DIODE G7 Search Results

diode 107 10K 501

Abstract: G103 G003 G101 G102 32MHz quartz RESONATOR amd IC amplifier G701 11nQ
Contextual Info: iC-VJ, iC-VJZ LASER DIODE CONTROLLER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Transmitter for laser light barriers from 1 to 200kHz ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ◊ ◊ Laser diode driver of up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode

T41G

Contextual Info: OSHIBA < LASER/FBR OPTIC 01 t • 10172S2 DOlbDIS 7 ■ TOSb O T-41-G7 TOSHIBA LASER DIODE TOLD 370 Features • Wavelength 1,55/im • Simple Coaxial Package • Suitable for Local Subscriber Networks • Single-mode Fiber Pigtail 10/125/tm) • Hermetically Sealed

Contextual Info: HGT1S7N60B3DS Data Sheet 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGT1S7N60B3DS is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input

T7026

Abstract: QFN20 T7026-PGP T7026-PGQ T7026-PGS
Contextual Info: Features • • • • • • • • Single 3-V Supply Voltage High-power-added Efficient Power Amplifier Pout Typically 28 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode

Contextual Info: SK50MLI065 $ - ./ 01        Absolute Maximum Ratings Symbol Conditions IGBT 234 $5 - ./ 0 % $5 - 9./ 0 %<+ IGBT Module SK50MLI065  788 2 /: $ - ;8 0 :8 ( 9.8 ( = .8 2 $5 - 9./ 0 98 B $ - ./ 0 >7 ( $ - ;8 0 .: ( %<+- .  %

g7N60C3D

Abstract: G7N60 G7N60C3 TA49115 TA49121 G7N60c hyperfast diode reference guide HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A
Contextual Info: HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and

snubber resistance of IGBT

Abstract: CM50RL-24NF
Contextual Info: MITSUBISHI IGBT MODULES CM50RL-24NF HIGH POWER SWITCHING USE CM50RL-24NF ¡IC . 50A ¡VCES . 1200V ¡Insulated Type ¡7-elements in a pack

Contextual Info: SK10GD126ET # , -. /0        Absolute Maximum Ratings Symbol Conditions IGBT 123 #4 , -. / % #4 , 6.7 / %9: 6-77 1 6. ' # , 87 / 66 ' 6; ' < -7 1 #4 , 6-. / 67 @ # , -. / -. ' # , 87 / 6A ' B7 ' %9:, -  % IGBT Module

ATA6026

Abstract: ATA6026-PHQW JESD78 QFN32
Contextual Info: Features • PWM and Direction-controlled Driving of Four Externally Powered NMOS Transistors • Internal Charge Pump Provides Gate Voltages for High-side Drivers in Permanent ON Mode and Supplies the Gate of the External Battery Reverse Protection NMOS • 5V Regulator With External Power Device NPN and Current Limitation Function

Contextual Info: bOE J> • fl235b05 00M5tiôE 133 « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF SIMOPAC Module VDS / D R DS on BSM151 = 500 V =48 A “ 0.12 £2 • Power module • Single switch • N channel • Enhancement mode • Package with insulated metal base plate

G7N60A4

Abstract: G7N60 g7n60a TA49331 HGT1S7N60A4S9A HGTG7N60A4 HGTP7N60A4 LD26
Contextual Info: HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These

sma6823

Abstract: SMA6823MP Leadform B105 CF35 G746 SC102 SMA6820MP YG6260 2451 mosfet
Contextual Info: SMA6823MP High Voltage 3-Phase Motor Driver Features and Benefits Description ▪ Built-in pre-drive IC and 3 bootstrap diodes as a high-side drive power supply ▪ CMOS compatible input 5 V ▪ High-side gate driver using bootstrap circuit or floating power supply

Contextual Info: SK 40 DH SEMITOP 3 Half Controlled Bridge Rectifier SK 40 DH Preliminary Data Features                             !   " #   $  %&''  "  " 

sla6828

Abstract: flyback samsung SLA6828M B105 CF35 G746 SC102 YG6260 samsung flyback pin diagram G746 rohs
Contextual Info: SLA6828M High Voltage 3-Phase Motor Driver Features and Benefits ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ Description Built-in pre-drive IC MOSFET power element CMOS compatible input 5 V High-side gate driver using bootstrap circuit or floating power supply Built-in protection circuit for controlling power supply

CM75DY-34A

Contextual Info: MITSUBISHI IGBT MODULES CM75DY-34A HIGH POWER SWITCHING USE CM75DY-34A ¡IC . 75A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack

CM400DY-34A

Contextual Info: MITSUBISHI IGBT MODULES CM400DY-34A HIGH POWER SWITCHING USE CM400DY-34A ¡IC . 400A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack

CM75TL-24NF

Abstract: 75A2
Contextual Info: MITSUBISHI IGBT MODULES CM75TL-24NF HIGH POWER SWITCHING USE CM75TL-24NF ¡IC . 75A ¡VCES . 1200V ¡Insulated Type ¡6-elements in a pack

powerpc 7447a

Abstract: TEA 2822 M 5387B TT 2076 G38-87 JESD51-2 PC7447 PC7447A PC7400
Contextual Info: Features • • • • • • • • • • • • • • • 3000 Dhrystone 2.1 MIPS at 1.3 GHz Selectable Bus Clock 30 CPU Bus Dividers up to 28x Selectable MPx/60x Interface Voltage (1.8V, 2.5V) PD Typically 18W at 1.33 GHz at VDD = 1.3V; 8.0W at 1 GHz at VDD = 1.1V

"MOSFET Module"

Abstract: E80276 FM600TU-3A "MOSFET Module" fm600tu-3a PU90
Contextual Info: MITSUBISHI <MOSFET MODULE> FM600TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM600TU-3A ● ID rms . 300A ● VDSS . 150V ● Insulated

"MOSFET Module"

Abstract: E80276 FM600TU-2A
Contextual Info: MITSUBISHI <MOSFET MODULE> FM600TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM600TU-2A ● ID rms . 300A ● VDSS . 100V ● Insulated

MTX9P08

Abstract: MTX9P10 MTX9P12 MTX9P14 MTX9P16 MTX9P18 MTX9P20 MTX9P22 MTX9P24
Contextual Info: MTX9P 980 nm High-Power Pump Laser Modules Applications • Erbium-Doped Optical Amplifiers · Optical Repeaters · Optical Power Boosters The MTX9P pump laser module is an InGaAs/GaAIAs multi-quantum-well laser device that emits at 980nm, and is packaged in a 14-pin hermetic butterfly package. The

Contextual Info: Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S External Dimensions unit: mm 3.2 ± 0.2 4.2 ± 0.2 2.8 ± 0.2 a (2.0) 0.95± 0.15 (Ta = 25ºC) Ratings Unit DC Input Voltage VIN 35 V Output Control Terminal Voltage VC VIN V Output Current

486GX

Abstract: sms pic dd136 Panasonic SRAM pcmcia
Contextual Info: Panasonic For Information Equipment MN5523A Low Power CPU Controller and I/O Peripheral LSI for Compact PC/AT Computers • Overview The MN5523A is a chip that supports CPU directly, and I/O peripherals. It is designed for use in pen-based personal digi­

A101 diode

Contextual Info: SCANSTA112 www.ti.com SNLS161I – DECEMBER 2002 – REVISED APRIL 2013 SCANSTA112 7-Port Multidrop IEEE 1149.1 JTAG Multiplexer Check for Samples: SCANSTA112 FEATURES DESCRIPTION • The SCANSTA112 extends the IEEE Std. 1149.1 test bus into a multidrop test bus environment. The