DIODE ICTE 18 Search Results

Contextual Info: Part: ICTE-18 Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00 Standoff Polarity

18c zener diode

Abstract: ZENER 18C 2480 zener
Contextual Info: Part: ICTE-18C Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00

diode icte 36

Abstract: ICTE12 ICTE22 ICTE36C c258 thomson transil diode de puissance
Contextual Info: S-THOMSON S IC 59C O T H O M S O N - C S F j C T 02690 E g g . DIVISION SEMICONDUCTEURS. ^ q D 1^ 2^ 537 D — T . QüüatiTG - I l - 2 - 3 | C T E 4 5 ' C ' U N I - A N D BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS DIODES DE PROTECTION U N I - E T BIDIRECTIONNELLES

Contextual Info: World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: 707 996-5201 . . Fax: (707) 996-3380 TVS Diodes - ICTE Low Clamping Specifications - Electrical Characteristics j 10/1000jjs | 10/1000jjs i Maximum I Maximum | Maximum 10/1000jjs Rated j Minimum j Stand By ! Clamping j Clamping jRated Peak

diode 9146

Abstract: diode icte 36 diode icte 18 MPTE-45 MPTE-45C ICTE
Contextual Info: Silicon Avalanche Diodes 1500 Watt Axial Leaded Transient Voltage Suppressors ICTE/MPTE Series The ICTE/MPTE series 1500 W transient suppressors are designed specifically for protection of CMOS, NMOS, BiMOS, and other integrated circuits available today for TTL, DTL, ECL, RTL, and

TVS Transient Voltage Suppressors

Abstract: TVS SOD-123 SA5* sot-23 258 sot MMBZ5221ELT1 MM3Z2V4S
Contextual Info: Table of Contents Page Page Numeric Data Sheet Listing Numeric Data Sheet Listing . . . . . . . . . . . . . . . . . . . . . . . . . 4 Chapter 3: Case Outlines and Package Dimensions Chapter 1: Selector Guide Case Outlines and Package Dimensions . . . . . . . . . . . . 280

IN6277

Abstract: in6275 IN6282 IN6281 diode p6000 j IN6287 In6283 IN6284 in6285 in6276
Contextual Info: TRANSIENT VOLTAGE SUPPRESSORS INTRODUCTION TO TRANSIENT VOLTAGE SUPPRESSORS General Semiconductor delivers “state of the art” Transient Voltage Suppressors TVS . Based on controlled avalanche technology, these voltage clamping devices utilize a specific soft solder construction. This physical design enables these

SP05X

Abstract: za sot23 1.5pke 8K10 UltraMOV SMT50 diode P6KE 15KP
Contextual Info: Introduction to Circuit Protection Transientology ESD Suppressor Selection Guide Littelfuse manufacturers three different surface mount product families for ESD suppression. Each technology provides distinct attributes for compatibility to specific circuit requirements.

diode lt 436

Abstract: ZENER DIODE bzy91
Contextual Info: Table of Contents Introduction to Circuit Protection 1 Varistor Products 2 Surface Mount Varistors 3 PulseGuard Suppressors 4 TVS Diode Arrays 5 Silicon Avalanche Diodes 6 Zeners/Studs 7 Gas Discharge Tubes 8 Resettable PTCs 9 Surface Mount Fuses 10 Axial Lead and Cartridge Fuses

20A Diode axial leads

Abstract: avalanche diode diode 1n60 DIODE 1n56 sl1021b
Contextual Info: Introduction to Circuit Protection Transientology Overvoltage Suppression Facts and Selection Guide Gas Plasma OVP/GDT Selection Guide Family name OMEGA BETA ALPHA DELTA Performance Level Standard High Ultra High Series Name SL1024B SL1024A SL1011A SL1011B

orient 817b

Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
Contextual Info: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

GE Transient Voltage Suppression Manual

Abstract: diode 930 6V8A 2n2646 practical application circuits UJT 2N2646 Transient Voltage Suppression Manual Bidirectional Diode Thyristors 1.5ke 30A Zener Diode SOD323 pdz 4 .7b 919b diode varistor SVC 471 14 melf diode marking code
Contextual Info: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

UJT 2N2646 specification

Abstract: GE Transient Voltage Suppression Manual Triac motor speed control UJT-2N2646 PIN DIAGRAM DETAILS marking dp U1 sot363 UJT pin identification TO-220 MOS UJT 2N2646 DO41 PACKAGE diode marking S6 sine wave UPS inverter circuit diagram
Contextual Info: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have

4614 mosfet

Abstract: MOTOROLA 3055V 3055VL
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD3055VL TM O S V P o w er Field E ffe c t T ran sisto r DPAK fo r S u rfa ce M ount TMOS POWER FET 12 AMPERES 60 VOLTS R DS on = 0-18 OHM N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te c h n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce a rea p ro d u ct a bo u t o n e -h a lf th a t of sta n d a rd M O S FE Ts. This

TP10N10E

Abstract: transistor Ip
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP10N10EL Logic Level TM O S E -FE T ™ P o w er Field E ffe c t Tran sistor M otorola P re fe rre d D evice N-Channel Enhancement-Mode Silicon Gate This a d va n ce d TM O S p o w e r F E T is d e sig n e d to w ith sta n d high

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTP6P20E TM O S E-FET™ P o w er Field E ffe c t T ran sisto r M otorola Preferred Device P-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d T M O S E -F E T is d e s ig n e d to w ith s ta n d h ig h

FRO 24N

Abstract: 24n40e 24n40
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S h ee t M TW 24N 40E TMOS E-FET ™ Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole M otorola Preferred Device TMOS POWER FET 24 AMPERES 400 VOLTS RDS on = 0.16 OHM N-Channel Enhancement-Mode Silicon Gate

33N10E

Abstract: TP33N10E
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data Sheet MTP33N10E TM O S E -F E T ™ P o w er Field E ffe c t T ran sisto r Motorola Preferred Devlc« N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 33 AMPERES 100 VOLTS T h is a d v a n c e d T M O S E -F E T is d e s ig n e d to w ith s ta n d high

TY25N60E

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTY25N60E TM O S E -F E T ™ P o w er Field E ffe c t T ran sisto r M o to ro la P re fe rre d D e v ic e N-Channel Enhancement-Mode Silicon Gate This a d va n ce d T M O S p o w e r F E T is d e sig n e d to w ith sta n d high

20N03

Abstract: 20n03h
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTD20N03HDL HDTM O S E -FE T High D en sity P o w er FET DPAK fo r S u rfa c e M ount M o to ro la P re fe rre d D e v ic e TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS R DS on = 0-035 OHM

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A dvance Information M TD F 1N 02H D Medium Power Surface Mount Products TM O S Dual N -C h an n e l F ield E ffe c t Tran sisto r M o to ro la P re fe rre d D e vice SINGLE TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS R D S on = 0.120 OHM

14N50E

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTW14N50E TMOS E-FET ™ Power Field Effect Transistor TO -247 with Isolated Mounting Hole M o to ro la P re fe rre d D e v ic e TM O S PO W ER FET 14 A M P E R E S 5 0 0 VO LTS N-Channel Enhancement-Mode Silicon Gate

20N20E

Abstract: B20N20E motorola 20n mosfet 20n
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s Data Sheet MTB20N20E TM O S E -F E T ™ High Energy P o w er FET D2PAK fo r S u rfa c e M ount M otorola Preferred Device TM O S POW ER FET N-Channel Enhancement-Mode Silicon Gate V The D ^P A K p a cka g e has th e c a p a b ility of h ou sin g a larg e r die

3N120E

Abstract: B3N120E MTB3N120E
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S h ee t M TB3N 120E TM O S E -FE T ™ High E nergy P o w er FET D2PAK for S u rfa c e M ount M o to ro la P re fe rre d D evice TM O S PO W ER FET N-Channel Enhancement-Mode Silicon Gate