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    DIODE G7 Search Results

    DIODE G7 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    DIODE G7 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FMB-24M

    Contextual Info: SANKEN ELECTRIC COMPANY, LTD. SPECIFICATIONS DEVICE TYPE NAME SANKEN SILICON SCHOTTKY BARRIER DIODE FMB-24M 1. Scope 2. General The present specifications shall apply to Sanken silicon diode, FMB-24M. 2.1 Type Silicon Schottky Barrier Diode 2.2 Structure Resin Molded


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    FMB-24M FMB-24M. UL94V-0 September/28/ SSA-03414 FMB-24M PDF

    CL67

    Abstract: 32MHz quartz RESONATOR 550KQ
    Contextual Info: iC-VJ, iC-VJZ •Haus LASER DIODE CONTROLLER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Laser diode driver up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode Laser-current monitor with current or voltage output


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    250mA 500/iA CL67 32MHz quartz RESONATOR 550KQ PDF

    amd FX PIN LAYOUT

    Abstract: G701
    Contextual Info: iC-VJ, iC-VJZ if f if ll LASER DIODE CONTROLLER f e a ^ u ;b Ë ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 3 |^ Laser diode driver of up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode


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    200kHz 250mA amd FX PIN LAYOUT G701 PDF

    Contextual Info: iC-VJ, iC-VJZ LASER DIODE CONTROLLER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Transmitter for laser light barriers from 1 to 200kHz ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ◊ ◊ Laser diode driver of up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode


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    200kHz 250mA PDF

    diode 107 10K 501

    Abstract: G103 G003 G101 G102 32MHz quartz RESONATOR amd IC amplifier G701 11nQ
    Contextual Info: iC-VJ, iC-VJZ LASER DIODE CONTROLLER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Transmitter for laser light barriers from 1 to 200kHz ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ◊ ◊ Laser diode driver of up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode


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    200kHz 250mA exter9-6135-9292-0 diode 107 10K 501 G103 G003 G101 G102 32MHz quartz RESONATOR amd IC amplifier G701 11nQ PDF

    72P1

    Abstract: A4015
    Contextual Info: N E C ELECTRONICS INC b2E J> m bM57S2S D37cicib 131 « N E C E DATA SHEET N E C LASER DIODE MODULE ELECTRON DEVICE Q ^ | - y 72P 1 5 5 0 nm OPTICAL FIBER COMM UNICATIONS InGaAsP DC-PBH PULSED LASER DIODE MODULE DESCRIPTION NDL5772P is a 1 550 nm pulsed laser diode DIP module with singlemode fiber and internal thermo-electric cooler. It is


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    bM57S2S NDL5772P NDL5772P NDL5060 NDL5061 NDL5762P NDL5764P) NDL5070 NDL5071 72P1 A4015 PDF

    UPS APC 800 CIRCUIT

    Abstract: APC UPS CIRCUIT BOARD collimated LED 670 nm Laser Diode 808 2 pin 1000 mw APC back UPS RS 800 UPS APC CIRCUIT 1550nm 5mw laser diode APC UPS repair temperature controlled fan project Fabry-Perot-Laser-Diode 1310 1550
    Contextual Info: Laser Diode Products for the OEM  INTRODUCTORY INFORMATiON Who we are & what we do Thank you for your interest in Power Who we are Technology, Inc. The past three decades k Manufacturer of OEM laser diode products for analytical, biomedical, & industrial applications


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    PDF

    DIODE G7

    Abstract: BAV99LT1 G7 diode
    Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode BAV99LT1 3 2 CATHODE 1 ANODE 3 CAHODE/ANODE 1 2 DEVICE MARKING CASE 318–08, STYLE 11 BAV99LT1 = A7 SOT–23 TO–236AB MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current


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    BAV99LT1 236AB) DIODE G7 BAV99LT1 G7 diode PDF

    SMBJ130CA

    Contextual Info: P6 SMBJ 6.5.P6 SMBJ 130CA power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter , @ 5 ;   .   Absolute Maximum Ratings Symbol Conditions Surface mount diode Unidirectional and bidirectional Transient


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    130CA 130CA SMBJ130CA PDF

    037570 DIODE

    Contextual Info: bEE D m bl4275E5 OOaTSb'] SÛT HNECE N E C ELECTRONICS INC LASER DIODE / N D L5650D 1 5 5 0 nm OPTICAL FIBER C O M M U N IC A T IO N S InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE DE SC RIPTIO N N D L 5 6 5 0 D is a 1 550 nm DFB D istrib u te d Feed-back laser diode c hip on carrier w ith rib b o n lead.


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    bl4275E5 L5650D 037570 DIODE PDF

    Contextual Info: VRM = 600 V, IF AV = 60 A, trr = 100 ns(max.) Fast Recovery and High Power Diode CTNS-4606S Features Package The CTNS-4606S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 600 V. Typical forward voltage drop of 1.15


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    CTNS-4606S CTNS-4606S CTNS-4606S-DS PDF

    atmel 904

    Abstract: atmel 1030 AC100 T2525 ATMEL 1047 T2525/ATA2526
    Contextual Info: Features • • • • • • No External Components Except PIN Diode Supply-voltage Range: 4.5 V to 5.5 V Automatic Sensitivity Adaptation AGC Automatic Strong Signal Adaptation (ATC) Enhanced Immunity Against Ambient Light Disturbances Available for Carrier Frequencies between 30 kHz to 76 kHz; Adjusted by Zener Diode


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    T2525 T2525 4657C atmel 904 atmel 1030 AC100 ATMEL 1047 T2525/ATA2526 PDF

    Contextual Info: Features • • • • • • No External Components Except PIN Diode Supply-voltage Range: 4.5 V to 5.5 V Automatic Sensitivity Adaptation AGC Automatic Strong Signal Adaptation (ATC) Enhanced Immunity Against Ambient Light Disturbances Available for Carrier Frequencies between 30 kHz to 76 kHz; Adjusted by Zener Diode


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    T2525 T2525 4657D PDF

    XA4202

    Contextual Info: VRM = 200 V, IF AV = 20 A, trr = 25 ns(max.) Fast Recovery and High Power Diode CTXA-4202S Features Package The CTXA-4202S is a fast recovery diode which realize a peak reverse voltage of 200 V, a typical forward voltage drop of 0.90 V and typical trr of 18 ns


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    CTXA-4202S CTXA-4202S CTXA-4202S-DS XA4202 PDF

    Contextual Info: VRM = 600 V, IF AV = 30 A, trr = 50 ns(max.) Fast Recovery and High Power Diode Preliminary CTNS-6306S Features Package The CTNS-6306S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 600 V. Typical forward voltage drop of 1.15


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    CTNS-6306S CTNS-6306S O-247-3L CTNS-6306S-DS PDF

    Contextual Info: VRM = 600 V, IF AV = 60 A, trr = 35 ns(max.) Fast Recovery and High Power Diode CTXS-6606S Preliminary Features Package The CTXS-6606S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 600 V. Typical forward voltage drop of 1.45


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    CTXS-6606S CTXS-6606S O-247-3L CTXS-6606S-DS PDF

    Contextual Info: VRM = 600 V, IF AV = 60 A, trr = 100 ns(max.) Fast Recovery and High Power Diode CTNS-6606S Preliminary Features Package The CTNS-6606S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 600 V. Typical forward voltage drop of 1.15


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    CTNS-6606S CTNS-6606S O-247-3L CTNS-6606S-DS PDF

    LDA-56

    Contextual Info: LDA-56 v 1.0 12.08.2013 Description LDA-56 is a complete laser diode assembly, suitable for standard 5.6mm TO-Can laser diodes. It features focusable acryl collimating lens and laser diode mounting flange with threaded latching. Made from black burnished brass, and tooled on high precision CNC machinery, LDA56 offers excellent dimensional accuracy and axial alignment.


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    LDA-56 LDA-56 LDA56 PDF

    T41G

    Contextual Info: OSHIBA < LASER/FBR OPTIC 01 t • 10172S2 DOlbDIS 7 ■ TOSb O T-41-G7 TOSHIBA LASER DIODE TOLD 370 Features • Wavelength 1,55/im • Simple Coaxial Package • Suitable for Local Subscriber Networks • Single-mode Fiber Pigtail 10/125/tm) • Hermetically Sealed


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    10172S2 T-41-G7 55/im 10/125/tm) T-41-50 1000o 50/125pm) T41G PDF

    Contextual Info: VVZB 120 VRRM = 1200/1600 V IdAV = 120 A Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary data VRRM O1 S1 Type M1 I1 E1 V 1200 1600 VVZB 120-12 io2 VVZB 120-16 io2 W1 L7 G7 C7 O10 IdAV IFRMS/ITRMS


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    20090618a PDF

    Contextual Info: G788 Global Mixed-mode Technology ±1°C Remote and Local Temperature Sensor with SMBus Serial Interface Features General Description „ The G788 is a precise digital thermometer that reports the temperature of both a remote sensor and its own package. The remote sensor is a diode-connected transistor typically a low-cost, easily mounted 2N3904 NPN


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    G788-1 G788P81U 2N3904 2200pF PDF

    G7 diode

    Abstract: DIODE G7
    Contextual Info: SK 45 UT power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik SEMITOP 3 Antiparallel Thyristor Module SK 45 UT Preliminary Data


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    PDF

    Contextual Info: SKB 2 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik !"53 !""3 !!"35  4 " ! && 7&& A&& ! ;& %)+ )+& 2


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    Contextual Info: P6 SMBJ 150.P6 SMBJ 180CA ,* @ 5 ;   .   Absolute Maximum Ratings Symbol Conditions Surface mount diode Unidirectional and bidirectional Transient Voltage Suppressor diodes Values Units  : 5 : 2 *  G7: 25 G7:   -   .   


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    180CA PDF