DIODE IR 4570 Search Results

diode ir 4570

Abstract: common anode shd rectifier
Contextual Info: SHD117117 P/N SHD117117(P/N)A SHD117117(P/N)B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4570, REV. – HERMETIC POWER SCHOTTKY RECTIFIER Low Forward Voltage Drop Add Suffix "S" to Part Number for S-100 Screening. Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

Contextual Info: SHD117117 P/N SHD117117(P/N)A SHD117117(P/N)B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4570, REV. – HERMETIC POWER SCHOTTKY RECTIFIER Low Forward Voltage Drop Add Suffix "S" to Part Number for S-100 Screening. Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

BPV10

Abstract: Avalanche photo diode compatible with 850 nm LED AN243 color sensitive PHOTO TRANSISTOR DK-2750 TSHF5400 infrared 950nm United Detector Technology, silicon photodiode AN243 microchip
Contextual Info: M AN243 Fundamentals of the Infrared Physical Layer Author: Paul Barna Microchip Technology Inc. Steve Schlanger Aegis Technologies LLC INTRODUCTION Infrared light, commonly referred to as “IR”, is a common, easy-to-use, low power and low-cost media to

ifu320

Abstract: fu320 IFR321 fr320
Contextual Info: IRFR320/321/322 IRFU320/321/322 HARRIS N-Channel Power MOSFETs Avalanche-Energy-Rated A u g u st 1991 Packages Features IR F U 3 2 0 /3 2 1 /3 2 2 T O -2 5 1 A A TOP VIEW • 2.6A and 3.1A, 350V and 400V • rDS on = 1 .8 0 fl and 2.5CI > SOURCE • Single Pulse Avalanche Energy Rated

diode ys2 100

Abstract: N4921 N4918 1N4000-series LA431 n4919 1n4000 DIODE 1n4000 sERIES DIODES 1N823 1N34* diode
Contextual Info: INTERNATIONAL SEMICOND •=1000370 0000007 T40 « I S E M 41E T H t- ~o JEDEC REGISTERED, TEMPERATURE 1N4148 SWITCHING DIODE COMPENSATED VOLTAGE REFERENCE DIODES (DO-7 Package MAXIMUM RATINGS MECHANICAL O pe rating Tem perature: -6 5 °C to + 2 0 0 °C H e rm e tic a lly Sealed DO-35

ns102

Abstract: D635-15 Samsung SD650-5 650nm 5mw, 9MM knight rider NS102A SD650-5 650nm 5mw, 9MM 650NM laser diode 5mw NM808-30 sniper EPM650-5
Contextual Info: NVG, Inc., - Laser Diodes and Laser Diode Modules LASER MODULES LONG LASER DIODES SHORT WAVELENGTHS WAVELENGTHS NVG, Inc. manufactures laser diodes, laser modules and laser products. Visible and infrared, high and low power. Various wavelengths available - 635, 640, 650, 660, 670, 690, 780, 808, 840, 904, 980

step recovery diode application

Abstract: MA44600 step recovery diodes MA43002-91 ODS-93 MA43000 MA43543 MA43592 "Step Recovery Diode" step recovery diode
Contextual Info: RoHs Compliant Silicon Step Recovery Diodes Features Absolute Maximum Ratings @ TA=+25 °C • Low Transition Times • Tight Capacitance Ranges • High Voltage and Low Thermal Resistance for Higher Input Power • Lead-Free RoHs Compliant Description and Applications

DIODE 1N827

Contextual Info: IN T E R N A T IO N A L •=1000370 0000007 T 40 « I S E M 41E S EM IC O N D JEDEC REGISTERED, TEMPERATURE COMPENSATED VOLTAGE REFERENCE DIODES DO-7 Package MAXIMUM RATINGS MECHANICAL Operating Temperature: -65°Cto+200°C Herm etically Sealed DO-35 Storage Temperature: -65°C to +200°C

MA44600

Abstract: step recovery diode MA43000 MA43543 MA43592 ODS-30 "Step Recovery Diode" ODS-93
Contextual Info: MA43000, MA44600 Series Silicon Step Recovery Diodes Rev. V5 Features • Low Transition Times • Tight Capacitance Ranges • High Voltage and Low Thermal Resistance for Higher Input Power • Lead-Free RoHS* Compliant Description and Applications The MA44600 series of Step Recovery diodes is designed for use in low and moderate power multipliers

ODS-93

Abstract: MACOM STEP RECOVERY DIODES ACOM ODS-91 MA44621A
Contextual Info: MA43000, MA44600 Series Silicon Step Recovery Diodes M/A-COM Products Rev. V5 Features • Low Transition Times • Tight Capacitance Ranges • High Voltage and Low Thermal Resistance for Higher Input Power • Lead-Free RoHS* Compliant Description and Applications

PIC16C628

Abstract: resistor* 22k ohm EN60929 12V T8 ballast circuit pic16f628p dali bridge dali pic AN IR2159 PIC16f628 fluorescent ballasts 36w TRANSISTOR
Contextual Info: AN809 Digitally Addressable DALI Dimming Ballast FIGURE 1: Authors: DALI DIMMING BALLAST Ross Fosler Microchip Technology Incorporated Cecilia Contenti International Rectifier Tom Ribarich International Rectifier INTRODUCTION This reference design is a high efficiency, high power

pic16c628

Abstract: pic16f628p resistor* 22k ohm br1 BRIDGE PIC16F628 Z9265-A EN60929 IR2159 rs-232/dali dali source code
Contextual Info: AN809 Digitally Addressable DALI Dimming Ballast FIGURE 1: Authors: DALI DIMMING BALLAST Ross Fosler Microchip Technology Incorporated Cecilia Contenti International Rectifier Tom Ribarich International Rectifier INTRODUCTION This reference design is a high efficiency, high power

418B-04

Abstract: MUR3020PT 1n5822 trr MR760RL SS16 SMB MBR2 mur460
Contextual Info: Application Specific Rectifiers Table 1. Low VF Schottky Rectifiers Device IO Amps VRRM (Volts) VF @ Rated IO and TC = 25°C Volts (Max) IR @ Rated VRRM mAmps (Max) 0.5 1 1 2 1 4 8 10 20 25 25 25 25 30 40 200 400 400 600 20 20 10 10 30 10 35 35 30 35 35

Contextual Info: M MCP2140 IrDA Standard Protocol Stack Controller With Fixed 9600 Baud Communication Rate Package Types Features ® • • • • • Low power, high-speed CMOS technology Fully static design Low voltage operation Industrial temperature range Low power consumption

zd2500

Abstract: WT 7520 CS 601 thyristor TIC125 T920 thyristor power diode 1000 volt 700 amper thyristor 100 amper diode lt 8220 cs 1694 eo saa 1070
Contextual Info: POWER SEMICONDUCTORS INC 1TE D • 7 2 ^ 1 4 ^ 0 D0003b4 1 ■ POS " T -O l-0 1 T '- Z S - C > | RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature Symbol Units ' t RMS

WT 7520

Abstract: diode lt 8220 SAC 1630 L saa 1070 tic125 tsumu T920 thyristor GE 1780 scr 3f scr thyristor power diode 1000 volt 700 amper
Contextual Info: POWER SEMICONDUCTORS IN C 1TE D • 72^14^0 D0003b4 1 ■ POS "T-Ol-01 T'-ZS-C>| D PACK THYRISTOR POWER PACK TH YR ISTO R S 28mm. <25 mm.) RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature

Contextual Info: 13.2mm 0.52INCH SINGLE DIGIT NUMERIC DISPLAY Part Number: SA52-11CGKWA Green Features Description z 0.52 inch digit height. The Green source color devices are made with AlGaInP on z Excellent character appearance. GaAs substrate Light Emitting Diode. z Easy mounting on P.C. boards or sockets.

str f 6264

Abstract: BROWN BOVERI str 6264 uge 1112 AY4 rectificadores "sim welding" diagram Kopp MS 85 ABB CO-8 CI 6264 din 6900
Contextual Info: High Voltage rectifiers Hochspannungsgleichrichter Edition 97 Reg. Nr. 2743-02 Symbols and Definitions Kurzzeichen und Begriffe a Acceleration a Rüttelfestigkeit IF AV M IF(RMS) IFSM IR Maximum mean forward current Maximum RMS forward current Surge forward current

200B

Abstract: DK-2750 PIC16C782 TB062 pic ir based remote control
Contextual Info: TB062 High Power IR LED Driver Using the PIC16C781/782 THEORY OF OPERATION Author: Keith Curtis Microchip Technology Inc. INTRODUCTION Early infrared IR remote control systems employed a simple on-off modulation of an IR LED to transmit the control data between the remote control and the appliance. Unfortunately, while this method was simple to

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

BH45-704A

Abstract: BH 27 701A facon bd BH22-601A bl 44 704 facon facon bh 27 701 GB 44-706 facon bf facon VX230
Contextual Info: FACON 45E D • 345b503 OOOOOlù 5 « F C N FACON SEMICONDUCTEURS/SEMICONDUCTORS T-23-0\ m ouldings m ou lages Vr r m Types V V RMS re c o m ­ m en d ed m ax (V) ■d on re­ sistive load s u r c h arg e résis tive *d s m / *fsm Ip per diode @ VR U se

"Digital Potentiometer"

Abstract: photodiode eyes response MCP41010 AB-057 AN692 ct Potentiometer Jerald Graeme pyrometers IR photodiode photovoltaic sensor
Contextual Info: AN692 Using a Digital Potentiometer to Optimize a Precision Single Supply Photo Detection Circuit Author: Photodiode Characteristics Bonnie C. Baker, Microchip Technology Inc. A photodiode can be operated in the photovoltaic mode or photoconductive mode as shown in Figure 2.

T2D8

Abstract: JOB-0045 PA1269 kemet ceramic esr 1nF MIC68D10-5160W-LF3 bob smith RJ45-magnetics ERJ3EKF panasonic PS2501-1-H LQH43CN100K03L
Contextual Info: ெࡔࡔॆӷ‫ິࠅ༹ڞ‬ ᆌᆩጀ๥1408 Leo Chang 2005౎12ሆ 1.0āᆅჾ āāᇡኪDP83865ࢅLM5070‫ڦ‬ຕ਍๮֩तഄ޹े႑ āāᅜ໿ྪઍ‫ۉ‬DŽPoEDžरຍ࠽‫ݘ‬๑ᆩᇀྪஏ‫ࢅࣆۉ‬࿮ တLj൩‫ݡ‬࿚ெࡔࡔॆӷ‫ྪڦິࠅ༹ڞ‬በǖ

4570 SOP-8

Abstract: APM4425 APM4425K STD-020C ISD21
Contextual Info: APM4425K P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-11A, D RDS ON = 11mΩ(typ.) @ VGS = -10V RDS(ON) = 15mΩ(typ.) @ VGS = -4.5V • • • • D D D S Super High Density Cell Design S S Reliable and Rugged G Top View of SOP − 8