DIODE LT 205 Search Results

DD100HB160

Abstract: 1S43 DF30CA DF60A df30aa
Contextual Info: S A NS HA ELECTRIC MF 6 CO T> 37E 7 cm S 4 3 ÖOOOOOb 1 E lT s E M J DIODE . T'Z3-0? ISOLATED TYPE 3 PHASE DIODE MODULE TYPE DF20AA DF20BA DF20CA DF20DB DF30AA DF30BA DF30CA DF30DB DF40AA V A *C 1200-1600 400— 800 800— 1600 400—800 1200-1600 400—800

Contextual Info: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

BZY95C12

Abstract: in152 BZY95-C12 BZY95-C51 BZY95C22 BZY96C5V1 BZY96C6V2 BZY96-C6V8 BZY95-C24 BZY95C24
Contextual Info: SEMITRON INDUSTRIES LT» 43E D • &137 &&^ OOOOISI O B S L C B BZY9S/BZY96/Z2 SERIES Hermetically Sealed Metal Package ■Voltage Regulator Diode Released to BS/CECC 9305-F082 ■Voltage Range 3.0 to 400 Volts 1.5 Watt Steady State ■400 Watt Peak Power

diode lt 205

Abstract: CMLM0205 CMLM0705 CMLM2205 diode marking 53
Contextual Info: Central CMLM2205 M U LT I D I S C R E T E M O D U L E SURFACE MOUNT SILICON SWITCHING NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE TM SOT-563 CASE TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMLM0205 is a Multi Discrete Module ™ consisting of a single NPN

ITB68

Contextual Info: S E M IT R O N I N D U S T R I E S LT D 4 3E J> m B 137&&1 O O O O lb ? 4 E3 SLCB L7SERIES Hermetically Sealed Metal Packaged •Surge Suppressor Diode Voltage Range 5VI to 200 Volts 25 Watt Steady State ■1500 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

diode lt 205

Abstract: thyristor 12V 1A
Contextual Info: /S T SCS-THOMSON ö^O !MSi(gir^(QM(g§ MDS35 DIODE / THYRISTOR MODULE PRELIMINARY DATASHEET FEATURES • V d r m = V r r m UP TO 1200 V ■ lT(AV = 25 A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE : INSULATING VOLTAGE 2500 V{RMS) DESCRIPTIO N The MDS35 family are consist of one rectifier

113 marking code PNP transistor

Abstract: MARKING C75 CMLM2205 CMLM0705
Contextual Info: Central CMLM0705 M U LT I D I S C R E T E M O D U L E SURFACE MOUNT SILICON SWITCHING PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE TM SOT-563 CASE TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMLM0705 is a Multi Discrete Module ™ consisting of a single PNP

IN4745

Abstract: in4749 in4728
Contextual Info: 7" - / / - / 3 LI TE-ON INC CHE D | S 5 3 b 3 b 7 0 0 0 1 4 7 3 3 | IN4728 THRU IN 4764 1 WATT PLASTIC ZENER DIODE V O LT A G E RANGE 3.3 to 100 Volts POWER RATING 1.0 Watts =m = FEA TU RES: DO-41 • • • • Low cost Low zener impedance Excellent clamping

in4742a

Abstract: IN4728A IN4759A 1N4134A 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A
Contextual Info: 1N4728A thru 1N 4764A DO-41 G LASS Micro/semi Corp. ' The diode expens SCOTTSDALE, AZ F o r m o re in fo rm a tio n call: 602 941-6300 SILICO N 1 WATT ZEN ER D IO D E S FEATURES • 3.3 TH R U 100 V OLTS • H ER M ETIC G LA S S PAC KAGE • C O N S U LT FA C TO R Y FOR V O LTA G ES O VER 100 V

mosfet 4456

Abstract: 1RFF312R 4456 mosfet LT 312r 1RFF312
Contextual Info: 3 ] H A R R I S IRFF3 1 0 /3 1 1 /3 1 2 / 3 1 3 IRFF3 1 OR/3 1 1 R/3 1 2 R/3 1 3 R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package TQ-205AF • 1.35A and 1.15A, 350V - 400V • rDS on = 3-Bfl and 5 .0 fl • Single Pulse Avalanche Energy Rated*

ff-310

Contextual Info: • 4 3 0 2 5 7 1 2 3 H A o o s m y o R R 1 1 3 ■ HAS I S I R F F 3 1 0 / 3 1 1 / 3 1 2 / 3 1 3 I R F F 3 1 O R / 3 1 1 R / 3 1 2 R / 3 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TQ-205AF • 1.35A and 1.15A, 350V - 400V

2SK408

Abstract: POWER MOS FET 2sk408 2SK409 VM-50V D15mm
Contextual Info: blE » • 4^1=205 0013055 033 ■ HITM 2SK408,2SK409 HI T ACH I/{OPTOELECTRONIC S IL IC O N N -C H A N N EL M O S F ET 2SK408 HF/VHF POWER AMPLIFIER 2SK409 IE ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Included Gate Protection Diode.

423R

Abstract: f423 IR 423
Contextual Info: 33 HARRIS IR F F420/421/422/423 IR FF420R/421 R /422R /423R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO-205AF • 1.4A and 1.6A, 450V - 500V • rDS on = 3.0(1 and 4.0fi • Singla Pulsa Avalancha Energy Rated* GATE SOURCE

Contextual Info: •i 43G5571 O D S m t S MTS ■ 33 HARRIS HAS IR FF320/321/322/323 IRFF320R/321R /322R /323R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package TO-205AF • 2.0A and 2.5A, 350V - 400V • rDS On = 1-8 fi and 2 .5 0 • Single Pulse Avalanche Energy Rated*

hd74HC4511P

Abstract: HD74HC4511 BCD-to-Seven-Segment HD74HC4511FPEL HD74HC4511RPEL PRDP0016AE-B PRSP0016DH-B
Contextual Info: HD74HC4511 BCD-to-Seven Segment Latch/Decoder/Driver REJ03D0652-0200 Previous ADE-205-539 Rev.2.00 Mar 30, 2006 Description The HD74HC4511 provides the functions of a 4-bit storage latch, a BCD-to-seven-segment decoder, and an output driver. Lamp test (LT), blanking (BI), and latch enable (LE) inputs are used to test the display, to turn off or pulsemodulate the brightness of the display, and to store a BCD code, respectively.

1N4151 equivalent

Abstract: Diode Equivalent 1n4151 1N4532 1N4152 1N4151 1N4153 1N4154 1N4454 MHD618 in4454
Contextual Info: 1N4154 S E E PAG E 205 Silicon r -— i Diodes 1N4151.2.3 1N4454 1N4532,3,4 This fam ily of General Electric silicon signal diodes are very high speed sw itching diodes for computer circuits and general purpose applications. These diodes incorporate an oxide passivated planar struc­

6sf7

Abstract: 6b8g RADIOTRON rca company
Contextual Info: 6SF7 DIODE-SUPER-CONTROL AMPLIFIER PENTODE St N G L E -E N D E D M ETAL T Y PE H e a t e r* Coated Uni po te n tia l Cathode a-c o r d-c vol ts V o ltage 6.3 amp. Current 0.3 D ire c t In te re le ctro de C apacitances:0 Pentode Uni t G rid to PI ate 1nput

Contextual Info: • 430ZZ71 0053731, ?2fl ■ HAS 2N6798 ££j HARRIS N-Channel Enhancement-Mode Power M O S Field-Effect Transistor A ugust 1991 Features Package T0-205AF • 5.5A, 200V B O T T O M V IEW • rDS{on = °-4 n • S O A is Power-Dissipation Limited GATE SO U RCE

Diode LT 350

Contextual Info: OM9019SS OM9021SS OM9020SS FULL WAVE, SINGLE PHASE RECTIFIER BRIDGE IN ISOLATED SIP PACKAGE 15 Amp, 200 To 600 Volts, 35 To 50 ns trr FEATURES Very Low Forward Voltage Very Fast Switching Time Hermetic Metal Package, 6-Pin SIP Low Thermal Resistance Isolated Package

KA2 DIODE

Abstract: DT 7130 IC rc 3150 IRKT 180
Contextual Info: International S Rectifier s e r ie s ir k .fis o FAST SCR I DIODE and SCR / SCR MAGN-A-pak Power Modules Features • ■ ■ I ■ F a st tu rn -o ff th yristo r F a st re c o v e ry d io d e H igh s u rg e c a p a b ility E le c tric a lly is o la te d b a s e p la te

SKE400CA

Abstract: diode 1N 6267 1N SERIES DIODE diode 1.5ke 47A 15KE diode SKE68 SKE400 SKE400C TRANSZORB diode transzorb i-v curve
Contextual Info: 1.5KE6.8 THRU 1.5KE400CA GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 to 440 Volts 1500 Watt Peak Pulse Power FEATURES 1.5KE .205 5.207V .190 (4.826 DIA. .375 (9.527) .360 (9.146) 1.00 (25.4) *.042(1.07) MIN. ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Cesiwid

Abstract: 1,0F 5,5v MAXCAP LT055474A LP055104A 5.5v 0.047f lc055104 LP055105A LC055225A LF055104A
Contextual Info: CESIWID Maxcap Double layer Capacitors Maxcap Double Layer Capacitors T a b le o f C o n t e n t s ^ P r o d u c t In fo r m a tio n a n d 1 Product O v e rv ie w . 3

Photoresistor

Abstract: LT205513 Photoresistor diode optocoupler Photoresistor LT30 LT9914 LT99 diode lt 54 LT2001 LT-99
Contextual Info: LT 99. LT 3011 LT 20. LT 10. LT 10. LT 2 0 . LT 3 0. LT 9 9 . R1 m A Output Resistance at If = 1mA R 2 0 m A Output Resistance at If = 20mA R oi Dark Resistance after 1 sec If = 0 Ros Dark Resistance after 5 sec (If = 0) Top Operating Temperature Range

in4606

Abstract: IN4150 1N4606 1N4150 1N4450 1N4607 1N460B D035 DT230C DT230H
Contextual Info: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES @ Part Number Ir BV 1OOü A Min. V 1N4451 40 1N4607 85 Vf @ 25°C Max. <nA) 1 Max. @ V r (V) (V) @ Ir(mA) Co @ OV (pf) trr Package T»pe (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.