DIODE G7 Search Results

FMB-24M

Contextual Info: SANKEN ELECTRIC COMPANY, LTD. SPECIFICATIONS DEVICE TYPE NAME SANKEN SILICON SCHOTTKY BARRIER DIODE FMB-24M 1. Scope 2. General The present specifications shall apply to Sanken silicon diode, FMB-24M. 2.1 Type Silicon Schottky Barrier Diode 2.2 Structure Resin Molded

CL67

Abstract: 32MHz quartz RESONATOR 550KQ
Contextual Info: iC-VJ, iC-VJZ •Haus LASER DIODE CONTROLLER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Laser diode driver up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode Laser-current monitor with current or voltage output

amd FX PIN LAYOUT

Abstract: G701
Contextual Info: iC-VJ, iC-VJZ if f if ll LASER DIODE CONTROLLER f e a ^ u ;b Ë ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 3 |^ Laser diode driver of up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode

Contextual Info: iC-VJ, iC-VJZ LASER DIODE CONTROLLER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Transmitter for laser light barriers from 1 to 200kHz ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ◊ ◊ Laser diode driver of up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode

diode 107 10K 501

Abstract: G103 G003 G101 G102 32MHz quartz RESONATOR amd IC amplifier G701 11nQ
Contextual Info: iC-VJ, iC-VJZ LASER DIODE CONTROLLER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Transmitter for laser light barriers from 1 to 200kHz ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ◊ ◊ Laser diode driver of up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode

72P1

Abstract: A4015
Contextual Info: N E C ELECTRONICS INC b2E J> m bM57S2S □D37cicib 131 « N E C E DATA SHEET N E C LASER DIODE MODULE ELECTRON DEVICE Q ^ | - y 72P 1 5 5 0 nm OPTICAL FIBER COMM UNICATIONS InGaAsP DC-PBH PULSED LASER DIODE MODULE DESCRIPTION NDL5772P is a 1 550 nm pulsed laser diode DIP module with singlemode fiber and internal thermo-electric cooler. It is

IFS100B12N3E4

Contextual Info: Technische Information / technical information IFS100B12N3E4_B39 IGBT-Module IGBT-modules MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current

FP75R06KE3

Contextual Info: Technische Information / technical information FP75R06KE3 IGBT-Module IGBT-modules EconoPIM 3 Modul mit Trench/Feldstop IGBT³ und EmCon3 Diode EconoPIM™3 module with the trench/fieldstop IGBT³ and EmCon3 diode IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data

forward reverse schematic diagram

Abstract: MSB15A45S solar schematic
Contextual Info: MSB15A45S Bypass Diode Module for Solar-cell Reverse Voltage 45V Forward Current 15A Schottky Barrier Diode Type Features ◆ Metal-Semiconductor ◆ Low Forward Voltage Drop ◆Compact ◆ Package ◆ outline design Excellent anti-humidity ◆ High internal schematic diagram

UPS APC 800 CIRCUIT

Abstract: APC UPS CIRCUIT BOARD collimated LED 670 nm Laser Diode 808 2 pin 1000 mw APC back UPS RS 800 UPS APC CIRCUIT 1550nm 5mw laser diode APC UPS repair temperature controlled fan project Fabry-Perot-Laser-Diode 1310 1550
Contextual Info: Laser Diode Products for the OEM  INTRODUCTORY INFORMATiON Who we are & what we do Thank you for your interest in Power Who we are Technology, Inc. The past three decades k Manufacturer of OEM laser diode products for analytical, biomedical, & industrial applications

Contextual Info: For partial switching PFC Integrated IGBT and Diode Bridge Rectifier SLA5222 Features Package  SLA5222 incorporates IGBT and diodes for bridge rectifier of partial switching PFC, and achieves board space reduction.  Low Saturation Voltage IGBT  Low VF Diode Bridge Rectifier

Contextual Info: Dual Series Switching Diode BAV99LT1 3 2 CATHODE 1 ANODE 3 CAHODE/ANODE 1 2 DEVICE MARKING CASE 318–08, STYLE 11 BAV99LT1 = A7 SOT–23 TO–236AB MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage

samsung r540

Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP

DIODE G7

Abstract: BAV99LT1 G7 diode
Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode BAV99LT1 3 2 CATHODE 1 ANODE 3 CAHODE/ANODE 1 2 DEVICE MARKING CASE 318–08, STYLE 11 BAV99LT1 = A7 SOT–23 TO–236AB MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current

Contextual Info: P6 SMBJ 150.P6 SMBJ 180CA power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter , @ 5 ;   .   Absolute Maximum Ratings Symbol Conditions Surface mount diode Unidirectional and bidirectional Transient

SMBJ130CA

Contextual Info: P6 SMBJ 6.5.P6 SMBJ 130CA power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter , @ 5 ;   .   Absolute Maximum Ratings Symbol Conditions Surface mount diode Unidirectional and bidirectional Transient

atmel 906

Abstract: Atmel 652 T2527 IN783 4600B
Contextual Info: Features • No External Components Except PIN Diode • Supply-voltage Range: 2.7 V to 3.6 V • Available for Carrier Frequencies in the Range of 30 kHz to 56 kHz; • • • • • • • Adjusted by Zener-diode Fusing Enhanced Bandpass Filter Accuracy of ±1.25%

037570 DIODE

Contextual Info: bEE D m bl4275E5 OOaTSb'] SÛT HNECE N E C ELECTRONICS INC LASER DIODE / N D L5650D 1 5 5 0 nm OPTICAL FIBER C O M M U N IC A T IO N S InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE DE SC RIPTIO N N D L 5 6 5 0 D is a 1 550 nm DFB D istrib u te d Feed-back laser diode c hip on carrier w ith rib b o n lead.

Contextual Info: VRM = 200 V, IF AV = 45 A, trr = 35 ns(max.) Fast Recovery and High Power Diode CTXS-4452S Features Package The CTXS-4452S is a high current and fast recovery diode which realize a peak reverse voltage of 200V, a typical forward voltage drop of 0.92V and typical

Contextual Info: VRM = 600 V, IF AV = 60 A, trr = 100 ns(max.) Fast Recovery and High Power Diode CTNS-4606S Features Package The CTNS-4606S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 600 V. Typical forward voltage drop of 1.15

NS6603

Contextual Info: VRM = 300 V, IF AV = 60 A, trr = 100 ns(max.) Fast Recovery and High Power Diode CTNS-6603S Features Package The CTNS-6603S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 300 V. Typical forward voltage drop of 0.95

Contextual Info: VRM = 300 V, IF AV = 60 A, trr = 50 ns(max.) Fast Recovery and High Power Diode CTXS-6603S Features Package The CTXS-6603S is a high power and fast recovery diode which realize a peak reverse voltage of 300 V, a typical forward voltage drop of 1.05 V and typical

atmel 904

Contextual Info: Features • • • • • • No External Components Except PIN Diode Supply-voltage Range: 4.5 V to 5.5 V Automatic Sensitivity Adaptation AGC Automatic Strong Signal Adaptation (ATC) Enhanced Immunity Against Ambient Light Disturbances Available for Carrier Frequencies between 30 kHz to 76 kHz; Adjusted by Zener Diode

atmel 904

Abstract: atmel 1030 AC100 T2525 ATMEL 1047 T2525/ATA2526
Contextual Info: Features • • • • • • No External Components Except PIN Diode Supply-voltage Range: 4.5 V to 5.5 V Automatic Sensitivity Adaptation AGC Automatic Strong Signal Adaptation (ATC) Enhanced Immunity Against Ambient Light Disturbances Available for Carrier Frequencies between 30 kHz to 76 kHz; Adjusted by Zener Diode