DIODE B32 01 Search Results

Contextual Info: ERB32 1.2A ( 100 to 200V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability B32 02 Abridged type name Voltage class Applications

diode b32

Abstract: ERB32 marking B32 diode
Contextual Info: ERB32 1.2A ( 100 to 200V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability B32 02 Abridged type name Voltage class Applications

B3202

Abstract: diode b32 ERB32 marking code 12A DIODE b32 01 Diode marking code b32
Contextual Info: ERB32 1.2A ( 100 to 200V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability B32 02 Abridged type name Voltage class Applications

U30100

Abstract: B3202 diode b32 ERB32 b32 diode Diode marking code b32 DIODE b32 01
Contextual Info: ERB32 1.2A ( 100 to 200V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability B32 02 Abridged type name Voltage class Applications

T0254AA

Contextual Info: 013^13^ 0 0 0 2 ^ 5 7Tb SflE D SEMTECH CORP POWER MOSFET IN HERMETIC ISOLATED T0254AA PACKAGE SM2F151* SM2F351* SM2F251* SM2F451* These devices offer the latest ruggedized M O SFET transistor die mounted in isolated and hermetically sealed metal packages. The standard M O SFET characteristics of very low

Contextual Info: INTERNATIONAL RECTIFIER bSE » • MÖ55452 GG17DS2 7Tb * I N R PD-2.292 International [t o r JR e c t i f i e r is m q o 1.5 Amp Major Ratings and Characteristics Description/Features Characteristics The 15MQ040 is a 1,5A Schottky rectifier and is designed to

diode B61

Abstract: b84 diode SO56-2 diode b81 diode b84 b71 DIODE b81 diode B7414 DIODE B82 diode b83
Contextual Info: FAST CMOS ADDRESS/ CLOCK DRIVER IDT54/74FCT162344AT/CT/ET Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • The FCT162344AT/CT/ET is a 1:4 address line driver built using advanced dual metal CMOS technology. This highspeed, low power device provides the ability to fanout to

diode b81

Abstract: diode B61 diode b84 DIODE B82 b84 diode DIODE B34 diode b73 SO56-2
Contextual Info: FAST CMOS ADDRESS/ CLOCK DRIVER IDT54/74FCT162344AT/CT/ET Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • The FCT162344AT/CT/ET is a 1:4 address line driver built using advanced dual metal CMOS technology. This highspeed, low power device provides the ability to fanout to

DIODE B82

Abstract: DIODE B34 DIODE B44 B14 DIODE b34 diode SO56-2 diode b83 B82 diode diode b81
Contextual Info: FAST CMOS ADDRESS/ CLOCK DRIVER IDT54/74FCT162344AT/CT/ET Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • The FCT162344AT/CT/ET is a 1:4 address line driver built using advanced dual metal CMOS technology. This highspeed, low power device provides the ability to fanout to

BUK482-100A

Abstract: transistor 431 N FR4 epoxy
Contextual Info: N AUER P H I L I P S / D I S C R E T E b'lE » • bbSB'IBl 0030733 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

Contextual Info: International [bk]Rectifier PD-9.1352 IRF530NS PRELIMINARY H E X F E # Power MOSFET • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V 'DS on = 0.11Q

marking B32 diode SCHOTTKY

Abstract: marking B34 diode SCHOTTKY MBRS340T3G b34 diodes on semiconductor marking B33 diode b34 DIODE schottky marking B3X Diode 145 B34 marking B32
Contextual Info: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

capacitor 100nf monoblock

Abstract: pdp data driver pdp driver A52A2 STV7699 DIODE A34 CM17699 OUT48 AN 17380 IL-FHR-50S-HF
Contextual Info: CM17699 COLOR PDP DRIVER MODULE PRODUCT PREVIEW CM17699 MAIN FEATURES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 CM17699 CONNECTORS DEFINITION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Contextual Info: « PD - 9.1378A International IOR Rectifier IRLI2203N PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated

C2241

Abstract: HFM1010 7C127 c2431
Contextual Info: MODULES SSE » " 4S51fi3D D015b2R HO N E Y W E L L b32 « H O N l H O Iie V W e ll INC/ MICRO TRA N SM ITTER - r - Yt - 91 The H F M 20 10 and H F M 2 0 2 5 transmitter modules are designed to provide a tri-level 50% duty cycle optical output. With data formats compatible with M anchester encoded as well as N R Z. The H F M 20 10 , H F M 20 25 and H F M 21 10 allow the user to

DIODE C06-15

Abstract: DIODE C06 15 DIODE C06-13
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS300R17KE3 EconoPACK + Modul mit Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™+ module with trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter

ON B34

Abstract: DIODE B82 DIODE B34 diode b84 max 3249 DIODE B44 74FCT163344 b84 diode DATASHEET B34 DIODE B23
Contextual Info: 3.3V CMOS ADDRESS/ CLOCK DRIVER IDT54/74FCT163344/A/C ADVANCE INFORMATION Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology • Typical tSK o (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)

DIODE MOTOROLA B34

Abstract: DIODE MOTOROLA B33
Contextual Info: M O T O R O L A SC DIODES/OPTO 3TE D S3 b3b?2SS 0aa30sfl S ESM0T7 Order this data sheet by MBRS320T3/D MOTOROLA C 3 S ilS ¥ ilC 0 i\1 0 y C T O ^ r ; _ TECHNICAL DATA T '0 % - \ S C S u rfa c e ¡¥3 iosit S c S io itk y P o w e r ¡R©ct5fo@rs

MTP30N06el

Abstract: 30N06E 30N06EL
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TP 30N 06E L Logic Level TMOS L2TMOS E-FET™ Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced E-FET is an L^TMOS power MOSFET designed to withstand high energy in the avalanche and commutation

Contextual Info: 2UALITY SEMICONDUCTOR INC bSE D • 74bb003 0001354 ûbT QSFCT16373T, QSFCT162373T Advanced Information Q S 74F C T16373T High Speed CMOS 16-Bit Latches Q Q S 74F C T162373T FEATURES/BENEFITS • 16-bit Function compatible to the 74F373 74FCT373 and 74FCT373T

U820 diode

Abstract: u860 diode U840 diode U815 diode NFM61R30T472 diode U860 diode u880 diode u820 PLD-10 diode U815
Contextual Info: FLEX 10K PCI Prototype Board February 1998, ver. 1 Features Data Sheet • ■ ■ ■ ■ ■ ■ ■ General Description f Functional Description Altera Corporation A-DS-PCIDEMO-01 Peripheral component interconnect PCI standard form factor expansion card

FQFP48

Abstract: SFECS10M7FA00-R0 1P2T SWITCH 06035A101FAT2A 4468 8 pin SOIC DB9 omron MAX3232 smd data sheet Omron MCU W934 MSP430
Contextual Info: TRF6903 With MSP430 Demonstration and Development Evaluation Kit User’s Guide 2004 Mixed Signal RF SWRU008 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

Contextual Info: 11dt U n te g ia ted D FAST CMOS ADDRESS/ CLOCK DRIVER IDT54/74FCT162344AT/CT/ET /ize T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • • • • • The FC T162344AT/C T/ET is a 1:4 address line driver built using advanced dual metal CMOS technology. This high­

DIODE MOTOROLA B34

Abstract: DIODE MOTOROLA B33 diode schottky B34 1S91
Contextual Info: Order this data shwrt by MBRS320T3/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBRS320T3 MBRS330T3 MBRS340T3 Su rface M o u n t Sc h o ttk y Pow er Rectifiers . em ploying the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and