DIODE BY205 Search Results

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

TIP162

Abstract: diode by205 by205 diode BY205-600 IRF140 TIP160 TIP161
Contextual Info: TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS ● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE sat of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO SOT-93 PACKAGE (TOP VIEW)

Contextual Info: TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS ● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE sat of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO SOT-93 PACKAGE (TOP VIEW)

TIP162

Abstract: diode by205 tip160 US Global Sat tip162 to-3p
Contextual Info: TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS ● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE sat of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO SOT-93 PACKAGE (TOP VIEW)

BY205-600

Abstract: TIP162 by205 diode BY205/600 diode by205 TIP160 by205 IRF140 TIP161 TIP161 transistor
Contextual Info: TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS ● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE sat of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO SOT-93 PACKAGE (TOP VIEW)

diode by205

Abstract: TIP162 by205 by205 diode BY205/600 BY205-600 IRF140 TIP160 TIP161
Contextual Info: TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE sat of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

Contextual Info: TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS ● 80 W at 25°C Case Temperature ● 7 A Continuous Collector Current ● 10 A Peak Collector Current ● Maximum VCE sat of 2 V at I C = 5 A B 1 ● ICEX(sus) 7 A at rated V(BR)CEO C 2 E 3 TO-220 PACKAGE

tip150

Contextual Info: TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS ● 80 W at 25°C Case Temperature ● 7 A Continuous Collector Current ● 10 A Peak Collector Current ● Maximum VCE sat of 2 V at I C = 5 A B 1 ● ICEX(sus) 7 A at rated V(BR)CEO C 2 E 3 TO-220 PACKAGE

TIP152

Abstract: by205 diode tip150 BY205-600 IRF140 TIP151 diode by205
Contextual Info: TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS ● 80 W at 25°C Case Temperature ● 7 A Continuous Collector Current ● 10 A Peak Collector Current ● Maximum VCE sat of 2 V at I C = 5 A B 1 ● ICEX(sus) 7 A at rated V(BR)CEO C 2 E 3 TO-220 PACKAGE

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

by205 diode

Abstract: diode by205 400 diode by205
Contextual Info: TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS ● Rugged Epitaxial Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● txo typically 320 ns, IC = 10 A This series is currently available, but

diode by205

Abstract: by205 diode diode by205 400 by205 BY205-400 TRANSISTOR D 1978 TIPL790 TRANSISTOR 2n2904 2N2222 2N2904
Contextual Info: TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS ● Rugged Epitaxial Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● txo typically 320 ns, IC = 10 A TO-220 PACKAGE TOP VIEW B 1 C 2 E

by205 diode

Abstract: diode by205
Contextual Info: TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS ● Rugged Epitaxial Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● txo typically 320 ns, IC = 10 A This series is obsolete and not recommended for new designs.

by205

Abstract: by205 diode BY205/600 tip150 BY205-600 IRF140 TIP151 TIP152 diode by205
Contextual Info: TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● 80 W at 25°C Case Temperature ● 7 A Continuous Collector Current ● 10 A Peak Collector Current ● Maximum VCE sat of 2 V at IC = 5 A ● ICEX(sus) 7 A at rated V(BR)CEO

by205 diode

Abstract: diode by205 diode by205 400 TIPL790A 2N2222 2N2904 BY205-400 D44H11 D45H11 TIPL790
Contextual Info: TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 ● Rugged Epitaxial Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published