DIODE GA 105 Search Results

PJ2301

Contextual Info: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@-1.8V,ID@-1.5A=200mΩ • RDS(ON), VGS@-4.5V,ID@-2.2A=105mΩ • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters

BSM200GA170DLC

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GA 170 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

sy 320 diode

Abstract: sg 4001 diode GER-A sy 360 KT802A KY transistor diode sy 104 KT 315 a KT 802 mitteilung aus dem veb rft
Contextual Info: S E R V I C E - M I T T E I LU HClüN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN { p is i! ! r a d i o -televisioni | JANUAR 1982 4 1 SEITE 1-4 Mitteilung aus dem VEB Fernsehgerätewerke "Friedr. Engels" Staßfurt Farbreinheitsstörungen bei In-line-Bildröhren

SKM 300 CIRCUIT

Abstract: SKM 300 GA 102 D
Contextual Info: Absolute Maximum Ratings Symbol Values Conditions 1 Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 400 / 300 800 / 600 ± 20 2500 – 40 . . .+150 125) 2 500 7) Class F 55/150/56 V V A A V W °C V Inverse Diode IF= – IC Tcase = 25/80 °C IFM= – ICM Tcase = 25/80 °C; tp = 1 ms

Contextual Info: 51E D Ô13bb71 DDD371Ô M7T se MIKRDN SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Ptot Tj, Tslg Visol hum idity climate C onditions 1 • SEK G Values . 102 D 122 D 1000 I 1200 1000 1 1200 400/300 800/600 ±20 2500 - 5 5 . . .+150

OPB105

Contextual Info: OPTEK TECHNOLOGY INC ObE D | bT'iôSÛO QOQQB^b 1 | u p iM io c ir o n ic i u iv is io r T R W Electronic Components Group m R ' wV Product Bulletin 5363 January 198S Photologic Slotted Optical Switches Type O PB 1050 0 Series OPB1Û51X Type H O U X O D O T M O K A T E S A NO D E

skm 152 ga 123

Abstract: semikron skm 152 ga 123 semikron skm 152 ga skm 200 IGBT 600V 200A skm 22 gal 123 SKM 200 GB 102 D SKM 300 CIRCUIT 1502C M200G812 CASED56
Contextual Info: s e M IKRO n Absolute Maximum Ratings Symbol VcES VcGR lc ICM Rge = 20 k£2 Tcase = 2 5 /8 0 °C Tcase = 2 5 /8 0 °C; tp = 1 ms per IG BT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 6 8 T.1 Inverse Diode Tcase = 2 5 /8 0 °C If= - lc Tcase = 2 5 /8 0 C . tp = 1 ms

Contextual Info: SKM300GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 353 A

Contextual Info: SKM300GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C

Contextual Info: SKM300GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 4 IGBT4 Modules SKM300GA12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V

Contextual Info: SKM300GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 4 IGBT4 Modules SKM300GA12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V

transistor BD 512

Abstract: transistor kt 801 transistor kt Diode KD 202 junost 603 kt801b GT 404 GT313B MP 41 transistor MP42A
Contextual Info: Mau« Import - Geräte Bewdetisoher s/w-gernsehkofferempfänKor " J ü M 0 S T 603 Hit dam Import dos linksseitig skizzier­ ten Fernsehportable aus dsr Sowjetunion vird die s.Z. in dieser Geräteklasse be­ stehende liarktlüoke geschlossen. Das Gerät ist für den Bmpfang aller Fern­

Contextual Info: TIP100/101/102 TIP105/106/107 SGS-THOMSON POWER DARLINGTONS DESCRIPTIO N The TIP100, TIP101 and TIP102 are silicon epi­ taxial-base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package, intended for use in power linear and swit­

A472 G

Contextual Info: Æ n tro n PRODUCT DEVICES.INC. A B S O L U T E MAXIMUM R A T I N G S PARAMETER 1000V, UNI TS SYMBOL D r a i n - S o u r c e Vo 1t . 1 D rain-G at e Voltage ( R GS =1.0M n ) (1) Gate-Source Voltage C o n t i n uou s D rain C urren t Continuous ( T c = 25° C )

SMA905

Abstract: LDD100-3 ntc pt100 limo FB laser LDD100 SMA905 connector SMA905 CONNECTOR DRAWING diode e 2060 1025-1080nm DIODE 809
Contextual Info: LIMO FB Series pump HIGH-POWER DIODE LASER • • • • • • • Optical data High brightness laser for, pump applications SMA905 Plug & Play connector for optical fibres Compact dimensions Passively cooled Dual temperature sensor (NTC/PT100) Optional monitor diode

Actel a1280

Abstract: A1225 A1225A A1240 A1240A A1240A-2 A1280 A1280A actel a1280a unused pin actel a1240
Contextual Info: v4.0.1 ACT 2 Family FPGAs Fe a t ur es • Datapath Performance at 105 MHz • Up to 8000 Gate Array Gates 20,000 PLD equivalent gates • 16-Bit Accumulator Performance to 39 MHz • Replaces up to 200 TTL Packages • Replaces up to eighty 20-Pin PAL

water cooled Chiller

Abstract: SMA905 SMA905 connector LEMO 2 Wavelength Laser Diode 940-975 laser diode 635 nm laser diode lifetime Laser Head PT100 temperature sensor water
Contextual Info: LIMO AV5 Series pump HIGH-POWER DIODE LASER • • • • • Optical data High brightness laser for pump applications Hermetically sealed laser head in potential-free housing SMA905 / LD80 Plug & Play connector for optical fibres Compact dimensions Dual temperature sensor (NTC/PT100)

water cooled Chiller

Abstract: SMA905 LDD60-5 2 Wavelength Laser Diode ga 39 diode LEMO PT100 temperature sensor water SMA905 connector LIMO80-F400-DL976-T2C1M0P0F36 PT100 application note
Contextual Info: LIMO FP Series pump HIGH-POWER DIODE LASER • • • • • Optical data High brightness laser for pump applications Hermetically sealed laser head in potential-free housing SMA905 Plug & Play connector for optical fibres Compact dimensions Dual temperature sensor (NTC/PT100)

Contextual Info: PRODUCT Æ lttran CÂTÂl ' N-CHANNEL ENHANCEMENT MOS FET 1000V. 9A, 1.4 n S D F 9 N 100 JEA S D F 9 N 100 JEB S D F 9 N 100 JEC 5DF9N100 JED FEATURES • RUGGED PACKAGE HI-REL CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS

Contextual Info: PRODUCT CATÂLO' Æ lltron N -CHANNEL ENHANCEMENT MOS FET 500V, 24A, 0.25 Q SDF24N50 FEATURES • • • • • • • • GAF RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE

Contextual Info: CÄTÄLQO_ Æ\\tTOTÎ nF„ rFS.,«. PRODUCT N-CHANNEL ENHANCEMENT MOS FET 600V, 15A, 0.50n SDF15N60 GAF FEATURES • RUGGED PACKAGE • HI-REL CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS • L O W IR LOSSES

Contextual Info: FR0OUOT ÂTÂIO' N-CHANNEL ENHANCEMENT MOS FET 600V, 20A, 0.35G SDF20N60 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE

SERVICE-MITTEILUNGEN

Abstract: GAY60 OA625 OA645 rft lautsprecher servicemitteilungen Dioden GA 100 RFT Dioden OA665 RFT Plattenspieler
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N Mi E-Ê111 1r a d i o AUSGABE: -television | DATUM: 11/73 Sept. 1973 A U S S T E L L U N G /z fa M Rationalisierungsmittel im RFT - Service AM 2 1 . SEPT. 1973

F 2452 mosfet

Contextual Info: 1-2-1 2-Phase Stepper Motor Unipolar Driver ICs SLA7050M/SLA7051M/SLA7052M 2-Phase/1-2 Phase Excitation, Built-in Sequencer •Absolute Maximum Ratings Ta=25°C Ratings Symbol Parameter SLA7050M SLA7051M Unit SLA7052M Motor Supply Voltage VM 46 V Load Supply Voltage