DIODE LT 205 Search Results

Contextual Info: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

diode lt 205

Abstract: CMLM0205 CMLM0705 CMLM2205 diode marking 53
Contextual Info: Central CMLM2205 M U LT I D I S C R E T E M O D U L E SURFACE MOUNT SILICON SWITCHING NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE TM SOT-563 CASE TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMLM0205 is a Multi Discrete Module ™ consisting of a single NPN

ITB68

Contextual Info: S E M IT R O N I N D U S T R I E S LT D 4 3E J> m B 137&&1 O O O O lb ? 4 E3 SLCB L7SERIES Hermetically Sealed Metal Packaged •Surge Suppressor Diode Voltage Range 5VI to 200 Volts 25 Watt Steady State ■1500 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

113 marking code PNP transistor

Abstract: MARKING C75 CMLM2205 CMLM0705
Contextual Info: Central CMLM0705 M U LT I D I S C R E T E M O D U L E SURFACE MOUNT SILICON SWITCHING PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE TM SOT-563 CASE TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMLM0705 is a Multi Discrete Module ™ consisting of a single PNP

IN4745

Abstract: in4749 in4728
Contextual Info: 7" - / / - / 3 LI TE-ON INC CHE D | S 5 3 b 3 b 7 0 0 0 1 4 7 3 3 | IN4728 THRU IN 4764 1 WATT PLASTIC ZENER DIODE V O LT A G E RANGE 3.3 to 100 Volts POWER RATING 1.0 Watts =m = FEA TU RES: DO-41 • • • • Low cost Low zener impedance Excellent clamping

1N4151 equivalent

Abstract: Diode Equivalent 1n4151 1N4532 1N4152 1N4151 1N4153 1N4154 1N4454 MHD618 in4454
Contextual Info: 1N4154 S E E PAG E 205 Silicon r -— i Diodes 1N4151.2.3 1N4454 1N4532,3,4 This fam ily of General Electric silicon signal diodes are very high speed sw itching diodes for computer circuits and general purpose applications. These diodes incorporate an oxide passivated planar struc­

6sf7

Abstract: 6b8g RADIOTRON rca company
Contextual Info: 6SF7 DIODE-SUPER-CONTROL AMPLIFIER PENTODE St N G L E -E N D E D M ETAL T Y PE H e a t e r* Coated Uni po te n tia l Cathode a-c o r d-c vol ts V o ltage 6.3 amp. Current 0.3 D ire c t In te re le ctro de C apacitances:0 Pentode Uni t G rid to PI ate 1nput

KA2 DIODE

Abstract: DT 7130 IC rc 3150 IRKT 180
Contextual Info: International S Rectifier s e r ie s ir k .fis o FAST SCR I DIODE and SCR / SCR MAGN-A-pak Power Modules Features • ■ ■ I ■ F a st tu rn -o ff th yristo r F a st re c o v e ry d io d e H igh s u rg e c a p a b ility E le c tric a lly is o la te d b a s e p la te

Photoresistor

Abstract: LT205513 Photoresistor diode optocoupler Photoresistor LT30 LT9914 LT99 diode lt 54 LT2001 LT-99
Contextual Info: LT 99. LT 3011 LT 20. LT 10. LT 10. LT 2 0 . LT 3 0. LT 9 9 . R1 m A Output Resistance at If = 1mA R 2 0 m A Output Resistance at If = 20mA R oi Dark Resistance after 1 sec If = 0 Ros Dark Resistance after 5 sec (If = 0) Top Operating Temperature Range

in4606

Abstract: IN4150 1N4606 1N4150 1N4450 1N4607 1N460B D035 DT230C DT230H
Contextual Info: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES @ Part Number Ir BV 1OOü A Min. V 1N4451 40 1N4607 85 Vf @ 25°C Max. <nA) 1 Max. @ V r (V) (V) @ Ir(mA) Co @ OV (pf) trr Package T»pe (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.

Contextual Info: • International [ H Rectifier 4Ö5SMSE QQlbflBE 32T ■ INR international rectifier bSE s e rie s ir k .fis o FAST SCR I DIODE and SCR / SCR MAGN-A-pak Power Modules Features ■ ■ I ■ ■ ■ Fast turn-off thyristor Fast recovery diode High surge capability

in4447

Abstract: IN4446 in4449 DIODe IN4446 1n914 equivalent IN4I48 in4448 IN4305 1N4148 1N4149
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M ax. (ri A ) @ V r (V ) V f (V ) M ax. @ I f (m A ) Co @ DV (pf) 1N 914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N 914B 100 25 20 1.00 100 1N 916 100 25 20

DIODe IN4446

Abstract: in4447 in4449 IN4I48 1n914 equivalent in4448 JANTX 1N916 1n916 equivalent IN4446 1N916 JANTX
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M ax. (ri A ) @ V r (V ) V f (V ) M ax. @ I f (m A ) Co @ DV (pf) 1N 914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N 914B 100 25 20 1.00 100 1N 916 100 25 20

Contextual Info: DEMO MANUAL DC2057A LTC3638EMSE High Efficiency, High VIN, 250mA Step-Down Converter DESCRIPTION Demonstration circuit 2057A is a high input voltage, 250mA output DC/DC power supply featuring the LTC 3638. The IC operates with high efficiency Burst Mode® operation

gi diode

Abstract: 1N4001 SMT DIODE 1N4001 SMT zener motorola 18v transformer 1a 1N4001 zener diode diode zener motorola MOTOROLA p6ke hmoo96553 1N4001 diode
Contextual Info: advertisement Power Supplies for Subscriber Line Interface Circuits Design Note 130 Eddie Beville As the demand for world wide networking grows, so will the need for advanced data transmission products. In particular, ISDN services have become popular because of the recent

Contextual Info: • International g«R]Rectifier MflSSMSS DDlbô3D MTS ■ INR INTERNATIONAL RECTIFIER bSE D SERIES IRK.F200 FAST SCR I DIODE and SCR / SCR MAGN-A-pak Power Modules Features ■ ■ ■ ■ Fast turn-off thyristor Fast recovery diode High surge capability

Contextual Info: DEMO MANUAL DC2056A LTC3637EMSE High Efficiency 76V, 1A Step-Down Converter DESCRIPTION Demonstration circuit 2056A is a 76V input, 1A output DC/DC power supply featuring the LTC 3637. The IC operates in a high efficiency Burst Mode® operation and includes

Contextual Info: u im TECHNOLOGY LT13 0 7/LT13 0 7B Single Cell Micropower 600kHz PWM DC/DC Converters FCflTURCS D C S C R IP T IO n • Uses Small Ceramic Capacitors ■ 50jjA Quiescent Current LT1307 ■ 1m A Quiescent Current (LT1307B) ■ Operates with V|N as Low as 1V

transformer prv

Abstract: spark gap 1200v 4ja42ieh20abi 1N4532 SCR Handbook, General electric 1N4529 silicon controlled rectifier 1N4530 1N4531 1N4536
Contextual Info: CONTROLLED AVALANCHE I Silicon Rectifier 35A Avg. 1N4529-30 I 1N4531 SEE PAGE 205 1N4532-34 SEE PAGE 262 1N4536 SEE PAGE 205 Up to 1200V CONTROLLED AVALANCHE RECTIFIERS FROM GENERAL ELECTRIC Feature These Advances in Silicon Rectifier Diode Applications: Self-protection against norm al voltage transients. D issipates up to 12,000 w atts

Contextual Info: / r u n « TECHNOLOGY LTC1174 _ LTC1174-3.3/LTC1174-5 H igh E ffic ie n c y S te p -D o w n a n d In v e rtin g D C /D C C o n v e rte r FCRTUR6S DCSCRIPTIOn • H ig h Effic ie n c y: U p to 9 4 % The L T C 1 1 7 4 is a simple current m ode DC /D C converter

Contextual Info: PD - 91302C International IQ R Rectifier IR F R /U 4 1 0 5 HEXFET Power MOSFET • • • • • Ultra Low O n-R esistance Surface M ount IR FR 4105 Straight Lead (IRFU 4105) Fast Switching Fully Avalanche Rated V dss = 55V RüS(on) = 0.045Î2 Description

hall effect sensor ugn 3019

Abstract: Diode LT 442 Diode LT 404
Contextual Info: Data Sheet 27621.30A§ 3161 HALL-EFFECT SWITCH FOR 2-WIRE APPLICATIONS X This Hall-effect switch is a monolithic integrated circuit designed to operate continuously over extended temperatures to +85°C. The unipolar switching characteristic makes this device ideal for use with a simple

Contextual Info: □IXYS Advanced Technical Information HiPerFET Power MOSFETs ISOPLUS247™ Q CLASS ix f r DSS D 25 10 A 12N100Q 1000 V IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface t rr < 200 ns D S (on) 1.05 Q 1.20 Q N-Channel Enhancement Mode Avalanche Rated, HighdV/dt

Contextual Info: □IXYS Advanced Technical Information VDSS HiPerFET Power MOSFETs IXFR ISOPLUS247™ D ^D25 24 A 500 V 22 A 500 V t rr < 250 ns 26N50 IXFR 24N50 Electrically Isolated Back Surface D S (on) 0.20 Q 0.23 Q N-Channel Enhancement Mode HighdV/dt, Low trr, HDM O S™ Family