DIODE LT 351 Search Results

2N7002

Abstract: LT3465 LT3465A DIODE schottky 0.2v DN325
Contextual Info: advertisement High Efficiency ThinSOT White LED Driver Features Internal Switch and Schottky Diode – Design Note 325 David Kim Introduction The LT 3465 white LED driver is ideal for backlight circuits in small, battery-powered portable devices— such as cellular phones, PDAs and digital cameras. The

IRFP350

Abstract: diode sv 03 ADE 352 TI414 diode sv 03 56 IRFP250 IRFP251 IRFP252 IRFP253 IRFP351
Contextual Info: 7964142 SAMSUNG SEMICONDUCTOR 98D 0 5 2 0 4 INC N-CHANNEL T POWER MOSFETS IRFP350/351/352/353 Tfl Im F % 41 4 E □ 0□ S E □ 4 fi f FEATURES Low Ros<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance

LT1990

Abstract: variable resistor 100k connection Diode LT 351 dn351f Micropower 100A LT6550 LT6650 precision zener diode precision reference zener diode
Contextual Info: advertisement Versatile Micropower Voltage Reference Provides Resistor Programmable Output from 0.4V to 18V – Design Note 351 Jon Munson Introduction Voltage reference integrated circuits are widely used to establish accurate and stable voltages in analog circuits.

Contextual Info: SANKEN ELECTRIC CO LTD SSE D T^OTHl ODD117b 351 » S A K J SMA4021 Silicon PNP Epitaxial Planar ¡Maximum Ratings Item Collector-to-B ase Voltage Ta = 25*C Sym bol S t Ä VCBO -6 0 C ollector-to-E m itter Voltage VCEO -6 0 V Em itter-to-B ase Voltage V ebo

ba9u

Abstract: JM34R8
Contextual Info: 2 D I7 5 M -1 2 0 7 6 'in — 9 ^ a > 3- - >i : Outline l£f Drawings POWER TRANSISTOR MODULE : Features • • • • 3511(81^4*'' ^' High Arm Short Circuit Capability hFE*x'S '- ' High DC Current Gain 7 U —jfc'f U V W - i =t —K l*JM Including Free Wheeling Diode

PP-10G

Abstract: pp10g
Contextual Info: ERICSSON ^ February 1999 PBD 3517/1 Stepper Motor Drive Circuit Description PBD 3517/1 is a bipolar, monolithic, integrated circuit, intended to drive a stepper motor in a unipolar, bilevel way. One PBD 3517/1 and a minimum of external com ponents form a complete control

IRF350

Abstract: IRF352 CEG05 F250 IRF251 IRF252 IRF253 IRF351 IRF353 1tm4a
Contextual Info: - .7964142 DE 1 7 ^ 4 1 4 2 SAMSUNG SE M IC O N DUCTOR □DDS1S4 0 ~ | ~ - _ IN C 98D :. 05124 N-CHANNEL POWER MOSFETS IRF350/351/352/353 FEATURES • LOW RoS on • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

lt 0210

Abstract: B150 LT3682 DN475
Contextual Info: µPower Buck Regulator Safely Rides Through Automotive Load Dumps – Design Note 475 Juan G. Aranda Introduction When a buck regulator is used in applications where output short-circuit and overload conditions occur, the duty cycle required to keep the inductor current under control can

step down transformer 12v

Abstract: 18v step down transformer 12v and 500ma transformer sepic flyback converter 12v to 18v Transformer sepic LT1961 UPS140 5v dc 500ma variable transformer dc dc sepic 5V converter
Contextual Info: advertisement Boost Regulator Makes Low Profile SEPIC with Both Step-Up and Step-Down Capability – Design Note 317 Keith Szolusha 3V to 20V Input, 5V Output, 3mm Maximum Height SEPIC Figure 1 shows a 3V to 20V input, 5V output 3mm maximum height SEPIC using the LT 1961, a 1.25MHz,

Contextual Info: • M 3 0 2 5 7 1 D 0 S 3 T 4 a 2 HARRIS 7 f l b ■ H A S IR F350/351/352/353 IRF350R/351R/352R/353R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package TO-2Q4AA • 13A and 15.0A, 350V - 400V • i"DS on) = ° -3 fi and 0 .4 fi

1rf9610

Abstract: IRF9610 IRF9610S ScansUX102 afra marking
Contextual Info: PD-9.350F International l»51 Rectifier IRF9610 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements V Ds s = - 2 0 0 V ^DS on = 3 - 0 0 ln = -1.8A Description DATA SHEETS The HEXFET technology is the key to International Rectifier’s advanced line

13N50D

Abstract: 13N5 OC205 e5270 13N50
Contextual Info: rZ 7 SCS-THOMSON Ä T# [» [æ a jO îIR M O û S S T H 13N5 0 D N - CHANNEL ENHANCEMENT MODE FREDFET PRELIM INARY DATA TYPE STH 13N 50D . V dss R D S o n Id 500 V 0 .4 5 £2 13 A P O W E R M O S T R A N S IS T O R W ITH F A S T RECOVERY B U LK D IO D E: C O M P L E T E

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. FRDB-3500P-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 35 AMP FAST RECOVERY BRIDGE RECTIFIERS MECHANICAL SPECIFICATION FEATURES SERIES FDB3500P - FDB3510P PRV Ratings from 50 to 1000 Volts

FDB3500P

Abstract: Fast Recovery Bridge Rectifiers FDB3510P G17Z Dada sheet
Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. FRDB-3500P-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 35 AMP FAST RECOVERY BRIDGE RECTIFIERS MECHANICAL SPECIFICATION FEATURES SERIES FDB3500P - FDB3510P PRV Ratings from 50 to 1000 Volts

triac tic 2260

Abstract: NATIONAL LINEAR APLICATION VALVO V42310-Z110 B250C1500 B250C1500 B B80C1000 telequarz B80C800 datasheet LT 735
Contextual Info: ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 4.3 User’s Manual 02.95 PEB 2091 V4.3 Revision History: Previous Releases: Page Original Version: 09.94 02.95 Subjects changes since last revision Update including appendix Data Classification

FDB3500P

Abstract: FDB3510P 3501P
Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. FRDB-3500P-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 35 AMP FAST RECOVERY BRIDGE RECTIFIERS MECHANICAL SPECIFICATION FEATURES SERIES FDB3500P - FDB3510P PRV Ratings from 50 to 1000 Volts

WESTINGHOUSE scr

Abstract: WESTINGHOUSE ELECTRIC scr WESTINGHOUSE scr fast WESTINGHOUSE ELECTRIC application data scr westinghouse 12 Westinghouse diode Westinghouse Westinghouse Semiconductor
Contextual Info: 420A Avg. 650A RMS Up to 1800 Volts 8 0-10 0 j j s Fast Switching SCR T72H 42 Symbol 0D 0D, 0D2 H <pJ Jt L N Inches Min. 2.250 1.333 2.030 1.020 .135 .075 7.75 .040 Millimeters Min. Max. 57.15 58.17 33.86 34.11 51.56 53.09 25.91 26.92 3.43 3.68 2.29 1.91

rca thyristor manual

Abstract: diode lt 341 1W1000 RG35A "RCA Solid State thyristor
Contextual Info: B3612 PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC D ECEM BER 1995 - B 6V IS6 0 SfiPfeM HEFI 1897 Copyright 1997. Power Innovations Limited. UK OVERVOLTAGE PROTECTION FOR ERICSSON COMPONENTS LINE INTERFACE CIRCUITS • PBA 3357/3 DCLIC Overvoltage Protector

Contextual Info: 4Û55452 QOmabb fl?b • INR International Rectifier IRF9610 bSE J> INTER-NATIONAL RECTIFIER HEXFET Power M O S FE T • • • • • PD-9.350F Dynamic dv/dt Rating P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements V pss ~ "200V R DS on =

Coiltronics VP1-0076

Abstract: LTC1871 FZT605 VP1-0076 10bq060 MMSD4148T11 30BQ015 B952AS-1R8N DS104C2 FDC2512
Contextual Info: advertisement LTC1871 No RSENSE Controller Is Small and Efficient in Boost, Flyback and SEPIC Applications – Design Note 296 Tick Houk the on-time, thereby providing the control loop with a “lossless” method of measuring the switch current. This technique provides the maximum efficiency possible for

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. BRDB-3500-1C ADBD-3500-1C 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 35 AMP SILICON BRIDGE RECTIFIERS MECHANICAL SPECIFICATION FEATURES SERIES: DB3500 - DB3510 and ADB3504 - ADB3508

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. BRDB-3500-1C ADBD-3500-1C 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 35 AMP SILICON BRIDGE RECTIFIERS MECHANICAL SPECIFICATION FEATURES SERIES: DB3500 - DB3510 and ADB3504 - ADB3508

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. BRDB-3500P-1C ADBD-3500P-1C 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 35 AMP SILICON BRIDGE RECTIFIERS MECHANICAL SPECIFICATION FEATURES SERIES: DB3500P - DB3510P and ADB3504P - ADB3508P

j329

Abstract: transistor sb 772 TRANSISTOR b 772 p jft 1411 2SJ329 GI 242 F108 diode diode lt 0236 F108 NEC 2415
Contextual Info: M 0 S J F ^ f M ^ / \ Or7 - M O S FET M O S Field Effect P ow er Transistor P ^ ^ t ^ l / / \ o7 - M 0 S I 2 S J 3 2 9 Ü P ? + ^ ;U / \ “ 7 - M 0 S F E T Ü F E T T * < X - f 'y ^ > ^ Î $ 1 4 * ^ # n T Î 3 U , ;& Î l 7 7^ 5 l i L X - ^ X -f y ^ i » D C - D C = l > / < - $ IC ftilT '- fo