DIODE BAY 18 Search Results

Diode BAY 61

Abstract: BAY 61 n4148 Diode N4148 diode din 4148 diode bay 56A2 din 4148
Contextual Info: B A Y 61 Silico n sw itch in g diode BAY 61 is a silicon diode in a glass case 56A 2 DIN 41883 DO-35 . It is particularly suitable for use as switching diode, having a short reverse recovery time and low capacitance. The diode is similar to type 1 N4148 and identified by colour rings

Diode BAY 46

Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j

60N03

Abstract: 60N035 60N035S Bay Linear 60N035T
Contextual Info: Bay Linear Linear Excellence 60N035 N-Channel Field Effect Transistor Advance Information Description Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications

Diode BAY 55

Abstract: Bay Linear 4N600 4N600S 4N600T 4N6003600 DSA0083437
Contextual Info: Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor Description 4N600 3600 Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications

Diode BAY 19

Abstract: Diode BAY 21 Diode BAY 80 IR 10D DIODE Diode BAY 18 Diode BAY 45 Diode BAY 42 "BAY 21" BAY18 bay 17 diode
Contextual Info: Silicon Diodes Silicon Junction Diodes in DO-7 glass encapsulation fo r general a p p lica tio n s T yp e M a x im u m R a tin g s C h a ra c te ris tic s ia> @ @ @ T = 25 ° C amb = am° T 25 ° C Vp = U = 25 ° C @ 1 V VR = f = 10 V 0,5 M H z Q amb Vr V

Diode BAY 61

Abstract: Diode BAY 55 Diode BAY 80 3AX11 BXY 36 DIODE diode sax 34 bxy26 Diode BAY 68 Diode BAY 23 BAX11
Contextual Info: /licrowave semiconductor diodes and components licrowave PN silicon diodes Type Fig. Nr. GHz ft ns ÄthJC K/W 10.15 33 2 10 33 2 10 3AX 11/10 34 60 3AX11/IU 34 60 o / • Ö6V 00 cj at £/r = 6 V pF CO tf BR V 60 4,7.6,8 47 1 12 34 60 3,3.4,7 47 1 12

Diode BAY 21

Abstract: Diode BAY 18 Diode BAY 32 Diode BAY 19 Diode BAY 12 Diode BAY 45 BAY46 BAW32B BAY18 BAW32D
Contextual Info: general purpose and sw itching diode selector guide guide de sélection diodes de commutation et usage général t h o m s o n -c s f Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 €£043 1N456 25 J 1N 456 A W 449)1 1 rtm a a j

ultra FAST DMOS FET Switches

Abstract: 60659 B3520 B3520K4 B3540 B3540K4-XX CT-3520
Contextual Info: Bay Linear Inspire the Linear Power B3520/B3540 N-CHANNEL DMOS FET SWITCH High Gain Level Shifter Series Description Features The B3520 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency wireless

Contextual Info: Bay Linear Inspire the Linear Power B431 2.5V Adjustable Shunt Regulator Description Features The Bay Linear B431 is a three terminal adjustable shunt regulator with thermal stability over Temperature range. Using two external resistors allows the output voltage to be adjusted

h569-445

Abstract: H569-445 G1 FAJ 38 ED83127-30 ED83127-30 G-D T-83150-30 848258679 BDFB ED83127 G61A
Contextual Info: Secondary DC Power Distribution Bay H569-445 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Secondary DC Power Distribution Bay H569-445 Notice:

Voltage Regulator LM78L09 TO-92 package

Abstract: Diode BAY 46 Data LM78L05 TO92 Diode BAY 46 Diode BAY 96 LM78L15 datasheet lm78l05 Diode BAY 19 LM78L18 15Vto25V
Contextual Info: Bay Linear Inspire the Linear Power LM78LXX 100mA Positive Voltage Regulator Description Features The Bay Linear LM78LXX is integrated linear positive regulator with three terminals. The LM78LXX offer several fixed output voltages making them useful in wide range of

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

DS30-P1241

Abstract: DS30-P2255 DS30-P1253 sick ds60 SICK distance sensor distance sensor p1241 optical N1241 SICK DS30-P2255 distance sensor SICK distance sensor ds60
Contextual Info: Distance Sensor DS30 The Distance Sensor DS30 – High performance The Distance Sensor comprises modern technology in a minimum of space – and is unbeatable value for money. The specification for the DS30 lies exactly between the distance sensor DS60/DS40 and the standard sensors for close-range distance measurement. Its capacity as a low-cost high performer sets new standards.

HVB27WK

Contextual Info: HVB27WK Variable Capacitance Diode for FM tuner REJ03G0093-0100Z Previous: ADE-208-594 Rev.1.00 Sep.18.2003 Features • High capacitance ratio. • Low series resistance. (rS = 0.4 Ω max) • Good linearity of C-V curve. • To be usable at low voltage.

cafs-220

Abstract: Seasonic ss series Seventeam power supply Thermotron ST-251HR SS-235PS teac fd 235hf testo anemometer teac FD 5.25 seasonic
Contextual Info: Thermal Considerations for the Pentium III processor at 550MHz Heatsinks & Airflow in ATX chassis May 1999 Order Number: 245184-001 Thermal Considerations for the Pentium® III processor Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any

ASCOM 48V 150A

Abstract: KS-20472-L1S ASCOM rectifier ED83119 ed83119-30 ED83246-30 KS-22089 KS-20472 h569-429 welding rectifier schematic
Contextual Info: Product Manual H569-429 Select Code 167-792-120 Comcode 107966541 Issue 2 June 1998 Lucent Technologies 600-Ampere, 140-Volt Galaxy Control and Distribution Bay for New and Retrofit 4ESS Applications Notice: Every effort was made to ensure that the information in this

speedometer

Abstract: vehicle Speed Sensor sensor input speedoMETER ODOMETER HIP9020 1N4005 HIP9020AB HIP9020AP diode vo3
Contextual Info: HIP9020 TM Programmable Quad Buffer with Pre and Post Scaler Dividers October 1993 Features Description • Sine Wave Speedometer Input The HIP9020 is a Vehicle Speed Sensor VSS Buffer IC. It receives sinusoidal vehicle speed information from a speedometer signal source. The signal is amplified and

HB Electronic Components

Abstract: HIP2100 HIP2100IB IRFR120 MS-012-AA TB379
Contextual Info: HIP2100 TM Data Sheet July 2001 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver • • • • • • • • • • • • • • Ordering Information HIP2100IB TEMP. RANGE oC PACKAGE -40oC to 85oC 8 Ld SOIC (N) Pinout 4022.3 Features The HIP2100 is a high frequency, 100V Half Bridge

AN9106

Abstract: HS-65647RH BOSSARD
Contextual Info: Special ESD Considerations for the HS-65643RH and HS-65647RH Radiation Hardened SOS SRAMs TM Application Note June 1992 The HS-65643RH and HS-65647RH SRAMs are fabricated on TSOS4, an advanced 1.25mm dual level metal silicon on sapphire process. The sapphire substrate used in this process is an excellent electrical insulator, and allows the

Contextual Info: Application Note 1895 Author: Nick van Vonno Total Dose Testing of the ISL71590SEH Radiation Hardened Temperature Sensor Introduction This interim report documents the results of low and high dose rate total dose testing and subsequent anneals of the ISL71590SEH radiation hardened temperature sensor. The

RJK6015DPK

Abstract: PRSS0004ZE-A RJK6015DPK-00-T0 SC-65
Contextual Info: RJK6015DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1536-0200 Rev.2.00 Apr 18, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A Package name:TO-3P D 1. Gate

PRSS0004ZE-A

Abstract: RJK5015DPK RJK5015DPK-00-T0 SC-65
Contextual Info: RJK5015DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1360-0200 Rev.2.00 Apr 18, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A Package name:TO-3P D 1. Gate

RL0503-5820-97-MS

Abstract: PCS5035 Thermistor 50K ohm RL0503-55.36K-122-MS RL0503-5820-97-MS 10K thermistor 10k ohm thermistor 5k ohm RL0503-1248-73-MS RL0503-2890-95-MS PCS5035-7
Contextual Info: Standard Products PCS5035 Quintet Precision Current Sources Built-In Comparators Radiation Tolerant www.aeroflex.com/power November 17, 2009 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Radiation Performance - Total dose > 100 krad Si , Dose rate = 50 - 300 rads(Si)/s

Contextual Info: Standard Products PCS5035 Quintet Precision Current Sources Built-In Comparators Radiation Tolerant www.aeroflex.com/power August 3, 2011 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Radiation Performance - Total dose > 100 krad Si , Dose rate = 50 - 300 rads(Si)/s