TI4142 Search Results

IRF250

Abstract: MOSFET IRF250 IRF250 power MOSFET 1RF250 5104 mosfet b16a diode IRF250 MOSFET IRF250 "on semiconductor" IRF251 IRF252
Contextual Info: 7964142 Tñ SAMSUNG SEMICONDUCTOR IN C 9 8 D 051 O 4 DE | ? c]t.4145 DDDSIDM 4 I p T “ 3 7- N-CHANNEL POWER MOSFETS IRF250/251/252/253 FEATURES Low RoS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance

IRF250

Abstract: F25-3
Contextual Info: 7964142 Tñ S AM S U N G DE | ? c] t . 4 1 4 5 S E M I CONDUCTOR DDDS1DM 4 INC 9 8D 0 51 0 4 0 T “ 3 7- N-CHANNEL POWER MOSFETS I IRF250/251 /252/253 FEA TU R E S Low RoS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

RA5B

Contextual Info: DRAM MODULE KMM332V803AS-L KMM332V803AS-L Fast Page Mode 8M x32 Based on 8Mx8, 4K Refresh, 3.3V, Low power/Self-Refresh G ENER AL DESCRIPTION FEATURES The Samsung KMM332V803A is a 8M bit x 32 Dynamic RAM high density memory module. The Samsung KMM332V803A consists of four CMOS

Contextual Info: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 urn CMOS • Organization : 64K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V KM68U512A family : 3.0V +/- 0.3V