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    CVJ10F30 Search Results

    CVJ10F30 Datasheets (3)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CVJ10F30
    Toshiba Japanese - Diodes Original PDF 253.08KB 5
    CVJ10F30
    Toshiba Diodes Original PDF 152.29KB 5
    CVJ10F30,LF
    Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - X34 SMALL-SIGNAL SCHOTTKY BARRIE Original PDF 153.68KB
    SF Impression Pixel

    CVJ10F30 Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components CVJ10F30-LF

    DIODE ARRAY SCHOTTKY 30V 1A UFV
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    DigiKey () CVJ10F30-LF Digi-Reel 3,180 1
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    CVJ10F30-LF Tape & Reel 3,180 3,000
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    CVJ10F30-LF Cut Tape 180 1
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    Toshiba America Electronic Components CVJ10F30,LF

    Schottky Rectifier, 32 V, 1 A, Dual Independent, SOT-353F, 5 Pins, 570 mV - Tape and Reel (Alt: CVJ10F30,LF)
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    Avnet Americas CVJ10F30,LF Tape & Reel 16 Weeks 3,000
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    Mouser Electronics () CVJ10F30,LF 49,149
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    CVJ10F30,LF 22,149
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    TTI CVJ10F30,LF Reel 3,000
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    Toshiba America Electronic Components CVJ10F30,LF(T

    Small Signal Schottky Diode, Dual Parallel, 32 V, 1 A, 570 mV, 5 A, 125 ?C, SOT-353F, 5 Pins (Alt: CVJ10F30,LF(T)
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    Avnet Asia CVJ10F30,LF(T 3,000
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    EBV Elektronik CVJ10F30,LF(T 15 Weeks 3,000
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    CVJ10F30 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: CVJ10F30 ショットキバリアダイオード シリコンエピタキシャル形 CVJ10F30 1. 用途 • 高速スイッチング用 2. 特長 1 順電圧が小さい。: VF(3) = 0.47 V (標準) 3. 外観と内部回路構成図 1: アノード 1 2: NC


    Original
    CVJ10F30 PDF

    Contextual Info: CVJ10F30 Schottky Barrier Diode Silicon Epitaxial CVJ10F30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.47 V (typ.) 3. Packaging and Internal Circuit 1: Anode 1 2: NC 3: Anode 2 4: Cathode 2 5: Cathode 1 UFV 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )


    Original
    CVJ10F30 PDF

    Contextual Info: CVJ10F30 Schottky Barrier Diode Silicon Epitaxial CVJ10F30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.47 V (typ.) 3. Packaging and Internal Circuit 1: Anode 1 2: NC 3: Anode 2 4: Cathode 2 5: Cathode 1 UFV Start of commercial production


    Original
    CVJ10F30 PDF

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original
    200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R PDF

    smd diode Lz zener

    Abstract: CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B
    Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2011/9 SCE0004L Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original
    SCE0004L TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 smd diode Lz zener CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B PDF