DIODE BON Search Results

6cj3

Abstract: 6cj3 tube general electric
Contextual Info: — PRODUCT INFORMATION — E L E C T R O N IC mmmmm IN A C T IO N — w> TUBES Page 1 6CJ3 Diode FOR TV DAMPING DIODE APPLICATIONS • COLOR TV TYPE • DIFFUSION BONDED CATHODE • LOW TUBE DROP • 5000 VOLTS DC • 350 MILLIAMPERES DC The 6CJ3 is a single heater-cathode type diode intended for service as the damping diode

JAN 1N4500

Abstract: 1N4500
Contextual Info: COMPUTER DIODE JAN & JANTX 1N4500 500m A Switching Diode FEATU RES D ESCR IPTIO N • • • • • This device is a fast sw itching, high con­ ductance diode for military, space, high rel and other systems. M etallurgical Bond Qualified to MIL-S-19500/403

6CG3

Abstract: 6CG3 tube E12-70 general electric
Contextual Info: — PRODUCT INFORMATION — Page 1 6CG3 Compactron Diode TUBES • COLOR TV TYPE FOR TV DAMPING DIODE APPLICATIONS • LOW TUBE DROP • 5000 VOLTS DC • DIFFUSION BONDED CATHODE • 350 MILLIAMPERES DC The 6CG3 is a compactron containing a single heater-cathode type diode. It is intended

JAN 1N4500

Contextual Info: COMPUTER DIODE 1N4500, JAN & JANTX 1N4500 500mA Switching Diode FEATURES DESCRIPTION • • • • T h is d evice ¡s a fast sw itching, high co n ­ d u cta n ce diode for m ilitary, space, high rel and other systems. Metallurgical Bond Qualified to MIL-S-19500/403

19de3

Abstract: E12-70 Scans-0017327 general electric K-55611-TD298-1A
Contextual Info: — PRODUCT INFORMATION — Page 1 Compactron Diode wees FOR TV DAMPING DIODE APPLICATIONS COLOR TV TYPE • DIFFUSION BONDED CATHODE • 350 MILLIAMPERES DC • LOW TUBE DROP 5000 VOLTS DC The 19DE3 is a compactron containing a s in g le heater-cathode type diode. It is intended for service as

HSCH-9161

Abstract: HSMS-2850 United Detector silicon diode
Contextual Info: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through

TD-101

Abstract: TD101 12FX 6bw3 E12-70 R-5561 general electric r5561
Contextual Info: — PRODUCT INFORMATION — Page 1 6BW3 Compactron Diode TUBES • COLOR TV TYPE FOR TV DAMPING DIODE APPLICATIONS ■ DIFFUSION BONDED CATHODE ■ 5000 VOLTS DC ■ 175 MILLIAMPERES DC The 6BW 3 is a compactron containing a s in g le heater-cathode type diode. It is intended for s e rvice as the

E12-70

Abstract: 34ce3 Scans-0017402 general electric
Contextual Info: — PRODUCT INFORMATION — 34CE3 Compactron Diode TUBES • COLOR TV TYPE Page 1 FOR TV DAMPING DIODE APPLICATIONS ■ LOW TUBE DROP ■ 5000 VOLTS DC ■ DIFFUSION BONDED CATHODE ■ 350 MILLIAMPERES DC The 34CE3 is a compactron containing a sin g le heater-cathode type diode. It is intended for se rvice as the

Contextual Info: WT-Z108N-4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N-4 2. Structure: 2-1 Planar type: Silicon Diode

6BE3

Abstract: E12-70 E1270 general electric
Contextual Info: E L E C T R O N IC — PRODUCT INFORMATION — IX A t m iìN 6BE3 Compactron Diode TUBES • COLOR TV TYPE Page 1 FOR TV DAMPING DIODE APPLICATIONS • DIFFUSION BONDED CATHODE • 5000 VOLTS DC • 250 MILUAMPERES DC The 6BE3 is a compactron, single heater-cathode type diode intended for service as the

z106

Abstract: DIODE ZENER X
Contextual Info: WT-Z106P-4-14 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-4-14 2. Structure: 2-1 Planar type: Silicon Diode

3.2 v zener diode

Abstract: 105um DIODE ZENER X
Contextual Info: WT-Z106P-4-12 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-4-12 2. Structure: 2-1 Planar type: Silicon Diode

PIN Diode chip

Contextual Info: Attenuator PIN Diode Chip ML47406-S-132 ML47406-S-132 Preliminary Specifications High Reliability Semiconductor Attenuator PIN Diode Chip Features • • • • • Package Outline Glass Passivation Thermocompression bondable Thermosonically bondable Gold metallisation

std883

Abstract: Zener diode DIODE ZENER X
Contextual Info: WT-Z106N-AU4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z106N-AU4 2. Structure: 2-1 Planar type: N/P Diode

2KV DIODE

Contextual Info: 2T2K 2KV Diode, Axial Leaded Standard Recovery Rectifier Diode POWER DISCRETES Description - PRELIMINARY Features Quick reference data Low reverse leakage current Hermetically sealed. Good thermal shock resistance Low forward voltage drop Metallurgically bonded, CAT 1 bond.

integrated circuits equivalents list

Abstract: digital phase shifters HPND-0002 hydrofluoric acid HPND0002 HSMP3810 5965-9143E eutectic
Contextual Info: HPND-0002 Small Signal RF PIN Diode Chips for Hybrid Integrated Circuits Data Sheet Description Features These PIN/NIP diode chips are specifically designed for hybrid applications requiring thermosonic or thermocompression bonding techniques. The top metallization

hydrofluoric acid

Abstract: thermocompression HPND0001 HPND-0001 HPND-0002
Contextual Info: Small Signal RF PIN Diode Chips for Hybrid Integrated Circuits Technical Data HPND-0001 HPND-0002 Features Description • Thermocompression/ Thermosonically Bondable These PIN/NIP diode chips are specifically designed for hybrid applications requiring thermosonic or thermocompression

hp 3080 diode

Contextual Info: Small Signal RF PIN Diode Chips for Hybrid Integrated Circuits Technical Data HPND-0001 HPND-0002 Features Description • Thermocompression/ Thermosonically Bondable These PIN/NIP diode chips are specifically designed for hybrid applications requiring thermosonic or thermocompression

H31D

Abstract: plastic film incoming procedure silicon carbide Germanium mesa
Contextual Info: APPLICATION NOTE Diode Chips, Beam-Lead Diodes, Capacitors: Bonding Methods and Packaging Diode Chips Inert Atmosphere Handling Skyworks chips are shipped in plastic chip trays containing up to 400 individual devices. The chips may be removed from the tray

1n456

Abstract: 25nA 1N458 1N457
Contextual Info: DIODE 1N456 1N457; JAN 1N457 1N458; JAN 1N458 1N459; JAN 1N459 Low Current FEATURES • Metallurgical Bond • Qualified to MIL-S-1950W193 • Planar Passivated Chip • DO-7 Package DESCRIPTION General purpose low current diode with high reliability characteristics

MA4BPS101

Abstract: MA4BPS301 PIN diode MACOM SPICE model MA4BPS201 Three bond 09CP
Contextual Info: PIN Diode Chips With Offset Bond Pads MA4BPS101, MA4BPS201, MA4BPS301 MA4BPS101, MA4BPS201, MA4BPS301 PIN Diode Chips with Offset Bond Pads Features • • • • • Chip Layout Bond Pads Removed From Active Junction Large Bond Pads Support Multiple Bond Wires

MADP-007224-01072T

Abstract: MADP-007224-01072
Contextual Info: MADP-007224-01072T Non Magnetic MELF PIN Diode Features Rectangular MELF SMQ Hermetically Sealed Low Loss Low Distortion High Isolation Passivated PIN Diode Chips Full Face Bonds Ultra Low Non-Magnetic Packages Suitable for MRI Applications • High Power Handling Capability

high current schottky diode

Abstract: Schottky diode Die Schottky Diodes diode Schottky Diode Schottky diode wafer CPD98V
Contextual Info: PROCESS CPD98V Central Schottky Diode Semiconductor Corp. Silicon High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 6.3 x 6.3 MILS Top Side Metalization Al - 30,000Å

CMOSH2-4L

Abstract: CMDSH2-4L CPD82X CMDSH2-3
Contextual Info: PROCESS CPD82X Schottky Diode High Current, Low VF Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.6 x 14.6 MILS Die Thickness 5.5 MILS Anode Bonding pad Area 11.8 x 11.8 MILS Top Side Metalization Al - 30,000Å Back Side Metalization