DIODE IT 9722 Search Results

ESAC83M-006

Contextual Info: ESAC83M -006 2 oai '> 3 -yh+— -f=t—K SCHOTTKY BARRIER DIODE : Features • 3i Ufa it s e it^ t i t t y v -f Insulated package by fully m o ld in g . • 1&Vh Low V k • Connection Diagram i= * i' Super high speed sw itching. • ~ f l '—t *B1£

MARK 7 DIODE

Abstract: 2FI50F
Contextual Info: 2 R 5 F 2 x 5 0 A Ê • W F ± / n9 - ^ il - ; u I Outline Drawings FAST RECOVERY DIODE MODULE ■ * t t S : Features • Short Reverse Recovery Time • it&l&iWl&tfM.'M • Variety of Connection Menu Insulated Type ■ f f l i i i A pplications • Arc-Welders

YG802N09

Abstract: YG802C09
Contextual Info: YG802C N 09( ioa) SCHOTTKY B A RRIER DIODE : Features Insulated package by fully m o ld in g . • te V F Low V F • Connection Diagram T . A 'V + V 'f Super high speed sw itchin g. • fa it YG 802C 09 High reliability by planer d e s ig n .’ {¿)Q PI

A445

Abstract: PM 4A
Contextual Info: YG802C06HOA SCHOTTKY BARRIER DIODE : Features Insulated p ac ka g e b y fully m o ld in g . • te V F m m & m L ow V k Connection Diagram S u p e r h ig h speed s w it c h in g . • •fi'-i—mmz'thMiztote H ig h reliability by planer d es ig n. : Applications

ERB06

Contextual Info: ERB06HA : Outline Drawings FAST RECOVERY DIODE M ft-Bk • Features • t ) ? — TV £* |fg?jv : Marking M ost suitable fo r c o lo r T .V . dam per • w r tm z V M E .ir 'fa ' * 7 - 3 - K: f t High voltage by mesa design. C o lo r code : B lu e • B it

fuji 2DI 50Z-120

Abstract: cf rh transistor fuji 2di Collmer Semiconductor 2DI Vceo-1200V
Contextual Info: 20/ 50Z-120 FU JI ET030E 2-Pack BJT 1200 V 50 A ✓ < 7 — POW ER TR A N S ISTO R M O D ULE ' Features • iS it/± • 7 U— High Voltage lJ — Krt/R Including Free Wheeling Diode • ASO i ? & \ s Excellent Safe Operating Area • t&W iM Insulated Type

Contextual Info: ESAE83-006 6 oa Y 7 ¥ < it - Y SCHOTTKY BARRIER DIODE : Features • ffivr Low Vp Super high speed switching. C o n n e c tio n D ia g ra m High reliability by planer design. A p p lic a tio n s High speed pow er switching. M a x im u m R atings and C ha ra cte ristics

Contextual Info: ESAD83-006I30A SCHOTTKY BARRIER DIODE • 4$ f t : Features • te V F Low V F • S uper high speed sw itchin g. « it ■ z i'— f — C onnection D iagram High reliability by planer design. ■ f f l i i : A p p lica tio n s • a » H igh speed pow er sw itchin g.

G802C04

Abstract: G802C
Contextual Info: YG802C0400A *± /J '> 3 SCHOTTKY BARRIER DIODE : Features • s ty # Insulate d package by fu lly m o ld in g . • te V F Low V f Connection Diagram S u per h ig h speed s w itc h in g . • 7V — f f it t H ig h re lia b ility by p la n e r d e s ig n .

Contextual Info: E R A 8 2 - 0 4 o 6 a i * ± /J • fl- ï fé '+ îi : Outline Drawings SCHOTTKY BARRIER DIODE -N«¡25 1 I 2 5 min' 00.56 25 m,n I 3.0 : Features • 1ftVF Low vF : Marking *17- 3 —H : Ö Super high speed sw itchin g. C o lo r c o d e : W h it e • -f\s—r - ttiist ¿asftiatt

200Z-100

Contextual Info: mi F U JI [IT L M g ü M lE 1-iooovJ T 200 a 2 0 U0 7^ - 1I 0U 0 U • L r» ^ U l £ /< 7 — POWER TRANSISTOR MODULE f 13 ■ 21 Outline Drawings 29 : F e a tu re s • ¡SIiJ± High Voltage V • 7 'J — 4 • ASO M S i ' KF*9j& Including Free W heeling Diode

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

dc dc sepic 24V converter

Abstract: LT3758 sepic converter 550khz marking G5 MOSFET 3758f 1N4148 LT3758EMSE 6 pin current control forward dc to dc converter 1n4* rectifier Power Mosfet 75V 120A
Contextual Info: LT3758 High Input Voltage, Boost, Flyback, SEPIC and Inverting Controller DESCRIPTION FEATURES n n n n n n n n n n n Wide Input Voltage Range: 5.5V to 100V Positive or Negative Output Voltage Programming with a Single Feedback Pin Current Mode Control Provides Excellent Transient

ESJA8z

Contextual Info: This m a te ria l and the In lo rm a llo it herein 1» llio p ro p erly ol Fuji Electric C o .,U d . They halt be neither re p r o d u c e d , c o p ie d , len t, or d lac lo te d In any way w h a lio e v e r lor the use of any third party nor uaed for Ihe m an u factu rin g p u rp o se* w ith o u t

HIGH VOLTAGE DIODE 6kv

Abstract: ESJA58-06A DIODE 6kv
Contextual Info: DATE NAME CHECKED _ —" t DWG.NO. m a la ria l and Hie Inform ation herein Is Ihe prop erty ol TuJI Electric Co.,Lid. They shall be neither re p ro d u c e d , co p ie d , lent, or d isclo se d In any way w h a ts o e v e r lor the mo ot a n y third party nor used for the m u n tiln ch irin g p u rp o se s w ith o u t

Fuji Electric SM

Contextual Info: SPECIFICATION Device Name_ : High Voltage Si I icon Diode T y p e Name_ E S J A 8 3 " * 1 6 A _ Spec. : No._ :_ Fuji Electric Co.Ltd. Matsumoto Factory DATE NAME APPROVED Fuji Electric Co.,Ltd.

Fuji Electric SM

Contextual Info: This mut er I nt und the Information herein I» 111» pr up er t y ol Fuji Electric Co.,Lid. They shall be neither reproduced, copied, lent, or disclosed In any way w hntioever lor Ihe use of any third party nor uied lor Ihe mnnufeclurlnd purposes w ithout

ESJA53-16A

Abstract: H04-004 ESJA53-ODA
Contextual Info: Spec. DATE DRAWN CHECKED NAME - - - — - DWG.N0. Thl» material und Ih» Information herein la tie pruder ly ol Fuji Electric Co.,Lid. They ihall be neither raproducad. copied, lent, or dlaclotad In any way whatioever lor thn use of any third party nor uied lor the manufacturing purposes without

FUJI ELECTRIC DIODE

Abstract: 18kv diode
Contextual Info: Device Name Tvoe Name DATE CHECKED N AM E ì : DWG.NO. Thli material and the Information twain la the properly of Fuji Electric Co.Ltd. They thall be neither reproduced, copied, lent, or dlecloied In nny way w helnosver for the <no of nny Ihlrd party nor used tor lite rnumilnctiirlng purposes w llliool

diode 060

Abstract: power transistor bjt 1000 a 1150Z-100 M210 power BJT 150A bs245
Contextual Info: 2 -Pack BJT 1000 V 150 a 2DI150Z-100 Ä I-/I • V JK J * ! Outline Drawings / < 7 - h :7 > i > X 9 * ' ? n . - U POWER TRANSISTOR MODULE Features • S H E : High Voltage t7 U — ¥<4 # ASO If f eX' • KrtMc including Free Wheeling Diode Excellent Safe Operating Area

Contextual Info: Thli m a te ria l and Mia Inform ation Jim ein li ihn iiro p o rly o Fuji Electric C o.,L td. They shall be neither r e p ro d u c e d , c o p ie d , le n i, or d lsc lo ssd In any way w h a ts o tv e r for the une of any third parly nor used lor the m an u factu rin g pur p o te i w ith o u t

KRT 30

Abstract: M107
Contextual Info: 1-Pack BJT FUJI 1 D I 400A-120 M U M Ë ïïr a iÊ y< 7 - 1200 V 400 A -;u : Outline Drawings POWER TRANSISTOR MODULE 22 50 22 ! Features • ¡SIÎEE High Voltage # 7 tj — ij Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type

ph-200 diode

Abstract: ESJA89-14A
Contextual Info: m a t e r i a ! and lha h e re in Is the p ro p e rly ol third party nor used or the m a n u f a c tu r in g p u r p o s e s Ute express written c o n te n t of Fiji Electric C o.,L td. w ith o u t sh all be n e ith e r r e p r o d u c e d , c o p i e d ,

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic