DIODE G7 Search Results
DIODE G7 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 |
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Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 |
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Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 |
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Zener Diode, 5.6 V, ESC | Datasheet |
DIODE G7 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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FMB-24MContextual Info: SANKEN ELECTRIC COMPANY, LTD. SPECIFICATIONS DEVICE TYPE NAME SANKEN SILICON SCHOTTKY BARRIER DIODE FMB-24M 1. Scope 2. General The present specifications shall apply to Sanken silicon diode, FMB-24M. 2.1 Type Silicon Schottky Barrier Diode 2.2 Structure Resin Molded |
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FMB-24M FMB-24M. UL94V-0 September/28/ SSA-03414 FMB-24M | |
CL67
Abstract: 32MHz quartz RESONATOR 550KQ
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250mA 500/iA CL67 32MHz quartz RESONATOR 550KQ | |
amd FX PIN LAYOUT
Abstract: G701
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200kHz 250mA amd FX PIN LAYOUT G701 | |
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Contextual Info: iC-VJ, iC-VJZ LASER DIODE CONTROLLER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Transmitter for laser light barriers from 1 to 200kHz ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ◊ ◊ Laser diode driver of up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode |
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200kHz 250mA | |
diode 107 10K 501
Abstract: G103 G003 G101 G102 32MHz quartz RESONATOR amd IC amplifier G701 11nQ
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200kHz 250mA exter9-6135-9292-0 diode 107 10K 501 G103 G003 G101 G102 32MHz quartz RESONATOR amd IC amplifier G701 11nQ | |
72P1
Abstract: A4015
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bM57S2S NDL5772P NDL5772P NDL5060 NDL5061 NDL5762P NDL5764P) NDL5070 NDL5071 72P1 A4015 | |
UPS APC 800 CIRCUIT
Abstract: APC UPS CIRCUIT BOARD collimated LED 670 nm Laser Diode 808 2 pin 1000 mw APC back UPS RS 800 UPS APC CIRCUIT 1550nm 5mw laser diode APC UPS repair temperature controlled fan project Fabry-Perot-Laser-Diode 1310 1550
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DIODE G7
Abstract: BAV99LT1 G7 diode
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BAV99LT1 236AB) DIODE G7 BAV99LT1 G7 diode | |
SMBJ130CAContextual Info: P6 SMBJ 6.5.P6 SMBJ 130CA power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter , @ 5 ; . Absolute Maximum Ratings Symbol Conditions Surface mount diode Unidirectional and bidirectional Transient |
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130CA 130CA SMBJ130CA | |
037570 DIODEContextual Info: bEE D m bl4275E5 OOaTSb'] SÛT HNECE N E C ELECTRONICS INC LASER DIODE / N D L5650D 1 5 5 0 nm OPTICAL FIBER C O M M U N IC A T IO N S InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE DE SC RIPTIO N N D L 5 6 5 0 D is a 1 550 nm DFB D istrib u te d Feed-back laser diode c hip on carrier w ith rib b o n lead. |
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bl4275E5 L5650D 037570 DIODE | |
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Contextual Info: VRM = 600 V, IF AV = 60 A, trr = 100 ns(max.) Fast Recovery and High Power Diode CTNS-4606S Features Package The CTNS-4606S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 600 V. Typical forward voltage drop of 1.15 |
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CTNS-4606S CTNS-4606S CTNS-4606S-DS | |
atmel 904
Abstract: atmel 1030 AC100 T2525 ATMEL 1047 T2525/ATA2526
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T2525 T2525 4657C atmel 904 atmel 1030 AC100 ATMEL 1047 T2525/ATA2526 | |
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Contextual Info: Features • • • • • • No External Components Except PIN Diode Supply-voltage Range: 4.5 V to 5.5 V Automatic Sensitivity Adaptation AGC Automatic Strong Signal Adaptation (ATC) Enhanced Immunity Against Ambient Light Disturbances Available for Carrier Frequencies between 30 kHz to 76 kHz; Adjusted by Zener Diode |
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T2525 T2525 4657D | |
XA4202Contextual Info: VRM = 200 V, IF AV = 20 A, trr = 25 ns(max.) Fast Recovery and High Power Diode CTXA-4202S Features Package The CTXA-4202S is a fast recovery diode which realize a peak reverse voltage of 200 V, a typical forward voltage drop of 0.90 V and typical trr of 18 ns |
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CTXA-4202S CTXA-4202S CTXA-4202S-DS XA4202 | |
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Contextual Info: VRM = 600 V, IF AV = 30 A, trr = 50 ns(max.) Fast Recovery and High Power Diode Preliminary CTNS-6306S Features Package The CTNS-6306S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 600 V. Typical forward voltage drop of 1.15 |
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CTNS-6306S CTNS-6306S O-247-3L CTNS-6306S-DS | |
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Contextual Info: VRM = 600 V, IF AV = 60 A, trr = 35 ns(max.) Fast Recovery and High Power Diode CTXS-6606S Preliminary Features Package The CTXS-6606S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 600 V. Typical forward voltage drop of 1.45 |
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CTXS-6606S CTXS-6606S O-247-3L CTXS-6606S-DS | |
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Contextual Info: VRM = 600 V, IF AV = 60 A, trr = 100 ns(max.) Fast Recovery and High Power Diode CTNS-6606S Preliminary Features Package The CTNS-6606S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 600 V. Typical forward voltage drop of 1.15 |
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CTNS-6606S CTNS-6606S O-247-3L CTNS-6606S-DS | |
LDA-56Contextual Info: LDA-56 v 1.0 12.08.2013 Description LDA-56 is a complete laser diode assembly, suitable for standard 5.6mm TO-Can laser diodes. It features focusable acryl collimating lens and laser diode mounting flange with threaded latching. Made from black burnished brass, and tooled on high precision CNC machinery, LDA56 offers excellent dimensional accuracy and axial alignment. |
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LDA-56 LDA-56 LDA56 | |
T41GContextual Info: OSHIBA < LASER/FBR OPTIC 01 t • 10172S2 DOlbDIS 7 ■ TOSb O T-41-G7 TOSHIBA LASER DIODE TOLD 370 Features • Wavelength 1,55/im • Simple Coaxial Package • Suitable for Local Subscriber Networks • Single-mode Fiber Pigtail 10/125/tm) • Hermetically Sealed |
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10172S2 T-41-G7 55/im 10/125/tm) T-41-50 1000o 50/125pm) T41G | |
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Contextual Info: VVZB 120 VRRM = 1200/1600 V IdAV = 120 A Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary data VRRM O1 S1 Type M1 I1 E1 V 1200 1600 VVZB 120-12 io2 VVZB 120-16 io2 W1 L7 G7 C7 O10 IdAV IFRMS/ITRMS |
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20090618a | |
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Contextual Info: G788 Global Mixed-mode Technology ±1°C Remote and Local Temperature Sensor with SMBus Serial Interface Features General Description The G788 is a precise digital thermometer that reports the temperature of both a remote sensor and its own package. The remote sensor is a diode-connected transistor typically a low-cost, easily mounted 2N3904 NPN |
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G788-1 G788P81U 2N3904 2200pF | |
G7 diode
Abstract: DIODE G7
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Contextual Info: SKB 2 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik !"53 !""3 !!"35 4 " ! && 7&& A&& ! ;& %)+ )+& 2 |
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Contextual Info: P6 SMBJ 150.P6 SMBJ 180CA ,* @ 5 ; . Absolute Maximum Ratings Symbol Conditions Surface mount diode Unidirectional and bidirectional Transient Voltage Suppressor diodes Values Units : 5 : 2 * G7: 25 G7: - . |
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180CA | |