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    onsemi MMBD353LT1G

    7.0 V Schottky Diode dual series reverse
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    Master Electronics MMBD353LT1G
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    Avnet Americas () MMBD353LT1G Tape & Reel 27,000
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    MMBD353LT1G Tape & Reel 38 Weeks, 4 Days 21,000
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    Newark MMBD353LT1G Cut Tape 9,000
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    Bristol Electronics () MMBD353LT1G 2,668
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    MMBD353LT1G 2,300 1
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    TME MMBD353LT1G 1
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    ComSIT USA MMBD353LT1G 3,000
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    Avnet Silica MMBD353LT1G 33,000 52 Weeks 3,000
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    EBV Elektronik MMBD353LT1G 53 Weeks 3,000
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    Flip Electronics MMBD353LT1G 12,000
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    onsemi NSVMMBD353LT1G

    7.0 V Schottky Diode, dual, series reverse. - Tape and Reel (Alt: NSVMMBD353LT1G)
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    Avnet Americas NSVMMBD353LT1G Tape & Reel 58 Weeks 15,000
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    Newark NSVMMBD353LT1G Tape & Reel 6,000
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    RS NSVMMBD353LT1G Bulk 20
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    Bristol Electronics NSVMMBD353LT1G 35,176 1
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    TME NSVMMBD353LT1G 1
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    Avnet Silica NSVMMBD353LT1G 53 Weeks 3,000
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    EBV Elektronik NSVMMBD353LT1G 53 Weeks 3,000
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    Motorola Semiconductor Products MMBD353LT1

    Diode RF 7V 300mW 3-Pin SOT-23 T/R
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    Bristol Electronics MMBD353LT1 5,572
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    MBD353LT1 Datasheets Context Search

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    MBD353LT1

    Abstract: case 3 MBD352
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra-fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


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