DIODE B3L Search Results

BAV70

Contextual Info: MOTOROLA SC -CDIODES/OPTOJ { Im »F|b3L72S5 6367255 MO TO R O L A SC D I O D E S / O P T O 34C D03ÖS4B h 38243 D T ' 0 2 - of SOT23 (continued) BAV70 DEVICE NO. SMALL-SIGNAL SWITCHING DIODE T0P VIEW r— « I Common cathode dual diode specially designed for high­

Contextual Info: HZU-L Series Silicon Planar Zener Diode for Low Noise Application REJ03G0043-0400 Rev.4.00 Oct.29.2007 Features • • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance. Wide spectrum from 5.2 V through 14.3 V of zener voltage provide flexible application.

MARK B3L

Abstract: diode b2l A1L DIODE zener a1 7 HZU11A1L HZU11A2L HZU11A3L HZU11B1L HZU11B2L HZU11B3L
Contextual Info: HZU-L Series Silicon Planar Zener Diode for Low Noise Application REJ03G0043-0400 Rev.4.00 Oct.29.2007 Features • • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance. Wide spectrum from 5.2 V through 14.3 V of zener voltage provide flexible application.

BUT35

Abstract: transistors but35 CM4050
Contextual Info: MOTO RO LA SC XSTRS/R F 12E D | b3L75S4 00840130 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 40 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 2 5 0 WATTS

MV104

Abstract: SILICON DICE motorola
Contextual Info: nOTOROLA SC Ì4 OIODES/OPTO} 6367255 MOTOROLA SC D if | b3Li7ESS D IODES/OPTO 34C 003Û1G4 38104 SILICON TUNING DIODE DICE (continued) D r -ô 7- / ÿ MVC104 DIE NO. LINE SOURCE — DV66 This die provides performance equal to or better than that of the following device types:

in5333

Abstract: IN5388 DZU 41 IN5333 motorola in538 1C5366 1C3016
Contextual Info: MOTOROLA f SC -CDIODES/OPTO} 6367255 MOTOROLA S C 34 D E^j b3Lj7E5S 34 c <D I O D E S / O P T O 0030151 38121 7~f/~0'5 SILICON ZENER D50DE DICE continued) 1C3016 CHIP NO. — SERIES LINE SOURCE— DZD900 CURRENT REGULATOR DIODE Device assembled from this chip type are similar to or better

MBS4991 equivalent

Abstract: SBS thyristor motorola thyristor MBS4991 mbs4993 thyristor device data BS4992
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBS4991 MBS4992 MBS4993 Silicon Bidirectional Switches Diode Thyristors . . . designed for full-wave triggering in Triac phase control circuits, half-wave SCR triggering application and as voltage level detectors. Supplied in an inexpensive

diode b3l

Abstract: MPN3401 MPN3403
Contextual Info: MOTOROLA SC -CDIODES/OPTOJ ! 3 14 6 3 6 7 2 5 5 M O T O R O L A SC DE b3L,72SS 003Û103 1 | (DIODES/OPTO 34C 38103 SILICON TUNING DIODE DICE (continued) T -Ô 7 - / * DIE NO. MPNC3401 — s e r ie s LINE SOURCE — DV10 This die provides performance equal to or better than that of

Contextual Info: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with

schottky b37 diode

Contextual Info: MOTOROLA Order th is docum ent by MBRF2060CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifier MBRF2060CT The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features

Contextual Info: MOTOROLA Order this document by MBRF2545CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE S chottky Pow er R ectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-sllicon power diode. S tate-of-the-art geometry features

B140

Abstract: CD216A-B120L CD216A-B120R CD216A-B130L CD216A-B140 code diode b2l
Contextual Info: PL IA NT CO M *R oH S Features • ■ ■ ■ Applications RoHS compliant* Low profile Surface mount Very low forward voltage drop ■ ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players CD216A-B120L ~ B140 MITE Chip Diode

GE SC 140 d

Abstract: diode b3l motorola bridge rectifier mda RS 206G
Contextual Info: 89D M OTOROLA SC -CDIODES/OPTO} 77439 ~ - X 3 DE I b3L,72S5 0D77M3T 1 "|~ MOTOROLA - 0 5 O rder th is data sheet b y M D A 2 0 0 G /D • i S E M IC O N D U C T O R TECHNICAL DATA M DA200G THRU MDA206G Integral G la ss Passivated Diode A sse m b lie s . diffused glass passivated silicon dice interconnected and molded into rectifier circuit

smd diode B140

Abstract: smd b140 diode b3l JEDEC DO-216aa code diode b2e DO216AA
Contextual Info: T PL IA N M CO *R oH S Features Applications • RoHS compliant* ■ Cellular phones ■ Low profile ■ PDAs ■ Surface mount ■ Desktop PCs and notebooks ■ Very low forward voltage drop ■ Digital cameras ■ MP3 players CD216A-B120L~B140 MITE Chip Diode

CD216A-B120L

Abstract: B140 CD216A-B120R CD216A-B130L CD216A-B140 code diode b2l diode b140
Contextual Info: PL IA NT CO M *R oH S Features • ■ ■ ■ ■ Applications Lead free RoHS compliant* Low profile Surface mount Very low forward voltage drop ■ ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players CD216A-B120L ~ B140 MITE Chip Diode

diode b2l

Abstract: code diode b2l diode b3l 050 B3L DO216-AA DO216AA
Contextual Info: NT IA PL M • *R oH S CO Features ■ ■ ■ ■ Applications Lead free RoHS compliant* Low profile Surface mount Very low forward voltage drop ■ ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players CD216A-B120L ~ B140 MITE Chip Diode

code diode b2l

Abstract: B2L DIODE DO216AA B140 CD216A-B120L CD216A-B120R CD216A-B130L CD216A-B140
Contextual Info: PL IA NT CO M *R oH S Features • ■ ■ ■ ■ Applications Lead free RoHS compliant* Low profile Surface mount Very low forward voltage drop ■ ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players CD216A-B120L ~ B140 MITE Chip Diode

diode b140

Abstract: diode b2l code diode b2l B2L DIODE b4s 050 B140 CD216A-B120L CD216A-B120R CD216A-B130L CD216A-B140
Contextual Info: Features • ■ ■ Applications Low profile Surface mount Very low forward voltage drop ■ ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players CD216A-B120L ~ B140 MITE Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly

BUT35

Abstract: THT bsc 25 transistors but35 ASX 12 D transistor CM4050
Contextual Info: MO T O R O L A SC XST RS /R 12E D I b3b75S4 DDaMflbfl T | F MOTOROLA SEM ICON DUCTOR TECHNICAL DATA 40 AMPERES NPN SILICON POW ER DARLINGTON TRAN SISTO RS SW ITCHM ODE SER IES NPN SILICON POW ER DARLINGTON TRAN SISTO RS WITH BASE-EM ITTER SPEEDU P DIODE 1000 VOLTS

A4008

Abstract: ierc heatsink A4006 in 4008 diode MDA4008 DA4004 diode b3l MDA4006
Contextual Info: M O T O R O L A SC -CDIODES/OPTOÏ ISE D I b3L.7ES5 □ □ 7 cítJñT 1 | r - 3 . 3 -0*7 MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA M DA4002 M D A4004 M D A4006 M D A4008 R ectifier A s s e m b ly . utilizing individual void-free molded rectifiers, interconnected and mounted on an

Contextual Info: 6 3 6 7 2 54 MOTOROLA SC 96D 8 1 4 7 5 CXSTRS/R F — Tb M OTOROLA DE|b3Li7554 D D0S147S fl Order this data sheet b y MJ25BX100/D | S E M IC O N D U C T O R TECHNICAL DATA M J25BX100 NPN Silicon Power Transistor Module Energy M an age m e n t Series DUAL

TRIMMER capacitor 160 pF

Abstract: transistor BC337 TRIMMER capacitor 10-40 pf 22 pf trimmer capacitor 1n4007 mttf linear amplifier 470-860 Zener diode 9.1 470-860 mhz Power amplifier 5 w capacitor c3b TPV5055B
Contextual Info: MOTOROLA SC XSTRS/R F b3L7254 O I D Q W fc^E J> 037 HOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F Lin ear P o w er TVansistor . . . d e sig n e d fo r o u tp u t sta g e s in B and IV & V T V tra n sm itte r am plifiers. Internal m a tc h in g o f b o th in p u t a nd o u tp u t a lo n g w ith u se o f a p u s h -p u ll p a c k a g e

369A-10

Abstract: AN569 MTD1N40 MTD1N40-1 TO-252 N-channel power MOSFET
Contextual Info: MOTOROLA SC XSTRS/R F bf l E » • b3L72S4 00=10403 102 MOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate DPAK for Surface M ount or Insertion M ount TM O S POWER FET

mj100bk100

Abstract: transistor su 110
Contextual Info: MOTOROLA SC Í X S T R S / R flO F> D E I b3L,7554 007bfl72 H | O rd er th is data sh e et by MJ100BK100/D MOTOROLA E 3 S E M IC O N D U C T O R TECHNICAL DATA ' 6367254 M OTO RO LA SC <X S T R S / R_F _ 80C 76872 NPN Silicon Power Transistor Module D ' 7 -