012002/95/ec2002/96/ec+4 | |
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Contextual Info: MMBD352 / 353 / 354 / 355 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Very Low Capacitance Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications |
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mmbd352ot-23mil-std-202 | |
MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
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OCR Scan |
1phx11136q-14mhw721a213001 s 6d transistoratv5030* motorola+7 | |
MMBF4856
Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
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226aa226aemmsd1000t1236ab+12 | |
BC547 sot package sot-23
Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
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mdc5000t1mdc5001t1mdc3105lt1bc547 sot package sot-23+9 | |
BC337 BC547
Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
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mdc5000t1mdc3105lt1bc337 bc547msb81t1+8 | |
TO-236AB
Abstract: SOT23 marking m5g DIODE M5G
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mmbd352lt1mmbd353lt1mmbd354lt1mmbd355lt1+5 | |
M6H MARKING sot23
Abstract: MMBD352LT1 MMBD352LT1G MMBD352LT3 MMBD352LT3G MMBD353LT1 MMBD353LT1G MMBD353LT3 MMBD353LT3G MMBD354LT1
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mmbd352lt1mmbd353lt1mmbd354lt1mmbd355lt1+9 | |
.318 SOT23Contextual Info: ON Semiconductort MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts |
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mmbd352lt1mmbd353lt1mmbd354lt1mmbd355lt1+3 | |
M6H MARKING sot23
Abstract: DIODE M5G MMBD355LT1G NSVMMBD353LT1G SOT23 marking m5g Code sot-23 on semiconductor NSVMMBD353 marking M6H SOT-23 m4f e
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mmbd352lt1gmmbd353lt1gnsvmmbd353lt1gmmbd354lt1g+12 | |
MMBD352LT1
Abstract: MMBD352LT1G MMBD352LT3 MMBD352LT3G MMBD353LT1 MMBD353LT1G MMBD353LT3 MMBD354LT1 MMBD355LT1 On semiconductor date Code sot-23
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mmbd352lt1mmbd353lt1mmbd354lt1mmbd355lt1+9 | |
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MMBD352LT1
Abstract: MMBD352LT1G MMBD352LT3 MMBD352LT3G MMBD353LT1 MMBD353LT1G MMBD353LT3 MMBD354LT1 MMBD355LT1 MMBD353LT3G
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mmbd352lt1mmbd353lt1mmbd354lt1mmbd355lt1+9 | |
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Contextual Info: MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G http://onsemi.com Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching |
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mmbd352lt1gmmbd353lt1gnsvmmbd353lt1gmmbd354lt1g+3 | |
MMBD352LT1
Abstract: MMBD353LT1 MMBD354LT1 MMBD355LT1 MMBD352L
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mmbd352lt1mmbd353lt1mmbd354lt1mmbd355lt1+4 | |
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Contextual Info: Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts Typ @ I F = 10 mA |
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mmbd352lt1mmbd353lt1mmbd354lt1mmbd355lt1+1 | |
TO-236AB
Abstract: DIODE M5G Diode SOT-23 marking J marking 08 sot-23 MMBD352 MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 to236ab
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mmbd352lt1mmbd353lt1mmbd354lt1mmbd355lt1+8 | |
MBD353LT1
Abstract: case 3 MBD352
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OCR Scan |
mbd352lt1mbd353lt1mmbd354lt1bd355lt1+6 | |
BC517 spice model
Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
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vn2410lbc517 spice modelbc547 spice modelbc548 spice model+7 | |
TRANSISTOR AH-16
Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
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dl126/dnov-2001r14525dl126+10 | |
marking 513 SOD-323
Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
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dl126/dnov-2001r14525marking 513 sod-323+9 | |
CBF493S
Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
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dl126/dnov-2001r14525cbf493s+9 | |