DIODE BRIDGE 2170 Search Results

thyristor control arc welding rectifier circuit

Abstract: 400 amp SCR used for welding rectifier welding transformer SCR ABB thyristor modules PN5-10DA 400 amp thyristor used for welding rectifier MDS100 three phase triac control arc welder inverter 3KW INDUCTION HEATING POWER SUPPLY
Contextual Info: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing solid state relays, thyristor modules, diode modules, thyristor diode modules, fast recovery diode, single phase & three phase bridge rectifier and press fit diodes etc. along with about 150

4005A

Abstract: mosfet induction heater T4 3560 welding rectifier D-68623
Contextual Info: VBH 40-05A Advanced Technical Information Module with HiPerFETTM H-Bridge and Single Phase Mains Rectifier Bridge VDSS = 500 V Ω RDSon = 116 mΩ VRRM = 1200 V IDAV25 = 90 A Application Mains Rectifier Bridge D1 - D4 Symbol Conditions Maximum Ratings VRRM

ixys VBH 40-05B

Abstract: mosfet induction heater D-68623 T4 3560 80c40
Contextual Info: VBH 40-05B Module with HiPerFETTM H-Bridge and Single Phase Mains Rectifier Bridge VDSS = 500 V Ω RDSon = 116 mΩ Preliminary VRRM = 1200 V IDAV25 = 90 A Mains Rectifier Bridge D1 - D4 Application Symbol Conditions Maximum Ratings VRRM 1200 V 45 33 A A

DIODE T4 3560

Abstract: T4 3560 B ixys VBH 40-05B T4 3560 6 diode bridge 2170
Contextual Info: VBH 40-05B Module with HiPerFETTM H-Bridge and Single Phase Mains Rectifier Bridge VDSS = 500 V RDSon = 116 m Ω VRRM = 1200 V IDAV25 = 90 A Preliminary data pin configuration see outlines Application Symbol Conditions Maximum Ratings VRRM 1200 V 45 33 A A

WT 7520

Abstract: diode lt 8220 SAC 1630 L saa 1070 tic125 tsumu T920 thyristor GE 1780 scr 3f scr thyristor power diode 1000 volt 700 amper
Contextual Info: POWER SEMICONDUCTORS IN C 1TE D • 72^14^0 D0003b4 1 ■ POS "T-Ol-01 T'-ZS-C>| D PACK THYRISTOR POWER PACK TH YR ISTO R S 28mm. <25 mm.) RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature

FS300R12OE4P

Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Contextual Info: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in

zd2500

Abstract: WT 7520 CS 601 thyristor TIC125 T920 thyristor power diode 1000 volt 700 amper thyristor 100 amper diode lt 8220 cs 1694 eo saa 1070
Contextual Info: POWER SEMICONDUCTORS INC 1TE D • 7 2 ^ 1 4 ^ 0 D0003b4 1 ■ POS " T -O l-0 1 T '- Z S - C > | RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature Symbol Units ' t RMS

DT99-8

Abstract: ir2172 Design Tip IR217x AN-1052 DT99 IR2175S IR2170 IR2171 IR2175 passive filters
Contextual Info: Application Note AN-1052 Using the IR217x Linear Current Sensing ICs By Jonathan Adams 1. Basic Functionality. 1 2. Bootstrap Circuit . 1

transistor tt 2170

Abstract: AN569 MTP50P03HDL motorola cm 340 a transistor p50p0
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP50P03HDL HDTM O S E -FE T ™ P o w er Field E ffe c t T ran sisto r Motorola Preferred Device P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS on = 0.025 OHM

MSPD2018

Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Contextual Info: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800

M50P03HDL

Abstract: m50p03 1250 snappy mtp50p03hdl AN569
Contextual Info: MTP50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for

M50P03HDL

Abstract: AN569 MTP50P03HDL m50p03
Contextual Info: MTP50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

M50P03HDLG

Abstract: m50p03hdl m50p03 mtp50p03hdlg 1250 snappy AN569 MTP50P03HDL TF218
Contextual Info: MTP50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

MTP50N03

Abstract: mtp50n03hdl AN569 MTP50P03HDL TF218
Contextual Info: MTP50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for

M50P03HDLG

Contextual Info: MTP50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

50P03HG

Contextual Info: MTB50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

50P03HG

Abstract: 50p03h
Contextual Info: MTB50P03HDL, MVB50P03HDLT4G P-Channel Power MOSFET 50 A, 30 V, Logic Level D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

50p03hg

Abstract: 50p03h MTB50P03HG MTB50P03HDL 50p03 AN569 MTB50P03HDLG MTB50P03HDLT4 MTB50P03HDLT4G
Contextual Info: MTB50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

TP50P03

Contextual Info: MOTOROLA O rder this docum ent by M TP50P03HDL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP50P03HDL HDTMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device P-Channel Enhancement-Mode Silicon Gate This advanced h ig h -c e ll density HDTMOS power FET is

4435m

Abstract: 4431 mosfet
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r's Data S heet MTB50P03HDL HD TM O S E -F E T ™ High Energy P o w er FET D2PAK fo r S u rfa c e M ount M o t o r o la P re fe rre d D e v ic e TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS on = 0.025 OHM

m50p03

Abstract: M50P03HDL m50p03H
Contextual Info: MTB50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

Contextual Info: MOTOROLA Order this document by MTB50P03HDL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB50P03HDL Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS on = 0.025 OHM

M50P03HDL

Abstract: m50p03 AN569 MTB50P03HDL MTB50P03HDLT4
Contextual Info: MTB50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for

Contextual Info: MOTOROLA O rder this docum ent by M TB50P03HDL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB50P03HDL HDTMOS E-FET™ High Energy Power FET D2PAK for Surface Mount Motorola Preferred Device TM OS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS on = 0.025 OHM