DIODE BON Search Results

optical source

Abstract: Fabry-Perot 1550 nm Fabry-Perot 1550 nm butterfly Laser InP laser transmitter datasheet laser 1550 spectral laser 1550 nm laser transmitter 1550 nm TO56 laser TO-CAN
Contextual Info: Fabry-Perot Laser Diode High-power 1550 nm laser diode Preliminary DESCRIPTION Quantum Photonics’ Fabry-Perot (FP) laser diode is based on a high-power InP ridge waveguide laser structure. Advanced epitaxial wafer growth techniques and die bonding processes enable high-power laser diode operation in the eye-safe 1550 nm wavelength

biconvex lens with focal length 1 m and diameter 25.4 mm

Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Contextual Info: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power

Germanium diode

Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
Contextual Info: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes

22BW3

Abstract: E12-70 general electric
Contextual Info: — PRODUCT INFORMATION — 22BW3 Compactron Diode TUBES Page 1 FOR TV DAMPING DIODE APPLICATIONS • DIFFUSION BONDED CATHODE • 5000 VOLTS DC • 175 MILLIAMPERES DC The 22BW3 is a compactron, single heater-cathode type diode intended for service as the

pn junction diode structure

Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Contextual Info: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss

6cj3

Abstract: 6cj3 tube general electric
Contextual Info: — PRODUCT INFORMATION — E L E C T R O N IC mmmmm IN A C T IO N — w> TUBES Page 1 6CJ3 Diode FOR TV DAMPING DIODE APPLICATIONS • COLOR TV TYPE • DIFFUSION BONDED CATHODE • LOW TUBE DROP • 5000 VOLTS DC • 350 MILLIAMPERES DC The 6CJ3 is a single heater-cathode type diode intended for service as the damping diode

JAN 1N4500

Abstract: 1N4500
Contextual Info: COMPUTER DIODE JAN & JANTX 1N4500 500m A Switching Diode FEATU RES D ESCR IPTIO N • • • • • This device is a fast sw itching, high con­ ductance diode for military, space, high rel and other systems. M etallurgical Bond Qualified to MIL-S-19500/403

6CG3

Abstract: 6CG3 tube E12-70 general electric
Contextual Info: — PRODUCT INFORMATION — Page 1 6CG3 Compactron Diode TUBES • COLOR TV TYPE FOR TV DAMPING DIODE APPLICATIONS • LOW TUBE DROP • 5000 VOLTS DC • DIFFUSION BONDED CATHODE • 350 MILLIAMPERES DC The 6CG3 is a compactron containing a single heater-cathode type diode. It is intended

JAN 1N4500

Contextual Info: COMPUTER DIODE 1N4500, JAN & JANTX 1N4500 500mA Switching Diode FEATURES DESCRIPTION • • • • T h is d evice ¡s a fast sw itching, high co n ­ d u cta n ce diode for m ilitary, space, high rel and other systems. Metallurgical Bond Qualified to MIL-S-19500/403

19de3

Abstract: E12-70 Scans-0017327 general electric K-55611-TD298-1A
Contextual Info: — PRODUCT INFORMATION — Page 1 Compactron Diode wees FOR TV DAMPING DIODE APPLICATIONS COLOR TV TYPE • DIFFUSION BONDED CATHODE • 350 MILLIAMPERES DC • LOW TUBE DROP 5000 VOLTS DC The 19DE3 is a compactron containing a s in g le heater-cathode type diode. It is intended for service as

Diode Motorola 711 2N2905A

Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

HSCH-9161

Abstract: HSMS-2850 United Detector silicon diode
Contextual Info: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through

1gg5

Abstract: HSCH-9161 AGILENT TECHNOLOGIES 9161 4009 w-band pn#2 hsch-9161 W-band diode GaAs Detector Diode
Contextual Info: Agilent HSCH-9161 GaAs Detector Diode Data Sheet Description The HSCH-9161 is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode MBID process. Applications This diode is suitable for medium-low barrier, zero bias detector applications.The HSCH-9161

TD-101

Abstract: TD101 12FX 6bw3 E12-70 R-5561 general electric r5561
Contextual Info: — PRODUCT INFORMATION — Page 1 6BW3 Compactron Diode TUBES • COLOR TV TYPE FOR TV DAMPING DIODE APPLICATIONS ■ DIFFUSION BONDED CATHODE ■ 5000 VOLTS DC ■ 175 MILLIAMPERES DC The 6BW 3 is a compactron containing a s in g le heater-cathode type diode. It is intended for s e rvice as the

zener diode

Abstract: WT-Z108N
Contextual Info: WT-Z108N Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N 2. Structure: 2-1 Planar type: Silicon Diode

Contextual Info: Linear Models for Diode Surface Mount Packages Application Note 1124 Introduction When linear or non-linear analyses are performed on diode circuits, both the diode chip and its package must be accurately modeled. The diode chip or die itself may be modeled using SPICE parameters,

LL HP

Abstract: chip die hp SOT 23 Package equivalent
Contextual Info: Linear Models for Diode Surface Mount Packages Application Note 1124 Introduction When linear or non-linear analyses are performed on diode circuits, both the diode chip and its package must be accurately modeled. The diode chip or die itself may be modeled using SPICE parameters,

Contextual Info: WT-Z108P Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P 2. Structure: 2-1 Planar type: Silicon Diode

ZENER Vr 3V

Abstract: Zener Diode 3v zener- diode WT-Z111N
Contextual Info: WT-Z111N Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z111N 2. Structure: 2-1 Planar type: Silicon Diode

Contextual Info: WT-Z108N-4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N-4 2. Structure: 2-1 Planar type: Silicon Diode

3.2 v zener diode

Contextual Info: WT-Z108P-AU Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-AU 2. Structure: 2-1 Planar type: Silicon Diode

um 54 diode

Abstract: zener diode chip 3.2 v zener diode
Contextual Info: WT-Z108N-AU Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N-AU 2. Structure: 2-1 Planar type: Silicon Diode

WT-Z108P

Contextual Info: WT-Z108P-4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-4 2. Structure: 2-1 Planar type: Silicon Diode

HSCH-9161

Abstract: United Detector silicon diode application note 979
Contextual Info: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Features Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through 110 GHz. It