DIODE K363 Search Results

transistor KSP 42

Abstract: KEL5002A PC17L1 KDP6004A ksp 13 replacement KPI-L05 KST-312 PC-17K1 PC-17L1 KPI-261D
Contextual Info: Contents Optoelectronic Sensors Contents 08 Detectors 10 Emitters 12 Photo Interrupters 16 Photo Couplers 21 Photo ICs 24 Optic Receiver Modules 26 LEDs 29 Infrared Transceiver Modules lrDA 31 Fiber Optic Devices(FOD) 33 Fiber Optic Transceivers(FOT) 34 Optical Communication Devices

k3639

Abstract: K379 K3793 ECKN
Contextual Info: Thte document ti ttw w p m i a Corporation CUSTOMER DRAWING Amphand Corporation and b doltamd on ‘ to b * dlMloNd. rapreduood or uMd, In ar M l* bv anyofi* ottitr than Amphenol ngM I* granted to alodooo 4,60+0,04 1 "1 C? Iu REV ISIO N S SYM ECKN DESCRIPTION

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3636 Silicon N-channel power MOSFET Unit: mm 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 For high-speed switching 13.7±0.2 4.2±0.2 Solder Dip • Avalanche energy capacity guaranteed: EAS > 20 mJ

K3636

Abstract: 2SK3636
Contextual Info: Power MOSFETs 2SK3636 Silicon N-channel power MOSFET Unit: mm 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 For high-speed switching 13.7±0.2 4.2±0.2 Solder Dip • Avalanche energy capacity guaranteed: EAS > 20 mJ • Gate-source surrender voltage VGSS = ±30 V guaranteed

52s marking code transistor

Abstract: 52s marking code 52s marking 2SK3633 SC-65
Contextual Info: 2SK3633 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 5.2S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

2SK3636

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3636 Silicon N-channel power MOSFET Unit: mm 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 For high-speed switching 15.0±0.5 φ 3.2±0.1 M Di ain sc te on na tin nc ue e/ d • Features

toshiba a114

Abstract: 2SK3633 SC-65 K3633 200VW
Contextual Info: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)

Contextual Info: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)

2SK3633

Abstract: SC-65
Contextual Info: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)

2SK3633

Abstract: SC-65
Contextual Info: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)

Contextual Info: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type −MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)

Contextual Info: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)

metrahit Multimeter service manual

Abstract: 49a hall sensor Metrawatt METRAPHASE 1 PC Printer Port Controls I-V Curve Tracer GEOHM 3 metrahit 14 service manual PROTECTIVE RELAY CEE MANUFACTURER 1/METRISO 1000v METRACLIP 20
Contextual Info: Table of Contents Measuring Instruments GMC-I Messtechnik GmbH GMC-Instruments Nederland B.V. Daggeldersweg 18 NL-3449 JD Woerden Phone: +31 348 42 11 55 Fax: +31 348 42 25 28 E-mail: info@gmc-instruments.nl www.gmc-instruments.nl GMC-Instruments Austria GmbH

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

diode k363

Abstract: diode A25 AU61 AM3599
Contextual Info: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022 v1.0 December 7, 1999 3* Features Advance Product Specification • High-performance Built-in Clock Management Circuitry - Eight fully digital Delay-Locked Loops (DLLs) • Fast, High-density 1.8 V FPGA Family

P1152

Abstract: ae301 xcv400e XCV100E XCV200E XCV300E XCV1000E XCV1600E XCV600E FG676
Contextual Info: R Virtex-E Pin Definitions Pin Name Dedicated Pin Direction Description GCK0, GCK1, GCK2, GCK3 Yes Input Clock input pins that connect to Global Clock Buffers. These pins become user inputs when not needed for clocks. M0, M1, M2 Yes Input Mode pins are used to specify the configuration mode.

GSR 10,8

Abstract: DLL5 BG432 ic 404 BB112 equivalent
Contextual Info: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.0 April 2, 2001 Preliminary Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 Kb to 4 Mb system gates - 130 MHz internal performance (four LUT levels)

K2466

Abstract: H1342 AU61
Contextual Info: 901592 Virtex -E 1.8 V Field Programmable Gate Arrays R DS022 v1.5 July 10, 2000 3* Features Preliminary Product Specification High-performance Built-in Clock Management Circuitry - Eight fully digital Delay-Locked Loops (DLLs) • Fast, High-density 1.8 V FPGA Family

A21n

Abstract: digital dice design VHDL k41 dob Quadrature Decoder Interface ICs
Contextual Info: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022 v1.9 February 12, 2001 Preliminary Product Specification Features • • • • High-Performance Built-In Clock Management Circuitry Densities from 58 Kb to 4 Mb system gates - Eight fully digital Delay-Locked Loops (DLLs)

XCV1000E

Abstract: XCV1600E XCV400E XCV600E XCV2000E XCV200E XCV300E XCV50E DS022-1 XCV100E
Contextual Info: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.3 July 17, 2002 Production Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels)

ao21

Abstract: XCV300E-6PQ240C
Contextual Info: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022 v1.6 August 1, 2000 Preliminary Product Specification Features • • • - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels) - Designed for low-power operation

K363 equivalent

Abstract: n345 AF125 XCV1000E d30122 A281 horizontal driver transistor D155 AY102 j281 pioneer amplifier an214
Contextual Info: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022 v1.7 September 20, 2000 Preliminary Product Specification Features • • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels)

g4aoo

Abstract: XCV1000E CG1156
Contextual Info: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.0 April 2, 2001 Preliminary Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 Kb to 4 Mb system gates - 130 MHz internal performance (four LUT levels)

diode T25-4

Abstract: IC AN214 N345 pioneer amplifier an214 XCV1600E ac3 amplifier circuit diagram AN214 amplifier horizontal driver transistor D155 K235 XCV300E-6PQ240C
Contextual Info: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.2 November 9, 2001 Preliminary Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels)