DIODE CVJ Search Results
DIODE CVJ Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE CVJ Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
CL67
Abstract: 32MHz quartz RESONATOR 550KQ
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250ma500/iacl6732mhz quartz resonator+1 | |
amd FX PIN LAYOUT
Abstract: G701
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200khz250maamd fx pin layoutg701 | |
d2f20Contextual Info: mm R ectifier Diode Single Diode • O U T L IN E D IM E N S IO N S Case : 2 F Type D2FD Unit • Cathode mark 600V 1.4A I :=■ OCSI LlCVÌ coco ' \ Type No. Class 5 " cvj a % I 2.5 ^ 6.1 Date code y ;u 1j > ?> \°" j K D# # / > Standard soldering pad C0.8 |
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d2f20d2f60 | |
marking PA
Abstract: CPH3106 CPH6701 "marking PA"
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enn6007acph6701cph3106sbs001+1 | |
monolitic R 38
Abstract: CXB1549Q
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cxb1549q50map-p25gbps40pin+5 | |
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Contextual Info: SONY _ CXB1549Q Laser Diode Driver Prelim inary Description The CXB1549Q is a high-speed monolithic Laser Diode Driver/Current Switch with ECL/PECL input level. Open collector outputs are provided at the output pins Q, QB and have the capacity of driving |
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cxb1549q50map-p25gbps40pin+3 | |
Sony 182Contextual Info: SLU301VR SONY. 80/70mW High Power Laser Diode with a Detachable Fiber Description SLU301VR is a high power laser diode based on the SLD301V w ith a detachable fiber. Direct coupling to a fiber having an FC connector is possible w ithout any optical adjustment. |
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slu301vr80/70mwsld301vslu304xr+1 | |
1N1743
Abstract: IN5234 IN5008 1N4202 zener diode 1N PH 48 diode 1n1418 1NS232 zener diode c51 ph 1n587 1N4465
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1n2251n22601n2271n228+16 | |
UAF42
Abstract: UAF42 tube Philips schema UCH41 UCH42 diode ponte uaf 42 nf schaltungen RK 69 yb 939
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uaf42pr02641\uaf42jch42+9 | |
kp50a
Abstract: kp20a ZP200A KP300A KP200A ZP300A kp5a ZP20A zp5a KP100a
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zlkp100azlkp150azlkp200azlkp250a+11 | |
SG10SC9
Abstract: marking JC diode SG10SC9M
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sg10sc9mfto-220gi50hztcj533-1+2 | |
Diode Marking ef
Abstract: Diode type SMD marking PJ smd marking pj marking smd NU pj SMD diode smd diode pj D2FS4 smd Pj 75 pj 71 diode
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j53z-1diode marking efdiode type smd marking pjsmd marking pj+6 | |
SG10SC9
Abstract: SG10SC9M
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sg10sc9mfto-220gi50hztcj533-1+1 | |
Diode smd code BU
Abstract: D1FK60 marking A.Y MZ 251 fly wheel smd diode 0.5A fast 600v TJ2A smd 2AT
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d1fk60j532-1diode smd code bumarking a.y+5 | |
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wc smd diode
Abstract: smd marking wc DE5S4M DIODE smd marking MO DIODE 56 SMD
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j53z-1wc smd diodesmd marking wcde5s4m+2 | |
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Contextual Info: Schottky Barrier Diode Axial Diode mtm D2S4M OUTLINE Unit: mm Weight 0.38g Typ Package I AX078 30 40V 2A 8 3. Feature • PRRSM^y^ VÍ/X<SÍ¡E • D C /D C 3 • * Œ .y -A .O A * itg * <R0 H (D * Main Use • • • • • 7 27.5 5 27.5 • Tj=150°C |
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ax078150tcj533-1 | |
smd code 2AT
Abstract: D1FL20U smd code marking 1F marking code 2At marking LZ smd diode SMD MARKING CODE ju SMD MARKING CODE vk fly wheel smd regulator marking VA D1FL20
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d1fl20utrr-35nsj532-1smd code 2at+8 | |
D30L60Contextual Info: Super Fast Recovery Diode Single Diode •¿m H D30L60 OUTLINE Unit : mm W eight 4.3« T yp P a c k a g e : IT O -3 P 5.5 15 600V 30A a -Æ H K W ) Date code N Feature • raiHŒ FRD • • • • • e y -fX • trr=150ns • yJlst-Jb F S3T High Voltage Super FRD |
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d30l60150nsj533-1 | |
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Contextual Info: Schottky Barrier Diode wnnm o u t l i n e Single Diode D3FS4A Weight 0.16g Typ 4 0 V 2 .6 A / Cathode mark Feature • /J ^ S M D Unit-mm Package I 2F • V f =0.45V • Small SMD • Low V f=0.45V • P rrsm • P r rs m R ating (B — M — @ • fü r |
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j53z-1 | |
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Contextual Info: S U g x V W - I j- 11 —>a.* y X lounting Surface M ounting Device I-' V4>W . Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS DF30SC4M Case : STO-220 40V 30A •S M D • T j 15013 •Pbrsm s’IKz?yi/tUe¡e f f l • 'J v § J * « > 7 iïg * m •S R S S |
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df30sc4msto-220 | |
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Contextual Info: Super Fast Recovery Diode Single Diode m tm m o u tlin e Package I 1F D1FL20U Unit I mm Weight 0.058g Typ *7 -K v -? 200V 1.1 A Feature *<D • Small SMD • Low Noise • trr-35ns • /J ^ S M D • e y - r x • trr=35ns Main Use • D C / D C n y J Ï- i ? |
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d1fl20utrr-35ns | |
diode d3s6m
Abstract: 251C
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15ffcj533-1diode d3s6m251c | |
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Contextual Info: CVJ10F30 Schottky Barrier Diode Silicon Epitaxial CVJ10F30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.47 V (typ.) 3. Packaging and Internal Circuit 1: Anode 1 2: NC 3: Anode 2 4: Cathode 2 5: Cathode 1 UFV Start of commercial production |
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cvj10f30 | |
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Contextual Info: J Ï 'J T S H '* —K JW*Ü Schottky Barrier Diode Single Diode • O U T L IN E D IM E N S IO N S S5S4M 40V 5A ■ R A T IN G S A bsolute Maximum R atings « B ¿~~A~ Item im & f s t S to ra g e Tem perature O perating J u n c tio n Tem perature A M & K ff. |
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