TI414 Search Results

taig

Abstract: TI414
Contextual Info: SAMSUNG SEMICONDUCTOR INC OB KS74AHCT ^ O D O S ^ b 5 |~T^3-X/ Hex Inverters with Open-Draìn Outputs FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with 54/74ALS ogle family • Low power consumption characteristic of CMOS These devices contain six independent inverters with opendrain outputs. Using a suitable pull-up resistor, these out­

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

TI414

Contextual Info: J IU U U L B SAU SUN G S E M I C O N D U C T O R INC 05 Pe J 7 ^ m M E KS54AHCT KS74AHCT □ □ □ 5 clfc.3 fl 4-Bit Bistable Latches DESCRIPTION FEATURES » Function, pinout, speed and drive compatibility with 54/74ALS logic family • Low power consumption characteristic of CMOS

IRF250

Abstract: MOSFET IRF250 IRF250 power MOSFET 1RF250 5104 mosfet b16a diode IRF250 MOSFET IRF250 "on semiconductor" IRF251 IRF252
Contextual Info: 7964142 Tñ SAMSUNG SEMICONDUCTOR IN C 9 8 D 051 O 4 DE | ? c]t.4145 DDDSIDM 4 I p T “ 3 7- N-CHANNEL POWER MOSFETS IRF250/251/252/253 FEATURES Low RoS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance

IRF250

Abstract: F25-3
Contextual Info: 7964142 Tñ S AM S U N G DE | ? c] t . 4 1 4 5 S E M I CONDUCTOR DDDS1DM 4 INC 9 8D 0 51 0 4 0 T “ 3 7- N-CHANNEL POWER MOSFETS I IRF250/251 /252/253 FEA TU R E S Low RoS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

RA5B

Contextual Info: DRAM MODULE KMM332V803AS-L KMM332V803AS-L Fast Page Mode 8M x32 Based on 8Mx8, 4K Refresh, 3.3V, Low power/Self-Refresh G ENER AL DESCRIPTION FEATURES The Samsung KMM332V803A is a 8M bit x 32 Dynamic RAM high density memory module. The Samsung KMM332V803A consists of four CMOS

Contextual Info: SAMSUNG ELECTRONICS INC b 7E » • 7 c b m 4 E KM64B258A GG175BQ IT T BiCMOS SRAM 65,536 WORD x 4 Bit With OE) High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12ns (max.) • Low Power Dissipation Standby (TTL) : 110mA (max.)

Contextual Info: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 urn CMOS • Organization : 64K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V KM68U512A family : 3.0V +/- 0.3V