DIODE IT 9722 Search Results

A445

Abstract: PM 4A
Contextual Info: YG802C06HOA SCHOTTKY BARRIER DIODE : Features Insulated p ac ka g e b y fully m o ld in g . • te V F m m & m L ow V k Connection Diagram S u p e r h ig h speed s w it c h in g . • •fi'-i—mmz'thMiztote H ig h reliability by planer d es ig n. : Applications

Contextual Info: ESAE83-006 6 oa Y 7 ¥ < it - Y SCHOTTKY BARRIER DIODE : Features • ffivr Low Vp Super high speed switching. C o n n e c tio n D ia g ra m High reliability by planer design. A p p lic a tio n s High speed pow er switching. M a x im u m R atings and C ha ra cte ristics

Contextual Info: ESAD83-006I30A SCHOTTKY BARRIER DIODE • 4$ f t : Features • te V F Low V F • S uper high speed sw itchin g. « it ■ z i'— f — C onnection D iagram High reliability by planer design. ■ f f l i i : A p p lica tio n s • a » H igh speed pow er sw itchin g.

G802C04

Abstract: G802C
Contextual Info: YG802C0400A *± /J '> 3 SCHOTTKY BARRIER DIODE : Features • s ty # Insulate d package by fu lly m o ld in g . • te V F Low V f Connection Diagram S u per h ig h speed s w itc h in g . • 7V — f f it t H ig h re lia b ility by p la n e r d e s ig n .

Contextual Info: E R A 8 2 - 0 4 o 6 a i * ± /J • fl- ï fé '+ îi : Outline Drawings SCHOTTKY BARRIER DIODE -N«¡25 1 I 2 5 min' 00.56 25 m,n I 3.0 : Features • 1ftVF Low vF : Marking *17- 3 —H : Ö Super high speed sw itchin g. C o lo r c o d e : W h it e • -f\s—r - ttiist ¿asftiatt

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

ESJA8z

Contextual Info: This m a te ria l and the In lo rm a llo it herein 1» llio p ro p erly ol Fuji Electric C o .,U d . They halt be neither re p r o d u c e d , c o p ie d , len t, or d lac lo te d In any way w h a lio e v e r lor the use of any third party nor uaed for Ihe m an u factu rin g p u rp o se* w ith o u t

Fuji Electric SM

Contextual Info: SPECIFICATION Device Name_ : High Voltage Si I icon Diode T y p e Name_ E S J A 8 3 " * 1 6 A _ Spec. : No._ :_ Fuji Electric Co.Ltd. Matsumoto Factory DATE NAME APPROVED Fuji Electric Co.,Ltd.

Fuji Electric SM

Contextual Info: This mut er I nt und the Information herein I» 111» pr up er t y ol Fuji Electric Co.,Lid. They shall be neither reproduced, copied, lent, or disclosed In any way w hntioever lor Ihe use of any third party nor uied lor Ihe mnnufeclurlnd purposes w ithout

FUJI ELECTRIC DIODE

Abstract: 18kv diode
Contextual Info: Device Name Tvoe Name DATE CHECKED N AM E ì : DWG.NO. Thli material and the Information twain la the properly of Fuji Electric Co.Ltd. They thall be neither reproduced, copied, lent, or dlecloied In nny way w helnosver for the <no of nny Ihlrd party nor used tor lite rnumilnctiirlng purposes w llliool

Contextual Info: Thli m a te ria l and Mia Inform ation Jim ein li ihn iiro p o rly o Fuji Electric C o.,L td. They shall be neither r e p ro d u c e d , c o p ie d , le n i, or d lsc lo ssd In any way w h a ts o tv e r for the une of any third parly nor used lor the m an u factu rin g pur p o te i w ith o u t

UV diode 254 nm

Abstract: CLE509 diode led uv UV led 390 nm peak wavelength 254 nm uv LED
Contextual Info: CLE509 Preliminary Nine Element, 390nm UV LED Array Dome Lens Can, Hermetically Sealed Clairex Technologies, Inc. February, 2006 0.156 3.96 0.136 (3.45) 0.165 (4.19) 0.145 (3.68) 0.100 (2.54) dia. 1.00 (25.4) min. 0.215 (5.46) 0.205 (5.21) (connected

Contextual Info: CLE509 Preliminary Nine Element, 390nm UV LED Array Dome Lens Can, Hermetically Sealed Clairex Technologies, Inc. February, 2006 0.156 3.96 0.136 (3.45) 0.165 (4.19) 0.145 (3.68) 0.100 (2.54) dia. 1.00 (25.4) min. 0.215 (5.46) 0.205 (5.21) (connected

1B04 transistor

Abstract: power transistor bjt 1000 a 1B04 1B04 transistors 130Z-100 30AF 30A two transistors 100equivalent transistor equivalent
Contextual Info: 2-Pack BJT 1000 V ,030" Av 2DI30Z-100 / I l/U ä l i Outline Drawings POWER TRANSISTOR MODULE F e a tu re s • ftWBE • 7y — High Voltage U >$¥<4 =fr — KrtSS • ASO Including Free Wheeling Diode Excellent Safe Operating Area • W&M insulated Type

Contextual Info: FU JI aiL.etcu'üöüE 2SK2226-01L,S N-channel MOS-FET F -lll S e rie s 150V > Features - 0,08Q 20A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control General Purpose Power Amplifier

bjt 100a

Abstract: 2D11002-100 power BJT 100A power transistor bjt 1000 a TRANSISTOR 0156 Transistor BJT 100A S1m diode ifrd W-J M6 M210
Contextual Info: Ä ID- / I1 2 2-Pack BJT 1000 V 100 a 0 2^ - ' V 1 0W0 V0 W 1 I Outline Drawings POWER TRANSISTOR MODULE i Features • i6 IiJ ± High Voltage # 7 ' J —sfc'f U > 9 ¥ A =t — KF*9/8 • ASO tf'jAi' Including Free Wheeling Diode Excellent Safe Operating Area

ESJA59-14A

Abstract: H04-004 FUJI ELECTRIC CO.,LTD
Contextual Info: SPECIFICATION Device Name : High Voltage Si 1icon Diode Type Name : ESJA59-14A Spec. No. Fuji Electric Co.Ltd. Matsumoto Factory DATE NAM E APPROVED Fuji Electric Co.,Ltd. DRAWN CHECKED > I D C H 0 4 -0 0 4 -0 7 J. 1. SCOPE This specification provide the ratings and the requirements for high voltage

Fuji Electric SM

Contextual Info: Thli m slerld l and the Information tier«ln is he property öl Fuji Et«ctric Co.,U d. They »hull be neither reproduced, c o jjls d . |en , gr disclosed In sny way w t> p |»«v*r for (Im uso oT nny Ihlrd psrly nor used lor the man-ufncturliip p u rp ose! w ithout

diode ja8

Contextual Info: This m Rlsrinl und the Information lier sin Is ths properly ol Fuji Electric Co.Ltd. They shall bo neither reproduced, co p ie d , lent, or disclosed in any w hatso ever for the ose of any third party nor used tor the manufacturing purposes w ithout the express written consent of Fiji Electric Co.,Ud.

Contextual Info: This m aterial und the Information liar ein is he properly of Fuji Electric Co.,U4. They lhall be neither reproduced, copied, lent, or disclosed In any way whatsoever lor Itia use ol any third parly nor uied tor Ihe munii!« during purpoi«» wllhoul the exprass written consent ol Fuji Electric Co. .Ud

Contextual Info: 4R3TI30Y-080 k »i m S ± / < 7 - ;ES>a.-;U u x » a t e g s ? 3 . - ju DIODE and TYRISTOR MODULE : Features —*> 3 / - f G l a s s Passivation Chip • • Easy Connection • Insulated Type • d i/d t flit 0 * * 3 I ' Large d i/d t • d v /d t Large d v /d t

Contextual Info: F U JI lä 'U J M s u 'ü ü U K 2SK1278 N-channel MOS-FET F-V Series 500V > Features - l,lß 10A 100W > Outline Drawing Include Fast Recovery Diode High Voltage Low Driving Power > Applications - Motor Control Inverters Choppers > Maximum Ratings and Characteristics

Contextual Info: p u jr i 2SK2215-01 L,S N-channel MOS-FET FAP-IIA Series > Features - 600V 1 ,2 Q 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications -

L03A

Contextual Info: FU JI stuMoruajK 2SK2099-01L,S FAP-IIA Series > Features - N-channel MOS-FET 250V 0,85Q 6A ' 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Avalanche Proof > Applications