P-Channel MOSFET with -60V drain-source voltage, -50A continuous drain current, 25mΩ typical RDS(on) at -10V gate voltage, advanced trench technology for low on-resistance and high cell density, suitable for power management and battery-powered systems.
Abstract: AN569 MTP50P03HDL motorola cm 340 a transistor p50p0
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet P50P03HDL HDTM O S E -FE T ™ P o w er Field E ffe c t T ran sisto r Motorola Preferred Device P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS on = 0.025 OHM