DIODE B32 01 Search Results

Contextual Info: ERB32 1.2A ( 100 to 200V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability B32 02 Abridged type name Voltage class Applications

B3202

Abstract: diode b32 ERB32 marking code 12A DIODE b32 01 Diode marking code b32
Contextual Info: ERB32 1.2A ( 100 to 200V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability B32 02 Abridged type name Voltage class Applications

T0254AA

Contextual Info: 013^13^ 0 0 0 2 ^ 5 7Tb SflE D SEMTECH CORP POWER MOSFET IN HERMETIC ISOLATED T0254AA PACKAGE SM2F151* SM2F351* SM2F251* SM2F451* These devices offer the latest ruggedized M O SFET transistor die mounted in isolated and hermetically sealed metal packages. The standard M O SFET characteristics of very low

Contextual Info: INTERNATIONAL RECTIFIER bSE » • MÖ55452 GG17DS2 7Tb * I N R PD-2.292 International [t o r JR e c t i f i e r is m q o 1.5 Amp Major Ratings and Characteristics Description/Features Characteristics The 15MQ040 is a 1,5A Schottky rectifier and is designed to

diode B61

Abstract: b84 diode SO56-2 diode b81 diode b84 b71 DIODE b81 diode B7414 DIODE B82 diode b83
Contextual Info: FAST CMOS ADDRESS/ CLOCK DRIVER IDT54/74FCT162344AT/CT/ET Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • The FCT162344AT/CT/ET is a 1:4 address line driver built using advanced dual metal CMOS technology. This highspeed, low power device provides the ability to fanout to

diode b81

Abstract: diode B61 diode b84 DIODE B82 b84 diode DIODE B34 diode b73 SO56-2
Contextual Info: FAST CMOS ADDRESS/ CLOCK DRIVER IDT54/74FCT162344AT/CT/ET Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • The FCT162344AT/CT/ET is a 1:4 address line driver built using advanced dual metal CMOS technology. This highspeed, low power device provides the ability to fanout to

Contextual Info: International [bk]Rectifier PD-9.1352 IRF530NS PRELIMINARY H E X F E # Power MOSFET • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V 'DS on = 0.11Q

marking B32 diode SCHOTTKY

Abstract: marking B34 diode SCHOTTKY MBRS340T3G b34 diodes on semiconductor marking B33 diode b34 DIODE schottky marking B3X Diode 145 B34 marking B32
Contextual Info: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

capacitor 100nf monoblock

Abstract: pdp data driver pdp driver A52A2 STV7699 DIODE A34 CM17699 OUT48 AN 17380 IL-FHR-50S-HF
Contextual Info: CM17699 COLOR PDP DRIVER MODULE PRODUCT PREVIEW CM17699 MAIN FEATURES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 CM17699 CONNECTORS DEFINITION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Contextual Info: « PD - 9.1378A International IOR Rectifier IRLI2203N PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated

Contextual Info: 2UALITY SEMICONDUCTOR INC bSE D • 74bb003 0001354 ûbT QSFCT16373T, QSFCT162373T Advanced Information Q S 74F C T16373T High Speed CMOS 16-Bit Latches Q Q S 74F C T162373T FEATURES/BENEFITS • 16-bit Function compatible to the 74F373 74FCT373 and 74FCT373T

U820 diode

Abstract: u860 diode U840 diode U815 diode NFM61R30T472 diode U860 diode u880 diode u820 PLD-10 diode U815
Contextual Info: FLEX 10K PCI Prototype Board February 1998, ver. 1 Features Data Sheet • ■ ■ ■ ■ ■ ■ ■ General Description f Functional Description Altera Corporation A-DS-PCIDEMO-01 Peripheral component interconnect PCI standard form factor expansion card

Contextual Info: 11dt U n te g ia ted D FAST CMOS ADDRESS/ CLOCK DRIVER IDT54/74FCT162344AT/CT/ET /ize T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • • • • • The FC T162344AT/C T/ET is a 1:4 address line driver built using advanced dual metal CMOS technology. This high­

marking code onsemi Diode B34

Abstract: b34 DIODE schottky SMC 403-03 MBRS340T3 b34 diode diode marking b34 marking B34 diode SCHOTTKY DIODE ON SEMICONDUCTOR B34 DIODE B34 diode schottky B34
Contextual Info: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

TP-105-01-02

Abstract: s467a MAX3232so TP-105-01-05 SAFC915MA70N-TC11 OMRON C20 W934IT TP-105-01-09 brc16 TP-105-01
Contextual Info: Chapter 1 TRF6903 Demonstration and Evaluation Kit Overview This chapter provides an overview of the TRF6903 demonstration and development kit. Topic Page 1.1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-2

DIODE ON SEMICONDUCTOR B34

Abstract: NCP1200 CROSS REFERENCE transformer bobbin sectional bobbin LLC N67 transformer core mosfet b38 EE 80 bobbin EI TRANSFORMER LIST EI type bobbin EE CORE
Contextual Info: EBNCP1200/D How to Use the Spreadsheet NCP1200 Discont.xls" By Hector NG ON Semiconductor Singapore Application Engineer Email: hector.ng@onsemi.com http://onsemi.com ENGINEERING BULLETIN This short note describes the necessary steps to efficiently use the NCP1200 design aid file: “NCP1200 Discont.xls”.

Contextual Info: FAST C MOS A D D R E S S / CL OC K DRI VER FEATURES: IDT54/74FCT1 62344AT/CT/ET DESCRIPTION: • 0 .5 M IC R O N C M O S T e c h n o lo g y T h e F C T 1 6 2 3 4 4 A T /C T /E T is a 1 :4 a d d re s s line d river built • Ideal to r a d d re s s line driving an d clock distribution

B26 ZENER DIODE

Abstract: zener Diode B23 zener Diode B19 B23 ZENER DIODE ZENER b29 b17 zener diode Zener diode marking code b25 B32 ZENER DIODE B37 zener diode marking code b23
Contextual Info: MCC TM Micro Commercial Components Features BZD27C6V2P THRU BZD27C200P
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# • • • High Surge Capability Low profile surface-mount package. Zener and TVS specification.

74ABT16373CSSC

Abstract: 74ABT 74ABT16373 74ABT16373CMTD ABT16373 ABT373 C1995 MS48A MTD48
Contextual Info: 74ABT16373 16-Bit Transparent Latch with TRI-STATE Outputs General Description Features The ABT16373 contains sixteen non-inverting latches with TRI-STATE outputs and is intended for bus oriented applications The device is byte controlled The flip-flops appear

DS1231

Abstract: DS1231S
Contextual Info: D S1231/S DS1231/S Power Monitor Chip DALLAS SEMICONDUCTOR PIN ASSIGNMENT FEATURES • Warns processor of an impending power failure in [^ • Provides time for an orderly shutdown 1 m odeC 2 • Prevents processor from destroying nonvolatile memory during power transients

Schottky Diode 40V 2A

Abstract: NEC schottky diode product List CRG16GT TEMSVB21c106m8r Schottky Diode B29 capacitor 0.2uf 50v GRM39F103Z50PT TEMSVB21 RK73K1JTD 1a4 capacitor
Contextual Info: µ PD72872 Reference Design Document Number: SSG-Z-140 • The information in this document is current as of December, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or

RF2501

Abstract: SMV1104-34 SMV1104-35 TO58
Contextual Info: RF1 RF2501 M IC R O -D E V T C F S VCO/HIGH-ISOLATION B U FFER AMPLIFIER Typical Applications • 2-way Paging GPS Receivers • ISM Band Systems Cellular Systems • Wireless Local Loop Systems Wireless Modems Product Description The RF2501 is an integrated oscillator and buffer ampli­

SIEMENS S89

Abstract: s187 s89 S187 Siemens S187 kf161 S187 synthesizer Siemens S187 TBA120S schema s187 S89 Siemens
Contextual Info: KF161 DIG-X Synthesizersturing Simpele ombouw in een avond door PE1RRT 1 Inleiding: Cor Moerman, PA0VYL, -u weetwel, de oprichter van ons museum “Jan Corver” te Budelbenaderde mij met de vraag of ik eens kon kijken of het mogelijk is om een simpele ombouw

MAX 3249

Abstract: SO56-2
Contextual Info: 3.3V CMOS ADDRESS/ CLOCK DRIVER IDT74FCT163344/A/C ADVANCE INFORMATION Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology • Typical tSK o (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)