DIODE GA 105 Search Results
DIODE GA 105 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
CUZ12V |
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Zener Diode, 12 V, USC | Datasheet | ||
MUZ5V6 |
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Zener Diode, 5.6 V, USM | Datasheet |
DIODE GA 105 Datasheets Context Search
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Contextual Info: HARRIS SEMICOND SECTOR 37E î> 430E271 00 57 1 3 6 4 Optoelectronic Sp e c ific a tio n s_ IHAS T-m-33 Photon Coupled Isolator 4N35,4N36,4N37 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State 4N35-4N36-4N37 are gallium arsenide |
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430E271 T-m-33 4N35-4N36-4N37 E51868 S-42662 92CS-429S1 | |
Contextual Info: 3875081 G E SO LID 01E STATE 1 9 8 10 D Optoelectronic Specifications_ HARRIS SEMICOND SECTOR 37E D H 4302271 0G27272 A E l HAS Photon Coupled Isolator H24B1-H24B2 Ga As Infrared Em itting Diode & NPN Silicon Photo-Darlington Amplifier The GE Solid State H24B series consists of a gallium arsenide |
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0G27272 H24B1-H24B2 E51868 S-42662 92CS-429S1 | |
diode 6t6
Abstract: H24B1 H24B2
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H24B1-H24B2 E51868 00pps diode 6t6 H24B1 H24B2 | |
PJ2301Contextual Info: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@-4.5V,ID@-2.2A=105mΩ 0.120(3.04) • Advanced Trench Process Technology 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters |
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PJ2301 2002/95/EC OT-23 MIL-STD-750 2011-REV PJ2301 | |
PJ2301Contextual Info: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@-4.5V,ID@-2.2A=105mΩ 0.120(3.04) • Advanced Trench Process Technology 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters |
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PJ2301 2002/95/EC OT-23 MIL-STD-750 2011-REV PJ2301 | |
PJ230Contextual Info: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@-4.5V,ID@-2.2A=105mΩ 0.120(3.04) • Advanced Trench Process Technology 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters |
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PJ2301 DVH6273DFNDJH 2011-REV RB500V-40 PJ230 | |
PJ2301Contextual Info: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@-1.8V,ID@-1.5A=200mΩ • RDS(ON), VGS@-4.5V,ID@-2.2A=105mΩ • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters |
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PJ2301 DVH6273DFNDJH 2011-REV PJ2301 | |
IGBT SKM 400 GA 122D SEMIKRON
Abstract: Si 122D semikron IGBT 150A 600v GA122 102D 122D V00E
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13bb71 0DD37G1 T-39-31 SKM200 IGBT SKM 400 GA 122D SEMIKRON Si 122D semikron IGBT 150A 600v GA122 102D 122D V00E | |
BSM200GA170DLCContextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GA 170 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom |
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BSM200GA170DLC BSM200GA170DLC | |
BSM200GA170DLCContextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GA 170 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom |
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Contextual Info: s e MIKROn Absolute Maximum Ratings Symbol C onditions V a lu e s Units 1 AC, 1 min. DIN 40 040 DIN tEC 68 T.1 1200 1200 400 / 300 800 / 600 ±20 2500 - 4 0 . . .+150 125 2 500 ?) Class F 55/150/56 Inverse Diode I f = - lc Tease — 25/80 ! C Tease 25/80 :!Cj tp —1 nts |
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BSM200GA170DLC
Abstract: diode 2300A diode bzw 06 26
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diode bym
Abstract: DIODE ga 105 C67076-A2508-A67 A2706 a2708 GAL 700 a2108 a2702 a2902 C67076-A2515-A67
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E3224 E3226 E3166 C67070-A2300-A70 C67076-A2010-A70 C67076-A2011-A70 C67076-A2012-A70 C67076-A2013-A70 diode bym DIODE ga 105 C67076-A2508-A67 A2706 a2708 GAL 700 a2108 a2702 a2902 C67076-A2515-A67 | |
BSM200GA170DLCContextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GA 170 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom |
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Contextual Info: seMIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM V ges Ptot Tj, Tstg Vsol humidity climate Values Conditions ' R ge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp Units = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1700 |
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case059 | |
skm 152 ga 123
Abstract: semikron skm 152 ga 123 SKM 75 GAL 123 IGBT skm 50 gb 101 d skm 152 ga SKM 200 GB 102 D semikron skm 152 ga skm 50 gb 100 d skm 100 gb 101 d skm 22 gal 123
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SKM 300 CIRCUIT
Abstract: SKM 300 GA 102 D
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Contextual Info: 51E D Ô13bb71 DDD371Ô M7T se MIKRDN SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Ptot Tj, Tslg Visol hum idity climate C onditions 1 • SEK G Values . 102 D 122 D 1000 I 1200 1000 1 1200 400/300 800/600 ±20 2500 - 5 5 . . .+150 |
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13bb71 DDD371Ã 013bb71 G037E5 | |
OPB105Contextual Info: OPTEK TECHNOLOGY INC ObE D | bT'iôSÛO QOQQB^b 1 | u p iM io c ir o n ic i u iv is io r T R W Electronic Components Group m R ' wV Product Bulletin 5363 January 198S Photologic Slotted Optical Switches Type O PB 1050 0 Series OPB1Û51X Type H O U X O D O T M O K A T E S A NO D E |
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skm 152 ga 123
Abstract: semikron skm 152 ga 123 semikron skm 152 ga skm 200 IGBT 600V 200A skm 22 gal 123 SKM 200 GB 102 D SKM 300 CIRCUIT 1502C M200G812 CASED56
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123D1 skm 152 ga 123 semikron skm 152 ga 123 semikron skm 152 ga skm 200 IGBT 600V 200A skm 22 gal 123 SKM 200 GB 102 D SKM 300 CIRCUIT 1502C M200G812 CASED56 | |
SKM300GA12e4Contextual Info: SKM300GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 353 A |
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SKM300GA12E4 SKM300GA12e4 | |
Contextual Info: SKM300GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 353 A |
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SKM300GA12E4 CAL009 | |
Contextual Info: www.eLED.com T-1 3mm SOLID STATE LAMP Package Dimensions E34HD BRIGHT RED E34ID HIGH EFFICIENCY RED E34GD GREEN E34YD YELLOW E34AD YELLOW Features 1.HIGH INTENSITY. 2.LOW POWER CONSUMPTION. 3.POPULAR T-1 DIAMETER PACKAGE. 4.GENERAL PURPOSE LEADS. Notes: |
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E34HD E34ID E34GD E34YD E34AD EA0004 AUG/24/2001 E34-2/3 | |
Contextual Info: SKM300GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
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SKM300GA12E4 |