INS333-IN5388
Abstract: IN5333 Zener Diode colour diode lt 238 1N53588 1N53468 1N533 1N53518 1N53838 1N5333B
Contextual Info: SEtllTRON INDUSTRIES LTD 43E » • 613760^ 0000161 1 « S L C B IN5333-IN5388 series High Power Zener Diode Voltage Range 3V3 to 200 Volts 5.0 Watt Steady State FEATURES ■ High power regulator diode ■ High surge capabilities ■ 100% Tested ■ -65°C to +200°C
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ins333-in53881n5375b1n5376b1n5377b+151n5378b1n5379b1n5380b1ns381b1n5382b1ns383bin5333zener diode colourdiode lt 2381n535881n534681n5331n535181n538381n5333b
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1M5378B
Contextual Info: SEtllTRON INDUSTRIES LTD 43E » • 613760^ 0000161 1 « S L C B IN5333-IN5388 series High Power Zener Diode Voltage Range 3V3 to 200 Volts 5.0 Watt Steady State FEATURES ■ High power regulator diode ■ High surge capabilities ■ 100% Tested ■ -65°C to +200°C
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in5333-in5388do-35do-41do-15+2do-201ad1m5378b
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DA573S6
Abstract: diode marking 4c a1383 A1383 transistor Marking 4c
Contextual Info: DA573S6 Ordering number : ENA1383 SANYO Semiconductors DATA SHEET DA573S6 Silicon Diffused Junction Type Diode ESD Protection Diode Features • • • Contact discharge 30kV guarantee IEC61000-4-2 . 6-pin package containing 5 devices. Halogen free compliance.
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da573s6ena1383iec61000-4-2150pf+5a1383-4/4diode marking 4ca1383a1383 transistormarking 4c
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gold metal detectors
Abstract: IN5711 in5711 equivalent diode ring mixer PN Junction Diode oscillator Metal Detector doppler radar p-n junction diode digital metal detector Silicon Point Contact Mixer Diodes
Contextual Info: Schottky Barrier Diodes Characteristics A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The resulting non-linear diode is similar to point contact diodes and p-n junction diodes. The
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an98826/ibgold metal detectorsin5711+8in5711 equivalentdiode ring mixerpn junction diode oscillatormetal detectordoppler radarp-n junction diodedigital metal detectorsilicon point contact mixer diodes
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IN5225
Abstract: 1N4154 marking DO35 DO-35 BLUE CATHODE
Contextual Info: 1N4154 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: Features: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode.
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1n4154do-35in5225marking do35+1do-35 blue cathode
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108thmt11152n3303fpt100 phototransistor+7ua739 equivalenttransistor bc 554 pnpmt1039ft2974fairchild 2n3565fd6666 diodetransistor npn epitaxial silicon sst 117
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1S923
Abstract: IN5225 175 WIV High Switching
Contextual Info: 1S923 1S923 General Description: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode. 0.500 Minimum 12.70 Typ 1.000
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Contextual Info: ASI3486 ZERO BIAS SCHOTTKY DIODE DESCRIPTION: The AS I3486 is a Silicon Schottky Barrier Diode Designed for High Sensitivity Zero Bias Detector Applications up to 10 GHz. FEATURES INCLUDE: • Replacement for HP H S C H 3486 • -56 dBm TssTypical @ 10 G Hz
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IN5711
Abstract: Silicon Point Contact Mixer Diodes Microwave zero bias detector diodes
Contextual Info: W O ñ H EW LETT' 1"KM PACKARD Schottky Barrier Diodes C haracteristics A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The resulting non-linear diode is similar to point contact diodes
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an98826/thin5711silicon point contact mixer diodes+1microwave zero bias detector diodes
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ir10 diode
Abstract: LM5142 lm568 diode IR10 1M5603 IN5139 MV140 diode 718
Contextual Info: 1M-9/93 IDXDSD Series 1M1401 - 1M1412 1M6520 - 1M6525 1M5461A-1M5476A SURFACE MOUNT TUNING DIODES I electronics,. Many popular axial leaded glass packaged tuning diode types are now available in the MSI 1M Case for surface mount assemblies. The tuning diode chips, mounted on
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1m-9/931m14011m14121m6520+141m65251m5461a-1m5476aor1m51431x51441m51451m5146ir10 diodelm5142lm568diode ir101m5603in5139mv140diode 718
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1N1743
Abstract: IN5234 IN5008 1N4202 zener diode 1N PH 48 diode 1n1418 1NS232 zener diode c51 ph 1n587 1N4465
Contextual Info: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART Containing all JE D E C registered Zener diodes. This popular reference chart contains highlight information on all JE D E C registered Zener diode and rectifier types as well as Microsemi types. The following Codes are used:
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1n2251n22601n2271n228+161n2291n230o1n231d1n232bzx83bzx971n1743in5234in50081n4202zener diode 1n ph 48diode 1n14181ns232zener diode c51 ph1n5871n4465
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IN5225
Abstract: 1N486B DO-35 PACKAGE liner marking code
Contextual Info: 1N486B General Description: A General Purpose, Low Leakage Diode in the DO-35 package. These diodes couple very low reverse leakage current with high forward conduction and high reverse blocking voltage. General Purpose Low Leakage Diode This product is light sensitive, any damage to the body coating
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1n486bdo-35in5225do-35 package+1liner marking code
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IN34A
Abstract: 1N60C IN82A IN67A in69a IN56A 1n62 diode IN34 diode 1N142 diode diode IN97
Contextual Info: Iñ DE I b l E E m ? ? D D 0 D D 7 D 4 612 24 77 MICR OWA VE DIODE CORP 18C 0 0 0 7 0 D T - Of ón CROWAVE DIODE CORPORATION . GERMANIUM DIODES r . J r JN34 1N34 4AS A IN3 1 N 3 5 IN38 1N38A 1 N3 1N 4SB 8 1 1N N5 510 1 1N N5S2 2A 1 1N N5 54 4A 1N56 IN5 6 A
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deible24771n34ain34as1n38a+151n52a1n54ain56a1n5836a1n1271n127ain34a1n60cin82ain67ain69a1n62 diodein34 diode1n142 diodediode in97
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IN5908
Abstract: IN5907 IN5908 diodes zener diode Izsm IN5908 ON IIN5908 transient absorption zener D027A IIN5907 ZENER DIODE 8.5 V 5W
Contextual Info: POWERZORB IN5907 IN5908 1.5 KW Transient Absorption Zerier Diode Transient Absorption zener diodes specifically designed to protect in tegrated circuits which require 5.0 V or lower power supplies. IN5907 IN5908 Psurge- - 1.5KW 1.5KW
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in5907in5908d027ain5908 diodes+6zener diode izsmin5908 oniin5908transient absorption zeneriin5907zener diode 8.5 v 5w
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in5297
Abstract: IN5314 SILICON DICE motorola
Contextual Info: MOTOROLA SC ~34 {DIODES/OPTOï 6367255 MOTOROLA SC DËlfc.Bb7H55 OQBñiaT ñ D IO D E S /O P TO 34C 38129 D 7Z/)~0S SILICON ZENER DIODE DICE (continued) 1C5297 DIE NO. — SERIES LINE SOURCE — DZD510 CURRENT REGULATOR DIODE This die provides performance equal to or better than that
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bb7h55dzd5101c5297in5297+3in53141c5314silicon dice motorola
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Zener Diode 4148
Abstract: zener T 4148 T 4148 zener ZENER diode t 4148 ZENER 4148 1N914 SOT-23 v 4148 zener diode diode t 4148 zener diode 4148 code diode 4148 sot-23
Contextual Info: 02 &J 02E 00432 1989963 CENTRAL SEMICONDUCTOR 0Q00435 pe| 7 | T -2 3 ~ 0 $ - SMD WÊÈÊSSÊÊiÊÊÈâm eentsvsi ssmieonsBwefior sepp. Centres! gs^ ieoiï^ yetai”e@rp. Sx •‘¿¿ri6 SURFACE MOUNTED DEVICES DIODE: SOT-23, SOT-143, S0D-80 ZENER DIODE: SOT-23, S0D-80
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ot-23ot-143s0d-80ot-89+11bas28zener diode 4148zener t 4148t 4148 zenerzener diode t 4148zener 41481n914 sot-23v 4148 zener diodediode t 4148zener diode 4148 codediode 4148 sot-23
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74LS115
Abstract: 74LS273 74LS189 equivalent 74LS00 QUAD 2-INPUT NAND GATE 74LS265 fan-in and fan out of 7486 74LS93A 74LS181 74LS247 replacement MR 31 relay
Contextual Info: F A IR C H IL D LOW POWER S C H O T T K Y D A TA BOOK ERRATA SHEET 1977 Device Page Item Schematic 2-5 Figure 2-6. Blocking diode in upper right is reversed. Also, diode con necting first darlington emitter to output should have series resistor. LS33 5-25
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74ls11574ls27374ls189 equivalent74ls00 quad 2-input nand gate+674ls265fan-in and fan out of 748674ls93a74ls18174ls247 replacementmr 31 relay
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IN5844 diode
Abstract: IN5844 IN751 Diode "IN5844" IN4742 diode in5844 IN4744 IN4732 IN4748 IN4118
Contextual Info: jemitronicf discrete devices SEMICONDUCTORS S em itronics Corp. ZENER DIODE CROSS REFERENCE GUIDE BY VOLTAGE vz 500mW 4Q0mW 400mW 500mW 250mW 250/ 400mW IN4678 IN4679 IN4680 IN4614 IN4615 IN4616 IN5985 IN4681 IN4617 IN5966 IN4682 IN4683 IN4616 IN4619 500mW
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in5221in5222in5223in5224+16in5225in5226in5227in5228in5229in5230in5844 diodein5844in751diode "in5844in4742diode in5844in4744in4732in4748in4118
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ANA 618
Abstract: IC ANA 618 IN4453 Lem LT 300 - t
Contextual Info: IN4156, IN4157, IN4453, IN4829, IN4830, IN5179 STABISTORS Mierosemi Corp. ' The diode experts SANTA ANA , CA Also, Tight Tolerance SCOTTSDALE, AZ MPD100 thru MPD400A or MZ2360 and MZ2361 For more inform ation call: 602 941-6300 PACKAGE DIMENSIONS APPLICATION
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in4156in4157in4453in4829+9in4830in5179mpd100mpd400amz2360mz2361ana 618ic ana 618lem lt 300 - t
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IN5555
Abstract: in5556 transient absorption zener IN5557 IN5558 zener diode Izsm IIN5555 ZENER DIODE 437 IN555
Contextual Info: POWERZORB IN5555 -IIN5558 1.5 KW Transient Absorption Zener Diode A range of Transient Absorption zener diodes specifically designed to meet high reliability requirements in the aviation industry. 1.5KW; 1mS expo surge _ _ 1 W max cont 3 0 .3 -175V
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in5555-iin555810-12s127mm+9-in5558in5556transient absorption zenerin5557in5558zener diode izsmiin5555zener diode 437in555
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IN5221
Contextual Info: Zener Diode Chip Series CD5221B thru CD5272B Features • All junctions completely protected with silicon dioxide • Electrically equvalent to IN5221B thru IN5272B • 0.5 Watt capability with proper heat sinking • Compatible with all wire bonding and die attach
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cd5221bcd5272bin5221bin5272b+3200ma20entativein5221
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CD5226B
Abstract: IN5221B IN5221 IN5272B CD522
Contextual Info: Zener Diode Chip Series CD5221B thru CD5272B Features • All junctions completely protected with silicon dioxide • Electrically equvalent to IN5221B thru IN5272B • 0.5 Watt capability with proper heat sinking • Compatible with all wire bonding and die attach
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cd5221bcd5272bin5221bin5272b+4200macd5226bin5221cd522
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TAG 9135
Abstract: tag z 409 rohm 4.7V zener diode MARKING CODE t05 SOT-23 SMD CODE L01 rsz rohm marking RSZ diode rsz RSZ5000 ROHM marking 185
Contextual Info: TfliSÛR'H O O O ö T O b ROHffl PRELIMINARY RHU RSZ5000 SERIES ZENER DIODE, SURFACE MOUNT: APPLICATION: EDS • SOT-23 FEATURES: Voltage Regulation • Small size for Surface Mount Applications ■ Compatible with JEOEC IN5000 Series ■ Silicon planar construction
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rsz5000ot-23in5000rsz5262b+14rsz5263brsz5264brsz5265brsz5266brsz5267btag 9135tag z 409rohm 4.7v zener diodemarking code t05 sot-23smd code l01rsz rohmmarking rszdiode rszrohm marking 185
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diode t88
Abstract: zener diode 4.7V 1n4000 DIODE t88 diode T-72 diode 1n5000 5261B 5230b 1N4000 1N5000 SERIES
Contextual Info: 7 0 2 0 ^ DOOfifi^O Olô •RHil 1N5000 SERIES ZEN ER DIODE GLASS SEALED APPLICATION: FEATURES: - JE D E C IN5000 Series - Silicon planar construction ■DO-35 Package - Available in 8 mm plastic carrier tape - Voltage range: 2.4 to 91V Voltage Regulation
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1n5000in5000do-355261b+131n5262b5262b1n5263b5263b1n5264bdiode t88zener diode 4.7v1n4000 diodet88 diodet-72 diode5230b1n40001n5000 series
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